Works matching IS 02682605 AND DT 1998 AND VI 12 AND IP 3

Results: 8

Chemical vapor deposition of tungsten oxide.

Published in:

Applied Organometallic Chemistry, 1998, v. 12, n. 3, p. 155, doi. 10.1002/(SICI)1099-0739(199803)12:3<155::AID-AOC688>3.0.CO;2-Z

By:

Kirss, Rein U.;
Meda, Lamartine

Publication type:

Article

Low-temperature MOCVD of chromium carbonitride coatings from tetrakis(diethylamido)chromium and pyrolysis mechanism of this single-source precursor.

Published in:

Applied Organometallic Chemistry, 1998, v. 12, n. 3, p. 189, doi. 10.1002/(SICI)1099-0739(199803)12:3<189::AID-AOC691>3.0.CO;2-3

By:

Maury, Francis;
Ossola, Franco

Publication type:

Article

MOCVD of rhodium, palladium and platinum complexes on fluidized divided substrates: Novel process for one-step preparation of noble-metal catalysts.

Published in:

Applied Organometallic Chemistry, 1998, v. 12, n. 3, p. 161, doi. 10.1002/(SICI)1099-0739(199803)12:3<161::AID-AOC689>3.0.CO;2-6

By:

Hierso, Jean-Cyrille;
Serp, Philippe;
Feurer, Roselyne;
Kalck, Philippe

Publication type:

Article

Processing and properties of (Mo,Cr) oxycarbides from MOCVD.

Published in:

Applied Organometallic Chemistry, 1998, v. 12, n. 3, p. 201, doi. 10.1002/(SICI)1099-0739(199803)12:3<201::AID-AOC692>3.0.CO;2-T

By:

Wei, Wen-Cheng J.;
Lo, Ming-Hung

Publication type:

Article

Preface.

Published in:

Applied Organometallic Chemistry, 1998, v. 12, n. 3, p. 145, doi. 10.1002/(SICI)1099-0739(199803)12:3<145::AID-AOC1687>3.0.CO;2-F

By:

Laine, R. M.

Publication type:

Article

Evaluation of the simultaneous use of Cp2VMe2 and CpTiCl2N(SiMe3)2 as precursors to ceramic thin films containing titanium and vanadium: Towards titanium-vanadium carbonitride.

Published in:

Applied Organometallic Chemistry, 1998, v. 12, n. 3, p. 173, doi. 10.1002/(SICI)1099-0739(199803)12:3<173::AID-AOC690>3.0.CO;2-P

By:

Valade, L.;
Danjoy, C.;
Chansou, B.;
Rivière, E.;
Pellegatta, J.-L.;
Choukroun, R.;
Cassoux, P.

Publication type:

Article

Comparison of SnBr4 and di-n-butyl tin diacetate as laser-assisted chemical vapor deposition precursors for SnO2-based gas sensors.

Published in:

Applied Organometallic Chemistry, 1998, v. 12, n. 3, p. 147, doi. 10.1002/(SICI)1099-0739(199803)12:3<147::AID-AOC687>3.0.CO;2-X

By:

Hossenlopp, Jeanne M.;
Lamelas, F. J.;
Middleton, Kenneth;
Rzepiela, Jeffrey A.;
Schmidt, Jason D.;
Zivkovic, Aleksandar

Publication type:

Article

Trends in precursor design for conventional and aerosol-assisted CVD of high- Tc superconductors.

Published in:

Applied Organometallic Chemistry, 1998, v. 12, n. 3, p. 221, doi. 10.1002/(SICI)1099-0739(199803)12:3<221::AID-AOC693>3.0.CO;2-O

By:

Hubert-Pfalzgraf, Liliane G.;
Guillon, Hervé

Publication type:

Article

Works matching IS 02682605 AND DT 1998 AND VI 12 AND IP 3

Chemical vapor deposition of tungsten oxide.

Low-temperature MOCVD of chromium carbonitride coatings from tetrakis(diethylamido)chromium and pyrolysis mechanism of this single-source precursor.

MOCVD of rhodium, palladium and platinum complexes on fluidized divided substrates: Novel process for one-step preparation of noble-metal catalysts.

Processing and properties of (Mo,Cr) oxycarbides from MOCVD.

Preface.

Evaluation of the simultaneous use of Cp<sub>2</sub>VMe<sub>2</sub> and CpTiCl<sub>2</sub>N(SiMe<sub>3</sub>)<sub>2</sub> as precursors to ceramic thin films containing titanium and vanadium: Towards titanium-vanadium carbonitride.

Comparison of SnBr<sub>4</sub> and di-n-butyl tin diacetate as laser-assisted chemical vapor deposition precursors for SnO<sub>2</sub>-based gas sensors.

Trends in precursor design for conventional and aerosol-assisted CVD of high- T<sub>c</sub> superconductors.