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Personal Reflections: Cryst. Res. Technol. 78/2003.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 533
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An emulation system for melting zone semiconductor single crystal growth in space.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 734
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In situ study of the kinetics of displacement of growth steps on {010} faces of potassium acid phthalate single crystals grown from aqueous solutions.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 684
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Melt-crucible wetting behavior in semiconductor melt growth systems.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 669
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Investigation of additional convective transports in liquid metals and semiconductors during diffusion measurements by means of the shear cell technique.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 707
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Noise thermometry in crystal growth facilities for the International Space Station (ISS).
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 697
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Numerical modeling of crystal growth and solidification experiments carried out under microgravity conditions.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 726
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Diffusion effects at the Au/p-CuInSe<sub>2</sub> contact studied by XPS.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 676
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Numerical study of the effects of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 716
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Czochralski growth of doped germanium with an applied rotating magnetic field.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 659
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Beam induced lateral epitaxy: a new approach for lateral growth in molecular beam epitaxy.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 614
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Influence of high frequency vibrations on fluid flow and heat transfer in a floating zone.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 635
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Influence of liquid bridge volume on the floating zone convection.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 627
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Effect of oxygen partial pressure on silicon single crystal growth by floating zone technique: surface oxidation and Marangoni flow.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 619
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<sup>29</sup>Si and <sup>30</sup>Si single crystal growth by mini-Czochralski technique.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 654
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Macrosegregation in the growth of doped III-V-semiconductors from the solution.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 604
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Solidvapor equilibrium in quasi-binary CdTeZnTe.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 598
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Growth of high resistivity CdTe and (Cd,Zn)Te crystals.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 588
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Garnet layers prepared by liquid phase epitaxy for microwave and magneto-optical applications a review.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 575
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Review: Nucleation in solutions revisited.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 555
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Preface: Cryst. Res. Technol. 78/2003.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 531
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Non-stoichiometry related defects at the melt growth of semiconductor compound crystals a review.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 542
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In situ observation experiment for semiconductor solution growth under reduced convection condition a review.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 535
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