Works matching IS 02179849 AND DT 2001 AND VI 15 AND IP 17/18/19
Results: 57
Space Photovoltaics – History, Progress and Promise.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 561, doi. 10.1142/S0217984901002038
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Crystalline Silicon Based Photovoltaics: Technology and Market Trends.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 571, doi. 10.1142/S021798490100204X
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Atomic Layer Epitaxy by Isothermal Closed Space Sublimation.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 579, doi. 10.1142/S0217984901002051
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Hydrogen Co-Doping in III-V Semiconductors: Dopant Passivation and Carbon Reactivation Kinetics in C-GaAs.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 585, doi. 10.1142/S0217984901002063
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Application of III-V Materials in Space Solar Cell Engineering.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 593, doi. 10.1142/S0217984901002075
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CdTe and Si Solar Cell Performance Comparison in a New System for Solar Energy Conversion and Storage.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 597, doi. 10.1142/S0217984901002087
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Improving n[sup +]pp[sup +] Single Crystalline Silicon Solar Cells by Long High Temperature Al Annealing.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 601, doi. 10.1142/S0217984901002099
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Chemical Bath Deposition: A Promising Technology to Build Low Cost Solar Cells.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 605
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Formation of Conductive CdO Thin Films on Photoconductive CdS Thin Films for Window Layer Applications in Solar Cells.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 609, doi. 10.1142/S0217984901002117
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Interferometric Measurementes of Photothermal Deflection.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 613, doi. 10.1142/S0217984901002129
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Study of Passivated Films of GaSb.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 617, doi. 10.1142/S0217984901002130
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Poole-Frenkel Electrical Conduction in Silicon Oxynitride Deposited by Low Pressure Chemical Vapour Deposition.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 621, doi. 10.1142/S0217984901002142
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Study of the Optical Absorption of Cu Clusters in the Cu/ZnO System.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 625, doi. 10.1142/S0217984901002154
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CdSe Characterization by Energy Dispersive Spectroscopy and the Photoconductivity Technique.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 630, doi. 10.1142/S0217984901002166
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Chemical Composition and Crystalline Phases in F-Doped Tin Oxide Films Grown by DC Reactive Sputtering.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 634, doi. 10.1142/S0217984901002178
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Figures of Merit for Niobium Thin Films Grown on Sapphire Substrate.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 634, doi. 10.1142/S021798490100218X
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Composition Mixture Probabilistic Model in the Formation of Semiconductor Materials Obtained by Random Growth Techniques.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 643, doi. 10.1142/S0217984901002191
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Modeling the CVD Growth Kinetics of III-V Compounds.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 647, doi. 10.1142/S0217984901002208
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Ordered Versus Disordered InGaP Layers Grown by Liquid Phase Epitaxy.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 651, doi. 10.1142/S021798490100221X
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A New Combustion Synthesis Technique for Rare Earth-Doped III-Nitride Luminescent Powders.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 655, doi. 10.1142/S0217984901002221
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Influence of the Growth and Post Deposition Process on the Properties of CdS Thin Films Prepared by Chemical Bath Deposition.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 659
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Optical and Morphological Characterization of (ZnO)[sub x](CdO)[sub 1-x] Thin Films.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 663, doi. 10.1142/S0217984901002245
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Cu[sub x]Sb[sub y]S[sub z] Thin Films Produced by Annealing Chemically Deposited Sb[sub 2]S[sub 3]-CuS Thin Films.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 667
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Formation of the Band GAP of CdS Thin Films Growth by Different Techniques.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 671, doi. 10.1142/S0217984901002269
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Preparation and Characterization of Cu/ZnO Nanocomposites.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 675
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Synthesis and Characterization of Au/ZnO Nanocomposites.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 679, doi. 10.1142/S0217984901002282
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45° Reflectometry of Semiconductor Quantum Wells.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 683, doi. 10.1142/S0217984901002294
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About Kinks in AlGaAs Lasers Light-Current Characteristic.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 688
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The Hot Carrier Temperature and the Impurity Band in Kane's Theory for Heavily Doped Semiconductor Photoluminescence Analysis.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 692, doi. 10.1142/S0217984901002312
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The Hot Carrier Temperature in the Analysis of the Free to Acceptor Photoluminescence Transition.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 696, doi. 10.1142/S0217984901002324
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Auger Effect Provoked Red to Green Color Shift in the Luminescence of Highly Excited Ga[sub 1-x]Al[sub x]As:Si.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 700, doi. 10.1142/S0217984901002336
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Luminescence Studies in Thermal Oxide Films with Si Implantation.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 704, doi. 10.1142/S0217984901002348
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Influence of the Lattice Mismatch on the Photoluminescence Band-Tail Parameter in InGaAsP/InP Heterostructures.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 708, doi. 10.1142/S021798490100235X
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Investigation of Self-Organization Processes in Semiconductor Under Photo-Gunn Effect.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 712
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Poly-Silicon Thin Films Prepared by Low Temperature Aluminum-Induced Crystallization.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 716, doi. 10.1142/S0217984901002373
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Improved Two-Terminal Silicon Functional Optical Sensor.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 722, doi. 10.1142/S0217984901002385
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Influence of Firing Temperature on the Properties of CdO Thin Films obtained by the Sol-Gel Method.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 726, doi. 10.1142/S0217984901002397
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Properties of ZnO:Al Thin Films, Obtained by the Sol-Gel Method.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 730, doi. 10.1142/S0217984901002403
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Growth and Characterization of GaAs by Metalorganic Chemical Vapor Deposition Using Triethylgallium and Solid Arsenic.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 733, doi. 10.1142/S0217984901002415
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Optical and Electrical Properties of Thallium Sulphide and Tl[sub x]M[sub y]S[sub z] (M=Cu,Bi,Sb) thin films.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 737, doi. 10.1142/S0217984901002427
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Study of Stoichiometric and Non-Stoichiometric Cadmium Selenide Thin Films.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 741, doi. 10.1142/S0217984901002439
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A Simple Model for Obtaining Optical Constants of Porous Silicon.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 745, doi. 10.1142/S0217984901002440
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Characterization of Doped Sillenites by Electrooptic and Spectral Methods.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 749, doi. 10.1142/S0217984901002452
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Growth and Characterization of GaAsp-n Junctions Obtained by the CSVT Technique using Atomic Hydrogen.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 752, doi. 10.1142/S0217984901002464
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Photoluminescence from Amorphous Silicon Oxide Films Prepared by HFCVD Technique.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 756, doi. 10.1142/S0217984901002476
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Cathodoluminescence and Photoluminescence Characteristics of Ruby.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 760, doi. 10.1142/S0217984901002488
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Blue Photoluminescence in GaAs(N) Nanowhiskers.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 764, doi. 10.1142/S021798490100249X
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Luminescent Properties of Sol-Gel Deposited Eu:TiO[sub 2] Thin Films.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 769, doi. 10.1142/S0217984901002506
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Conductive Copper Sulfide Thin Films on Polyimide Foils for Optical and Optoelectronic Applications.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 774, doi. 10.1142/S0217984901002518
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A New Approach to Ideal AlGaAs MQW Solar Cells.
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- Modern Physics Letters B, 2001, v. 15, n. 17/18/19, p. 778, doi. 10.1142/S021798490100252X
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- Article