Works matching IS 02179792 AND DT 2011 AND VI 25 AND IP 12

Results: 14

COMPOSITES OF THE TITANIA THIN FILMS IMPLANTED BY Ge AND Si.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1629, doi. 10.1142/S021797921110000X

By:

ZHOU, YANJUN;
HE, FANG;
HUANG, YUAN;
WAN, YIZAO;
WANG, YULIN

Publication type:

Article

THEORETICAL PREDICTION OF DEBYE TEMPERATURE FOR MANTLE MINERALS AT HIGH TEMPERATURES.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1593, doi. 10.1142/S0217979211100175

By:

PANDEY, ANJANI K.;
SRIVASTAVA, ABHAY P.

Publication type:

Article

TRANSITION OF SPIRAL WAVE IN A MODEL OF TWO-DIMENSIONAL ARRAYS OF HINDMARSH-ROSE NEURONS.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1653, doi. 10.1142/S0217979211100266

By:

MA, JUN;
JIA, YA;
WANG, CHUN-NI;
JIN, WU-YIN

Publication type:

Article

IMPURITY EFFECT ON THE TRANSITION TEMPERATURE OF THE SUPERCONDUCTING FULLERIDES.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1577, doi. 10.1142/S0217979211058924

By:

HUANG, H.;
GAN, Z.-Z.

Publication type:

Article

EFFECT OF NONLINEAR INTERACTIONS ON PHONON POLARITON MODES IN OPTOELECTRONIC CRYSTALS.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1681, doi. 10.1142/S021797921105895X

By:

WILSON, K. S. JOSEPH;
NAVANEETHAKRISHNAN, K.

Publication type:

Article

INFLUENCE OF THE SUBSTRATE BIAS VOLTAGE ON FRETTING FATIGUE BEHAVIOR OF CrN FILM DEPOSITED ON Ti-6Al-4V ALLOY.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1567, doi. 10.1142/S021797921105864X

By:

RAHMAN, M. S.;
TANIMOTO, S.;
YONEKURA, D.;
MURAKAMI, R.

Publication type:

Article

LUMINESCENCE MECHANISM STUDY OF A POTENTIAL SCINTILLATION CRYSTAL YBa3B9O18.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1637, doi. 10.1142/S0217979211058857

By:

HE, MING;
ZHANG, Z. H.;
CHEN, X. L.;
QIU, M. H.;
JI, Y. K.;
XIU, J. L.

Publication type:

Article

A STUDY OF MICROSTRUCTURE AND TENSILE PROPERTIES OF PROTON BEAM IRRADIATED Al-Mg-Si ALLOY.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1645, doi. 10.1142/S0217979211100333

By:

GHAURI, I. M.;
AFZAL, NAVEED;
IDREES, YASIR

Publication type:

Article

TRANSITION OF BIPOLARON TO POLARONS INDUCED BY MAGNETIC IMPURITIES IN CONJUGATED POLYMERS.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1601, doi. 10.1142/S0217979211100400

By:

LIU, X. J.;
AN, Z.;
XIE, S. J.

Publication type:

Article

ELECTRICAL PROPERTIES OF LiCoVO4 CERAMICS.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1619, doi. 10.1142/S0217979211100540

By:

RAM, MOTI

Publication type:

Article

THE APPLICATION AND CHARACTERISTICS OF THE COHERENT ENTANGLED STATE |β, x〉.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1611, doi. 10.1142/S021797921110062X

By:

ZHANG, YUN-HAI;
XU, XING-LEI;
XU, SHI-MIN;
LI, HONG-QI

Publication type:

Article

NANOINDENTATION SIMULATION ON MECHANICAL BEHAVIOR OF NANOCRYSTALLINE Ni.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1689, doi. 10.1142/S0217979211100692

By:

TANG, QIHENG;
YANG, TIANYONG

Publication type:

Article

THEORETICAL INVESTIGATION OF SYNCHRONOUS TOTALLY ASYMMETRIC SIMPLE EXCLUSION PROCESS WITH DETACHMENT.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1585, doi. 10.1142/S0217979211100710

By:

XIAO, SONG;
CAI, JIU-JU;
LIU, MING-ZHE;
LIU, FEI

Publication type:

Article

ELECTRON TRANSPORT THROUGH A MESOSCOPIC DEVICE WITH THE SPIN-ORBIT COUPLING SEMICONDUCTOR LEADS.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 12, p. 1671, doi. 10.1142/S0217979211100783

By:

CHENG, SHU-GUANG;
ZHAO, XIAO-JUAN;
ZHAO, PEI

Publication type:

Article

Works matching IS 02179792 AND DT 2011 AND VI 25 AND IP 12

COMPOSITES OF THE TITANIA THIN FILMS IMPLANTED BY Ge AND Si.

THEORETICAL PREDICTION OF DEBYE TEMPERATURE FOR MANTLE MINERALS AT HIGH TEMPERATURES.

TRANSITION OF SPIRAL WAVE IN A MODEL OF TWO-DIMENSIONAL ARRAYS OF HINDMARSH-ROSE NEURONS.

IMPURITY EFFECT ON THE TRANSITION TEMPERATURE OF THE SUPERCONDUCTING FULLERIDES.

EFFECT OF NONLINEAR INTERACTIONS ON PHONON POLARITON MODES IN OPTOELECTRONIC CRYSTALS.

INFLUENCE OF THE SUBSTRATE BIAS VOLTAGE ON FRETTING FATIGUE BEHAVIOR OF CrN FILM DEPOSITED ON Ti-6Al-4V ALLOY.

LUMINESCENCE MECHANISM STUDY OF A POTENTIAL SCINTILLATION CRYSTAL YBa<sub>3</sub>B<sub>9</sub>O<sub>18</sub>.

A STUDY OF MICROSTRUCTURE AND TENSILE PROPERTIES OF PROTON BEAM IRRADIATED Al-Mg-Si ALLOY.

TRANSITION OF BIPOLARON TO POLARONS INDUCED BY MAGNETIC IMPURITIES IN CONJUGATED POLYMERS.

ELECTRICAL PROPERTIES OF LiCoVO<sub>4</sub> CERAMICS.

THE APPLICATION AND CHARACTERISTICS OF THE COHERENT ENTANGLED STATE |β, x〉.

NANOINDENTATION SIMULATION ON MECHANICAL BEHAVIOR OF NANOCRYSTALLINE Ni.

THEORETICAL INVESTIGATION OF SYNCHRONOUS TOTALLY ASYMMETRIC SIMPLE EXCLUSION PROCESS WITH DETACHMENT.

ELECTRON TRANSPORT THROUGH A MESOSCOPIC DEVICE WITH THE SPIN-ORBIT COUPLING SEMICONDUCTOR LEADS.