Works matching IS 02179792 AND DT 2002 AND VI 16 AND IP 28/29
Results: 66
PREFACE.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. N.Pag, doi. 10.1142/S0217979202015042
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Organizer and Sponsor.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. N.Pag, doi. 10.1142/S0217979202015728
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- Article
Strained Silicon Germanium Heterostructures for Device Applications.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4189, doi. 10.1142/S0217979202015054
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Antimony Diffusion in Silicon Gemanium Alloys Under Point Defect Injection.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4195, doi. 10.1142/S0217979202015066
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H Distribution and Strain Evolution in SiGe/Si Heterostructure Implanted by H Dimers.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4199, doi. 10.1142/S0217979202015078
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Laser-Induced Selective Crystallization of A-SiGe Film.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4203, doi. 10.1142/S021797920201508X
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C-V and DLTS Characterization of Rapid Thermal Oxides on Si[sub 0.887]Ge[sub 0.113] and Si[sub 0.8811]Ge[sub 0.113]C[sub 0.0059] Alloys.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4207, doi. 10.1142/S0217979202015091
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Temperature Dependence of Photoluminescence of Flat and Undulated SiGe/Si Multiple Quantum Wells.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4211, doi. 10.1142/S0217979202015108
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A Designing of Heterojunction Structure of N-Si/Si[sub 1-x]Ge[sub x] HEMT.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4215, doi. 10.1142/S021797920201511X
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Doping and Growth of Thin Si Epilayer and SiGe by UHV/CVD.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4219, doi. 10.1142/S0217979202015121
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Oxidation Study of RF Sputtered Amorphous and Polycrystalline Silicon Germanium Films.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4224, doi. 10.1142/S0217979202015133
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Type-II SiGe/Si MQWS (Multi-Quantum Wells) and Self-Organized Ge/Si Islands Grown by UHV/CVD System.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4228, doi. 10.1142/S0217979202015145
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Electrical Properties of Si[sub 1-X-Y]Ge[sub X]C[sub Y] Films Grown by Ion Implantation and Solid Phase Epitaxy.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4234, doi. 10.1142/S0217979202015157
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Intense Room-Temperature Photoluminescence from Nanocrystalline Ge/SiO[sub 2] Multilayer Structures.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4238, doi. 10.1142/S0217979202015169
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Effects of Si and Er Concentration on 1.54 μm Photoluminescence from Silica-Based Thin Films.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4242, doi. 10.1142/S0217979202015170
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Correlation Between Er[sup 3+] Emission and the Microstructure of A-SiO[sub x]:H<Er> Films.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4246, doi. 10.1142/S0217979202015182
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Hetero-Growth of (100) Orientated ZnO Films on Silicon by SS-CVD.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4250, doi. 10.1142/S0217979202015194
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Effect of Substrate Temperature on the Properties of Zn[sub 1-x]Mg[sub x]O Films on Silicon.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4255, doi. 10.1142/S0217979202015200
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High Growth-Rate Deposition of μc-Si:H Thin Film at Low Temperature with VHF-PECVD.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4259, doi. 10.1142/S0217979202015212
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X-Ray Diffraction and Raman Studies of RF Sputtered Polycrystalline Silicon Germanium Films.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4263, doi. 10.1142/S0217979202015224
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Formation of GaN Film by Ammoniating Ga[sub 2]O[sub 3] Deposited on Si Substrate with Electrophoresis.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4267, doi. 10.1142/S0217979202015236
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Heteroepitaxial Growth of Novel SOI Material Si/γ-Al[sub 2]O[sub 3]/Si.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4271, doi. 10.1142/S0217979202015248
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Simulation and Fabrication of Thermo-Optic Variable Optical Attenuators Based on Multimode Interference Coupler.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4275, doi. 10.1142/S021797920201525X
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A Computational Design of Si-Based Direct Band-Gap Materials.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4279, doi. 10.1142/S0217979202015261
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Abrupt Boron Profiles by Silicon-MBE.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4285, doi. 10.1142/S0217979202015273
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Study on Electrical Transport Mechanism of Doped nc-Si:H Film.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4289, doi. 10.1142/S0217979202015285
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Systhesis and Optical Properties of Rare Earths Doped Nano-Semiconductors and Their Applications.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4294, doi. 10.1142/S0217979202015297
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Heteroepitaxial Growth and Annealing of γ-Al[sub 2]O[sub 3] Thin Films on Silicon.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4302, doi. 10.1142/S0217979202015303
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Electrophoretic Assembly of Porous Silicon.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4306, doi. 10.1142/S0217979202015315
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An Ultraviolet Photodetector Based on GaN/Si.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4310, doi. 10.1142/S0217979202015327
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Comparison of Donor and Acceptor Levels in Undoped, High Quality β-FeSi[sub 2] Films Grown by MBE and Multi-Layer Method.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4314, doi. 10.1142/S0217979202015339
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ICP Etching and Structure Study of PECVD SiC Films.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4318, doi. 10.1142/S0217979202015340
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Nickel Silicidation on Polycrystalline Silicon Germanium Films.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4323, doi. 10.1142/S0217979202015352
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Study on Optical Band Gap of Boron-Doped nc-Si:H Film.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4327, doi. 10.1142/S0217979202015364
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Formation of Oxygen-Free Gadolinium Silicide Layer by Ion Implantation and Pulsed Excimer Laser Irradiation.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4331, doi. 10.1142/S0217979202015376
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Effect of Reaction Gas on the Structural and Optical Features of nc-Si:H Thin Films Prepared by PECVD.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4335, doi. 10.1142/S0217979202015388
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Characterization of Cubic Boron Nitride Thin Films Deposited by RF Sputter.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4339, doi. 10.1142/S021797920201539X
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Growth and Characterization of C-Oriented LiNbO[sub 3] Thin Films on Si (100) by PLD.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4343, doi. 10.1142/S0217979202015406
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Self-Assembled Ge-Dots for Si Solar Cells.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4347, doi. 10.1142/S0217979202015418
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The Transition to Step Flow Growth on the Clean and Surfactant Covered Si(111) Surface Studied by In-Situ LEEM.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4353, doi. 10.1142/S0217979202015431
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Characterization of Semiconductor Quantum Dots.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4363, doi. 10.1142/S0217979202015443
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In-Situ Diagnosis and Control of Crystal Growth Process by Means of Electric Potentials.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4373, doi. 10.1142/S0217979202015455
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Surface and Structural Characterization of CuInS[sub 2] Thin Films Deposited by One-Stage RF Reactive Sputtering.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4380, doi. 10.1142/S0217979202015467
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Low-Voltage and Ultra-Low-Voltage Scanning Electron Microscopy of Semiconductor Surfaces and Devices.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4387, doi. 10.1142/S0217979202015479
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Quantitative Study of Surface Morphology by Atomic Force Microscopy.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4395, doi. 10.1142/S0217979202015480
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Micro-Raman Study of Surface Alterations in InGaAs after Thermal Annealing Treatments.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4401
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Monte Carlo Calculation of the Energy Distribution of Backscattered Electrons.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4405, doi. 10.1142/S0217979202015509
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The Determination of SP[sup 3] Fraction in Tetrahedral Amorphous Carbon Films by Raman and X-Ray Photoelectron Spectroscopy.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4413, doi. 10.1142/S0217979202015510
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Photoreflectance Study of AIN Thin Films Grown by Reactive Gas-Timing RF Magnetron Sputtering.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4418, doi. 10.1142/S0217979202015522
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Symmetry in the Diagonal Self-Assembled InAs Quantum Wire Arrays on InP Substrate.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4423, doi. 10.1142/S0217979202015534
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