Works matching IS 02179792 AND DT 2002 AND VI 16 AND IP 1/2
Results: 56
Crystallization in Amorphous Silicon.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 1, doi. 10.1142/S021797920200938X
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Comparison Studies of Spiral Growth Mechanism in Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub y] and YBa[sub 2]Cu[sub 3]O[sub y] High Temperature Superconducting Single Crystals.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 9, doi. 10.1142/S0217979202009391
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Wettability and Microstructures of Ni-Al/TiC[sub x] System.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 19, doi. 10.1142/S0217979202009408
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In Situ Characterisation of Calcite Growth and Inhibition Using Atomic Force Microscopy.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 25, doi. 10.1142/S021797920200941X
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Supercooling and Interface Morphology of Bi[sub 4]Ge[sub 3]O[sub 12] for Melt Crystal Growth: Experimental Results.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 34, doi. 10.1142/S0217979202009421
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Metal-Oxygen-Hydrogen Solid System of Controlled Composition: Differential Heat Effects, Kinetics, and Mechanisms of the CuO → Cu[sub 4]·OH[sub 2] Grading.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 42, doi. 10.1142/S0217979202009433
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A Study of Chromium on wettability of Liquid Copper on Alumina Ceramics.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 50, doi. 10.1142/S0217979202009445
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Impact of Wide Bandgap p-Type nc-Si on the Performance of a-Si Solar Cells.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 57, doi. 10.1142/S0217979202009457
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Intrinsic Surface and Interface Stress of Low-Dimensional Crystals.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 64, doi. 10.1142/S0217979202009469
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Solution Certainty in the Cu(110)-(2 × 1)-20[sup 2-] Surface Crystallography.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 71, doi. 10.1142/S0217979202009470
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Crystallization Behavior of a Bulk Amorphous Zr[sub 64]Cu[sub 18]Ni[sub 10]Al[sub 8] Alloy.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 79, doi. 10.1142/S0217979202009482
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Interfacial Behavior of Nicalon-Fiber-Feinforced Glass-Ceramic Matrix Composite Due to Creep-Conditioning.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 85, doi. 10.1142/S0217979202009494
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Ion Selectivity During Formation of Passive Films on Stainless Steels and Alloys.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 93, doi. 10.1142/S0217979202009500
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Study of Copper Diffusion Into Tantalum and Tantalum Diffusion Into Copper.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 100, doi. 10.1142/S0217979202009512
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Diffusion of Tl[sup +] Ions Through the Interface of Solid NaCl, KCl or RbCl and Liquid TlCl.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 108, doi. 10.1142/S0217979202009524
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The Impurity Effects on Growth, Structure and Physical Properties of Strontium Nitrate Crystals.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 114, doi. 10.1142/S0217979202009536
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Interfacial Mass Transport in Oxide Crystal Growth.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 122, doi. 10.1142/S0217979202009548
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Nano-Crystal Alloy and Alloy-Oxide Coatings and Their High-Temperature Corrosion Properties.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 128, doi. 10.1142/S021797920200955X
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Decomposition Kinetics of Cu-10aT%Co Alloy Studied by In-Situ Electrical Resistance Measurement.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 137, doi. 10.1142/S0217979202009561
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Studying Non-Uniform Electrodeposition Using the Wire Beam Electrode Method.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 144, doi. 10.1142/S0217979202009573
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Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 151, doi. 10.1142/S0217979202009585
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Experimental Demonstration of Fractal Shape Transition and Fractal Size in Ge Clusters Formation.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 159, doi. 10.1142/S0217979202009597
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Growth and Structural Properties of GaN Films on Flat and Vicinal SiC(0001) Substrates.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 165, doi. 10.1142/S0217979202009603
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Epitaxial Growth of Transparent Conductive Oxides.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 173, doi. 10.1142/S0217979202009615
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Effect of Ceramic Coating Thickness on Residual Stress and Fatigue Characteristic of 1Cr-1Mo-0.25V Steel.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 181, doi. 10.1142/S0217979202009627
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Effect of Underlayers on the Stress of Cu Films Prepared Using Ionized Metal Plasma.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 189, doi. 10.1142/S0217979202009639
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The Effects of HF/PdCl[sub 2] Activation on Electroless Copper Film Properties.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 197, doi. 10.1142/S0217979202009640
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Formation of C54 TiSi[sub 2] on Si(100) Using Ti/Mo and Mo/Ti Bilayers.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 205, doi. 10.1142/S0217979202009652
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Formation Enhancement of the C54-TiSi[sub 2] by a Multi-Cycle Pre-Cooling Treatment.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 213, doi. 10.1142/S0217979202009664
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Structural and Optical Properties of Nanocrystalline Silicon Films Deposited at 150°C.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 219, doi. 10.1142/S0217979202009676
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Computer Simulation of Epitaxial Growth of Silicon on Si (001) Surface.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 227, doi. 10.1142/S0217979202009688
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Microstructural Characterizations of Plasma-Sprayed ZrO[sub 2]/Al[sub 2]O[sub 3] Thermal Barrier Coatings as Related to Oxidation Behavior.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 233, doi. 10.1142/S021797920200969X
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PZT Thick Films Fabrication using a Sol-Gel Based 0-3 Composite Processing.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 242, doi. 10.1142/S0217979202009706
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Formation of Semi-Coherent Interface in TiSi[sub 2]/Si Structure.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 249, doi. 10.1142/S0217979202009718
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Non-Linear Effects of Ti Emission on TiN Film Deposition.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 254, doi. 10.1142/S021797920200972X
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Grain Growth Dependence of Microstructure in La[sub 0.67]Ba[sub 0.33]MnO[sub 3+δ] Oxides.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 261, doi. 10.1142/S0217979202009731
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Crystalline Phase Separation of InGaN Layer Materials Prepared by Metalorganic Chemical Vapor Deposition.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 268, doi. 10.1142/S0217979202009743
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X-Ray Analysis and Microhardness Characterization of TiN/Ti Multilayers.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 275, doi. 10.1142/S0217979202009755
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Preparation and Characterisation of Ti/BaTiO[sub 3]/InP MIS Structures.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 281, doi. 10.1142/S0217979202009767
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Crystal Growth of Al-doped ZnO Films under Different Sputtering Conditions.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 287, doi. 10.1142/S0217979202009779
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Annealing Effects on Contact Properties of Aluminum Doped Zinc Oxide Thin Films.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 294, doi. 10.1142/S0217979202009780
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Crystallization and Optoelectronic Properties of Indium-Zinc-Oxide Thin Films Annealed in Argon and Vacuum.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 302, doi. 10.1142/S0217979202009792
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Crystal Structure and Properties of Cu-Al-O Thin Films.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 308, doi. 10.1142/S0217979202009809
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Crystal Structure and Gas Sensing Properties of Cu-Doped Zinc Oxide.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 314, doi. 10.1142/S0217979202009810
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SIMS Depth Profiling Analysis of Cu/Ta/Si0[sub 2] Interfacial Diffusion at Different Annealing Temperature.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 322, doi. 10.1142/S0217979202009822
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The Role of Structural Defects and Interfacial Instabilities in the Growth Behaviour of Paracetamol.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 329, doi. 10.1142/S0217979202009834
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Growth of Colloidal Crystals Under Microgravity.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 338, doi. 10.1142/S0217979202009846
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Simulation and New Sensor Technologies for Industrial Crystallization: A Review.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 346, doi. 10.1142/S0217979202009858
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Spherulitic Growth in Protein Solutions.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 354, doi. 10.1142/S021797920200986X
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Interactions of Organic Additives with Ionic Crystal Hydrates: The Importance of The Hydrated Layer.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 359, doi. 10.1142/S0217979202009871
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