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Process Induced Stress Optimization for Compressively Stressed p-Channel FinFET at 7N.
- Published in:
- International Journal of High Speed Electronics & Systems, 2021, v. 30, n. 1/2, p. 1, doi. 10.1142/S012915642140005X
- By:
- Publication type:
- Article
Investigation of Structural Parameters Impact on Sensitivity of InP/InGaAs/InP Channel Double Gate MOSFET for Biosensing Application.
- Published in:
- International Journal of High Speed Electronics & Systems, 2021, v. 30, n. 1/2, p. 1, doi. 10.1142/S0129156421400048
- By:
- Publication type:
- Article
Preface.
- Published in:
- 2021
- By:
- Publication type:
- Editorial
Cylindrical SOI Schottky Barrier MOSFET with High Linearity and Low Static Power for Digital and Analog Circuits Application.
- Published in:
- International Journal of High Speed Electronics & Systems, 2021, v. 30, n. 1/2, p. 1, doi. 10.1142/S0129156421400036
- By:
- Publication type:
- Article
Design of Low-Power 16-Bit R-2R Digital-to-Analog Converter for Effective Biomedical Signal Processing.
- Published in:
- International Journal of High Speed Electronics & Systems, 2021, v. 30, n. 1/2, p. 1, doi. 10.1142/S0129156421400012
- By:
- Publication type:
- Article
Electrical Analysis and Comparison of Ta<sub>2</sub>O<sub>5</sub> Tunneling Oxide with SiO<sub>2</sub> in Passivated c-Si Solar Cell.
- Published in:
- International Journal of High Speed Electronics & Systems, 2021, v. 30, n. 1/2, p. 1, doi. 10.1142/S0129156421400024
- By:
- Publication type:
- Article