Found: 13
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Modeling and Simulation of Quasi-Ballistic III-Nitride Transistors for RF and Digital Applications.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419400111
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- Article
Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419400123
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- Article
On the Progress Made in GaN Vertical Device Technology.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S012915641940010X
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- Article
Ultra-Wide Bandgap Al<sub>x</sub>Ga<sub>1-x</sub>N Channel Transistors.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419400093
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- Article
Theory of High Field Transport in β-Ga<sub>2</sub>O<sub>3</sub>.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419400081
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- Article
Opportunities and Challenges in MOCVD of βGa<sub>2</sub>O<sub>3</sub> for Power Electronic Devices.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S012915641940007X
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- Article
β-(Al,Ga)<sub>2</sub>O<sub>3</sub> for High Power Applications — A Review on Material Growth and Device Fabrication.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419400068
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- Article
Application of Atom Probe Tomography for Advancing GaN Based Technology.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419400056
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- Article
Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics.
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- International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419400044
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- Article
High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419400032
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- Publication type:
- Article
Substrate Effects in GaN-on-Silicon RF Device Technology.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419400019
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- Publication type:
- Article
Gallium Oxide Field Effect Transistors — Establishing New Frontiers of Power Switching and Radiation-Hard Electronics.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419400020
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- Article
Preface.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419020014
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- Article