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Optimization of the Design of Terahertz Detectors Based on Si CMOS and AlGaN/GaN Field-Effect Transistors.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400139
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- Publication type:
- Article
High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400115
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- Publication type:
- Article
Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400206
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- Article
Calculation of Modal Gain for Terahertz Lasers Based on HgCdTe Heterostructures with Quantum Wells.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400188
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- Publication type:
- Article
Terahertz Quantum-Cascade Laser Based on the Resonant-Phonon Depopulation Scheme.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S012915641640022X
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- Publication type:
- Article
Improved Performance of Ultrahigh-Sensitive Charge-Sensitive Infrared Phototransistors (CSIP).
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400218
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- Publication type:
- Article
Imaging and Gas Spectroscopy for Health Protection in Sub-THz Frequency Range.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400176
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- Publication type:
- Article
Plasmonic Enhancement of Terahertz Devices Efficiency.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S012915641640019X
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- Publication type:
- Article
THz Spectroscopic Imaging of Chemicals Using IS-TPG.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400164
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- Publication type:
- Article
Plasma Instability of 2D Electrons in a Field Effect Transistor with a Partly Gated Channel.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400152
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- Publication type:
- Article
Intensive Terahertz Radiation from In<sub>X</sub>Ga<sub>1-X</sub>As due to Photo-Dember Effect.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400231
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- Publication type:
- Article
Numerical Characterization of Dyakonov-Shur Instability in Gated Two-Dimensional Electron Systems.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400243
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- Publication type:
- Article
Design and Fabrication of Terahertz Detectors Based on 180-nm CMOS Process Technology.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400140
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- Publication type:
- Article
Terahertz Response of Tightly Concatenated Two Dimensional InGaAs Field-Effect Transistors Integrated on a Single Chip.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400127
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- Publication type:
- Article
AUTHOR INDEX Volume 25 (2016).
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416990019
- Publication type:
- Article
Preface.
- Published in:
- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S012915641602002X
- Publication type:
- Article