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SMALL SIGNAL AND DC CHARACTERISTICS OF ULTRA-THIN GaN/AlN/GaN HFETs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 385, doi. 10.1142/S0129156411006660
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- Article
50-NM SELF-ALIGNED HIGH ELECTRON-MOBILITY TRANSISTORS ON GaAs SUBSTRATES WITH EXTREMELY HIGH EXTRINSIC TRANSCONDUCTANCE AND HIGH GAIN.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 393, doi. 10.1142/S0129156411006672
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- Article
AMPLIFIER GAIN PER STAGE UP TO 0.5 THz USING 35 NM InP HEMT TRANSISTORS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 399, doi. 10.1142/S0129156411006684
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- Article
HIGH EFFICIENCY KA-BAND MMIC SSPA POWER COMBINER FOR NASA'S SPACE COMMUNICATIONS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 405, doi. 10.1142/S0129156411006696
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- Article
NOVEL HIGH TEMPERATURE ANNEALED SCHOTTKY METAL FOR GaN DEVICES.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 417, doi. 10.1142/S0129156411006702
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- Article
EXTRACTION OF GATE CAPACITANCE OF HIGH-FREQUENCY AND HIGH-POWER GaN HEMTs BY MEANS OF CELLULAR MONTE CARLO SIMULATIONS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 423, doi. 10.1142/S0129156411006714
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- Article
PERFORMANCE OF A 600-V, 30-A, BI-DIRECTIONAL SILICON CARBIDE SOLID-STATE CIRCUIT BREAKER.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 433, doi. 10.1142/S0129156411006726
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- Article
PULSE EVALUATION AND RELIABILITY ANALYSIS OF 4H-SiC SGTO MODULES.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 441, doi. 10.1142/S0129156411006738
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- Article
CRYOGENIC OPERATION OF GaN SCHOTTKY RECTIFIERS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 457, doi. 10.1142/S012915641100674X
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- Article
SECOND BREAKDOWN AND SAFE OPERATING AREA OF E-MODE POWER pHEMTs.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 463, doi. 10.1142/S0129156411006751
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- Article
A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION.
- Published in:
- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 471, doi. 10.1142/S0129156411006763
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- Article
III-NITRIDE/SiC SEPARATE ABSORPTION AND MULTIPLICATION AVALANCHE PHOTODIODES:: THE IMPORTANCE OF CONTROLLING POLARIZATION-INDUCED INTERFACE CHARGE.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 487, doi. 10.1142/S0129156411006775
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- Article
PERFORMANCE OF PSEUDOMORPHIC ULTRAVIOLET LEDs GROWN ON BULK ALUMINUM NITRIDE SUBSTRATES.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 497, doi. 10.1142/S0129156411006787
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- Article
BIO-SENSING SENSITIVITY OF A NANOPARTICLE BASED ULTRAVIOLET PHOTODETECTOR.
- Published in:
- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 505, doi. 10.1142/S0129156411006799
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- Article
PERFORMANCE ENHANCEMENT OF InGaN-BASED LASER DIODES USING A STEP-GRADED Al<sub>x</sub>Ga<sub>1-x</sub>N ELECTRON BLOCKING LAYER.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 515, doi. 10.1142/S0129156411006805
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- Article
INTEGRATION OF N- AND P-CONTACTS TO GaN-BASED LIGHT EMITTING DIODES.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 521, doi. 10.1142/S0129156411006817
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- Article
LIMITS OF INFRARED IMAGING.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 529, doi. 10.1142/S0129156411006829
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- Article
TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF TYPE II SUPERLATTICE STRUCTURES WITH VARYING ABSORBER WIDTHS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 541, doi. 10.1142/S0129156411006830
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- Article
ENGINEERING THE BARRIER OF QUANTUM DOTS-IN-A-WELL (DWELL) INFRARED PHOTODETECTORS FOR HIGH TEMPERATURE OPERATION.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 549, doi. 10.1142/S0129156411006842
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- Article
APPLICATION OF EPITAXIAL UNIPOLAR BARRIERS TO REDUCE NOISE CURRENTS IN PHOTODETECTORS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 557, doi. 10.1142/S0129156411006854
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- Article
NON-LINEAR PLASMA OSCILLATIONS IN SEMICONDUCTOR AND GRAPHENE CHANNELS AND APPLICATION TO THE DETECTION OF TERAHERTZ SIGNALS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 567, doi. 10.1142/S0129156411006866
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- Article
ELECTROMAGNETIC COMPOSITE-BASED REFLECTING TERAHERTZ WAVEPLATES.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 583, doi. 10.1142/S0129156411006878
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- Article
A PHYSICS-BASED TUNNELING MODEL FOR SB-HETEROSTRUCTURE BACKWARD TUNNEL DIODE MILLIMETER-WAVE DETECTORS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 589, doi. 10.1142/S012915641100688X
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- Article
FET THZ DETECTORS OPERATING IN THE QUANTUM CAPACITANCE LIMITED REGION.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 597, doi. 10.1142/S0129156411006891
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- Article
A NOVEL SUBWAVELENGTH MICROBOLOMETER FOR TERAHERTZ SENSING.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 611, doi. 10.1142/S0129156411006908
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- Article
STRAIN INDUCED ACTIVE LAYER DESIGN OF GaN-THz QUANTUM CASCADE LASERS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 621, doi. 10.1142/S012915641100691X
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- Article
A 570-630 GHz FREQUENCY DOMAIN TERAHERTZ SPECTROSCOPY SYSTEM BASED ON A BROADBAND QUASI-OPTICAL ZERO BIAS SCHOTTKY DIODE DETECTOR.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 629, doi. 10.1142/S0129156411006921
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- Article
SPATIAL WAVEFUNCTION-SWITCHED (SWS)-FET:: A NOVEL DEVICE TO PROCESS MULTIPLE BITS SIMULTANEOUSLY WITH SUB-PICOSECOND DELAYS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 641, doi. 10.1142/S0129156411006933
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- Article
APPLICATION OF 25 NM QUANTUM DOT GATE FETs TO THE DESIGN OF ADC AND DAC CIRCUITS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 653, doi. 10.1142/S0129156411006945
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- Article
HIGH FREQUENCY GRAPHENE TRANSISTORS USING LARGE-AREA CVD GRAPHENE AND ADVANCED DIELECTRICS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 669, doi. 10.1142/S0129156411006957
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- Article
PERFORMANCE OF A QUANTUM DOT PASSIVELY MODE-LOCKED LASER UNDER OPTICAL FEEDBACK AND TEMPERATURE CONTROL.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 679, doi. 10.1142/S0129156411006969
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- Article
SEMICONDUCTING CARBON NANOTUBE PHOTOVOLTAIC PHOTODETECTORS.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 687, doi. 10.1142/S0129156411006970
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- Article
CHARACTERIZATION OF CONDUCTION MECHANISMS RELEVANT TO DEVICE PERFORMANCE IN NANOPERFORATED GRAPHENE.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 697, doi. 10.1142/S0129156411006982
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- Article
EXTREMELY SCALABLE CROSS-POINT TOP-GATED HETEROJUNCTION TUNNELING-TRANSISTORS.
- Published in:
- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 707, doi. 10.1142/S0129156411006994
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- Article
COMPARISON OF MONOLITHIC PASSIVELY MODE-LOCKED LASERS USING In(Ga)As QUANTUM DOT OR QUANTUM WELL MATERIALS GROWN ON GaAs SUBSTRATES.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 713, doi. 10.1142/S0129156411007008
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- Article
PREFACE.
- Published in:
- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. iii, doi. 10.1142/S0129156411006659
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- Article