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SIMULATION AND EXPERIMENTAL RESULTS ON GaN BASED ULTRA-SHORT PLANAR NEGATIVE DIFFERENTIAL CONDUCTIVITY DIODES FOR THz POWER GENERATION.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 1, doi. 10.1142/S0129156409006035
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- Article
5-TERMINAL THzGaN BASED TRANSISTOR WITH FIELD- AND SPACE-CHARGE CONTROL ELECTRODES.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 7, doi. 10.1142/S0129156409006047
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- Article
PERFORMANCE COMPARISON OF SCALED III-V AND Si BALLISTIC NANOWIRE MOSFETs.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 15, doi. 10.1142/S0129156409006059
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- Article
A ROOM TEMPERATURE BALLISTIC DEFLECTION TRANSISTOR FOR HIGH PERFORMANCE APPLICATIONS.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 23, doi. 10.1142/S0129156409006060
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- Article
EMISSION AND INTENSITY MODULATION OF TERAHERTZ ELECTROMAGNETIC RADIATION UTILIZING 2-DIMENSIONAL PLASMONS IN DUAL-GRATING-GATE HEMT'S.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 33, doi. 10.1142/S0129156409006072
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- Article
MILLIMETER WAVE TO TERAHERTZ IN CMOS.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 55, doi. 10.1142/S0129156409006084
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- Article
THE EFFECTS OF INCREASING AlN MOLE FRACTION ON THE PERFORMANCE OF AlGaN ACTIVE REGIONS CONTAINING NANOMETER SCALE COMPOSITIONALLY INHOMOGENEITIES.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 69, doi. 10.1142/S0129156409006096
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- Article
SURFACE ACOUSTIC WAVE PROPAGATION IN GaN-ON-SAPPHIRE UNDER PULSED SUB-BAND ULTRAVIOLET ILLUMINATION.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 77, doi. 10.1142/S0129156409006102
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- Article
SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 85, doi. 10.1142/S0129156409006114
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- Article
MONTE CARLO SIMULATIONS OF In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs AT 0.5 V SUPPLY VOLTAGE FOR HIGH-PERFORMANCE CMOS.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 93, doi. 10.1142/S0129156409006126
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- Article
THE FIRST 70NM 6-INCH GaAs PHEMT MMIC PROCESS.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 101, doi. 10.1142/S0129156409006138
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- Article
HIGH-PERFORMANCE 50-NM METAMORPHIC HIGH ELECTRON-MOBILITY TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 107, doi. 10.1142/S012915640900614X
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- Article
MBE GROWTH AND CHARACTERIZATION OF Mg-DOPED III-NITRIDES ON SAPPHIRE.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 113, doi. 10.1142/S0129156409006151
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- Article
PERFORMANCE OF MOSFETs ON REACTIVE-ION-ETCHED GaN SURFACES.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 121, doi. 10.1142/S0129156409006163
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- Article
HIGH CURRENT DENSITY/HIGH VOLTAGE AlGaN/GaN HFETs ON SAPPHIRE.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 129, doi. 10.1142/S0129156409006175
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- Article
InAlN/GaN MOS-HEMT WITH THERMALLY GROWN OXIDE.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 137, doi. 10.1142/S0129156409006187
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- Article
GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 145, doi. 10.1142/S0129156409006199
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- Article
4-NM AlN BARRIER ALL BINARY HFET WITH SiN<sub>x</sub> GATE DIELECTRIC.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 153, doi. 10.1142/S0129156409006205
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- Article
EFFECT OF GATE OXIDE PROCESSES ON 4H-SiC MOSFETs ON (000-1) ORIENTED SUBSTRATE.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 161, doi. 10.1142/S0129156409006217
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- Article
CHARACTERIZATION AND MODELING OF INTEGRATED DIODE IN 1.2kV 4H-SiC VERTICAL POWER MOSFET.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 167, doi. 10.1142/S0129156409006229
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- Article
PACKAGING AND WIDE-PULSE SWITCHING OF 4 MM × 4 MM SILICON CARBIDE GTOs.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 173, doi. 10.1142/S0129156409006230
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- Article
BI-DIRECTIONAL SCALABLE SOLID-STATE CIRCUIT BREAKERS FOR HYBRID-ELECTRIC VEHICLES.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 183, doi. 10.1142/S0129156409006242
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- Article
PREFACE.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. iii, doi. 10.1142/S0129156409006023
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- Article