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  • GROWTH OF SiC SUBSTRATES.

    Published in:
    International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 3, p. 751, doi. 10.1142/S0129156406004016
    By:
    • POWELL, ADRIAN;
    • JENNY, JASON;
    • MULLER, STEPHAN;
    • McD. HOBGOOD, H.;
    • TSVETKOV, VALERI;
    • LENOARD, ROBERT;
    • CARTER Jr., CALVIN
    Publication type:
    Article

  • DEEP LEVEL DEFECTS IN SILICON CARBIDE.

    Published in:
    International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 3, p. 779, doi. 10.1142/S0129156406004028
    By:
    • LEBEDEV, A. A.
    Publication type:
    Article

  • SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS.

    Published in:
    International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 3, p. 825, doi. 10.1142/S012915640600403X
    By:
    • STEPHANI, DIETRICH;
    • FRIEDRICHS, PETER
    Publication type:
    Article

  • SiC BJTs.

    Published in:
    International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 3, p. 855, doi. 10.1142/S0129156406004041
    By:
    • Chow, T. Paul;
    • Agarwal, Anant K.
    Publication type:
    Article

  • PREFACE.

    Published in:
    International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 3, p. iii, doi. 10.1142/S0129156406004004
    Publication type:
    Article