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VERTICAL SCALING OF TYPE I InP HBT WITH F<sub>T</sub> > 500 GHZ.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 1
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- Publication type:
- Article
PREFACE.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 1, doi. 10.1142/S0129156404002557
- Publication type:
- Article
2004 IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES.
- Published in:
- 2004
- Publication type:
- Proceeding
NUMERICAL INVESTIGATION OF THE EFFECT OF DOPING PROFILES ON THE HIGH FREQUENCY PERFORMANCE OF InP/InGaAs SUPER SCALED HBTs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 8, doi. 10.1142/S0129156404002594
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- Publication type:
- Article
TUNNEL DIODE/TRANSISTOR DIFFERENTIAL COMPARATOR.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 16, doi. 10.1142/S0129156404002600
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- Publication type:
- Article
BENCHMARK RESULTS FOR HIGH-SPEED 4-BIT ACCUMULATORS IMPLEMENTED IN INDIUM PHOSPHIDE DHBT TECHNOLOGY.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 22, doi. 10.1142/S0129156404002612
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- Publication type:
- Article
ATOMICALLY FLAT III-ANTIMONIDE EPILAYERS GROWN USING LIQUID PHASE EPITAXY.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 28, doi. 10.1142/S0129156404002624
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- Publication type:
- Article
NATIVE DEFECT COMPENSATION IN III-ANTIMONIDE BULK SUBSTRATES.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 34, doi. 10.1142/S0129156404002636
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- Publication type:
- Article
NOISE AND THZ RECTIFICATION CHARACTERISTICS OF ZERO-BIAS QUANTUM TUNNELING SB-HETEROSTRUCTURE DIODES.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 40, doi. 10.1142/S0129156404002648
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- Publication type:
- Article
TEMPERATURE DEPENDENCE OF TERAHERTZ EMISSION FROM SILICON DEVICES DOPED WITH BORON.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 46, doi. 10.1142/S012915640400265X
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- Publication type:
- Article
TWO-DIMENSIONAL ANALYTICAL MODELING AND SIMULATION OF RETROGRADE DOPED HMG MOSFET.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 52, doi. 10.1142/S0129156404002661
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- Publication type:
- Article
ELECTRICAL EFFECTS OF DNA MOLECULES ON SILICON FIELD EFFECT TRANSISTOR.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 60, doi. 10.1142/S0129156404002673
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- Publication type:
- Article
ANALYSIS OF OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FOR APPLICATION IN GHz FREQUENCY RANGE.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 66, doi. 10.1142/S0129156404002685
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- Publication type:
- Article
LIFETIME OF NONEQUILIBRIUM CARRIERS IN AlGaN EPILAYERS WITH HIGH Al MOLAR FRACTION.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 72, doi. 10.1142/S0129156404002697
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- Publication type:
- Article
NOISE CHARACTERISTICS OF 340 nm AND 280 nm GaN-BASED LIGHT EMITTING DIODES.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 78, doi. 10.1142/S0129156404002703
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- Publication type:
- Article
JUNCTION-TEMPERATURE MEASUREMENTS IN GaN UV LIGHT-EMITTING DIODES USING THE DIODE FORWARD VOLTAGE.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 84, doi. 10.1142/S0129156404002715
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- Publication type:
- Article
High Speed 0.9 μm Lateral p-i-n Photodetectors Fabricated in a Standard Commercial GaAs VLSI Process.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 90, doi. 10.1142/S0129156404002727
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- Publication type:
- Article
SELF-GUIDING IN LOW-INDEX-CONTRAST PLANAR PHOTONIC CRYSTALS.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 96, doi. 10.1142/S0129156404002739
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- Publication type:
- Article
OMNI-DIRECTIONAL REFLECTOR USING A LOW REFRACTIVE INDEX MATERIAL.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 102, doi. 10.1142/S0129156404002740
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- Publication type:
- Article
MBE-Grown AIGaN/GaN HEMTs on SiC.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 108, doi. 10.1142/S0129156404002752
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- Publication type:
- Article
STABLE HIGH POWER GaN-ON-GaN HEMT.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 114, doi. 10.1142/S0129156404002764
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- Publication type:
- Article
THICK GaN LAYER GROWN BY Ga VAPOR TRANSPORT TECHNIQUE.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 121, doi. 10.1142/S0129156404002776
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- Publication type:
- Article
DEPENDENCE OF RF PERFORMANCE OF GaN/AlGaN HEMTS UPON AlGaN BARRIER LAYER VARIATION.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 126
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- Publication type:
- Article
SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL<sub>3</sub>/SF<sub>6</sub> MIXTURES.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 132
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- Publication type:
- Article
LOW FREQUENCY NOISE PARAMETERS IN AN AIGaN/ GaN HETEROSTRUCTURE WITH 33% AND 75% Al MOLE FRACTION.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 138, doi. 10.1142/S0129156404002806
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- Publication type:
- Article
TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY POST-GATE- ANNEALING.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 145, doi. 10.1142/S0129156404002818
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- Publication type:
- Article
PHOTOCAPACITANCE OF GaAs THIN-FILM STRUCTURES FABRICATED ON A SEMI-INSULATING COMPENSATED SUBSTRATE.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 151, doi. 10.1142/S012915640400282X
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- Publication type:
- Article
UNSTRAINED InAlN/GaN HEMT STRUCTURE.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 161, doi. 10.1142/S0129156404002831
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- Publication type:
- Article
GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al<sub>2</sub>O<sub>3</sub> AS GATE DIELECTRIC AND SURFACE PASSIVATION.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 167, doi. 10.1142/S0129156404002843
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- Publication type:
- Article
DEPENDENCE OF ELECTRON MOBILITY ON EPI CHANNEL DOPING INGaNMOSFETS.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 173, doi. 10.1142/S0129156404002855
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- Publication type:
- Article
FABRICATION OF SELF-ALIGNED T-GATE AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 181, doi. 10.1142/S0129156404002867
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- Publication type:
- Article
A NEW FIELD-PLATED GaN HEMT STRUCTURE WITH IMPROVED POWER AND NOISE PERFORMANCE.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 186, doi. 10.1142/S0129156404002879
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- Publication type:
- Article
NOISE CHARACTERISTICS OF FIELD-PLATED GAN HEMTS.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 192, doi. 10.1142/S0129156404002880
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- Publication type:
- Article
TEMPERATURE DEPENDENT I-V CHARACTERISTICS OF AlGaN/GaN HBTS AND GaN BJTS.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 195, doi. 10.1142/S0129156404002892
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- Publication type:
- Article
ANALYSIS OF HIGH DC CURRENT GAIN STRUCTURES FOR GaN/InGaN/GaN HBTs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 201, doi. 10.1142/S0129156404002909
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- Publication type:
- Article
ANALYSIS OF GaN HBT STRUCTURES FOR HIGH POWER, HIGH EFFICIENCY MICROWAVE AMPLIFIERS.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 207, doi. 10.1142/S0129156404002910
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- Publication type:
- Article
LEAKY SURFACE ACOUSTIC WAVES IN SINGLE-CRYSTAL A1N SUBSTRATE.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 213, doi. 10.1142/S0129156404002922
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- Publication type:
- Article
HIGH LINEARITY GaN HEMT POWER AMPLIFIER WITH PRE-LINEARIZATION GATE DIODE.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 223, doi. 10.1142/S0129156404002934
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- Publication type:
- Article
SPICE MODEL OF AlGaN/GaN HEMTs AND SIMULATION OF VCO AND POWER AMPLIFIER.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 229, doi. 10.1142/S0129156404002946
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- Publication type:
- Article
HIGH POWER, DRIFT-FREE 4H-SiC PIN DIODES.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 236, doi. 10.1142/S0129156404002958
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- Publication type:
- Article
DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 241, doi. 10.1142/S012915640400296X
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- Publication type:
- Article
HIGH-VOLTAGE DIAMOND SCHOTTKY RECTIFIERS.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 248, doi. 10.1142/S0129156404002971
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- Publication type:
- Article
2 KV 4H-SiC DMOSFETS FOR LOW LOSS, HIGH FREQUENCY SWITCHING APPLICATIONS.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 255, doi. 10.1142/S0129156404002983
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- Publication type:
- Article
SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD- PLATE SiC MESFETs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 260, doi. 10.1142/S0129156404002995
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- Publication type:
- Article
EFFECTS OF BUFFER LAYER THICKNESS AND DOPING CONCENTRATION ON SiC MESFET CHARACTERISTICS.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 266, doi. 10.1142/S0129156404003009
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- Publication type:
- Article
ANALYTICAL MODEL FOR NON-SELF ALIGNED BURIED P-LAYER SiC MESFET.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 273, doi. 10.1142/S0129156404003010
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- Publication type:
- Article
ION IMPLANTED SiC STATIC INDUCTION TRANSISTOR WITH 107 W OUTPUT POWER AND 59% POWER ADDED EFFICIENCY UNDER CW OPERATION AT 750 MHZ.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 282, doi. 10.1142/S0129156404003022
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- Publication type:
- Article
INFLUENCE OF THE N-DIFFUSION LAYER ON THE CHANNEL CURRENT AND THE BREAKDOWN VOLTAGE IN 4H-SiC SIT.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 285, doi. 10.1142/S0129156404003034
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- Publication type:
- Article