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MATERIALS PROPERTIES OF NITRIDES:: SUMMARY.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 1, doi. 10.1142/S012915640400220X
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- Article
KINETICS, MICROSTRUCTURE AND STRAIN IN GaN THIN FILMS GROWN VIA PENDEO-EPITAXY.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 21, doi. 10.1142/S0129156404002211
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- Article
STRAIN OF GaN LAYERS GROWN USING 6H-SiC(0001) SUBSTRATES WITH DIFFERENT BUFFER LAYERS.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 39, doi. 10.1142/S0129156404002223
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- Article
GROWTH OF THICK GaN FILMS AND SEEDS FOR BULK CRYSTAL GROWTH.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 51, doi. 10.1142/S0129156404002235
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- Article
CRACKING OF GaN FILMS.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 63, doi. 10.1142/S0129156404002247
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- Article
DIRECT BONDING OF GaN AND SiC:: A NOVEL TECHNIQUE FOR ELECTRONIC DEVICE FABRICATION.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 83, doi. 10.1142/S0129156404002259
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- Article
Electronic Properties of GaN (0001) – Dielectric Interfaces.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 107, doi. 10.1142/S0129156404002260
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- Article
QUASI-BALLISTIC AND OVERSHOOT TRANSPORT IN GROUP III-NITRIDES.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 127, doi. 10.1142/S0129156404002272
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- Article
HIGH FIELD TRANSPORT IN AlN.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 155, doi. 10.1142/S0129156404002284
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- Article
GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 175, doi. 10.1142/S0129156404002296
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- Article
INSULATED GATE III-N HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 197, doi. 10.1142/S0129156404002302
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- Article
High Voltage AlGaN/GaN Heterojunction Transistors.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 225, doi. 10.1142/S0129156404002314
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- Article
ETCHED APERTURE GaN CAVET THROUGH PHOTOELECTROCHEMICAL WET ETCHING.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 245, doi. 10.1142/S0129156404002326
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- Article
n-AlGaAs/p-GaAs/n-GaN HETEROJUNCTION BIPOLAR TRANSISTOR:: THE FIRST TRANSISTOR FORMED VIA WAFER FUSION.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 265, doi. 10.1142/S0129156404002338
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- Article