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Oxide Wearout, Breakdown, and Reliability.
- Published in:
- International Journal of High Speed Electronics & Systems, 2001, v. 11, n. 3, p. 617, doi. 10.1142/S0129156401000988
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- Publication type:
- Article
Reliability of Flash Nonvolatile Memories.
- Published in:
- International Journal of High Speed Electronics & Systems, 2001, v. 11, n. 3, p. 719, doi. 10.1142/S012915640100099X
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- Publication type:
- Article
Physics and Chemistry of Intrinsic Time-Dependent Dielectric Breakdown in SiO[sub 2]Dielectrics.
- Published in:
- International Journal of High Speed Electronics & Systems, 2001, v. 11, n. 3, p. 751, doi. 10.1142/S0129156401000964
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- Publication type:
- Article
Breakdown Modes and Breakdown Statistics of Ultrathin SiO[sub 2] Gate Oxides.
- Published in:
- International Journal of High Speed Electronics & Systems, 2001, v. 11, n. 3, p. 789, doi. 10.1016/S0129-1564(01)00100-3
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- Publication type:
- Article
MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications.
- Published in:
- International Journal of High Speed Electronics & Systems, 2001, v. 11, n. 3, p. 849, doi. 10.1142/S0129156401001015
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- Publication type:
- Article