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Recent Advances and Future Trends in Modern Electronics.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 1, doi. 10.1142/S0129156400000039
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Fabrication of Electron Field Emitters Using Carbon Nanotubes.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 5, doi. 10.1142/S0129156400000040
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- Article
Metal Induced Crystallization of Amorphous Silicon.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 13, doi. 10.1142/S0129156400000052
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- Article
Polarization Effects in Nitride Semiconductor Heterostructures.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 25, doi. 10.1016/S0129-1564(00)00006-4
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- Article
Ferroelectric Nonvolatile Memory Field-Effect Transistors Based on a Novel Buffer Layer Structure.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 39, doi. 10.1142/S0129156400000076
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- Article
Superlattice Materials for the Next Generation of Long Wavelength Infrared Detectors.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 47, doi. 10.1142/S0129156400000088
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- Article
The Role of Ballistic Electron Emission Microscopy for Characterization of Physical Phenomena in Semiconductor Alloys and Quantum Structures.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 55, doi. 10.1142/S012915640000009X
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- Article
VLSI-Compatible Processing and Low-Voltage Operation of Multiemitter Si/SiGe Heterojunction Bipolar Transistors.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 75, doi. 10.1016/S0129-1564(00)00010-6
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- Article
Room-Temperature Single Electron Devices by Scanning Probe Process.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 83, doi. 10.1142/S0129156400000118
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- Article
<111>-Oriented GaAs/AlGaAs and InGaAs/GaAs Quantum Well Structures Fabricated by MOVPE and Their Optical and Strain-Induced Piezoelectric Properties.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 93, doi. 10.1142/S012915640000012X
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- Article
Electron Drift Velocity of the Two-Dimensional Electron Gas in Compound Semiconductors.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 103, doi. 10.1142/S0129156400000131
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- Article
Frontiers in Electronic Noise : From Submicron to Nano Structures.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 111, doi. 10.1016/S0129-1564(00)00014-3
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- Article
Factors Limiting the Maximum Operating Voltage of Microwave Devices.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 119, doi. 10.1142/S0129156400000155
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- Article
Silicon on Insulator Technology.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 129, doi. 10.1142/S0129156400000167
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- Article
Why Can Smart Cut® Change the Future of Microelectronics?
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 131, doi. 10.1016/S0129-1564(00)00017-9
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- Article
Advanced Sensors and Microsystems on SOI.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 147, doi. 10.1142/S0129156400000180
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- Article
Optimized Design of the Subband Structure in MOS Inversion Layers for Realizing High Performance and Low Power Si Mosfets.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 155, doi. 10.1142/S0129156400000192
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- Article
Overview of the ULSI Session and Chapter.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 171, doi. 10.1142/S0129156400000209
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- Article
Limitations of (and Off) the SIA Roadmap Trends.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 175, doi. 10.1142/S0129156400000210
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- Article
Present Status and Future Trends of the Asian Semiconductor Industry.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 183, doi. 10.1142/S0129156400000222
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- Article
The DRAM Odyssey: From Kilobits to Gigabytes and Beyond.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 187, doi. 10.1142/S0129156400000234
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- Article
To Fill the Gap Between Si-ULSI and Nanodevices.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 197, doi. 10.1142/S0129156400000246
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Innovative Integration Based on Silicon-Core Technologies for Sensor and Communications Applications.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 205, doi. 10.1142/S0129156400000258
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- Article
Ultimate MOSFETs on SOI: Ultra Thin, Single Gate, Double Gate, or Ground Plane.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 217, doi. 10.1016/S0129-1564(00)00026-X
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Straddle-Gate Transistor: A MOSFET in the Limit of Useful Field-Effect.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 231, doi. 10.1142/S0129156400000271
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- Article
COOL Multithreading in HTMT SPELL-1 Processors.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 247, doi. 10.1142/S0129156400000283
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- Article
Overview of the Optoelectronics Sessions and Chapter.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 255, doi. 10.1142/S0129156400000295
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- Article
Role of Dislocations in InGaN-Based LEDs and Laser Diodes.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 271, doi. 10.1142/S0129156400000301
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- Article
Distributed Balanced Photodetector for RF Photonic Applications.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 281, doi. 10.1016/S0129-1564(00)00031-3
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CAD Tools and Optical Device Models for Mixed Electronic/Photonic VLSI.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 299, doi. 10.1016/S0129-1564(00)00032-5
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- Article
Novel Multiwavelength Mode-Locked Semiconductor Lasers: Physics and Applications.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 309, doi. 10.1142/S0129156400000337
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- Article
850-nm Vertical-Cavity Surface-Emitting Lasers on Si Substrates.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 319, doi. 10.1016/S0129-1564(00)00034-9
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- Article
High Speed Resonant-Cavity InGaAs/InAlAs Avalanche Photodiodes.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 327, doi. 10.1142/S0129156400000350
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Microcavities, Photonic Crystals and Semiconductors: From Basic Physics to Applications in Light Emitters.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 339, doi. 10.1016/S0129-1564(00)00036-2
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Advanced Semiconductor Lasers in the 3-10 µm Wavelength Range.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 355, doi. 10.1142/S0129156400000374
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Heterodimensional Contacts and Optical Detectors.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 375, doi. 10.1142/S0129156400000386
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- Article
Photonic Crystal Nanocavity Lasers.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 387, doi. 10.1016/S0129-1564(00)00039-8
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- Article
High Frequency Circuits Based on GaAs Phemt Technology for Modern Sensor and Communication Systems.
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- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 393, doi. 10.1016/S0129-1564(00)00040-4
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- Article