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FOREWORD.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. v, doi. 10.1142/S0129156498000348
- Publication type:
- Article
PREFACE TO "ADVANCES IN SEMICONDUCTOR LASERS AND APPLICATIONS TO OPTOELECTRONICS".
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. ix, doi. 10.1142/S012915649800035X
- Publication type:
- Article
TUNNEL INJECTION LASERS.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 847, doi. 10.1142/S0129156498000361
- By:
- Publication type:
- Article
QUANTUM WELL INTERSUBBAND LASERS.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 867, doi. 10.1142/S0129156498000373
- By:
- Publication type:
- Article
ADVANCES IN MEASUREMENTS OF PHYSICAL PARAMETERS OF SEMICONDUCTOR LASERS.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 901, doi. 10.1142/S0129156498000385
- By:
- Publication type:
- Article
LATERAL INJECTION LASERS.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 941, doi. 10.1142/S0129156498000397
- By:
- Publication type:
- Article
EXTENDED WAVELENGTH (1.0 to 1.3 μm) InGaAs/GaAs QUANTUM DOT GaAs-BASED VERTICAL-CAVITY SURFACE-EMITTING AND LATERAL-CAVITY EDGE-EMITTING LASERS.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 979, doi. 10.1142/S0129156498000403
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- Publication type:
- Article
GaN-BASED LASER DIODES.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 1007, doi. 10.1142/S0129156498000415
- By:
- Publication type:
- Article
QUANTUM DOT SEMICONDUCTOR LASERS.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 1081, doi. 10.1142/S0129156498000427
- By:
- Publication type:
- Article
DEVICES CHARACTERISTICS OF LOW-THRESHOLD QUANTUM-DOT LASERS.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 1109, doi. 10.1142/S0129156498000439
- By:
- Publication type:
- Article
NITRIDE LASERS: OPTICAL GAIN AND DEVICE IMPLICATIONS.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 1139, doi. 10.1142/S0129156498000440
- By:
- Publication type:
- Article
ADVANCED CONCEPTS IN INTERSUBBAND UNIPOLAR LASERS.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 1163, doi. 10.1142/S0129156498000452
- By:
- Publication type:
- Article
OPTOELECTRONIC PROPERTIES OF STRAINED WURTZITE GaN QUANTUM-WELL LASERS.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 1189, doi. 10.1142/S0129156498000464
- By:
- Publication type:
- Article
CARRIER CAPTURE IN SEMICONDUCTOR QUANTUM WELL LASERS: A QUANTUM TRANSPORT ANALYSIS.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 1211, doi. 10.1142/S0129156498000476
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- Publication type:
- Article
QUANTUM STATE ENGINEERING BASED ON ELECTROMAGNETIC ANALOGIES AND NUMERICAL METHODS FOR SEMICONDUCTOR INTERSUBBAND LASERS.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 1235, doi. 10.1142/S0129156498000488
- By:
- Publication type:
- Article
ADVANCED SEMICONDUCTOR LASERS: PHONON ENGINEERING AND PHONON INTERACTIONS.
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 1265, doi. 10.1142/S012915649800049X
- By:
- Publication type:
- Article
AUTHOR INDEX VOLUME 9 (1998).
- Published in:
- International Journal of High Speed Electronics & Systems, 1998, v. 9, n. 4, p. 1279, doi. 10.1142/S0129156498000506
- Publication type:
- Article