Works matching IS 0038111X AND DT 2000 AND VI 43 AND IP 7
Results: 27
SECS is overrated.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 349
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NEW LITERATURE.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 333
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PRODUCT PANORAMA.
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- Solid State Technology, 2000, v. 43, n. 7, p. 295
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- Article
Correlation of FT-IR epitaxial thickness measurement.
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- Solid State Technology, 2000, v. 43, n. 7, p. 289
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Thermal-mechanical stress analysis of a silicon-based system-in-a-package.
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- Solid State Technology, 2000, v. 43, n. 7, p. 279
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Analysis improves thermal control of heated chucks for IC processing.
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- Solid State Technology, 2000, v. 43, n. 7, p. 271
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- Article
The semiconductor industry's SEMI standard GUI.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 263
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Excimer lasers for future lithography light sources.
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- Solid State Technology, 2000, v. 43, n. 7, p. 255
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- Article
Space charge effects in e-beam projection lithography.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 241
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- Article
In situ steam generation: A new rapid thermal oxidation technique.
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- Solid State Technology, 2000, v. 43, n. 7, p. 233
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- Article
Thermal processing in a single wafer rapid thermal furnace.
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- Solid State Technology, 2000, v. 43, n. 7, p. 223
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Processing for advanced devices with hot-wall furnace RTP.
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- Solid State Technology, 2000, v. 43, n. 7, p. 211
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The effect of sub-0.1Mu m filtration on 248nm photoresist performance.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 202
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- Article
Progress for characterization and Advanced reticle repair.
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- Solid State Technology, 2000, v. 43, n. 7, p. 195
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Liners for tungsten plug applications with long throw and ionized PVD.
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- Solid State Technology, 2000, v. 43, n. 7, p. 183
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Process development and monitoring with atomic force profiling for CMP.
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- Solid State Technology, 2000, v. 43, n. 7, p. 167
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- Article
An integrated etch approach as STI evolves for the 100nm regime.
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- Solid State Technology, 2000, v. 43, n. 7, p. 157
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- Article
Modified pump, trap system cuts down PECVD maintenance.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 147
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- Article
TCAD physical verification for reticle enhancement techniques.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 134
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- Article
Chromeless phase-shift masks used for sub-100nm SOI CMOS transistors.
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- Solid State Technology, 2000, v. 43, n. 7, p. 116
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- Article
Noncontact megasonics for post-Cu CMP cleaning.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 105
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- Article
Factors influencing damascene feature fill using copper PVD and electroplating.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 86
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- Article
Improving the forecasts.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 72
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ASIAFOCUS.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 62
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- Article
EUROFOCUS.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 56
- Publication type:
- Article
TECHNOLOGY NEWS.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 36
- Publication type:
- Article
WORLD NEWS.
- Published in:
- Solid State Technology, 2000, v. 43, n. 7, p. 16
- Publication type:
- Article