Differential phase contrast (DPC) mapping electric fields: Optimising experimental conditions.
- Published in:
- Journal of Microscopy, 2024, v. 293, n. 3, p. 177, doi. 10.1111/jmi.13271
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- Publication type:
- Article
Works matching IS 00222720 AND DT 2024 AND VI 293 AND IP 3
Results: 8
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Preface to the special issue on Microscopy of Semiconducting Materials 2023.
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- Journal of Microscopy, 2024, v. 293, n. 3, p. 135, doi. 10.1111/jmi.13265
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- Publication type:
- Article
3
Towards quantification of doping in gallium arsenide nanostructures by low‐energy scanning electron microscopy and conductive atomic force microscopy.
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- Journal of Microscopy, 2024, v. 293, n. 3, p. 160, doi. 10.1111/jmi.13263
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- Publication type:
- Article
4
The evolution of indium precipitation in gallium focused ion beam prepared samples of InGaAs/InAlAs quantum wells under electron beam irradiation.
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- Journal of Microscopy, 2024, v. 293, n. 3, p. 169, doi. 10.1111/jmi.13251
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- Publication type:
- Article
5
Important aspects of investigating optical excitations in semiconductors using a scanning transmission electron microscope.
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- Journal of Microscopy, 2024, v. 293, n. 3, p. 138, doi. 10.1111/jmi.13242
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- Publication type:
- Article
6
The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface.
- Published in:
- Journal of Microscopy, 2024, v. 293, n. 3, p. 146, doi. 10.1111/jmi.13234
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- Publication type:
- Article
7
Field‐dependent abundances of hydride molecular ions in atom probe tomography of III‐N semiconductors.
- Published in:
- Journal of Microscopy, 2024, v. 293, n. 3, p. 153, doi. 10.1111/jmi.13233
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- Publication type:
- Article
8
TOC ‐ Issue Information.
- Published in:
- Journal of Microscopy, 2024, v. 293, n. 3, p. 133, doi. 10.1111/jmi.13196
- Publication type:
- Article