Works matching IS 00222720 AND DT 2017 AND VI 268 AND IP 3
Results: 14
The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template.
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 269, doi. 10.1111/jmi.12651
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Structural characterization of SnS crystals formed by chemical vapour deposition.
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 276, doi. 10.1111/jmi.12652
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Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers.
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 288, doi. 10.1111/jmi.12654
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Transmission electron microscopy of AlGaAs/GaAs quantum cascade laser structures.
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 298, doi. 10.1111/jmi.12655
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The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells.
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 305, doi. 10.1111/jmi.12657
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A reliable approach to prepare brittle semiconducting materials for cross-sectional transmission electron microscopy.
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 225, doi. 10.1111/jmi.12601
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Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations.
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 230, doi. 10.1111/jmi.12602
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TOC - Issue Information.
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 219, doi. 10.1111/jmi.12489
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Surface relaxation of strained Ga(P,As)/GaP heterostructures investigated by HAADF STEM.
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 239, doi. 10.1111/jmi.12622
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Effective absorption correction for energy dispersive X-ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers.
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 248, doi. 10.1111/jmi.12643
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FIB-fabricated complex-shaped 3D chiral photonic silicon nanostructures.
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 254, doi. 10.1111/jmi.12644
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Atomic structure of 'W'-type quantum well heterostructures investigated by aberration-corrected STEM.
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 259, doi. 10.1111/jmi.12647
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Comparative study of image contrast in scanning electron microscope and helium ion microscope.
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 313, doi. 10.1111/jmi.12660
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Preface to special issue on Microscopy of Semiconducting Materials 2017 (MSM-XX).
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- Journal of Microscopy, 2017, v. 268, n. 3, p. 221, doi. 10.1111/jmi.12665
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