Minority carrier lifetime mapping in the SEM.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 297, doi. 10.1111/j.1365-2818.1980.tb00276.x
- By:
- Publication type:
- Article
Works matching IS 00222720 AND DT 1980 AND VI 118 AND IP 3
Results: 17
1
2
Surface studies in a UHV field emission gun scanning electron microscope.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 351, doi. 10.1111/j.1365-2818.1980.tb00284.x
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- Publication type:
- Article
3
Time resolved cathodoluminescence in the scanning electron microscope by use of the streak technique.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 303, doi. 10.1111/j.1365-2818.1980.tb00277.x
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- Publication type:
- Article
4
Nonradiative recombination at dislocations in III-V compound semiconductors.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 255, doi. 10.1111/j.1365-2818.1980.tb00272.x
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- Publication type:
- Article
5
SEM and TEM studies of defects in Si-doped GaAs substrate material before and after Zn diffusion.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 343, doi. 10.1111/j.1365-2818.1980.tb00283.x
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- Publication type:
- Article
6
X-ray topography of large single crystals.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 383, doi. 10.1111/j.1365-2818.1980.tb00287.x
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- Publication type:
- Article
7
The microscopy of semiconducting materials.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 253, doi. 10.1111/j.1365-2818.1980.tb00271.x
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- Publication type:
- Article
8
SEM-EBIC studies of boron implanted silicon.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 337, doi. 10.1111/j.1365-2818.1980.tb00282.x
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- Publication type:
- Article
9
Electron beam depth profiling in semiconductors.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 291, doi. 10.1111/j.1365-2818.1980.tb00275.x
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- Publication type:
- Article
10
The characterization of distortions in heteroepitaxial structures by X-ray multiple diffraction.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 375, doi. 10.1111/j.1365-2818.1980.tb00286.x
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- Publication type:
- Article
11
A correlation between the electrical breakdown of silicon bipolar transistors and impurity precipitates.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 315, doi. 10.1111/j.1365-2818.1980.tb00279.x
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- Publication type:
- Article
12
SEM and TEM observations of emitter-collector pipes in bipolar transistors.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 329, doi. 10.1111/j.1365-2818.1980.tb00281.x
- By:
- Publication type:
- Article
13
Advances in the electrical assessment of semiconductors using the scanning electron microscope.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 275, doi. 10.1111/j.1365-2818.1980.tb00274.x
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- Publication type:
- Article
14
SEM analyses of cathodoluminescence in MgO, CdS and GaAs/Ga<sub> x</sub>Al<sub>1- x</sub>As crystals.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 367, doi. 10.1111/j.1365-2818.1980.tb00285.x
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- Publication type:
- Article
15
A scanning optical microscope for the inspection of semiconductor materials and devices.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 309, doi. 10.1111/j.1365-2818.1980.tb00278.x
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- Publication type:
- Article
16
EBIC microscopy of double-heterostructure laser materials and devices.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 321, doi. 10.1111/j.1365-2818.1980.tb00280.x
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- Publication type:
- Article
17
Observation of dislocations and microplasma sites in semiconductors by direct correlations of STEBIC, STEM and ELS.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 3, p. 263, doi. 10.1111/j.1365-2818.1980.tb00273.x
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- Publication type:
- Article