Interstitial Supersaturation And Climb Of Misfit Dislocations In Phosphorus-Diffused Silicon.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 35, doi. 10.1111/j.1365-2818.1980.tb00243.x
- By:
- Publication type:
- Article
Works matching IS 00222720 AND DT 1980 AND VI 118 AND IP 1
Results: 16
1
2
Tem Of Dislocations Under High Stress In Germanium And Doped Silicon.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 13, doi. 10.1111/j.1365-2818.1980.tb00241.x
- By:
- Publication type:
- Article
3
Characterization Of Grain Boundaries Observed In Polycrystalline Silicon For Solar Cell Applications.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 105, doi. 10.1111/j.1365-2818.1980.tb00252.x
- By:
- Publication type:
- Article
4
Electron Microscope Studies Of Ion Implanted Silicon And Gallium Arsenide After Laser And Furnace Annealing.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 51, doi. 10.1111/j.1365-2818.1980.tb00245.x
- By:
- Publication type:
- Article
5
Cross-Sectional Transmission Electron Microscopy For Polycrystalline Silicon Films.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 97, doi. 10.1111/j.1365-2818.1980.tb00251.x
- By:
- Publication type:
- Article
6
The Microscopy Of Semiconducting Materials.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 1, doi. 10.1111/j.1365-2818.1980.tb00239.x
- By:
- Publication type:
- Article
7
Electron Microscope Studies Of Vpe Gainas Layer Structures Suitable For Use As Infrared Leds.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 117, doi. 10.1111/j.1365-2818.1980.tb00254.x
- By:
- Publication type:
- Article
8
Energy Spectra Of Dislocations In Silicon And Germanium.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 23, doi. 10.1111/j.1365-2818.1980.tb00242.x
- By:
- Publication type:
- Article
9
Extended Screw Dislocation Networks In Silicon.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 83, doi. 10.1111/j.1365-2818.1980.tb00249.x
- By:
- Publication type:
- Article
10
Transmission Electron Microscope Investigations Of Defects Produced By Individual Displacement Cascades In Si And Ge.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 67, doi. 10.1111/j.1365-2818.1980.tb00247.x
- By:
- Publication type:
- Article
11
The Structure And Electrical Properties Of Dislocations In Semiconductors.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 3, doi. 10.1111/j.1365-2818.1980.tb00240.x
- By:
- Publication type:
- Article
12
Tem Study Of Silicon Laser Annealed After The Implantation Of Low Solubility Dopants.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 41, doi. 10.1111/j.1365-2818.1980.tb00244.x
- By:
- Publication type:
- Article
13
The Nature And Origin Of {113} Faults In Irradiated Silicon And Germanium.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 75, doi. 10.1111/j.1365-2818.1980.tb00248.x
- By:
- Publication type:
- Article
14
Electron Microscope Study Of Microtwins In Epitaxial Silicon Films On Sapphire.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 89, doi. 10.1111/j.1365-2818.1980.tb00250.x
- By:
- Publication type:
- Article
15
Microscopy Of Semi-Insulating Gallium Arsenide.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 111, doi. 10.1111/j.1365-2818.1980.tb00253.x
- By:
- Publication type:
- Article
16
Surface Structure Studies Of Electron Beam Annealed Ion Implanted Silicon.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 61, doi. 10.1111/j.1365-2818.1980.tb00246.x
- By:
- Publication type:
- Article