Works matching IS 00222461 AND DT 2006 AND VI 41 AND IP 3


Results: 34
    1
    2

    A review of reviews.

    Published in:
    Journal of Materials Science, 2006, v. 41, n. 3, p. 593, doi. 10.1007/s10853-006-6473-3
    By:
    • Cahn, Robert W.
    Publication type:
    Article
    3
    4
    5
    6
    7
    8
    9
    10
    11
    12
    13

    Defect structure in GaN pyramids.

    Published in:
    Journal of Materials Science, 2006, v. 41, n. 3, p. 779, doi. 10.1007/s10853-006-6563-2
    By:
    • Farrer, Jeffrey K.;
    • Carter, C. Barry
    Publication type:
    Article
    14
    15
    16
    17
    18
    19
    20
    21
    22
    23
    24
    25
    26
    27
    28
    29
    30
    31

    Deep electronic states in ion-implanted Si.

    Published in:
    Journal of Materials Science, 2006, v. 41, n. 3, p. 1007, doi. 10.1007/s10853-006-6597-5
    By:
    • Evans-Freeman, J. H.;
    • Emiroglu, D.;
    • Gad, M. A.;
    • Mitromara, N.;
    • Vernon-Parry, K. D.
    Publication type:
    Article
    32
    33

    Contents By Keyword.

    Published in:
    Journal of Materials Science, 2006, v. 41, n. 3, p. iv, doi. 10.1007/s10853-006-7495-6
    Publication type:
    Article
    34