Works matching IS 00220744 AND DT 2000 AND VI 49 AND IP 2


Results: 21
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    Quantitative TEM of point defects in Si.

    Published in:
    Journal of Electron Microscopy, 2000, v. 49, n. 2, p. 293, doi. 10.1093/oxfordjournals.jmicro.a023809
    By:
    • Eaglesham, D. J.;
    • Venezia, V. C.;
    • Gossmann, H.-J.;
    • Agarwal, A.
    Publication type:
    Article
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