Junctionless nanosheet gate-all-around transistors fabricated on void embedded silicon on insulator substrate.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 4, p. 1, doi. 10.1049/ell2.12740
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- Publication type:
- Article
Works matching IS 00135194 AND DT 2023 AND VI 59 AND IP 4
Results: 4
1
2
High-power-density InAlGaN/GaN HEMT using InGaN back barrier for W-band amplifiers.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 4, p. 1, doi. 10.1049/ell2.12715
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- Publication type:
- Article
3
Decentralized high-resolution direction finding in partly calibrated arrays.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 4, p. 1, doi. 10.1049/ell2.12741
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- Publication type:
- Article
4
Picosecond pulses with 40 W peak power from a passively mode-locked tapered quantum well laser.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 4, p. 1, doi. 10.1049/ell2.12736
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- Publication type:
- Article