Works matching Flash memory

Results: 702

Three‐dimensional AND flash memory.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 10, p. 739, doi. 10.1049/el.2017.0465

By:

Kim, Y.;
Park, I.H.;
Kwon, H.T.;
Wee, D.;
Park, B.‐G.

Publication type:

Article

Modelling by using multiphonon emission theory of data retention characteristics in charge trapping flash memory.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 5, p. 434, doi. 10.1049/el.2015.4427

By:

Son, Y.;
Kang, M.

Publication type:

Article

Threshold‐voltage‐drift‐aware scheduling for belief propagation decoding of LDPC‐coded NAND flash memory.

Published in:

IET Communications (Wiley-Blackwell), 2019, v. 13, n. 17, p. 2871, doi. 10.1049/iet-com.2019.0110

By:

Liu, Wenjie;
Han, Guojun;
Fan, Zhengqin;
Fang, Yi;
Cai, Guofa

Publication type:

Article

Soft‐input bit‐flipping decoding of generalised concatenated codes for application in non‐volatile flash memories.

Published in:

IET Communications (Wiley-Blackwell), 2019, v. 13, n. 4, p. 460, doi. 10.1049/iet-com.2018.5534

By:

Rajab, Mohammed;
Shavgulidze, Sergo;
Freudenberger, Jürgen

Publication type:

Article

Flash Memory for Synaptic Plasticity in Neuromorphic Computing: A Review.

Published in:

Biomimetics (2313-7673), 2025, v. 10, n. 2, p. 121, doi. 10.3390/biomimetics10020121

By:

Im, Jisung;
Pak, Sangyeon;
Woo, Sung-Yun;
Shin, Wonjun;
Lee, Sung-Tae

Publication type:

Article

闪存等级调制移位错误的多重置换纠错码构造.

Published in:

Journal of Signal Processing, 2019, v. 35, n. 4, p. 686, doi. 10.16798/j.issn.1003-0530.2019.04.020

By:

何雅萍;
贺玉成;
周林

Publication type:

Article

面向闪存的树型索引综述.

Published in:

Journal of Computer Engineering & Applications, 2022, v. 58, n. 22, p. 30, doi. 10.3778/j.issn.1002-8331.2112-0066

By:

孙鉴;
武晓晓;
谢开斌;
高锦涛;
刘凇佐;
巫思敏

Publication type:

Article

Electromagnetic interference noise suppression of writing/reading flash memory with multiple‐execution control program.

Published in:

IET Science, Measurement & Technology (Wiley-Blackwell), 2015, v. 9, n. 8, p. 1032, doi. 10.1049/iet-smt.2015.0078

By:

Lin, Han‐Nien;
Kuo, Chung‐Wei;
Chen, Hung‐Chi

Publication type:

Article

基于DSP TMS320F28335 的外扩Flash 存储器.

Published in:

Ordnance Industry Automation, 2020, v. 39, n. 5, p. 23, doi. 10.7690/bgzdh.2020.05.006

By:

曲鹏;
周应旺;
许奔

Publication type:

Article

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation.

Published in:

Small Structures, 2025, v. 6, n. 5, p. 1, doi. 10.1002/sstr.202400495

By:

Choi, Su‐Hwan;
Sim, Jae‐Min;
Shin, Jeongmin;
Ryu, Seong‐Hwan;
Hwang, Taewon;
Lim, So Young;
Oh, Hye‐Jin;
Kwag, Jae‐Hyeok;
Lee, Jun‐Yeoub;
Song, Ki‐Cheol;
Lee, Yeonhee;
Song, Minju;
Kim, Junghwan;
Park, Chang‐Kyun;
Song, Yun‐Heub;
Park, Jin‐Seong

Publication type:

Article

A 512 KBytes Highly Reliable and High-Speed Embedded NOR Flash Memory.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 4, p. 721, doi. 10.3390/electronics14040721

By:

Jiang, Yinuo;
Wang, Zhexian;
Yang, Guangjun;
Du, Tao

Publication type:

Article

Innovative Programming Approaches to Address Z-Interference in High-Density 3D NAND Flash Memory.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 16, p. 3123, doi. 10.3390/electronics13163123

By:

Choi, Yu Jin;
Hong, Seul Ki;
Park, Jong Kyung

Publication type:

Article

Channel Potential of Bandgap-Engineered Tunneling Oxide (BE-TOX) in Inhibited 3D NAND Flash Memory Strings.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 8, p. 1573, doi. 10.3390/electronics13081573

By:

Cho, Taeyoung;
Jung, Sungyeop;
Kang, Myounggon

Publication type:

Article

Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 6, p. 1020, doi. 10.3390/electronics13061020

By:

Kim, Yeeun;
Hong, Seul Ki;
Park, Jong Kyung

Publication type:

Article

RSLSP: An Effective Recovery Scheme for Flash Memory Leveraging Shadow Paging.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 24, p. 4126, doi. 10.3390/electronics11244126

By:

Alahmadi, Abdulhadi;
Chung, Tae Sun

Publication type:

Article

Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 17, p. 2738, doi. 10.3390/electronics11172738

By:

Kim, Beomsu;
Kang, Myounggon

Publication type:

Article

Analysis of HBM Failure in 3D NAND Flash Memory.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 6, p. 944, doi. 10.3390/electronics11060944

By:

Song, Biruo;
Li, Zhiguo;
Wang, Xin;
Fu, Xiang;
Liu, Fei;
Jin, Lei;
Huo, Zongliang

Publication type:

Article

Technique for Profiling the Cycling-Induced Oxide Trapped Charge in NAND Flash Memories.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 20, p. 2492, doi. 10.3390/electronics10202492

By:

Chiu, Yung-Yueh;
Shirota, Riichiro

Publication type:

Article

PA-LIRS: An Adaptive Page Replacement Algorithm for NAND Flash Memory.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 12, p. 2172, doi. 10.3390/electronics9122172

By:

Wang, Fangjun;
Jiang, Xianliang;
Huang, Jifu;
Chen, Fuguang

Publication type:

Article

DSFTL: An Efficient FTL for Flash Memory Based Storage Systems.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 1, p. 145, doi. 10.3390/electronics9010145

By:

Chae, Suk-Joo;
Mativenga, Ronnie;
Paik, Joon-Young;
Attique, Muhammad;
Chung, Tae-Sun

Publication type:

Article

Modeling methodology for thermo-structural analysis of V-NAND flash memory structure.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-89936-8

By:

Kim, Yongha;
Ryu, Seungjun;
Lee, Sungryung

Publication type:

Article

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 14, p. N.PAG, doi. 10.3390/nano12142459

By:

Yu, Xinyue;
Ma, Zhongyuan;
Shen, Zixiao;
Li, Wei;
Chen, Kunji;
Xu, Jun;
Xu, Ling

Publication type:

Article

Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime †.

Published in:

Micromachines, 2024, v. 15, n. 12, p. 1447, doi. 10.3390/mi15121447

By:

Wang, Jialin;
Fan, Yi;
Du, Yajuan;
Huang, Siyi;
Wan, Yu

Publication type:

Article

Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory.

Published in:

Micromachines, 2023, v. 14, n. 11, p. 2007, doi. 10.3390/mi14112007

By:

Go, Donghyun;
Yoon, Gilsang;
Park, Jounghun;
Kim, Donghwi;
Kim, Jiwon;
Kim, Jungsik;
Lee, Jeong-Soo

Publication type:

Article

An Efficient and Robust Partial Differential Equation Solver by Flash-Based Computing in Memory.

Published in:

Micromachines, 2023, v. 14, n. 5, p. 901, doi. 10.3390/mi14050901

By:

Qi, Yueran;
Feng, Yang;
Wu, Jixuan;
Sun, Zhaohui;
Bai, Maoying;
Wang, Chengcheng;
Wang, Hai;
Zhan, Xuepeng;
Zhang, Junyu;
Liu, Jing;
Chen, Jiezhi

Publication type:

Article

Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory.

Published in:

Micromachines, 2021, v. 12, n. 11, p. 1401, doi. 10.3390/mi12111401

By:

Jeong, Jun-Kyo;
Sung, Jae-Young;
Ko, Woon-San;
Nam, Ki-Ryung;
Lee, Hi-Deok;
Lee, Ga-Won

Publication type:

Article

Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory.

Published in:

Micromachines, 2021, v. 12, n. 11, p. 1297, doi. 10.3390/mi12111297

By:

Jung, Woo-Jin;
Park, Jun-Young

Publication type:

Article

Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories.

Published in:

Micromachines, 2021, v. 12, n. 10, p. 1152, doi. 10.3390/mi12101152

By:

Chen, Fei;
Chen, Bo;
Lin, Hongzhe;
Kong, Yachen;
Liu, Xin;
Zhan, Xuepeng;
Chen, Jiezhi

Publication type:

Article

Artificial Neural Network Assisted Error Correction for MLC NAND Flash Memory.

Published in:

Micromachines, 2021, v. 12, n. 8, p. 879, doi. 10.3390/mi12080879

By:

He, Ruiquan;
Hu, Haihua;
Xiong, Chunru;
Han, Guojun

Publication type:

Article

Observation and Optimization on Garbage Collection of Flash Memories: The View in Performance Cliff.

Published in:

Micromachines, 2021, v. 12, n. 7, p. 846, doi. 10.3390/mi12070846

By:

Du, Yajuan;
Liu, Wei;
Gao, Yuan;
Ausavarungnirun, Rachata

Publication type:

Article

A Flexible Hybrid BCH Decoder for Modern NAND Flash Memories Using General Purpose Graphical Processing Units (GPGPUs).

Published in:

Micromachines, 2019, v. 10, n. 6, p. 365, doi. 10.3390/mi10060365

By:

Subbiah, Arul;
Ogunfunmi, Tokunbo

Publication type:

Article

Self-adaptive testing to determine sample size for flash memory solutions.

Published in:

KSII Transactions on Internet & Information Systems, 2014, v. 8, n. 6, p. 2139, doi. 10.3837/tiis.2014.06.019

By:

Chul-Hoon Byun;
Chang-Kyun Jeon;
Taek Lee;
Hoh Peter In

Publication type:

Article

Data Randomization Scheme for Endurance Enhancement and Interference Mitigation of Multilevel Flash Memory Devices.

Published in:

ETRI Journal, 2013, v. 35, n. 1, p. 166, doi. 10.4218/etrij.13.0212.0273

By:

Jaewon Cha;
Sungho Kang

Publication type:

Article

Fast NAND Flash Memory System for Instruction Code Execution.

Published in:

ETRI Journal, 2012, v. 34, n. 5, p. 787, doi. 10.4218/etrij.12.0211.0472

By:

Bo-Sung Jung;
Cheong-Ghil Kim;
Jung-Hoon Lee

Publication type:

Article

STANDARDS COMPETITION IN THE PRESENCE OF DIGITAL CONVERSION TECHNOLOGY: AN EMPIRICAL ANALYSIS OF THE FLASH MEMORY CARD MARKET.

Published in:

MIS Quarterly, 2012, v. 36, n. 3, p. 921, doi. 10.2307/41703486

By:

Zhechao Liu, Charles;
Kemerer, Chris F.;
Slaughter, Sandra A.;
Smith, Michael D.

Publication type:

Article

Performance Appraisal and Static Behaviour Modeling of a Nano-scale Flash Memory Cell by Using Quantum Dots' Floating Gate.

Published in:

International Journal of Simulation: Systems, Science & Technology, 2014, v. 15, n. 6, p. 19, doi. 10.5013/IJSSST.a.15.06.03

By:

Dhavse, Rasika;
Mishra, Vivekanand;
Patrikar, Rajendra

Publication type:

Article

A Relative Reference Responsive LRU based Page Replacement Algorithm for NAND Flash Memory.

Published in:

Webology, 2021, v. 18, n. 1, p. 62, doi. 10.14704/WEB/V18I1/WEB18027

By:

Paulson, Hitha;
Rajesh, R.

Publication type:

Article

NAND flash memory system based on the Harvard buffer architecture for multimedia applications.

Published in:

Multimedia Tools & Applications, 2015, v. 74, n. 16, p. 6287, doi. 10.1007/s11042-014-2122-z

By:

Kim, Cheong;
Kim, Kuinam;
Lee, JungHoon

Publication type:

Article

A high performance NAND array file system based on multiple NAND flash memories.

Published in:

Journal of Supercomputing, 2013, v. 64, n. 2, p. 492, doi. 10.1007/s11227-011-0714-1

By:

Park, Sang;
Lee, Yang;
Kim, Sung

Publication type:

Article

Effect of field oxide structure on endurance characteristics of NAND flash memory.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 11, p. 739, doi. 10.1049/el.2014.0522

By:

Kim, Kiyong;
Yoon, Joongho;
Kim, Yungsam;
Kim, Hongsig;
Lee, Haebum;
Cho, Insoo;
Kim, Sangsoo;
Choi, Byoungdeog

Publication type:

Article

Coding schemes for multi‐level Flash memories that are intrinsically resistant against unknown gain and/or offset using reference symbols.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 1, p. 20, doi. 10.1049/el.2013.3558

By:

Immink, K.A.S.

Publication type:

Article

A NEW ADAPTIVE GREY DECISION-ENERGY AWARE MANAGEMENT SYSTEM BASED ON THE OPTIMAL-READ ONLY-WRITE BUFFER ARCHITECTURE FOR FLASH MEMORY IN EMBEDDED AND MOBILE DEVICES.

Published in:

Intelligent Automation & Soft Computing, 2010, v. 16, n. 4, p. 495, doi. 10.1080/10798587.2010.10643096

By:

Huang, W. T.;
Chen, C. H.;
Jeong, H.-D. J.;
Chen, C. T.

Publication type:

Article

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors.

Published in:

Sensors (14248220), 2023, v. 23, n. 6, p. 3212, doi. 10.3390/s23063212

By:

Fan, Hanshui;
Tian, Xuan;
Peng, Huiting;
Shen, Yinfeng;
Li, Liang;
Li, Ming;
Gao, Liming

Publication type:

Article

Asymmetric Programming: A Highly Reliable Metadata Allocation Strategy for MLC NAND Flash Memory-Based Sensor Systems.

Published in:

Sensors (14248220), 2014, v. 14, n. 10, p. 18851, doi. 10.3390/s141018851

By:

Min Huang;
Zhaoqing Liu;
Liyan Qiao

Publication type:

Article

HAIPO: Hybrid AI Algorithm-Based Post-Fabrication Optimization for Modern 3D NAND Flash Memory.

Published in:

Processes, 2024, v. 12, n. 12, p. 2760, doi. 10.3390/pr12122760

By:

Kim, Myungsuk

Publication type:

Article

Sanitization of Data in Nanoscale Flash Memory by Thermal Erasing and Reuse of Storage.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 14, p. 1, doi. 10.1002/pssa.201800194

By:

Park, Jun‐Young;
Moon, Dong‐Il;
Kim, Seong‐Yeon;
Im, Hwon;
Chang, Ki Soo;
Jeong, Chanbae;
Choi, Yang‐Kyu

Publication type:

Article

Development of Flash Memory Page Management Techniques.

Published in:

Journal of Information Processing Systems, 2018, v. 14, n. 3, p. 631, doi. 10.3745/JIPS.04.0073

By:

Jeong-Joon Kim

Publication type:

Article

A Column-Aware Index Management Using Flash Memory for Read-Intensive Databases.

Published in:

Journal of Information Processing Systems, 2015, v. 11, n. 3, p. 389, doi. 10.3745/JIPS.04.0017

By:

Si-Woo Byun;
Seok-Woo Jang

Publication type:

Article

RTFTL: design and implementation of real-time FTL algorithm for flash memory.

Published in:

Journal of Supercomputing, 2022, v. 78, n. 17, p. 18959, doi. 10.1007/s11227-022-04602-4

By:

He, Qinlu;
Bian, Genqing;
Zhang, Weiqi;
Li, Zhen

Publication type:

Article

E<sup>3</sup>C Techniques for Protecting NAND Flash Memories.

Published in:

Journal of Electronic Testing, 2023, v. 39, n. 4, p. 487, doi. 10.1007/s10836-023-06075-6

By:

Lu, Shyue-Kung;
Tsai, Zeng-Long

Publication type:

Article