Works matching Epitaxy

Results: 5000

Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy.

Published in:

Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03844-2

By:

Nurzal, Nurzal;
Hsu, Ting-Yu;
Susanto, Iwan;
Yu, Ing-Song

Publication type:

Article

Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 2023, v. 260, n. 7, p. 1, doi. 10.1002/pssb.202300034

By:

Littmann, Mario;
Reuter, Dirk;
As, Donat Josef

Publication type:

Article

Applications of remote epitaxy and van der Waals epitaxy.

Published in:

Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00369-3

By:

Roh, Ilpyo;
Goh, Seok Hyeon;
Meng, Yuan;
Kim, Justin S.;
Han, Sangmoon;
Xu, Zhihao;
Lee, Han Eol;
Kim, Yeongin;
Bae, Sang-Hoon

Publication type:

Article

Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS 2 Layers by Plasma-Assisted Molecular Beam Epitaxy.

Published in:

Nanomaterials (2079-4991), 2024, v. 14, n. 8, p. 732, doi. 10.3390/nano14080732

By:

Susanto, Iwan;
Liu, Hong-Shan;
Ho, Yen-Ten;
Yu, Ing-Song

Publication type:

Article

Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 2, p. 1, doi. 10.1002/pssr.202300340

By:

Sala, Elisa M.;
Na, Young In;
Godsland, Max;
Heffernan, Jon

Publication type:

Article

Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 9, p. 1, doi. 10.1002/pssr.202100283

By:

Sala, Elisa M.;
Godsland, Max;
Trapalis, Aristotelis;
Heffernan, Jon

Publication type:

Article

InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy.

Published in:

Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 8, p. 1, doi. 10.1002/pssr.202000173

By:

Sala, Elisa Maddalena;
Na, Young In;
Godsland, Max;
Trapalis, Aristotelis;
Heffernan, Jon

Publication type:

Article

Epitaxy of LiNbO 3 : Historical Challenges and Recent Success.

Published in:

Crystals (2073-4352), 2021, v. 11, n. 4, p. 397, doi. 10.3390/cryst11040397

By:

Zivasatienraj, Bill;
Tellekamp, M. Brooks;
Doolittle, W. Alan

Publication type:

Article

Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 864, doi. 10.1007/s11664-007-0113-9

By:

Hails, Janet E.;
Keir, Andrew M.;
Graham, Andrew;
Williams, Gerald M.;
Giess, Jean

Publication type:

Article

Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates.

Published in:

Nanoscale Research Letters, 2010, v. 5, n. 2, p. 308, doi. 10.1007/s11671-009-9481-9

By:

Lee, J. H.;
Wang, Zh. M.;
Kim, E. S.;
Kim, N. Y.;
Park, S. H.;
Salamo, G. J.

Publication type:

Article

Effective Band Gap of CdHgTe Heteroepitaxial Structures Grown by Molecular Beam and Liquid Phase Epitaxy.

Published in:

Journal of Communications Technology & Electronics, 2024, v. 69, n. 4, p. 211, doi. 10.1134/S1064226924700438

By:

Nikonov, A. V.;
Boltar, K. O.

Publication type:

Article

半导体单量子点的分子束外延生长及调控.

Published in:

Journal of Synthetic Crystals, 2023, v. 52, n. 6, p. 982

By:

宋长坤;
黄晓莹;
陈英鑫;
喻颖;
余思远

Publication type:

Article

石墨烯上远程外延Ge 纳米柱.

Published in:

Journal of Synthetic Crystals, 2022, v. 51, n. 9/10, p. 1769

By:

谢景龙;
袁国文;
廖俊杰;
潘睿;
樊星;
张微微;
袁紫媛;
李晨;
高力波;
芦红

Publication type:

Article

Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2D materials-coated substrates.

Published in:

Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00387-1

By:

Wang, Xuejing;
Choi, Joonghoon;
Yoo, Jinkyoung;
Hong, Young Joon

Publication type:

Article

Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 3, p. 1, doi. 10.1002/pssa.202000447

By:

Strömberg, Axel;
Bhargava, Prakhar;
Xu, Zhehan;
Lourdudoss, Sebastian;
Sun, Yan-Ting

Publication type:

Article

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600454

By:

Sejil, S.;
Lazar, M.;
Carole, D.;
Brylinski, C.;
Planson, D.;
Ferro, G.;
Raynaud, C.

Publication type:

Article

High-current Al Ga N/ Ga N high electron mobility transistors achieved by selective-area growth via plasma-assisted molecular beam epitaxy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 1, p. 180, doi. 10.1002/pssa.201330157

By:

Pang, Liang;
Krein, Philip;
Kim, Ki‐Won;
Lee, Jung‐Hee;
Kim, Kyekyoon (Kevin)

Publication type:

Article

Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 14, p. N.PAG, doi. 10.3390/nano12142435

By:

Wu, Chia-Hsing;
Huang, Yu-Che;
Ho, Yen-Teng;
Chang, Shu-Jui;
Wu, Ssu-Kuan;
Huang, Ci-Hao;
Chou, Wu-Ching;
Yang, Chu-Shou

Publication type:

Article

Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 14, p. N.PAG, doi. 10.3390/nano12142341

By:

Gridchin, Vladislav O.;
Dvoretckaia, Liliia N.;
Kotlyar, Konstantin P.;
Reznik, Rodion R.;
Parfeneva, Alesya V.;
Dragunova, Anna S.;
Kryzhanovskaya, Natalia V.;
Dubrovskii, Vladimir G.;
Cirlin, George E.

Publication type:

Article

Revisiting the van der Waals Epitaxy in the Case of (Bi 0.4 Sb 0.6) 2 Te 3 Thin Films on Dissimilar Substrates.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 11, p. 1790, doi. 10.3390/nano12111790

By:

Mulder, Liesbeth;
Wielens, Daan H.;
Birkhölzer, Yorick A.;
Brinkman, Alexander;
Concepción, Omar

Publication type:

Article

Modeling of Al and Ga Droplet Nucleation during Droplet Epitaxy or Droplet Etching.

Published in:

Nanomaterials (2079-4991), 2021, v. 11, n. 2, p. 468, doi. 10.3390/nano11020468

By:

Heyn, Christian;
Feddersen, Stefan;
Estellé, Patrice;
Piñeiro, Manuel M.

Publication type:

Article

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows.

Published in:

Nanomaterials (2079-4991), 2021, v. 11, n. 1, p. 11, doi. 10.3390/nano11010011

By:

Shamakhov, Viktor;
Nikolaev, Dmitriy;
Slipchenko, Sergey;
Fomin, Evgenii;
Smirnov, Alexander;
Eliseyev, Ilya;
Pikhtin, Nikita;
Kop'ev, Peter

Publication type:

Article

2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications.

Published in:

Nanomaterials (2079-4991), 2020, v. 10, n. 9, p. 1653, doi. 10.3390/nano10091653

By:

Wang, Shifeng;
Li, Yong;
Ng, Annie;
Hu, Qing;
Zhou, Qianyu;
Li, Xin;
Liu, Hao

Publication type:

Article

Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper Barrier.

Published in:

Coatings (2079-6412), 2019, v. 9, n. 5, p. 318, doi. 10.3390/coatings9050318

By:

Guan, He;
Wang, Shaoxi;
Chen, Lingli;
Gao, Bo;
Wang, Ying;
Jiang, Chengyu

Publication type:

Article

Exciton Spectra and Energy Transfer in CdTe/ZnTe Double Quantum Wells Grown by Atomic-Layer Epitaxy.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2060, doi. 10.1134/S1063782619120029

By:

Agekyan, V.;
Chukeev, M.;
Karczewski, G.;
Serov, A.;
Filosofov, N.;
Reznitsky, A.

Publication type:

Article

Epitaxial Growth of BaBiO 3 Thin Films on SrTiO 3 (001) and MgO(001) Substrates Using Molecular Beam Epitaxy: Controlling the Competition Between Crystal Orientations.

Published in:

Crystals (2073-4352), 2025, v. 15, n. 6, p. 534, doi. 10.3390/cryst15060534

By:

Ahmed, Islam;
De Gendt, Stefan;
Merckling, Clement

Publication type:

Article

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy.

Published in:

Materials (1996-1944), 2024, v. 17, n. 4, p. 845, doi. 10.3390/ma17040845

By:

Liu, Linsheng;
Chen, Ruolin;
Kong, Chongtao;
Deng, Zhen;
Liu, Guipeng;
Yan, Jianfeng;
Qin, Le;
Du, Hao;
Song, Shuxiang;
Zhang, Xinhui;
Wang, Wenxin

Publication type:

Article

Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5154, doi. 10.1007/s11664-020-08188-6

By:

Schwarz, Daniel;
Funk, Hannes S.;
Oehme, Michael;
Schulze, Jörg

Publication type:

Article

Selective-Area Epitaxy of CdTe on CdTe/ZnTe/Si(211) Through a Nanopatterned Silicon Nitride Mask.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2899, doi. 10.1007/s11664-012-2056-z

By:

Fahey, S.;
Bommena, R.;
Kodama, R.;
Sporken, R.;
Sivananthan, S.

Publication type:

Article

Growth of GaN on Buffer Layers with Different Polarities by Hydride Vapor-Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 436, doi. 10.1007/s11664-006-0086-0

By:

Kai Qiu;
Li, X. H.;
Zhong, F.;
Yin, Z. J.;
Luo, X. D.;
Ji, C. J.;
Han, Q. F.;
Chen, J. R.;
Cao, X. C.;
Xie, X. J.;
Wang, Y. Q.

Publication type:

Article

SELF-ASSEMBLED INDIUM-ARSENIDE ELONGATED NANOSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY.

Published in:

International Journal of Nanoscience, 2005, v. 4, n. 2, p. 253, doi. 10.1142/S0219581X05003012

By:

Suraprapapich, S.;
Thainoi, S.;
Laliew, C.;
Kanjanachuchai, S.;
Panyakeow, S.

Publication type:

Article

Van der Waals Epitaxy of HgCdTe Thin Films for Flexible Infrared Optoelectronics.

Published in:

Advanced Materials Interfaces, 2023, v. 10, n. 4, p. 1, doi. 10.1002/admi.202201932

By:

Pan, Wenwu;
Zhang, Zekai;
Gu, Renjie;
Ma, Shuo;
Faraone, Lorenzo;
Lei, Wen

Publication type:

Article

Hints for a General Understanding of the Epitaxial Rules for van der Waals Epitaxy from Ge‐Sb‐Te Alloys.

Published in:

Advanced Materials Interfaces, 2022, v. 9, n. 9, p. 1, doi. 10.1002/admi.202101556

By:

Arciprete, Fabrizio;
Boschker, Jos Emiel;
Cecchi, Stefano;
Zallo, Eugenio;
Bragaglia, Valeria;
Calarco, Raffaella

Publication type:

Article

Molecular‐Beam Epitaxy of 3D Topological Insulator Thin Films and Devices on Si Substrates.

Published in:

Physica Status Solidi (B), 2021, v. 258, n. 1, p. 1, doi. 10.1002/pssb.202000007

By:

Mussler, Gregor

Publication type:

Article

Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 4, p. 626, doi. 10.1002/pssb.201552550

By:

Hestroffer, Karine;
Lund, Cory;
Li, Haoran;
Keller, Stacia;
Speck, James S.;
Mishra, Umesh K.

Publication type:

Article

Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy.

Published in:

Applied Sciences (2076-3417), 2020, v. 10, n. 9, p. 3050, doi. 10.3390/app10093050

By:

Prabaswara, Aditya;
Birch, Jens;
Junaid, Muhammad;
Serban, Elena Alexandra;
Hultman, Lars;
Hsiao, Ching-Lien

Publication type:

Article

Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy.

Published in:

Applied Sciences (2076-3417), 2020, v. 10, n. 2, p. 639, doi. 10.3390/app10020639

By:

Minghui Gu;
Chen Li;
Yuanfeng Ding;
Kedong Zhang;
Shunji Xia;
Yusheng Wang;
Ming-Hui Lu;
Hong Lu;
Yan-Feng Chen

Publication type:

Article

Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique.

Published in:

Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1455-0

By:

Chen, Hugo;
Yang, Dian-Long;
Huang, Tseh-Wet;
Yu, Ing-Song

Publication type:

Article

Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy.

Published in:

Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1897, doi. 10.1007/s11671-010-9752-5

By:

Somaschini, C.;
Bietti, S.;
Fedorov, A.;
Koguchi, N.;
Sanguinetti, S.

Publication type:

Article

Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy.

Published in:

Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1865, doi. 10.1007/s11671-010-9699-6

By:

Somaschini, C.;
Bietti, S.;
Fedorov, A.;
Koguchi, N.;
Sanguinetti, S.

Publication type:

Article

Structural and surface characterizations of 2D β-In2Se3/3D β-Ga2O3 heterostructures grown on c-Sapphire substrates by molecular beam epitaxy.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-55830-y

By:

Nallasani, Umeshwar Reddy;
Wu, Ssu-Kuan;
Diep, Nhu Quynh;
Lin, Yen-Yu;
Wen, Hua-Chiang;
Chou, Wu-Ching;
Chia, Chin-Hau

Publication type:

Article

机器学习在分子束外延生长的应用进展.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 6, p. 924, doi. 10.16553/j.cnki.issn1000-985x.2024.0272

By:

杨再洪;
周灿;
范柳燕;
张燕辉;
陈泽中;
陈平平

Publication type:

Article

金属调制分子束外延生长氮化铝薄膜.

Published in:

Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 878

By:

刘欢;
邵鹏飞;
陈松林;
周辉;
李思琦;
陶涛;
谢自力;
刘斌;
陈敦军;
郑有炓;
张荣;
王科

Publication type:

Article

分子束外延高 Al 组分 AlGaN 薄膜及 Si 掺杂研究.

Published in:

Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 783

By:

梁潇;
李思琦;
王中伟;
邵鹏飞;
陈松林;
陶涛;
谢自力;
刘斌;
陈敦军;
郑有炓;
张荣;
王科

Publication type:

Article

Growth of Quantum-Well Heterostructures by Liquid Phase Epitaxy.

Published in:

Critical Reviews in Solid State & Materials Science, 2006, v. 31, n. 1/2, p. 1, doi. 10.1080/10408430500538695

By:

Mishurnyi, V. A.;
De Anda, F.;
Elyukhin, V. A.;
Hernandez, I. C.

Publication type:

Article

Nanoscale epitaxial growth control of oxide thin films by laser molecular beam epitaxy—towards oxide nanoelectronics

Published in:

Science & Technology of Advanced Materials, 2004, v. 5, n. 4, p. 527, doi. 10.1016/j.stam.2004.02.010

By:

Yoshimoto, Mamoru;
Sasaki, Atsushi;
Akiba, Shusaku

Publication type:

Article

Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review.

Published in:

Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00368-4

By:

Ji, Jongho;
Kwak, Hoe-Min;
Yu, Jimyeong;
Park, Sangwoo;
Park, Jeong-Hwan;
Kim, Hyunsoo;
Kim, Seokgi;
Kim, Sungkyu;
Lee, Dong-Seon;
Kum, Hyun S.

Publication type:

Article

Uncovering the influence of nitridation on the dislocation density at atomistic scale in III-Nitrides MOCVD/MOVPE epitaxy process.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-89681-y

By:

Saxena, P. K.;
Srivastava, P.;
Srivastava, Anshika;
Saxena, Anshu

Publication type:

Article

Sputter Epitaxy of AlN and GaN on Si(111).

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 8, p. 1, doi. 10.1002/pssa.202200609

By:

Dadgar, Armin;
Hörich, Florian;
Borgmann, Ralf;
Bläsing, Jürgen;
Schmidt, Gordon;
Veit, Peter;
Christen, Jürgen;
Strittmatter, André

Publication type:

Article

Halide Vapor Phase Epitaxy of In2O3 and (In1−xGax)2O3 on Sapphire Substrates and GaN/Al2O3 Templates.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 3, p. 1, doi. 10.1002/pssa.202000442

By:

Stepanov, Sergey;
Nikolaev, Vladimir;
Pechnikov, Alexei;
Scheglov, Mikhail;
Chikiryaka, Andrei;
Chernykh, Alexey;
Odnobludov, Maxim;
Andreeva, Valentina;
Polyakov, Alexander Y.

Publication type:

Article