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A 10 V Transfer Standard Based on Low-Noise Solid-State Zener Voltage Reference ADR1000.
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- Metrology, 2024, v. 4, n. 1, p. 98, doi. 10.3390/metrology4010007
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SYMBOL SPOTTING IN ELECTRONIC IMAGES USING MORPHOLOGICAL FILTERS AND HOUGH TRANSFORM.
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- Science Journal of University of Zakho, 2022, v. 10, n. 3, p. 119, doi. 10.25271/sjuoz.2022.10.3.874
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Designing A Zener Diode Using Ag<sub>2</sub>O<sub>(1-X)</sub>Zno<sub>(X)</sub>/Psi Structures Deposited by Laser Induced Plasma Technique.
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- Iraqi Journal of Science, 2020, v. 61, n. 5, p. 1032, doi. 10.24996/ijs.2020.61.5.12
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Low on-state voltage and saturation current Trench Insulated Gate Bipolar Transistor with integrated Zener diode.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 24, p. 1608, doi. 10.1049/el.2017.2913
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Structural, electronic, and magnetic properties of transition metal doped ReS monolayer.
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- JETP Letters, 2017, v. 105, n. 4, p. 255, doi. 10.1134/S0021364017040038
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Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier.
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- Semiconductors, 2015, v. 49, n. 11, p. 1448, doi. 10.1134/S1063782615110147
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Electrical predictive model of Zener diode under pulsed EOS.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 4, p. 327, doi. 10.1049/el.2014.4311
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Technology Computer-Aided Design and Study of Prototypes of a Silicon Zener Diode.
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- Journal of Engineering Physics & Thermophysics, 2014, v. 87, n. 4, p. 997, doi. 10.1007/s10891-014-1097-y
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- Article
Early History of Shunt Diode Safety Barriers.
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- Measurement & Control (0020-2940), 2014, v. 47, n. 2, p. 48, doi. 10.1177/0020294013516947
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Reverse-Conducting IGBT Using MEMS Technology on the Wafer Back Side.
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- ETRI Journal, 2013, v. 35, n. 4, p. 603, doi. 10.4218/etrij.13.1912.0030
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Key Comparisons of the Standards of the Volt of the Russian Federation and the Republic of Belarus.
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- Measurement Techniques, 2013, v. 56, n. 5, p. 570, doi. 10.1007/s11018-013-0246-6
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- Article
SURFACE DISTRIBUTION OF THE EMITTING INTENSITY OF GaP LIGHT-EMITTING DIODES.
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- Nuclear Physics & Atomic Energy, 2013, v. 14, n. 2, p. 158
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- Article
Zener tunneling between the landau levels in quasi-two-dimensional electronic Corbino disks at large filling factors.
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- JETP Letters, 2013, v. 96, n. 12, p. 803, doi. 10.1134/S0021364012240046
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- Article
On the interaction of electromagnetic waves with conductors.
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- Canadian Journal of Physics, 2012, v. 90, n. 9, p. 849, doi. 10.1139/p2012-080
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Er<sub>2</sub> O<sub>3</sub> Doping Effect on Electrical Properties of ZnO- V<sub>2</sub> O<sub>5</sub>- MnO<sub>2</sub>- Nb<sub>2</sub> O<sub>5</sub> Varistor Ceramics.
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- Journal of the American Ceramic Society, 2011, v. 94, n. 10, p. 3227, doi. 10.1111/j.1551-2916.2011.04812.x
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Effect of the Size Distribution of Nanoscale Dispersed Particles on the Zener Drag Pressure.
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- Metallurgical & Materials Transactions. Part A, 2011, v. 42, n. 4, p. 1109, doi. 10.1007/s11661-010-0452-7
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The effect of different second-phase particle regimes on grain growth in two-phase aggregates: insights from in situ rock analogue experiments.
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- Contributions to Mineralogy & Petrology, 2010, v. 160, n. 2, p. 219, doi. 10.1007/s00410-009-0474-6
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Microwave Sintering of Multilayer Integrated Passive Devices.
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- Journal of the American Ceramic Society, 2010, v. 93, n. 8, p. 2274, doi. 10.1111/j.1551-2916.2010.03740.x
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- Article
Improved Simulation of Spice 2 Zener Diode Characteristics.
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- Journal of Active & Passive Electronic Devices, 2009, v. 4, n. 3, p. 265
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EXPLICARE SEMNIFICAŢIEI PERIOADEI DE INCUBAŢIE A TRANSFORMĂRII PERLITICE ŞI A MORFOLOGIEI UNOR STRUCTURI DIN OŢELURI PRINTR-UN MODEL SIMPLIFICAT DE TRANSFORMARE ALOTROPICĂ.
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- Metalurgia, 2008, v. 60, n. 12, p. 13
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AN OPTICALLY-TRIGGERED I-RTD HYBRID THz OSCILLATOR DESIGN.
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- International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 2, p. 339, doi. 10.1142/S0129156407004540
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Addressing a model of multistreamer switching in high-voltage silicon p-n junctions above the Zener breakdown threshold.
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- Technical Physics Letters, 2007, v. 33, n. 2, p. 180, doi. 10.1134/S1063785007020265
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ANALYSIS OF ESD PROTECTION NETWORKS FOR DMOS POWER TRANSISTORS BY MEANS OF STATIC AND TIME-RESOLVED EMISSION MICROSCOPY.
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- Quality & Reliability Engineering International, 1993, v. 9, n. 4, p. 315, doi. 10.1002/qre.4680090413
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- Article