Works matching DE "X-ray topography"

Results: 110

A Novel Approach for Analysis of Rocking Curve X-Ray Diffraction Imaging Data (RC-XRDI) on 4H-SiC Using Cumulative Integrated Intensity (CII) Method.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5075, doi. 10.1007/s11664-025-11963-y

By:

Estiri, Arash;
Bytheway, Richard;
Lafford, Tamzin Amanda;
Fox, Oliver James Louis;
Graham, Andrew;
Hurley, Claire;
Shah, Vishal Ajit

Publication type:

Article

Analysis of Dislocation Contrast in Grazing Incidence Synchrotron Monochromatic Beam X-ray Topographs of 4H-SiC Wafers in 224¯ 16 Reflection.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5066, doi. 10.1007/s11664-025-11918-3

By:

Chen, Zeyu;
Cheng, Qianyu;
Hu, Shanshan;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Analysis of Threading Edge Dislocation Low-Angle Grain Boundary Network Distributions in 4H-SiC Wafers Through Synchrotron X-ray Topography and Ray-Tracing Simulation.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5037, doi. 10.1007/s11664-025-11793-y

By:

Cheng, Qianyu;
Chen, Zeyu;
Hu, Shanshan;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Nucleation of Dislocations from Scratches on the Surface of PVT-Grown 4H-SiC Wafers.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5028, doi. 10.1007/s11664-025-11743-8

By:

Hu, Shanshan;
Chen, Zeyu;
Cheng, Qianyu;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Inspection of Bulk Crystals for Quality Control in Crystal Growth: Assessment of High-Energy X-Ray Transmission Topography and Back-Reflection Topography Pinpointed for Physical Vapor Transport-Grown Aluminum Nitride.

Published in:

Crystals (2073-4352), 2025, v. 15, n. 5, p. 449, doi. 10.3390/cryst15050449

By:

Weingärtner, Roland;
Epelbaum, Boris;
Lesnik, Andreas;
Lukin, Gleb;
Müller, Stephan;
Schiller, Leon;
Meissner, Elke;
Weisser, Matthias;
Besendörfer, Sven

Publication type:

Article

Frank Dislocations Generation and Behavior Investigation in PVT-Grown 4H-SiC Crystals.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4299, doi. 10.1007/s11664-024-11697-3

By:

Hu, Shanshan;
Chen, Zeyu;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

X-ray reflectivity and topography of the solvent-treated P3HT:PCBM thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 1, p. 182, doi. 10.1007/s10854-015-3735-3

By:

Khodakarimi, S.;
Hekmatshoar, M.;
Abbasi, F.

Publication type:

Article

André Authier (1932–2023).

Published in:

Acta Crystallographica. Section A, Foundations & Advances, 2023, v. 79, n. 4, p. 385, doi. 10.1107/S2053273323005120

By:

Epelboin, Yves

Publication type:

Article

Origin of irregular X‐ray mirage fringes from a bent, thin crystal.

Published in:

Acta Crystallographica. Section A, Foundations & Advances, 2022, v. 78, n. 5, p. 422, doi. 10.1107/S2053273322006143

By:

Fukamachi, Tomoe;
Kawamura, Takaaki

Publication type:

Article

X-ray crystal monochromator with the controllable rocking curve FWHM.

Published in:

Instruments & Experimental Techniques, 2015, v. 58, n. 2, p. 272, doi. 10.1134/S0020441215020232

By:

Markelov, A.;
Trushin, V.;
Chuprunov, E.

Publication type:

Article

Polymer nanocomposites containing β‐Bi2O3 and silica nanoparticles: Thermal stability, surface topography and X‐ray attenuation properties.

Published in:

Journal of Applied Polymer Science, 2020, v. 137, n. 36, p. 1, doi. 10.1002/app.49048

By:

Jayakumar, Sangeetha;
Saravanan, Thangavelu;
Philip, John

Publication type:

Article

Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 4, p. 1541, doi. 10.1007/s11664-021-09423-4

By:

Ishiji, Kotaro;
Kato, Masashi;
Sugie, Ryuichi

Publication type:

Article

Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 11, p. 6504, doi. 10.1007/s11664-021-09186-y

By:

Ota, Chiharu;
Nishio, Johji;
Okada, Aoi;
Iijima, Ryosuke

Publication type:

Article

Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 7, p. 4104, doi. 10.1007/s11664-021-08888-7

By:

Cheng, Qianyu;
Ailihumaer, Tuerxun;
Liu, Yafei;
Peng, Hongyu;
Chen, Zeyu;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3006, doi. 10.1007/s11664-021-08832-9

By:

Peng, Hongyu;
Ailihumaer, Tuerxun;
Liu, Yafei;
Kisslinger, Kim;
Tong, Xiao;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3258, doi. 10.1007/s11664-021-08827-6

By:

Ailihumaer, Tuerxun;
Peng, Hongyu;
Liu, Yafei;
Raghothamachar, Balaji;
Dudley, Michael;
Chung, Gilyong;
Manning, Ian;
Sanchez, Edward

Publication type:

Article

X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 2981, doi. 10.1007/s11664-021-08762-6

By:

Liu, Yafei;
Peng, Hongyu;
Ailihumaer, Tuerxun;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Vacancy Clustering in Dislocation-Free High-Purity Germanium.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5097, doi. 10.1007/s11664-020-08260-1

By:

Gradwohl, Kevin-Peter;
Gybin, Alexander;
Janicskó-Csáthy, József;
Roder, Melissa;
Danilewsky, Andreas N.;
Sumathi, R. Radhakrishnan

Publication type:

Article

Crystallinity Evaluation and Dislocation Observation for an Aluminum Nitride Single-Crystal Substrate on a Wafer Scale.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5144, doi. 10.1007/s11664-020-08016-x

By:

Yao, Yongzhao;
Sugawara, Yoshihiro;
Ishikawa, Yukari;
Okada, Narihito;
Tadatomo, Kazuyuki

Publication type:

Article

Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3472, doi. 10.1007/s11664-020-07981-7

By:

Peng, Hongyu;
Ailihumaer, Tuerxun;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3455, doi. 10.1007/s11664-019-07937-6

By:

Ailihumaer, Tuerxun;
Peng, Hongyu;
Raghothamachar, Balaji;
Dudley, Michael;
Chung, Gilyong;
Manning, Ian;
Sanchez, Edward

Publication type:

Article

Studies on Lattice Strain Variation due to Nitrogen Doping by Synchrotron X-ray Contour Mapping Technique in PVT-Grown 4H-SiC Crystals.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 5, p. 3363, doi. 10.1007/s11664-019-07077-x

By:

Ailihumaer, Tuerxun;
Yang, Yu;
Guo, Jianqiu;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Observation of Threading Dislocations in Ammonothermal Gallium Nitride Single Crystal Using Synchrotron X-ray Topography.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5007, doi. 10.1007/s11664-018-6252-3

By:

Yao, Y.;
Ishikawa, Y.;
Sugawara, Y.;
Takahashi, Y.;
Hirano, K.

Publication type:

Article

Study of Defect Structures in 6H-SiC a/ m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2078, doi. 10.1007/s11664-015-4185-7

By:

Goue, Ouloide;
Raghothamachar, Balaji;
Yang, Yu;
Guo, Jianqiu;
Dudley, Michael;
Kisslinger, Kim;
Trunek, Andrew;
Neudeck, Philip;
Spry, David;
Woodworth, Andrew

Publication type:

Article

Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2045, doi. 10.1007/s11664-015-4317-0

By:

Guo, Jianqiu;
Yang, Yu;
Wu, Fangzhen;
Sumakeris, Joe;
Leonard, Robert;
Goue, Ouloide;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2066, doi. 10.1007/s11664-016-4378-8

By:

Yang, Yu;
Guo, Jianqiu;
Goue, Ouloide;
Raghothamachar, Balaji;
Dudley, Michael;
Chung, Gil;
Sanchez, Edward;
Quast, Jeff;
Manning, Ian;
Hansen, Darren

Publication type:

Article

Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1268, doi. 10.1007/s11664-014-3497-3

By:

Wang, H.;
Dudley, M.;
Wu, F.;
Yang, Y.;
Raghothamachar, B.;
Zhang, J.;
Chung, G.;
Thomas, B.;
Sanchez, E.K.;
Mueller, S.G.;
Hansen, D.;
Loboda, M.J.

Publication type:

Article

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1293, doi. 10.1007/s11664-014-3536-0

By:

Wu, Fangzhen;
Wang, Huanhuan;
Raghothamachar, Balaji;
Dudley, Michael;
Chung, Gil;
Zhang, Jie;
Thomas, Bernd;
Sanchez, Edward;
Mueller, Stephan;
Hansen, Darren;
Loboda, Mark;
Zhang, Lihua;
Su, Dong;
Kisslinger, Kim;
Stach, Eric

Publication type:

Article

Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 4, p. 838, doi. 10.1007/s11664-013-2968-2

By:

Zhou, Tianyi;
Raghothamachar, Balaji;
Wu, Fangzhen;
Dalmau, Rafael;
Moody, Baxter;
Craft, Spalding;
Schlesser, Raoul;
Dudley, Michael;
Sitar, Zlatko

Publication type:

Article

Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 794, doi. 10.1007/s11664-013-2527-x

By:

Wang, Huanhuan;
Sun, Shun;
Dudley, Michael;
Byrappa, Shayan;
Wu, Fangzhen;
Raghothamachar, Balaji;
Chung, Gil;
Sanchez, Edward;
Mueller, Stephan;
Hansen, Darren;
Loboda, Mark

Publication type:

Article

Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 787, doi. 10.1007/s11664-012-2379-9

By:

Wu, Fangzhen;
Wang, Huanhuan;
Byrappa, Shayan;
Raghothamachar, Balaji;
Dudley, Michael;
Wu, Ping;
Xu, Xueping;
Zwieback, Ilya

Publication type:

Article

Polytype switching identification in 4H-SiC single crystal grown by PVT.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 19, p. 16343, doi. 10.1007/s10854-020-04184-y

By:

Arora, Aman;
Pandey, Akhilesh;
Patel, Ankit;
Dalal, Sandeep;
Yadav, Brajesh S.;
Goyal, Anshu;
Raman, R.;
Thakur, O. P.;
Tyagi, Renu

Publication type:

Article

Section Methods of X-Ray Diffraction Topography.

Published in:

Technical Physics, 2023, v. 68, n. 12, p. 778, doi. 10.1134/S1063784223080340

By:

Shul'pina, I. L.;
Suvorov, E. V.;
Smirnova, I. A.;
Argunova, T. S.

Publication type:

Article

Estimation of quality of GaAs substrates used for constructing semiconductor power devices.

Published in:

Technical Physics, 2014, v. 59, n. 10, p. 1566, doi. 10.1134/S1063784214100296

By:

Shul'pina, I.;
Ratnikov, V.;
Kozlov, V.;
Soldatenkov, F.;
Voitovich, V.

Publication type:

Article

Three-dimensional micro-X-ray topography using focused sheet-shaped X-ray beam.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-39347-4

By:

Yoneyama, Akio;
Ishiji, Kotaro;
Sakaki, Atsushi;
Kobayashi, Yutaka;
Inaba, Masayuki;
Fukuda, Kazunori;
Konishi, Kumiko;
Shima, Akio;
Takamatsu, Daiko

Publication type:

Article

Revelation of Dislocations in β‐Ga2O3 Substrates Grown by Edge‐Defined Film‐Fed Growth.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900630

By:

Yao, Yongzhao;
Ishikawa, Yukari;
Sugawara, Yoshihiro

Publication type:

Article

Revelation of Dislocations in β‐Ga2O3 Substrates Grown by Edge‐Defined Film‐Fed Growth.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900630

By:

Yao, Yongzhao;
Ishikawa, Yukari;
Sugawara, Yoshihiro

Publication type:

Article

Detection of sub-pixel fractures in X-ray dark-field tomography.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 121, n. 3, p. 1243, doi. 10.1007/s00339-015-9496-2

By:

Lauridsen, Torsten;
Willner, Marian;
Bech, Martin;
Pfeiffer, Franz;
Feidenhans'l, Robert

Publication type:

Article

On the generation of bulk microdefects in phosphorus-diffused monocrystalline silicon solar wafers after a high-thermal treatment studied by X-ray topography.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 116, n. 3, p. 1315, doi. 10.1007/s00339-014-8227-4

By:

González-Mañas, M.;
Vallejo, B.;
Caballero, M.

Publication type:

Article

Piezoelectric LaGaTaAlO crystal: growth, crystal structure perfection, piezoelectric, and acoustic properties.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 116, n. 3, p. 1477, doi. 10.1007/s00339-014-8267-9

By:

Roshchupkin, Dmitry;
Ortega, Luc;
Plotitcyna, Olga;
Irzhak, Dmitry;
Emelin, Evgenii;
Fahrtdinov, Rashid;
Alenkov, Vladimir;
Buzanov, Oleg

Publication type:

Article

Phase matching, X-Ray topography, optical and thermal analysis of L-alanine cadmium chloride monohydrate: a nonlinear optical material.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 114, n. 4, p. 1257, doi. 10.1007/s00339-013-7902-1

By:

Krishna, Anuj;
Vijayan, N.;
Riscob, B.;
Gour, B.;
Haranath, D.;
Philip, J.;
Verma, S.;
Jayalakshmy, M.;
Bhagavannarayana, G.;
Halder, S.

Publication type:

Article

X-ray topography study of monocrystalline silicon wafers diffused with phosphorus by different methods.

Published in:

Applied Physics A: Materials Science & Processing, 2013, v. 113, n. 2, p. 531, doi. 10.1007/s00339-013-7564-z

By:

Vallejo, B.;
González-Mañas, M.;
Caballero, M. A.

Publication type:

Article

X-ray topography study of monocrystalline silicon wafers diffused with phosphorus by different methods.

Published in:

Applied Physics A: Materials Science & Processing, 2013, v. 113, n. 2, p. 531, doi. 10.1007/s00339-013-7564-z

By:

Vallejo, B.;
González-Mañas, M.;
Caballero, M.

Publication type:

Article

In Memoriam Prof. Ronald Armstrong (May 4 1934–May 11 2023).

Published in:

Propellants, Explosives, Pyrotechnics, 2023, v. 48, n. 8, p. 1, doi. 10.1002/prep.202300183

By:

Cumming, Adam;
Elban, Wayne

Publication type:

Article

Contrasting of Biological Samples for X-Ray Synchrotron Microtomography.

Published in:

Bulletin of Experimental Biology & Medicine, 2013, v. 155, n. 4, p. 413, doi. 10.1007/s10517-013-2165-6

By:

Efimova, O.;
Khlebnikov, A.;
Senin, R.;
Voronin, P.;
Anokhin, K.

Publication type:

Article

Going Inside a Historical Brazilian Diamond from the Spada Collection (19th Century).

Published in:

Crystals (2073-4352), 2024, v. 14, n. 9, p. 779, doi. 10.3390/cryst14090779

By:

Agrosì, Giovanna;
Mele, Daniela;
Tempesta, Gioacchino

Publication type:

Article

Studies of Dislocations in Type Ib, Type IIa HPHT and CVD Single Crystal Diamonds.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 4, p. 657, doi. 10.3390/cryst13040657

By:

Misra, Devi Shanker

Publication type:

Article

Influence of Heat Treatment on Defect Structures in Single-Crystalline Blade Roots Studied by X-ray Topography and Positron Annihilation Lifetime Spectroscopy.

Published in:

Metallurgical & Materials Transactions. Part A, 2018, v. 49, n. 9, p. 4353, doi. 10.1007/s11661-018-4704-2

By:

Krawczyk, Jacek;
Bogdanowicz, Włodzimierz;
Hanc-Kuczkowska, Aneta;
Tondos, Anna;
Sieniawski, Jan

Publication type:

Article

Structural Perfection and Composition of Gallium-Doped Thermomigration Silicon Layers.

Published in:

Technical Physics Letters, 2020, v. 46, n. 3, p. 279, doi. 10.1134/S1063785020030268

By:

Lomov, A. A.;
Seredin, B. M.;
Martyushov, S. Yu.;
Zaichenko, A. N.;
Simakin, S. G.;
Shul'pina, I. L.

Publication type:

Article

Anisotropy of diffraction characteristics of thin pyrolytic graphite films.

Published in:

Technical Physics Letters, 2013, v. 39, n. 6, p. 573, doi. 10.1134/S1063785013060254

By:

Tur'yanskii, A.;
Gizha, S.;
Senkov, V.

Publication type:

Article