Works matching DE "VAPOR phase epitaxial growth"

Results: 179

Low‐strain, quantum‐cascade‐laser active regions grown on metamorphic buffer layers for emission in the 3.0–4.0 μm wavelength region.

Published in:

IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 25, doi. 10.1049/iet-opt.2013.0060

By:

Mawst, Luke J.;
Kirch, Jeremy D.;
Kim, TaeWan;
Garrod, Toby;
Boyle, Colin;
Botez, Dan;
Zutter, Brian;
Schulte, Kevin;
Kuech, Thomas F.;
Bouzi, Pierre M.;
Gmachl, Claire F.;
Earles, Thomas

Publication type:

Article

Methods and Devices for the Preparation of Standard Gas Mixtures.

Published in:

Journal of Analytical Chemistry, 2018, v. 73, n. 2, p. 109, doi. 10.1134/S1061934818020090

By:

Platonov, I. A.;
Rodinkov, O. V.;
Gorbacheva, A. R.;
Moskvin, L. N.;
Kolesnichenko, I. N.

Publication type:

Article

In-situ photoluminescence measurements during MOVPE of GaN and InGaN in a CCS reactor.

Published in:

Technisches Messen, 2017, v. 84, n. 11, p. 747, doi. 10.1515/teme-2017-0038

By:

Prall, Christoph;
Kaspari, Christian;
Knauer, Arne;
Haberland, Kolja;
Weyers, Markus;
Rueter, Dirk

Publication type:

Article

Numerical simulations of epitaxial growth in MOVPE reactor as a tool for aluminum nitride growth optimization.

Published in:

Journal of Power Technologies, 2016, v. 96, n. 2, p. 110

By:

Skibinski, Jakub;
Caban, Piotr;
Wejrzanowski, Tomasz;
Grybczuk, Mateusz;
Kurzydlowski, Krzysztof J.

Publication type:

Article

Growth and Characterization of Vertical and Lateral p‐n Junctions Formed by Selective‐Area p‐GaN MOVPE on Patterned Templates.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 2, p. N.PAG, doi. 10.1002/pssa.201800677

By:

Debald, Arne;
Kotzea, Simon;
Heuken, Michael;
Kalisch, Holger;
Vescan, Andrei

Publication type:

Article

Vertical‐Type Blue Light Emitting Diode by Mixed‐Source Hydride Vapor Phase Epitaxy Method.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 10, p. 1, doi. 10.1002/pssa.201700491

By:

Jeon, Injun;
Bae, Sung Geun;
Jeon, Hunsoo;
Kim, Kyoung Hwa;
Yang, Min;
Yi, Sam Nyung;
Ahn, Hyung Soo;
Yu, Young Moon;
Sawaki, Nobuhiko;
Kim, Suck‐Whan

Publication type:

Article

<italic>m</italic>‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle <italic>m</italic>‐Plane GaN Substrates.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 9, p. 1, doi. 10.1002/pssa.201700645

By:

Tanaka, Atsushi;
Ando, Yuto;
Nagamatsu, Kentaro;
Deki, Manato;
Cheong, Heajeong;
Ousmane, Barry;
Kushimoto, Maki;
Nitta, Shugo;
Honda, Yoshio;
Amano, Hiroshi

Publication type:

Article

Trench‐Confined InP‐Based Epitaxial Regrowth Using Metal‐Organic Vapor‐Phase Epitaxy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 8, p. 1, doi. 10.1002/pssa.201700454

By:

Reuterskiöld Hedlund, Carl;
Öberg, Olof;
Lim, Jang‐Kwon;
Wang, Qin;
Salter, Michael;
Hammar, Mattias

Publication type:

Article

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700190

By:

Rozhavskaya, Mariia M.;
Kukushkin, Sergey A.;
Osipov, Andrey V.;
Myasoedov, Alexandr V.;
Troshkov, Sergey I.;
Sorokin, Lev M.;
Brunkov, Pavel N.;
Baklanov, Alexandr V.;
Telyatnik, Rodion S.;
Juluri, Raghavendra R.;
Pedersen, Kjeld;
Popok, Vladimir N.

Publication type:

Article

Triangular-shaped sapphire patterning for HVPE grown AlGaN layers.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 9, p. n/a, doi. 10.1002/pssa.201600751

By:

Fleischmann, Simon;
Richter, Eberhard;
Mogilatenko, Anna;
Unger, Ralph‐Stephan;
Prasai, Deepak;
Weyers, Markus;
Tränkle, Günther

Publication type:

Article

Modified high temperature vapor phase epitaxy for growth of GaN films.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 9, p. n/a, doi. 10.1002/pssa.201600753

By:

Lukin, G.;
Schneider, T.;
Barchuk, M.;
Zimmermann, F.;
Niederschlag, E.;
Pätzold, O.;
Stelter, M.

Publication type:

Article

Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter-scale wide terraces.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 9, p. n/a, doi. 10.1002/pssa.201600754

By:

Iwabuchi, Takuya;
Kuboya, Shigeyuki;
Tanikawa, Tomoyuki;
Hanada, Takashi;
Katayama, Ryuji;
Fukuda, Tsuguo;
Matsuoka, Takashi

Publication type:

Article

Monolithic cyan − violet InGaN/GaN LED array.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600815

By:

Dróżdż, Piotr A.;
Sarzyński, Marcin;
Domagała, Jarosław Z.;
Grzanka, Ewa;
Grzanka, Szymon;
Czernecki, Robert;
Marona, Łucja;
Korona, Krzysztof P.;
Suski, Tadeusz

Publication type:

Article

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600829

By:

Tanaka, Atsushi;
Barry, Ousmane1;
Nagamatsu, Kentaro;
Matsushita, Junya;
Deki, Manato;
Ando, Yuto;
Kushimoto, Maki;
Nitta, Shugo;
Honda, Yoshio;
Amano, Hiroshi

Publication type:

Article

Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600419

By:

Frayssinet, Eric;
Leclaire, Paul;
Mohdad, Jad;
Latrach, Soumaya;
Chenot, Sébastien;
Nemoz, Maud;
Damilano, Benjamin;
Cordier, Yvon

Publication type:

Article

Epitaxial lateral overgrowth of Ga xIn1 − xP toward direct Ga xIn1 − xP/Si heterojunction.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600631

By:

Omanakuttan, Giriprasanth;
Stergiakis, Stamoulis;
Sahgal, Abhishek;
Sychugov, Ilya;
Lourdudoss, Sebastian;
Sun, Yan‐Ting

Publication type:

Article

Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600582

By:

Arikata, Suguru;
Kyono, Takashi;
Miura, Kouhei;
Balasekaran, Sundararajan;
Inada, Hiroshi;
Iguchi, Yasuhiro;
Sakai, Michito;
Katayama, Haruyoshi;
Kimata, Masafumi;
Akita, Katsushi

Publication type:

Article

Nanometer-thin ALD-Al2O3 for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 2, p. n/a, doi. 10.1002/pssa.201600727

By:

Banal, Ryan G.;
Imura, Masataka;
Tsuya, Daiju;
Iwai, Hideo;
Koide, Yasuo

Publication type:

Article

Vapor phase doping process for fabrication of rare earth doped optical fibers: Current status and future opportunities.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 6, p. 1377, doi. 10.1002/pssa.201532668

By:

Saha, Maitreyee;
Sen, Ranjan

Publication type:

Article

Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 1, p. 210, doi. 10.1002/pssa.201532479

By:

Kolbe, T.;
Stellmach, J.;
Mehnke, F.;
Rothe, M.‐A.;
Kueller, V.;
Knauer, A.;
Einfeldt, S.;
Wernicke, T.;
Weyers, M.;
Kneissl, M.

Publication type:

Article

Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 4, p. 851, doi. 10.1002/pssa.201431912

By:

Rozhavskaya, M. M.;
Lundin, W. V.;
Troshkov, S. I.;
Tsatsulnikov, A. F.;
Dubrovskii, V. G.

Publication type:

Article

Surface photovoltage behavior of GaN columns.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 4, p. 732, doi. 10.1002/pssa.201400238

By:

Deeb, Manal Ali;
Wei, Jiandong;
Hartmann, Jana;
Wehmann, Hergo‐Heinrich;
Waag, Andreas

Publication type:

Article

Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 1, p. 27, doi. 10.1002/pssa.201330092

By:

Wagner, Guenter;
Baldini, Michele;
Gogova, Daniela;
Schmidbauer, Martin;
Schewski, Robert;
Albrecht, Martin;
Galazka, Zbigniew;
Klimm, Detlef;
Fornari, Roberto

Publication type:

Article

A Review on Headspace Chromatography for Analysis of Volatile Oils.

Published in:

International Journal of Pharmacy & Life Sciences, 2014, v. 5, n. 5, p. 3558

By:

Upadhyay, Hardik;
Shah, Aarti A.;
Shah, Abhishek;
Sharma, Praveen;
Darwhekar, Gajanan

Publication type:

Article

Unassisted Water Splitting Using a GaSbxP(1−x) Photoanode.

Published in:

Advanced Energy Materials, 2018, v. 8, n. 16, p. 1, doi. 10.1002/aenm.201703247

By:

Martinez‐Garcia, Alejandro;
Russell, Harry B.;
Paxton, William;
Ravipati, Srikanth;
Calero‐Barney, Sonia;
Menon, Madhu;
Richter, Ernst;
Young, James;
Deutsch, Todd;
Sunkara, Mahendra K.

Publication type:

Article

Determination of diffusion and partition coefficients of model migrants by direct contact and vapour phase transfer from low-density polyethylene films into cake.

Published in:

Food Additives & Contaminants. Part A: Chemistry, Analysis, Control, Exposure & Risk Assessment, 2018, v. 35, n. 3, p. 555, doi. 10.1080/19440049.2017.1397294

By:

Paseiro-Cerrato, Rafael;
Rodríguez-Bernaldo de Quirós, Ana;
Otero-Pazos, Pablo;
Sendón, Raquel;
Paseiro-Losada, Perfecto

Publication type:

Article

Vapour-Phase and Solid-Phase Epitaxy of Silicon on Solid-Phase Crystallised Seed Layers for Solar Cells Application.

Published in:

International Journal of Photoenergy, 2014, p. 1, doi. 10.1155/2014/234602

By:

Wei Li;
Varlamov, Sergey;
Miga Jung;
Jialiang Huang

Publication type:

Article

Synthesis of Polymer Nanoparticles via Vapor Phase Deposition onto Liquid Substrates.

Published in:

Macromolecular Rapid Communications, 2014, v. 35, n. 23, p. 2000, doi. 10.1002/marc.201400436

By:

Haller, Patrick D.;
Gupta, Malancha

Publication type:

Article

The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiN interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 8, p. 6008, doi. 10.1007/s10854-016-6276-5

By:

Cui, Shuang;
Zhang, Yuantao;
Huang, Zhen;
Deng, Gaoqiang;
Li, Baozhu;
Chang, Yuchun;
Zhao, Degang

Publication type:

Article

Progress in bulk cadmium mercury telluride over the last 25 years.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4380, doi. 10.1007/s10854-015-2939-x

By:

Capper, P.

Publication type:

Article

Comprehension of Postmetallization Annealed MOCVD-TiO2 on (NH4)2S Treated III-V Semiconductors.

Published in:

Active & Passive Electronic Components, 2012, p. 1, doi. 10.1155/2012/148705

By:

Ming-Kwei Lee;
Chih-Feng Yen

Publication type:

Article

A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching.

Published in:

ISRN Condensed Matter Physics, 2012, p. 1, doi. 10.5402/2012/184023

By:

Ivantsov, Vladimir;
Volkova, Anna

Publication type:

Article

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage.

Published in:

Nanomaterials (2079-4991), 2018, v. 8, n. 12, p. 1039, doi. 10.3390/nano8121039

By:

Svrcek, Vladimir;
Kolenda, Marek;
Kadys, Arunas;
Reklaitis, Ignas;
Dobrovolskas, Darius;
Malinauskas, Tadas;
Lozach, Mickael;
Mariotti, Davide;
Strassburg, Martin;
Tomašiūnas, Roland

Publication type:

Article

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy.

Published in:

Nanomaterials (2079-4991), 2018, v. 8, n. 9, p. 704, doi. 10.3390/nano8090704

By:

Chi-Tsung Tasi;
Wei-Kai Wang;
Sin-Liang Ou;
Shih-Yung Huang;
Ray-Hua Horng;
Dong-Sing Wuu

Publication type:

Article

Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach.

Published in:

Coatings (2079-6412), 2017, v. 7, n. 9, p. 136, doi. 10.3390/coatings7090136

By:

Boichot, Raphaël;
Danying Chen;
Mercier, Frédéric;
Baillet, Francis;
Giusti, Gaël;
Coughlan, Thomas;
Chubarov, Mikhail;
Pons, Michel

Publication type:

Article

Decision risk approach to the application of biological indicators in vapor phased hydrogen peroxide bio‐decontamination.

Published in:

Journal of Chemometrics, 2018, v. 32, n. 4, p. 1, doi. 10.1002/cem.3015

By:

Pusztai, Éva;
Kemény, Sándor;
Vágó, Emese;
Horváth, Anikó

Publication type:

Article

Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1590, doi. 10.1134/S1063782618120163

By:

Maremyanin, K. V.;
Ikonnikov, A. V.;
Bovkun, L. S.;
Rumyantsev, V. V.;
Chizhevskii, E. G.;
Zasavitskii, I. I.;
Gavrilenko, V. I.

Publication type:

Article

Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1525, doi. 10.1134/S1063782618120096

By:

Gorshkov, A. P.;
Volkova, N. S.;
Pavlov, D. A.;
Usov, Yu. V.;
Istomin, L. A.;
Levichev, S. B.

Publication type:

Article

Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1412, doi. 10.1134/S106378261811026X

By:

Yunin, P. A.;
Drozdov, Yu. N.;
Khrykin, O. I.;
Grigoryev, V. A.

Publication type:

Article

Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 8, p. 1012, doi. 10.1134/S1063782618080195

By:

Seredin, P. V.;
Goloshchapov, D. L.;
Zolotukhin, D. S.;
Lenshin, A. S.;
Lukin, A. N.;
Khudyakov, Yu. Yu.;
Arsentyev, I. N.;
Zhabotinsky, A. V.;
Nikolaev, D. N.;
Pikhtin, N. A.

Publication type:

Article

Measurement of the D/H, 18O/16O, and 17O/16O Isotope Ratios in Water by Laser Absorption Spectroscopy at 2.73 µm.

Published in:

Sensors (14248220), 2014, v. 14, n. 5, p. 9027, doi. 10.3390/s140509027

By:

Tao Wu;
Weidong Chen;
Fertein, Eric;
Masselin, Pascal;
Xiaoming Gao;
Weijun Zhang;
Yingjian Wang;
Koeth, Johannes;
Brückner, Daniela;
Xingdao He

Publication type:

Article

Vapor Phase Selective Catalytic Oxidation of Cyclohexane over 13X Supported Metal Oxides in the Presence of Ozone.

Published in:

Ozone: Science & Engineering, 2016, v. 38, n. 6, p. 482, doi. 10.1080/01919512.2016.1215905

By:

Gopi, T.;
Swetha, G.;
Chandra Shekar, S.;
Soni, Keshav Chand;
Krishna, R.;
Ramakrishna, C.;
Saini, Bijendra

Publication type:

Article

Vapor Phase Fabrication of Hydrophilic and Hydrophobic Asymmetric Polymer Membranes.

Published in:

Macromolecular Materials & Engineering, 2016, v. 301, n. 9, p. 1037, doi. 10.1002/mame.201600124

By:

Dianat, Golnaz;
Seidel, Scott;
De Luna, Mark M.;
Gupta, Malancha

Publication type:

Article

Elucidation of novel mechanisms to produce value-added chemicals from vapour phase conversion of ferulic acid.

Published in:

Theoretical Chemistry Accounts: Theory, Computation, & Modeling, 2018, v. 137, n. 9, p. 1, doi. 10.1007/s00214-018-2311-3

By:

Verma, Anand Mohan;
Agrawal, Kushagra;
Kishore, Nanda

Publication type:

Article

CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation.

Published in:

Theoretical Chemistry Accounts: Theory, Computation, & Modeling, 2014, v. 133, n. 1, p. 1, doi. 10.1007/s00214-013-1419-8

By:

Boichot, R.;
Coudurier, N.;
Mercier, F.;
Claudel, A.;
Baccar, N.;
Milet, A.;
Blanquet, E.;
Pons, M.

Publication type:

Article

Contemporary Technology for Preparing Fiber-Reinforced Composite Materials with a Ceramic Refractory Matrix (Review).

Published in:

Refractories & Industrial Ceramics, 2017, v. 58, n. 2, p. 148, doi. 10.1007/s11148-017-0073-4

By:

Garshin, A.;
Kulik, V.;
Matveev, S.;
Nilov, A.

Publication type:

Article

Fire and Explosion Safe Technology of Storage and Regasification of Liquefied Petroleum Gas.

Published in:

Chemical & Petroleum Engineering, 2018, v. 54, n. 1/2, p. 38, doi. 10.1007/s10556-018-0435-x

By:

Shevtsov, S. A.;
Kargashilov, D. V.;
Shutkin, A. N.

Publication type:

Article

Assessment of Change in Torque of Stream-Bubble Contact Mass Transfer Devices.

Published in:

Chemical & Petroleum Engineering, 2015, v. 51, n. 5/6, p. 383, doi. 10.1007/s10556-015-0056-6

By:

Madyshev, I.;
Dmitrieva, O.;
Dmitriev, A.;
Nikolaev, A.

Publication type:

Article

Vapor phase epitaxy of CdTe on sapphire substrates in dependence on the vapor-flow orientation.

Published in:

Crystallography Reports, 2016, v. 61, n. 6, p. 1015, doi. 10.1134/S1063774516060080

By:

Muslimov, A.;
Butashin, A.;
Vlasov, V.;
Kanevsky, V.

Publication type:

Article

Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer.

Published in:

Crystallography Reports, 2015, v. 60, n. 6, p. 889, doi. 10.1134/S1063774515060036

By:

Belogorohov, I.;
Donskov, A.;
Knyazev, S.;
Kozlova, Yu.;
Pavlov, V.;
Yugova, T.

Publication type:

Article