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Cryo-EXLO Manipulation of FIB Specimens for Cryo-TEM.
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- Microscopy & Microanalysis, 2023, v. 29, n. 1, p. 145, doi. 10.1093/micmic/ozac029
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- Article
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga<sub>2</sub>O<sub>3</sub> Epitaxy and its Impact on the In‐Plane Electronic Conduction.
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- Advanced Functional Materials, 2023, v. 33, n. 2, p. 1, doi. 10.1002/adfm.202207821
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- Article
Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-87007-2
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- Article
Investigation of Indium Trihydride Molecule and Its Clusters Using Density Functional Theory for Semiconductor Application.
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- Acta Physica Polonica: A, 2021, v. 139, n. 1, p. 14, doi. 10.12693/APhysPolA.139.14
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- Article
Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-79154-9
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- Article
Highly Efficient Excitonic Recombination of Non-polar (112¯0) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-58887-7
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- Article
Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-52067-y
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- Article
Gallium arsenide solar cells grown at rates exceeding 300 µm h<sup>−1</sup> by hydride vapor phase epitaxy.
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- Nature Communications, 2019, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41467-019-11927-x
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- Article
Colored Sparks.
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- European Journal of Inorganic Chemistry, 2019, v. 2019, n. 7, p. 928, doi. 10.1002/ejic.201801300
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- Article
Growth and Characterization of Vertical and Lateral p‐n Junctions Formed by Selective‐Area p‐GaN MOVPE on Patterned Templates.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 2, p. N.PAG, doi. 10.1002/pssa.201800677
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Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source.
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- Journal of Electronic Materials, 2019, v. 48, n. 1, p. 454, doi. 10.1007/s11664-018-6728-1
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- Article
Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage.
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- Nanomaterials (2079-4991), 2018, v. 8, n. 12, p. 1039, doi. 10.3390/nano8121039
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- Article
MOVPE‐Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications.
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- Physica Status Solidi (B), 2018, v. 255, n. 12, p. N.PAG, doi. 10.1002/pssb.201800182
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- Article
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy.
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- Semiconductors, 2018, v. 52, n. 12, p. 1525, doi. 10.1134/S1063782618120096
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- Article
Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors.
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- Semiconductors, 2018, v. 52, n. 12, p. 1590, doi. 10.1134/S1063782618120163
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- Article
A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy.
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- Technical Physics Letters, 2018, v. 44, n. 12, p. 1127, doi. 10.1134/S1063785018120593
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- Article
Specific Features of the Luminescence of ZnO:Te/GaN/Al<sub>2</sub>O<sub>3</sub> Heterostructures.
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- Technical Physics Letters, 2018, v. 44, n. 12, p. 1142, doi. 10.1134/S1063785018120398
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- Article
Multijunction Ga<sub>0.5</sub>In<sub>0.5</sub>P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy.
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- Progress in Photovoltaics, 2018, v. 26, n. 11, p. 887, doi. 10.1002/pip.3027
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- Article
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire.
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- Semiconductors, 2018, v. 52, n. 11, p. 1412, doi. 10.1134/S106378261811026X
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Synthesis and techno-economic assessment of microbial-based processes for terpenes production.
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- Biotechnology for Biofuels, 2018, v. 11, n. 1, p. N.PAG, doi. 10.1186/s13068-018-1285-7
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- Article
Process intensification of distillation using a microwick technology to demonstrate separation of propane and propylene.
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- AIChE Journal, 2018, v. 64, n. 10, p. 3690, doi. 10.1002/aic.16325
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- Article
Asymmetry of the Defect Structure of Semipolar GaN Grown on Si(001).
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- Technical Physics Letters, 2018, v. 44, n. 10, p. 926, doi. 10.1134/S1063785018100267
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- Article
Insights into the Oxidant/Polymer Interfacial Growth of Vapor Phase Polymerized PEDOT Thin Films.
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- Advanced Materials Interfaces, 2018, v. 5, n. 18, p. N.PAG, doi. 10.1002/admi.201800594
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- Article
A Novel Scheme for Predicting the Behaviors of Liquid and Vapor Phases of Water Using the Ideal Gas Theory.
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- International Journal of Thermodynamics, 2018, v. 21, n. 3, p. 174, doi. 10.5541/ijot.448726
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- Article
Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy.
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- Nanomaterials (2079-4991), 2018, v. 8, n. 9, p. 704, doi. 10.3390/nano8090704
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- Article
Elucidation of novel mechanisms to produce value-added chemicals from vapour phase conversion of ferulic acid.
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- Theoretical Chemistry Accounts: Theory, Computation, & Modeling, 2018, v. 137, n. 9, p. 1, doi. 10.1007/s00214-018-2311-3
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Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure.
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- Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4277, doi. 10.1007/s11664-018-6190-0
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- Article
Reduction of Residual Impurities in Homoepitaxial m‐Plane GaN by Using N<sub>2</sub> Carrier Gas in Metalorganic Vapor Phase Epitaxy.
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- Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 8, p. 1, doi. 10.1002/pssr.201800124
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Reduction of Residual Impurities in Homoepitaxial m‐Plane GaN by Using N<sub>2</sub> Carrier Gas in Metalorganic Vapor Phase Epitaxy (Phys. Status Solidi RRL 8/2018).
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- Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 8, p. 1, doi. 10.1002/pssr.201800124
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- Article
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy.
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- Semiconductors, 2018, v. 52, n. 8, p. 1012, doi. 10.1134/S1063782618080195
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Studying the Pyroelectric Effect in AlN Epilayers.
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- Technical Physics Letters, 2018, v. 44, n. 8, p. 709, doi. 10.1134/S1063785018080199
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- Article
Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate.
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- Technical Physics Letters, 2018, v. 44, n. 8, p. 735, doi. 10.1134/S1063785018080175
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- Article
Modeling Resonances of Dielectric Spheres in the Terahertz Range.
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- Technical Physics Letters, 2018, v. 44, n. 8, p. 739, doi. 10.1134/S1063785018080291
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- Article
Efficient quantification of water content in edible oils by headspace gas chromatography with vapour phase calibration.
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- Journal of the Science of Food & Agriculture, 2018, v. 98, n. 8, p. 3208, doi. 10.1002/jsfa.8795
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- Article
Unassisted Water Splitting Using a GaSb<sub>x</sub>P<sub>(1−</sub><sub>x</sub><sub>)</sub> Photoanode.
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- Advanced Energy Materials, 2018, v. 8, n. 16, p. 1, doi. 10.1002/aenm.201703247
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- Article
Controlling the physical parameters of crystalline CIGS nanowires for use in superstrate configuration using vapor phase epitaxy.
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- Applied Nanoscience, 2018, v. 8, n. 5, p. 1043, doi. 10.1007/s13204-018-0724-x
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- Article
Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate.
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- Technical Physics Letters, 2018, v. 44, n. 6, p. 525, doi. 10.1134/S1063785018060172
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- Article
Vertical‐Type Blue Light Emitting Diode by Mixed‐Source Hydride Vapor Phase Epitaxy Method.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 10, p. 1, doi. 10.1002/pssa.201700491
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- Article
Fire and Explosion Safe Technology of Storage and Regasification of Liquefied Petroleum Gas.
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- Chemical & Petroleum Engineering, 2018, v. 54, n. 1/2, p. 38, doi. 10.1007/s10556-018-0435-x
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- Article
Growth of Bulk GaN from Gas Phase.
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- Crystal Research & Technology, 2018, v. 53, n. 5, p. 1, doi. 10.1002/crat.201700224
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- Article
Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700454
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- Article
<italic>m</italic>‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle <italic>m</italic>‐Plane GaN Substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 9, p. 1, doi. 10.1002/pssa.201700645
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- Article
Trench‐Confined InP‐Based Epitaxial Regrowth Using Metal‐Organic Vapor‐Phase Epitaxy.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 8, p. 1, doi. 10.1002/pssa.201700454
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- Article
Decision risk approach to the application of biological indicators in vapor phased hydrogen peroxide bio‐decontamination.
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- Journal of Chemometrics, 2018, v. 32, n. 4, p. 1, doi. 10.1002/cem.3015
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Methods and Devices for the Preparation of Standard Gas Mixtures.
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- Journal of Analytical Chemistry, 2018, v. 73, n. 2, p. 109, doi. 10.1134/S1061934818020090
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- Article
Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS.
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- Journal of Electronic Materials, 2018, v. 47, n. 2, p. 910, doi. 10.1007/s11664-017-5937-3
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- Article
Numerical Analysis of the Influence of Low Frequency Vibration on Bubble Growth.
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- International Journal of Transport Phenomena, 2018, v. 15, n. 1, p. 37
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Numerical Investigation on Air Mixer Performance for a Closed Loop Indoor Unit Test.
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- International Journal of Transport Phenomena, 2018, v. 15, n. 1, p. 53
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- Article
Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate.
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- Technical Physics Letters, 2018, v. 44, n. 1, p. 81, doi. 10.1134/S106378501801011X
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- Article
Study of the Structural Properties of Silicon-on-Sapphire Layers in Hydride-Chloride Vapor-Phase Epitaxy.
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- Semiconductors, 2017, v. 51, n. 13, p. 1692, doi. 10.1134/S1063782617130127
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- Article