Works matching DE "VAPOR phase epitaxial growth"

Results: 179

The effects of frozen tissue storage conditions on the integrity of RNA and protein.

Published in:

Biotechnic & Histochemistry, 2014, v. 89, n. 7, p. 518, doi. 10.3109/10520295.2014.904927

By:

Auer, H;
Mobley, JA;
Ayers, LW;
Bowen, J;
Chuaqui, RF;
Johnson, LA;
Livolsi, VA;
Lubensky, IA;
McGarvey, D;
Monovich, LC;
Moskaluk, CA;
Rumpel, CA;
Sexton, KC;
Washington, MK;
Wiles, KR;
Grizzle, WE;
Ramirez, NC

Publication type:

Article

Synthesis of Polymer Nanoparticles via Vapor Phase Deposition onto Liquid Substrates.

Published in:

Macromolecular Rapid Communications, 2014, v. 35, n. 23, p. 2000, doi. 10.1002/marc.201400436

By:

Haller, Patrick D.;
Gupta, Malancha

Publication type:

Article

The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiN interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 8, p. 6008, doi. 10.1007/s10854-016-6276-5

By:

Cui, Shuang;
Zhang, Yuantao;
Huang, Zhen;
Deng, Gaoqiang;
Li, Baozhu;
Chang, Yuchun;
Zhao, Degang

Publication type:

Article

Progress in bulk cadmium mercury telluride over the last 25 years.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4380, doi. 10.1007/s10854-015-2939-x

By:

Capper, P.

Publication type:

Article

A model for calculating the composition of GaAsP solid solutions under metalorganic vapor phase epitaxy conditions.

Published in:

Inorganic Materials, 2017, v. 53, n. 4, p. 369, doi. 10.1134/S0020168517040124

By:

Maksimov, A.;
Eistrikh-Geller, V.;
Marmalyuk, A.;
Ladugin, M.;
Bagaev, T.;
Gorlachuk, P.;
Yarotskaya, I.

Publication type:

Article

Growth and properties of Cu- and Ag-Doped PbI crystals.

Published in:

Inorganic Materials, 2014, v. 50, n. 2, p. 205, doi. 10.1134/S0020168514020149

By:

Rybak, O.

Publication type:

Article

Direct Vapor Phase Growth and Optoelectronic Application of Large Band Offset SnS2/MoS2 Vertical Bilayer Heterostructures with High Lattice Mismatch.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 11, p. 1, doi. 10.1002/aelm.201600298

By:

Li, Bo;
Huang, Le;
Zhong, Mianzeng;
Li, Yan;
Wang, Yan;
Li, Jingbo;
Wei, Zhongming

Publication type:

Article

Prediction of departure from nucleate boiling in a mini channel using CFD.

Published in:

Modares Mechanical Engineering, 2015, v. 15, n. 3, p. 303

By:

Rabiee, Ataollah;
Atf, Alireza

Publication type:

Article

Controlling the physical parameters of crystalline CIGS nanowires for use in superstrate configuration using vapor phase epitaxy.

Published in:

Applied Nanoscience, 2018, v. 8, n. 5, p. 1043, doi. 10.1007/s13204-018-0724-x

By:

Lee, Dongjin;
Jeon, H. C.;
Kang, T. W.;
Kumar, Sunil

Publication type:

Article

Reduction of Residual Impurities in Homoepitaxial m‐Plane GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy (Phys. Status Solidi RRL 8/2018).

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 8, p. 1, doi. 10.1002/pssr.201800124

By:

Barry, Ousmane I.;
Lekhal, Kaddour;
Bae, Si‐Young;
Lee, Ho‐Jun;
Pristovsek, Markus;
Honda, Yoshio;
Amano, Hiroshi

Publication type:

Article

Reduction of Residual Impurities in Homoepitaxial m‐Plane GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 8, p. 1, doi. 10.1002/pssr.201800124

By:

Barry, Ousmane I.;
Lekhal, Kaddour;
Bae, Si‐Young;
Lee, Ho‐Jun;
Pristovsek, Markus;
Honda, Yoshio;
Amano, Hiroshi

Publication type:

Article

Realization of single and double axial InSb-GaSb heterostructure nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 3, p. 269, doi. 10.1002/pssr.201308331

By:

Ghalamestani, Sepideh Gorji;
Ek, Martin;
Dick, Kimberly A.

Publication type:

Article

Tellurium delta-doped InGaP layers grown by metalorganic vapour phase epitaxy.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 6, p. 443, doi. 10.1002/pssr.201307116

By:

Kúdela, Róbert;
Šoltýs, Ján;
Vincze, Andrej;
Novák, Jozef

Publication type:

Article

Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications.

Published in:

Optica Applicata, 2016, v. 46, n. 2, p. 241, doi. 10.5277/oa160208

By:

BADURA, MIKOŁAJ;
BIELAK, KATARZYNA;
ŚCIANA, BEATA;
RADZIEWICZ, DAMIAN;
PUCICKI, DAMIAN;
DAWIDOWSKI, WOJCIECH;
ŻELAZNA, KAROLINA;
KUDRAWIEC, ROBERT;
TŁACZAŁA, MAREK

Publication type:

Article

Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs-based quantum wells heterostructures.

Published in:

Optica Applicata, 2016, v. 46, n. 2, p. 255, doi. 10.5277/oa160210

By:

PUCICKI, DAMIAN;
BIELAK, KATARZYNA;
DAWIDOWSKI, WOJCIECH;
ŚCIANA, BEATA;
TŁACZAŁA, MAREK

Publication type:

Article

Gallium oxide buffer layers for gallium nitride epitaxy.

Published in:

Optica Applicata, 2013, v. 43, n. 1, p. 73, doi. 10.5277/oa130110

By:

KORBUTOWICZ, RYSZARD;
WNĘK, JAN;
PANACHIDA, PAWEL;
SERAFIŃCZUK, JAROSŁAW;
SRNANEK, RUDOLF

Publication type:

Article

Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1590, doi. 10.1134/S1063782618120163

By:

Maremyanin, K. V.;
Ikonnikov, A. V.;
Bovkun, L. S.;
Rumyantsev, V. V.;
Chizhevskii, E. G.;
Zasavitskii, I. I.;
Gavrilenko, V. I.

Publication type:

Article

Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1525, doi. 10.1134/S1063782618120096

By:

Gorshkov, A. P.;
Volkova, N. S.;
Pavlov, D. A.;
Usov, Yu. V.;
Istomin, L. A.;
Levichev, S. B.

Publication type:

Article

Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1412, doi. 10.1134/S106378261811026X

By:

Yunin, P. A.;
Drozdov, Yu. N.;
Khrykin, O. I.;
Grigoryev, V. A.

Publication type:

Article

Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 8, p. 1012, doi. 10.1134/S1063782618080195

By:

Seredin, P. V.;
Goloshchapov, D. L.;
Zolotukhin, D. S.;
Lenshin, A. S.;
Lukin, A. N.;
Khudyakov, Yu. Yu.;
Arsentyev, I. N.;
Zhabotinsky, A. V.;
Nikolaev, D. N.;
Pikhtin, N. A.

Publication type:

Article

Study of the Structural Properties of Silicon-on-Sapphire Layers in Hydride-Chloride Vapor-Phase Epitaxy.

Published in:

Semiconductors, 2017, v. 51, n. 13, p. 1692, doi. 10.1134/S1063782617130127

By:

Sokolov, E. M.;
Fedotov, S. D.;
Statsenko, V. N.;
Timoshenkov, S. P.;
Emelyanov, A. V.

Publication type:

Article

Improving the functional characteristics of gallium nitride during vapor phase epitaxy.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1697, doi. 10.1134/S1063782616130108

By:

Vigdorovich, E.

Publication type:

Article

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1439, doi. 10.1134/S1063782616110075

By:

Daniltsev, V.;
Demidov, E.;
Drozdov, M.;
Drozdov, Yu.;
Kraev, S.;
Surovegina, E.;
Shashkin, V.;
Yunin, P.

Publication type:

Article

On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy.

Published in:

Semiconductors, 2016, v. 50, n. 4, p. 541, doi. 10.1134/S1063782616040217

By:

Sharofidinov, Sh.;
Nikolaev, V.;
Smirnov, A.;
Chikiryaka, A.;
Nikitina, I.;
Odnoblyudov, M.;
Bugrov, V.;
Romanov, A.

Publication type:

Article

Radiation hardness of n-GaN schottky diodes.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1341, doi. 10.1134/S1063782615100127

By:

Lebedev, A.;
Belov, S.;
Mynbaeva, M.;
Strel'chuk, A.;
Bogdanova, E.;
Makarov, Yu.;
Usikov, A.;
Kurin, S.;
Barash, I.;
Roenkov, A.;
Kozlovski, V.

Publication type:

Article

Hall effect in CdTe crystals doped with Sn from the vapor phase.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1432, doi. 10.1134/S1063782614110153

By:

Makhniy, V.;
German, I.;
Parfenyuk, O.

Publication type:

Article

Semiconductor behavior of nanocrystalline carbon.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 649, doi. 10.1134/S1063782614050042

By:

Brantov, S.

Publication type:

Article

Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 245, doi. 10.1134/S1063782614020262

By:

Solomonov, A.;
Tarasov, S.;
Men'kovich, E.;
Lamkin, I.;
Kurin, S.;
Antipov, A.;
Barash, I.;
Roenkov, A.;
Helava, H.;
Makarov, Yu.

Publication type:

Article

Prediction of natural gas hydrate inhibitor vaporization rate using particle swarm optimization approach.

Published in:

Energy Sources Part A: Recovery, Utilization & Environmental Effects, 2016, v. 38, n. 12, p. 1706, doi. 10.1080/15567036.2014.975298

By:

Ahmadi, M. A.;
Soleimani, R.;
Bahadori, A.

Publication type:

Article

Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 1, p. 454, doi. 10.1007/s11664-018-6728-1

By:

Iso, Kenji;
Gokudan, Yuya;
Shiraishi, Masumi;
Nishikado, Minae;
Murakami, Hisashi;
Koukitu, Akinori

Publication type:

Article

Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4277, doi. 10.1007/s11664-018-6190-0

By:

Concepción, O.;
Escobosa, A.;
de Melo, O.

Publication type:

Article

Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 2, p. 910, doi. 10.1007/s11664-017-5937-3

By:

Marx, M.;
Grundmann, A.;
Lin, Y.-R.;
Andrzejewski, D.;
Kümmell, T.;
Bacher, G.;
Heuken, M.;
Kalisch, H.;
Vescan, A.

Publication type:

Article

Effect of the Ammonia Flow on the Formation of Microstructure Defects in GaN Layers Grown by High-Temperature Vapor Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 3, p. 1612, doi. 10.1007/s11664-016-5204-z

By:

Barchuk, M.;
Lukin, G.;
Zimmermann, F.;
Röder, C.;
Motylenko, M.;
Pätzold, O.;
Heitmann, J.;
Kortus, J.;
Rafaja, D.

Publication type:

Article

Fabrication of GaN Microporous Structure at a GaN/Sapphire Interface as the Template for Thick-Film GaN Separation Grown by HVPE.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 10, p. 4782, doi. 10.1007/s11664-016-4726-8

By:

Chen, Jianli;
Cheng, Hongjuan;
Zhang, Song;
Lan, Feifei;
Qi, Chengjun;
Xu, Yongkuan;
Wang, Zaien;
Li, Jing;
Lai, Zhanping

Publication type:

Article

Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2178, doi. 10.1007/s11664-015-4305-4

By:

Reshchikov, M.;
Usikov, A.;
Helava, H.;
Makarov, Yu.;
Puzyk, M.;
Papchenko, B.

Publication type:

Article

AlGaN/AlN-GaN-SL HEMTs with Multiple 2DEG Channels.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1263, doi. 10.1007/s11664-014-3474-x

By:

Wille, Ada;
Yacoub, Hady;
Debald, Arne;
Kalisch, Holger;
Vescan, Andrei

Publication type:

Article

Defect-Related Luminescence in Undoped GaN Grown by HVPE.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1281, doi. 10.1007/s11664-014-3540-4

By:

Reshchikov, M.A.;
Usikov, A.;
Helava, H.;
Makarov, Yu.

Publication type:

Article

Strain Distribution Across HVPE GaN Layer Grown on Large Square-Patterned Template Studied by Micro-Raman Scattering.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 7, p. 2715, doi. 10.1007/s11664-014-3225-z

By:

Sui, Yanping;
Wang, Bin;
Zhao, Zhide;
Xu, Wei;
Li, Xiaoliang;
Yu, Guanghui;
Wang, Xinzhong

Publication type:

Article

Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 3, p. 786, doi. 10.1007/s11664-013-2920-5

By:

Zhao, Z.;
Wang, B.;
Sui, Y.;
Xu, W.;
Li, X.;
Yu, G.

Publication type:

Article

Si Doping of GaN in Hydride Vapor-Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 820, doi. 10.1007/s11664-012-2373-2

By:

Richter, E.;
Stoica, T.;
Zeimer, U.;
Netzel, C.;
Weyers, M.;
Tränkle, G.

Publication type:

Article

Vapor Phase Metal-Assisted Chemical Etching of Silicon.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 24, p. 3827, doi. 10.1002/adfm.201304129

By:

Hildreth, Owen J.;
Schmidt, Daniel R.

Publication type:

Article

Shape Control of Mn3O4 Nanoparticles on Nitrogen-Doped Graphene for Enhanced Oxygen Reduction Activity.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 14, p. 2072, doi. 10.1002/adfm.201302940

By:

Duan, Jingjing;
Chen, Sheng;
Dai, Sheng;
Qiao, Shi Zhang

Publication type:

Article

Phase transformations during the growth of paracetamol crystals from the vapor phase.

Published in:

Technical Physics, 2014, v. 59, n. 7, p. 1101, doi. 10.1134/S1063784214070056

By:

Belyaev, A.;
Rubets, V.;
Antipov, V.;
Bordei, N.

Publication type:

Article

Spectral-splitting concentrator photovoltaic modules based on AlGaAs/GaAs/GaSb and GaInP/InGaAs(P) solar cells.

Published in:

Technical Physics, 2013, v. 58, n. 7, p. 1034, doi. 10.1134/S106378421307027X

By:

Vlasov, A.;
Khvostikov, V.;
Karlina, L.;
Sorokina, S.;
Potapovich, N.;
Shvarts, M.;
Timoshina, N.;
Lantratov, V.;
Mintairov, S.;
Kalyuzhnyi, N.;
Marukhina, E.;
Andreev, V.

Publication type:

Article

Methods and Devices for the Preparation of Standard Gas Mixtures.

Published in:

Journal of Analytical Chemistry, 2018, v. 73, n. 2, p. 109, doi. 10.1134/S1061934818020090

By:

Platonov, I. A.;
Rodinkov, O. V.;
Gorbacheva, A. R.;
Moskvin, L. N.;
Kolesnichenko, I. N.

Publication type:

Article

Nucleation and growth of Ag nanoparticles on amorphous carbon surface from vapor phase formed by vacuum evaporation.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 118, n. 4, p. 1297, doi. 10.1007/s00339-014-8834-0

By:

Gromov, Dmitry;
Pavlova, Lydia;
Savitsky, Andrey;
Trifonov, Alexey

Publication type:

Article

Defect-mediated ferromagnetism in ZnO:Mn nanorods.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 115, n. 1, p. 313, doi. 10.1007/s00339-013-7817-x

By:

Yılmaz, S.;
McGlynn, E.;
Bacaksız, E.;
Bogan, J.

Publication type:

Article

A Review on Headspace Chromatography for Analysis of Volatile Oils.

Published in:

International Journal of Pharmacy & Life Sciences, 2014, v. 5, n. 5, p. 3558

By:

Upadhyay, Hardik;
Shah, Aarti A.;
Shah, Abhishek;
Sharma, Praveen;
Darwhekar, Gajanan

Publication type:

Article

Design of minimum order equiripple programmable band pass filter for transreceiver circuits.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 15, p. 1316, doi. 10.1049/el.2016.1043

By:

Mehra, P.;
Shiwani, S.;
Hemrajani, N.;
Gupta, R. P.

Publication type:

Article

Static properties of planar Mach-Zehnder optical modulator on (110) InP substrate.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 14, p. 1, doi. 10.1049/el.2013.1659

By:

Y. Ogiso;
M. Arai;
T. Sato;
Y. Shibata;
M. Kohtoku

Publication type:

Article