Works about TWO-dimensional electron gas

Results: 443

Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 7, p. 1, doi. 10.1002/aelm.202400650

By:

Kim, Jiho;
Kwon, Ohhyuk;
Seo, Jongseon;
Hwang, Hyunsang

Publication type:

Article

Development of a Nb‐Based Semiconductor‐Superconductor Hybrid 2DEG Platform.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 7, p. 1, doi. 10.1002/aelm.202400687

By:

Telkamp, Sjoerd;
Antonelli, Tommaso;
Todt, Clemens;
Hinderling, Manuel;
Coraiola, Marco;
Haxell, Daniel;
Kate, Sofieke C. ten;
Sabonis, Deividas;
Zeng, Peng;
Schott, Rüdiger;
Cheah, Erik;
Reichl, Christian;
Nichele, Fabrizio;
Krizek, Filip;
Wegscheider, Werner

Publication type:

Article

Performance Enhancement of AlGaN/GaN HEMT by Optimization of Device Parameters Considering Nanometer Barrier Layer Thickness.

Published in:

International Journal of Nanoscience, 2020, v. 19, n. 6, p. N.PAG, doi. 10.1142/S0219581X20500118

By:

Verma, Yogesh Kumar;
Mishra, Varun;
Gupta, Santosh Kumar

Publication type:

Article

Magneto‐Optical Properties of Electron Gas in a Chain of Planar Quantum Rings: Effect of Screening on the Signature of Quantum Phase Interference.

Published in:

Annalen der Physik, 2025, v. 537, n. 4, p. 1, doi. 10.1002/andp.202400337

By:

Harutyunyan, Armen;
Mughnetsyan, Vram;
Kirakosyan, Albert;
Gudmundsson, Vidar

Publication type:

Article

Magnetic Properties of A Cavity‐Embedded Square Lattice of Quantum Dots or Antidots.

Published in:

Annalen der Physik, 2024, v. 536, n. 4, p. 1, doi. 10.1002/andp.202300274

By:

Mughnetsyan, Vram;
Gudmundsson, Vidar;
Abdullah, Nzar Rauf;
Tang, Chi‐Shung;
Moldoveanu, Valeriu;
Manolescu, Andrei

Publication type:

Article

Strain‐Gradient‐Induced Modulation of Carrier Density and Mobility at the LaAlO3/SrTiO3 Heterointerface.

Published in:

Annalen der Physik, 2020, v. 532, n. 7, p. 1, doi. 10.1002/andp.202000155

By:

Zhang, Zhe;
Jiang, Weimin;
Liu, Kejian;
Liu, Mingrui;
Meng, Jianchao;
Wu, Lingyan;
Shao, Tingna;
Ling, Jingzhuo;
Yao, Chunli;
Xiong, Changmin;
Dou, Ruifen;
Nie, Jiacai

Publication type:

Article

Surface Polarity Dynamics in Oxygen-Deintercalated Nickelate Thin Films.

Published in:

Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.1065

By:

Yang, Chao;
Pons, Rebecca;
Sigle, Wilfried;
Wang, Hongguang;
Benckiser, Eva;
Logvenov, Gennady;
Keimer, Bernhard;
Aken, Peter A van

Publication type:

Article

New Directions Toward Nanophysics Experiments in STEM.

Published in:

Microscopy & Microanalysis, 2019, p. 434, doi. 10.1017/S1431927618002660

By:

Kociak, Mathieu;
Blazit, Jean-Denis;
Bocher, Laura;
Brun, Nathalie;
Colliex, Christian;
de Frutos, Marta;
Gloter, Alexandre;
Li, Xiaoyan;
Tencé, Marcel;
Tizei, Luiz H. G.;
Walls, Michael;
Zobelli, Alberto;
Stéphan, Odile

Publication type:

Article

Direct Imaging of Electron Transfer and Its Influence on Superconducting Pairing at FeSe/SrTiO3 Interface.

Published in:

Microscopy & Microanalysis, 2019, p. 82, doi. 10.1017/S1431927618000909

By:

Wu, Lijun;
Li, Mingda;
Zhao, W.;
Chang, C-Z.;
Moodera, J. S.;
Chan, M.H.W.;
Zhu, Yimei

Publication type:

Article

Mid-infrared Photodetection Using Cyclotron Resonance in Graphene/h-BN van der Waals Heterostructures.

Published in:

Sensors & Materials, 2019, v. 31, n. 7, Part 2, p. 2281, doi. 10.18494/SAM.2019.2445

By:

Momoko Onodera;
Kei Kinoshita;
Rai Moriya;
Satoru Masubuchi;
Kenji Watanabe;
Takashi Taniguchi;
Tomoki Machida

Publication type:

Article

Weak-Light-Enhanced AlGaN/GaN UV Phototransistors with a Buried p-GaN Structure.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 2076, doi. 10.3390/electronics14102076

By:

Wang, Haiping;
Zhang, Feiyu;
Zhao, Xuzhi;
You, Haifan;
Ma, Zhan;
Ye, Jiandong;
Lu, Hai;
Zhang, Rong;
Zheng, Youdou;
Chen, Dunjun

Publication type:

Article

TCAD-Based Analysis on the Impact of AlN Interlayer in Normally-off AlGaN/GaN MISHEMTs with Buried p-Region.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 2, p. 313, doi. 10.3390/electronics14020313

By:

Hamady, Saleem;
Beydoun, Bilal;
Morancho, Frédéric

Publication type:

Article

Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 5, p. 1087, doi. 10.3390/electronics12051087

By:

An, Yuan;
Ren, Kailin;
Yin, Luqiao;
Zhang, Jianhua

Publication type:

Article

Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 4, p. 1049, doi. 10.3390/electronics12041049

By:

Pharkphoumy, Sakhone;
Janardhanam, Vallivedu;
Jang, Tae-Hoon;
Shim, Kyu-Hwan;
Choi, Chel-Jong

Publication type:

Article

Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 9, p. N.PAG, doi. 10.3390/electronics11091331

By:

Li, Yuchen;
Huang, Sen;
Wang, Xinhua;
Jiang, Qimeng;
Liu, Xinyu

Publication type:

Article

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y 21 Frequency Dispersion Properties.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 24, p. 3096, doi. 10.3390/electronics10243096

By:

Raja, P. Vigneshwara;
Subramani, Nandha Kumar;
Gaillard, Florent;
Bouslama, Mohamed;
Sommet, Raphaël;
Nallatamby, Jean-Christophe

Publication type:

Article

The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 1, p. 46, doi. 10.3390/electronics10010046

By:

Huang, Chong-Rong;
Liu, Chia-Hao;
Wang, Hsiang-Chun;
Kao, Hsuan-Ling;
Chiu, Hsien-Chin;
Chen, Chih-Tien;
Chang, Kuo-Jen

Publication type:

Article

Optimization of the Sensitivity of a Double-Dot Magnetic Detector.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 7, p. 1134, doi. 10.3390/electronics9071134

By:

Macucci, Massimo;
Marconcini, Paolo;
Roche, Stephan

Publication type:

Article

Levy-Lieb-Based Monte Carlo Study of the Dimensionality Behaviour of the Electronic Kinetic Functional.

Published in:

Computation, 2017, v. 5, n. 2, p. 30, doi. 10.3390/computation5020030

By:

Seshaditya, A.;
Ghiringhelli, Luca M.;
Site, Luigi Delle

Publication type:

Article

Effects of surface defects on two-dimensional electron gas at NdAlO3/SrTiO3 interface.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep05477

By:

Xiang, X.;
Qiao, L.;
Xiao, H. Y.;
Gao, F.;
Zu, X. T.;
Li, S.;
Zhou, W. L.

Publication type:

Article

Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT.

Published in:

Journal of Nano- & Electronic Physics, 2021, v. 13, n. 4, p. 40007-1, doi. 10.21272/jnep.13(4).04007

By:

Sandeep, V.;
Charles Pravin, J.

Publication type:

Article

Comprehensive Analytical Modeling of AlGaN/GaN based Heterostructure Gas Sensor.

Published in:

Journal of Nano- & Electronic Physics, 2021, v. 13, n. 3, p. 03010-1, doi. 10.21272/jnep.13(3).03010

By:

Roy, Bhaskar;
Dutta, Ritam;
Billaha, Md. Aref;
Basak, Soumya

Publication type:

Article

Density of Surface States in 3D Topological Insulators in the Presence of Magnetic Field with Hexagonal Warping Effect.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 5, p. 1, doi. 10.21272/jnep.11(5).05014

By:

Fedulov, I. N.

Publication type:

Article

K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm−1 Extrinsic Transconductance.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 3, p. 1, doi. 10.1002/pssa.202400592

By:

Yazdani, Hossein;
Beleniotis, Petros;
Brunner, Frank;
Ostermay, Ina;
Würfl, Joachim;
Rudolph, Matthias;
Heinrich, Wolfgang;
Hilt, Oliver

Publication type:

Article

Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400060

By:

Zazuli, Aina Hiyama;
Kowaki, Taketo;
Miyamoto, Minagi;
Hanasaku, Koki;
Inahara, Daisuke;
Fujii, Kai;
Kurai, Satoshi;
Okada, Narihito;
Yamada, Yoichi

Publication type:

Article

Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 18, p. 1, doi. 10.1002/pssa.202400479

By:

Mao, Ling‐Feng

Publication type:

Article

Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 14, p. 1, doi. 10.1002/pssa.202400239

By:

Li, Ang;
Wang, Chong;
He, Yunlong;
Zhang, Wentao;
Zheng, Xuefeng;
Ma, Xiaohua;
Liu, Kai;
Hao, Yue

Publication type:

Article

Active Terahertz Metamaterials Integrated with Metal–Semiconductor–Metal Varactor Diodes for Amplitude Modulation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300655

By:

Lee, Gyejung;
Hwang, Ji Hyun;
Jang, Jae‐Hyung

Publication type:

Article

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 10, p. 1, doi. 10.1002/pssa.202400024

By:

Cai, Jing;
Yao, Ruo‐He;
Geng, Kui‐Wei

Publication type:

Article

Asymmetric Gate and SiC Substrate Grooved InGaN Back‐Barrier AlGaN/GaN HEMTs for High‐Power RF Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 5, p. 1, doi. 10.1002/pssa.202300708

By:

Parvez, Bazila;
Sahu, Jyoti;
Basak, Subhajit;
Patil, Mahalaxmi;
Sahu, Arpit;
Garg, Gaurav;
Ganguly, Swaroop;
Saha, Dipankar

Publication type:

Article

Effect of SiO2 Surface Passivation on the Performance of GaN Polarization Superjunction Heterojunction Field Effect Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 4, p. 1, doi. 10.1002/pssa.202300199

By:

Du, Yangming;
Madathil, Sankara Narayanan Ekkanath;
Kawai, Hiroji;
Yagi, Shuichi;
Narui, Hironobu

Publication type:

Article

Effect of High Al Content AlGaN Buffer Layer on the Properties of GaN‐on‐Silicon Materials.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 2, p. 1, doi. 10.1002/pssa.202300757

By:

Liu, YuQi;
Wang, Kai;
Nie, Zuorong;
Wang, Hong

Publication type:

Article

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel AlxGa1−xN/GaN/AlyGa1−yN/GaN High‐Electron‐Mobility Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 23, p. 1, doi. 10.1002/pssa.202300413

By:

Cai, Jing;
Yao, Ruo-He;
Liu, Yu-Rong;
Geng, Kui-Wei

Publication type:

Article

Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 18, p. 1, doi. 10.1002/pssa.202100078

By:

Paszkiewicz, Bartłomiej Kazimierz;
Paszkiewicz, Bogdan;
Dziedzic, Andrzej

Publication type:

Article

Fabrication of Low On‐Resistance and Normally Off AlGaN/GaN Metal Oxide Semiconductor Heterojunction Field‐Effect Transistors with AlGaN Back Barrier by the Selective Area Regrowth Technique.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200840

By:

Tajima, Jumpei;
Hikosaka, Toshiki;
Nunoue, Shinya

Publication type:

Article

Analysis of Mechanical Strain in AlGaN/GaN HFETs.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200683

By:

Yazdani, Hossein;
Graff, Andreas;
Simon-Najasek, Michél;
Altmann, Frank;
Brunner, Frank;
Ostermay, Ina;
Chevtchenko, Serguei;
Würfl, Joachim

Publication type:

Article

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200496

By:

Chen, Ding-Yuan;
Wen, Kai-Hsin;
Thorsell, Mattias;
Lorenzini, Martino;
Hjelmgren, Hans;
Chen, Jr-Tai;
Rorsman, Niklas

Publication type:

Article

Two‐Dimensional Electron Gases at the Amorphous and Crystalline SrTiO3/KTaO3 Heterointerfaces.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 13, p. 1, doi. 10.1002/pssa.202300235

By:

Xu, Hao;
Gan, Yulin;
Zhao, Yuchen;
Li, Minghang;
Hu, Xinzhe;
Chen, Xuanzhuang;
Wang, Ruwu;
Li, Ying;
Sun, Jirong;
Hu, Fengxia;
Chen, Yunzhong;
Shen, Baogen

Publication type:

Article

Performance Improvement in AlGaN/GaN High‐Electron‐Mobility Transistors by Low‐Temperature Inductively Coupled Plasma–Chemical Vapor Deposited SiNx as Gate Dielectric and Surface Passivation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202200509

By:

Surana, Vivek Kumar;
Ganguly, Swaroop;
Saha, Dipankar

Publication type:

Article

Delta‐Doped β‐(Al0.17Ga0.83)2O3/Ga2O3 Double‐Channel Heterostructure MODFETs.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 20, p. 1, doi. 10.1002/pssa.202100842

By:

Atmaca, Gökhan;
Cha, Ho-Young

Publication type:

Article

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 14, p. 1, doi. 10.1002/pssa.202200024

By:

Chen, Ling;
Wang, Kai;
Shen, Pei;
Fang, Yi;
Liu, Yuqi;
Wang, Hong

Publication type:

Article

Multichannel AlGaN/GaN Schottky Barrier Diode with Low Turn‐On Voltage and On‐Resistance.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 13, p. 1, doi. 10.1002/pssa.202200194

By:

Li, Ang;
Wang, Chong;
Zheng, Xuefeng;
Ma, Xiaohua;
He, Yunlong;
Liu, Kai;
Zhao, Yaopeng;
Hao, Yue

Publication type:

Article

Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 8, p. 1, doi. 10.1002/pssa.202100802

By:

Yazdani, Hossein;
Chevtchenko, Serguei;
Brunner, Frank;
Tränkle, Günther;
Würfl, Joachim

Publication type:

Article

Diffusive transport in the lowest Landau level of disordered 2d semimetals: the mean-square-displacement approach.

Published in:

European Physical Journal B: Condensed Matter, 2022, v. 95, n. 6, p. 1, doi. 10.1140/epjb/s10051-022-00358-1

By:

Sinner, Andreas;
Tkachov, Gregor

Publication type:

Article

Effect of charged impurity correlations on electrical conductivity in monolayer graphene double-layer systems.

Published in:

European Physical Journal B: Condensed Matter, 2022, v. 95, n. 1, p. 1, doi. 10.1140/epjb/s10051-021-00273-x

By:

Oanh, Le Thi Kieu;
Khanh, Nguyen Quoc;
Linh, Dang Khanh

Publication type:

Article

The theoretical study of the mobility of a two-dimensional electron gas in ALGaN/GaN/ALGaN double heterostructures.

Published in:

European Physical Journal B: Condensed Matter, 2021, v. 94, n. 5, p. 1, doi. 10.1140/epjb/s10051-021-00111-0

By:

Van Tuan, Truong;
Khanh, Nguyen Quoc;
Van Tai, Vo;
Linh, Dang Khanh

Publication type:

Article

Exchange-correlation effects and layer-thickness affect plasmon modes in gapped graphene-GaAs double-layer systems.

Published in:

European Physical Journal B: Condensed Matter, 2021, v. 94, n. 1, p. 1, doi. 10.1140/epjb/s10051-020-00006-6

By:

Dong Thi Kim, Phuong;
Van Nguyen, Men

Publication type:

Article

Thermodynamic properties of an electron gas on a curved surface.

Published in:

European Physical Journal B: Condensed Matter, 2013, v. 86, n. 9, p. 1, doi. 10.1140/epjb/e2013-40495-2

By:

Batista Jr., F.F.;
Farias, G.A.;
Almeida, N.S.

Publication type:

Article

Elastic tunneling identification through crossings, anti-crossings and splitting of states in the complex electronic current of systems based on mesoscopic molecules.

Published in:

European Physical Journal B: Condensed Matter, 2013, v. 86, n. 9, p. 1, doi. 10.1140/epjb/e2013-40343-5

By:

López, Luis I. A.;
Mendoza, Michel;
Ujevic, Sebastian

Publication type:

Article

Multimode ultrastrong coupling in three-dimensional photonic-crystal cavities.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-58835-x

By:

Tay, Fuyang;
Mojibpour, Ali;
Sanders, Stephen;
Liang, Shuang;
Xu, Hongjing;
Gardner, Geoff C.;
Baydin, Andrey;
Manfra, Michael J.;
Alabastri, Alessandro;
Hagenmüller, David;
Kono, Junichiro

Publication type:

Article