Works matching DE "TWO-dimensional electron gas"

Results: 436

Fractional Magnetic Breakdown Frequencies in Semiconductor Lattices with One-Dimensional Modulation.

Published in:

JETP Letters, 2025, v. 121, n. 6, p. 474, doi. 10.1134/S0021364024604640

By:

Tkachenko, O. A.;
Tkachenko, V. A.;
Baksheev, D. G.;
Krix, Z. E.;
Sushkov, O. P.

Publication type:

Article

Unusually High‐Density 2D Electron Gases in N‐Polar AlGaN/GaN Heterostructures with GaN/AlN Superlattice Back Barriers Grown on Sapphire Substrates.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 5, p. 1, doi. 10.1002/pssr.202400379

By:

Matys, Maciej;
Yamada, Atsushi;
Ohki, Toshihiro

Publication type:

Article

Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs.

Published in:

Chemistry - A European Journal, 2024, v. 30, n. 27, p. 1, doi. 10.1002/chem.202304100

By:

Xu, Linling;
Guo, Hui;
Tao, Jiaqi;
Zavabeti, Ali;
Zhou, Yugang;
Zheng, Youdou;
Zhang, Rong;
Chen, Dunjun

Publication type:

Article

Influence of Al pre-deposition time on AlGaN/GaN heterostructures grown on sapphire substrate by metal organic chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 17, p. 14737, doi. 10.1007/s10854-020-04037-8

By:

Liu, Chuanyang;
Wang, Jia;
Shen, Yiming;
Du, Lin;
Zhang, Yachao;
Xu, Shengrui;
Jiang, Li;
Zhang, Jincheng;
Hao, Yue

Publication type:

Article

Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 9, p. 9061, doi. 10.1007/s10854-016-4939-x

By:

Yang, Fan;
He, Liang;
Zheng, Yue;
Li, Liuan;
Chen, Zijun;
Zhou, Deqiu;
He, Zhiyuan;
Yao, Yao;
Ni, Yiqiang;
Shen, Zhen;
Zhang, Xiaorong;
He, Lei;
Wu, Zhisheng;
Zhang, Baijun;
Liu, Yang

Publication type:

Article

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9753, doi. 10.1007/s10854-015-3645-4

By:

Yang, Fan;
Yao, Yao;
He, Zhiyuan;
Zhou, Guilin;
Zheng, Yue;
He, Liang;
Zhang, Jincheng;
Ni, Yiqiang;
Zhou, Deqiu;
Shen, Zhen;
Zhong, Jian;
Wu, Zhisheng;
Zhang, Baijun;
Liu, Yang

Publication type:

Article

Active and buffer layers of GaN HEMT: ECV profiling and 2DEG calculation.

Published in:

Materials Research Innovations, 2020, v. 24, n. 7, p. 402, doi. 10.1080/14328917.2019.1688559

By:

Yakovlev, George;
Zubkov, Vasily;
Solomnikova, Anna

Publication type:

Article

Channel-resolved wavefunctions of transverse magnetic focusing.

Published in:

Communications Physics, 2024, v. 7, n. 1, p. 1, doi. 10.1038/s42005-024-01902-4

By:

Lee, Seokyeong;
Park, Dongsung T.;
Kim, Uhjin;
Jung, Hwanchul;
Chung, Yunchul;
Choi, Hyoungsoon;
Choi, Hyung Kook

Publication type:

Article

Gate tunable edge magnetoplasmon resonators.

Published in:

Communications Physics, 2024, v. 7, n. 1, p. 1, doi. 10.1038/s42005-024-01803-6

By:

Frigerio, Elric;
Rebora, Giacomo;
Ruelle, Mélanie;
Souquet-Basiège, Hubert;
Jin, Yong;
Gennser, Ulf;
Cavanna, Antonella;
Plaçais, Bernard;
Baudin, Emmanuel;
Berroir, Jean-Marc;
Safi, Inès;
Degiovanni, Pascal;
Fève, Gwendal;
Ménard, Gerbold C.

Publication type:

Article

Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy.

Published in:

Photonics, 2023, v. 10, n. 7, p. 800, doi. 10.3390/photonics10070800

By:

Khan, Sahanowaj;
Acharyya, Aritra;
Inokawa, Hiroshi;
Satoh, Hiroaki;
Biswas, Arindam;
Dhar, Rudra Sankar;
Banerjee, Amit;
Seteikin, Alexey Y.

Publication type:

Article

Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models.

Published in:

Photonics, 2020, v. 7, n. 1, p. 2, doi. 10.3390/photonics7010002

By:

Ciano, Chiara;
Virgilio, Michele;
Bagolini, Luigi;
Baldassarre, Leonetta;
Rossetti, Andrea;
Pashkin, Alexej;
Helm, Manfred;
Montanari, Michele;
Persichetti, Luca;
Di Gaspare, Luciana;
Capellini, Giovanni;
Paul, Douglas J.;
Scalari, Giacomo;
Faist, Jèrome;
De Seta, Monica;
Ortolani, Michele

Publication type:

Article

Quantum Theory of Multisubband Plasmon– Phonon Coupling.

Published in:

Photonics, 2020, v. 7, n. 1, p. 19, doi. 10.3390/photonics7010019

By:

Ribeiro, Sofia;
Vasanelli, Angela;
Todorov, Yanko;
Sirtori, Carlo

Publication type:

Article

Transporting and manipulating single electrons in surface-acoustic-wave minima.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 3, p. n/a, doi. 10.1002/pssb.201600658

By:

Ford, Christopher J. B.

Publication type:

Article

Fast-forward generation of non-equilibrium steady states of a charged particle under the magnetic field.

Published in:

Progress of Theoretical & Experimental Physics: PTEP, 2023, v. 2023, n. 6, p. 1, doi. 10.1093/ptep/ptad067

By:

Setiawan, Iwan;
Sugihakim, Ryan;
Gunara, Bobby Eka;
Masuda, Shumpei;
Nakamura, Katsuhiro

Publication type:

Article

Strong Rashba parameter of two-dimensional electron gas at CaZrO3/SrTiO3 heterointerface.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-43247-y

By:

Kwon, Duhyuk;
Kwak, Yongsu;
Lee, Doopyo;
Jo, Wonkeun;
Cho, Byeong-Gwan;
Koo, Tae-Yeong;
Song, Jonghyun

Publication type:

Article

Unveiling geometric quantum resources and uncertainty relation in a two-dimensional electron gas: Unveiling geometric quantum resources and uncertainty...: C. Banouni et al.

Published in:

Applied Physics B: Lasers & Optics, 2025, v. 131, n. 1, p. 1, doi. 10.1007/s00340-024-08368-w

By:

Banouni, Chaimae;
Bouafia, Zakaria;
Mansour, Mostafa;
Ouchrif, Mohamed

Publication type:

Article

Anomalous enhancement of thermoelectric power factor in multiple two-dimensional electron gas system.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-023-44165-3

By:

Uematsu, Yuto;
Ishibe, Takafumi;
Mano, Takaaki;
Ohtake, Akihiro;
Miyazaki, Hideki T.;
Kasaya, Takeshi;
Nakamura, Yoshiaki

Publication type:

Article

A broad-spectrum gas sensor based on correlated two-dimensional electron gas.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-44331-7

By:

Hong, Yuhao;
Wei, Long;
Zhang, Qinghua;
Deng, Zhixiong;
Liao, Xiaxia;
Zhou, Yangbo;
Wang, Lei;
Li, Tongrui;
Liu, Junhua;
Xiao, Wen;
Hu, Shilin;
Wang, Lingfei;
Li, Lin;
Huijben, Mark;
Gan, Yulin;
Chen, Kai;
Koster, Gertjan;
Rijnders, Guus;
Liao, Zhaoliang

Publication type:

Article

Triplet correlations in Cooper pair splitters realized in a two-dimensional electron gas.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-40551-z

By:

Wang, Qingzhen;
ten Haaf, Sebastiaan L. D.;
Kulesh, Ivan;
Xiao, Di;
Thomas, Candice;
Manfra, Michael J.;
Goswami, Srijit

Publication type:

Article

Anomalous electronic transport in high-mobility Corbino rings.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39526-x

By:

Vijayakrishnan, Sujatha;
Poitevin, F.;
Yu, Oulin;
Berkson-Korenberg, Z.;
Petrescu, M.;
Lilly, M. P.;
Szkopek, T.;
Agarwal, Kartiek;
West, K. W.;
Pfeiffer, L. N.;
Gervais, G.

Publication type:

Article

Gate-tunable superconducting diode effect in a three-terminal Josephson device.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-38856-0

By:

Gupta, Mohit;
Graziano, Gino V.;
Pendharkar, Mihir;
Dong, Jason T.;
Dempsey, Connor P.;
Palmstrøm, Chris;
Pribiag, Vlad S.

Publication type:

Article

Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-37866-2

By:

Grezes, Cécile;
Kandazoglou, Aurélie;
Cosset-Cheneau, Maxen;
Arche, Luis M. Vicente;
Noël, Paul;
Sgarro, Paolo;
Auffret, Stephane;
Garello, Kevin;
Bibes, Manuel;
Vila, Laurent;
Attané, Jean-Philippe

Publication type:

Article

SPICE Modeling and Performance Analysis of Enhancement-Mode GaN HEMTs for Augmented Hard-Switching Energy Conversion Efficiency.

Published in:

Pertanika Journal of Science & Technology, 2024, v. 33, n. 3, p. 1243, doi. 10.47836/pjst.32.3.14

By:

Xinzhi Liu;
Shafie, Suhaidi;
Radzi, Mohd Amran Mohd;
Azis, Norhafiz;
Norddin, Nurbahirah;
Lawal, Ismail;
Zulkifli, Normaziah;
Abdul Karim, Abdul Hafiz

Publication type:

Article

Influence of Device Geometry and Imperfections on the Interpretation of Transverse Magnetic Focusing Experiments.

Published in:

Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03671-x

By:

Lee, Yik Kheng;
Smith, Jackson S.;
Cole, Jared H.

Publication type:

Article

Calculation of the Fermi–Dirac Function Distribution in Two-Dimensional Semiconductor Materials at High Temperatures and Weak Magnetic Fields.

Published in:

NANO (1793-2920), 2021, v. 16, n. 9, p. 1, doi. 10.1142/S1793292021501022

By:

Erkaboev, U. I.;
Gulyamov, G.;
Mirzaev, J. I.;
Rakhimov, R. G.;
Sayidov, N. A.

Publication type:

Article

Modeling of access resistances and channel temperature estimation for GaN HEMT.

Published in:

Journal of Thermal Analysis & Calorimetry, 2022, v. 147, n. 20, p. 10991, doi. 10.1007/s10973-022-11371-y

By:

Islam, Shariful;
Alim, Mohammad Abdul;
Chowdhury, Abu Zahed;
Gaquiere, Christophe

Publication type:

Article

AlGaN/GaN Heterostructures Electrical Performance by Altering GaN/Sapphire Buffers Growth Pressure and Low‐Temperature GaN Interlayers Application.

Published in:

Crystal Research & Technology, 2021, v. 56, n. 12, p. 1, doi. 10.1002/crat.202100090

By:

Wośko, Mateusz;
Paszkiewicz, Bogdan;
Paszkiewicz, Regina

Publication type:

Article

Generation of two‐dimensional electron gas to normally depleted AlGaN/GaN hetero‐interface by SiO2 deposition and subsequent high‐temperature annealing.

Published in:

Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 17, p. 670, doi. 10.1049/ell2.12213

By:

Nanjo, T.;
Koyama, H.;
Imazawa, T.;
Kiyoi, A.;
Imai, A.;
Hayashida, T.;
Watahiki, T.;
Yamamoto, Y.;
Miura, N.

Publication type:

Article

Ultrathin barrier AlGaN/GaN hybrid-anode-diode with MOCVD in-situ Si3N4-cap and LPCVD-Si3N4 bilayer passivation stack for dynamic characteristic improvement.

Published in:

Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 15, p. 789, doi. 10.1049/el.2020.0432

By:

Zhou, Qi;
Yang, Xiu;
Zhu, Liyang;
Chen, Kuangli;
Han, Xiaoqi;
Luo, Zhihua;
Zhou, Chunhua;
Chen, Wanjun;
Zhang, Bo

Publication type:

Article

Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO 2 Detection.

Published in:

Chemosensors, 2023, v. 11, n. 4, p. 252, doi. 10.3390/chemosensors11040252

By:

Hu, Zhixiang;
Zhou, Licheng;
Li, Long;
Ying, Binzhou;
Zhao, Yunong;
Wang, Peng;
Li, Huayao;
Zhang, Yang;
Liu, Huan

Publication type:

Article

Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-84451-y

By:

Deb, Swarup;
Dhar, Subhabrata

Publication type:

Article

A modulation-doped heterostructure-based terahertz photoconductive antenna emitter with recessed metal contacts.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-76413-7

By:

Afalla, Jessica;
De Los Reyes, Alexander;
Cabello, Neil Irvin;
Vistro, Victor DC Andres;
Faustino, Maria Angela;
Ferrolino, John Paul;
Prieto, Elizabeth Ann;
Bardolaza, Hannah;
Catindig, Gerald Angelo R.;
Gonzales, Karl Cedric;
Mag-usara, Valynn Katrine;
Kitahara, Hideaki;
Somintac, Armando S.;
Salvador, Arnel A.;
Tani, Masahiko;
Estacio, Elmer S.

Publication type:

Article

Spectral weight reduction of two-dimensional electron gases at oxide surfaces across the ferroelectric transition.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-73657-1

By:

Jaiban, P.;
Lu, M.-H.;
Eknapakul, T.;
Chaiyachad, S.;
Yao, S. H.;
Pisitpipathsin, N.;
Unruan, M.;
Siriroj, S.;
He, R.-H.;
Mo, S.-K.;
Watcharapasorn, A.;
Yimnirun, R.;
Tokura, Y.;
Shen, Z.-X.;
Hwang, H. Y.;
Maensiri, S.;
Meevasana, W.

Publication type:

Article

K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm−1 Extrinsic Transconductance.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 3, p. 1, doi. 10.1002/pssa.202400592

By:

Yazdani, Hossein;
Beleniotis, Petros;
Brunner, Frank;
Ostermay, Ina;
Würfl, Joachim;
Rudolph, Matthias;
Heinrich, Wolfgang;
Hilt, Oliver

Publication type:

Article

Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400060

By:

Zazuli, Aina Hiyama;
Kowaki, Taketo;
Miyamoto, Minagi;
Hanasaku, Koki;
Inahara, Daisuke;
Fujii, Kai;
Kurai, Satoshi;
Okada, Narihito;
Yamada, Yoichi

Publication type:

Article

Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 18, p. 1, doi. 10.1002/pssa.202400479

By:

Mao, Ling‐Feng

Publication type:

Article

Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 14, p. 1, doi. 10.1002/pssa.202400239

By:

Li, Ang;
Wang, Chong;
He, Yunlong;
Zhang, Wentao;
Zheng, Xuefeng;
Ma, Xiaohua;
Liu, Kai;
Hao, Yue

Publication type:

Article

Active Terahertz Metamaterials Integrated with Metal–Semiconductor–Metal Varactor Diodes for Amplitude Modulation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300655

By:

Lee, Gyejung;
Hwang, Ji Hyun;
Jang, Jae‐Hyung

Publication type:

Article

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 10, p. 1, doi. 10.1002/pssa.202400024

By:

Cai, Jing;
Yao, Ruo‐He;
Geng, Kui‐Wei

Publication type:

Article

Asymmetric Gate and SiC Substrate Grooved InGaN Back‐Barrier AlGaN/GaN HEMTs for High‐Power RF Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 5, p. 1, doi. 10.1002/pssa.202300708

By:

Parvez, Bazila;
Sahu, Jyoti;
Basak, Subhajit;
Patil, Mahalaxmi;
Sahu, Arpit;
Garg, Gaurav;
Ganguly, Swaroop;
Saha, Dipankar

Publication type:

Article

Effect of SiO2 Surface Passivation on the Performance of GaN Polarization Superjunction Heterojunction Field Effect Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 4, p. 1, doi. 10.1002/pssa.202300199

By:

Du, Yangming;
Madathil, Sankara Narayanan Ekkanath;
Kawai, Hiroji;
Yagi, Shuichi;
Narui, Hironobu

Publication type:

Article

Effect of High Al Content AlGaN Buffer Layer on the Properties of GaN‐on‐Silicon Materials.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 2, p. 1, doi. 10.1002/pssa.202300757

By:

Liu, YuQi;
Wang, Kai;
Nie, Zuorong;
Wang, Hong

Publication type:

Article

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel AlxGa1−xN/GaN/AlyGa1−yN/GaN High‐Electron‐Mobility Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 23, p. 1, doi. 10.1002/pssa.202300413

By:

Cai, Jing;
Yao, Ruo-He;
Liu, Yu-Rong;
Geng, Kui-Wei

Publication type:

Article

Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 18, p. 1, doi. 10.1002/pssa.202100078

By:

Paszkiewicz, Bartłomiej Kazimierz;
Paszkiewicz, Bogdan;
Dziedzic, Andrzej

Publication type:

Article

Fabrication of Low On‐Resistance and Normally Off AlGaN/GaN Metal Oxide Semiconductor Heterojunction Field‐Effect Transistors with AlGaN Back Barrier by the Selective Area Regrowth Technique.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200840

By:

Tajima, Jumpei;
Hikosaka, Toshiki;
Nunoue, Shinya

Publication type:

Article

Analysis of Mechanical Strain in AlGaN/GaN HFETs.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200683

By:

Yazdani, Hossein;
Graff, Andreas;
Simon-Najasek, Michél;
Altmann, Frank;
Brunner, Frank;
Ostermay, Ina;
Chevtchenko, Serguei;
Würfl, Joachim

Publication type:

Article

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200496

By:

Chen, Ding-Yuan;
Wen, Kai-Hsin;
Thorsell, Mattias;
Lorenzini, Martino;
Hjelmgren, Hans;
Chen, Jr-Tai;
Rorsman, Niklas

Publication type:

Article

Two‐Dimensional Electron Gases at the Amorphous and Crystalline SrTiO3/KTaO3 Heterointerfaces.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 13, p. 1, doi. 10.1002/pssa.202300235

By:

Xu, Hao;
Gan, Yulin;
Zhao, Yuchen;
Li, Minghang;
Hu, Xinzhe;
Chen, Xuanzhuang;
Wang, Ruwu;
Li, Ying;
Sun, Jirong;
Hu, Fengxia;
Chen, Yunzhong;
Shen, Baogen

Publication type:

Article

Performance Improvement in AlGaN/GaN High‐Electron‐Mobility Transistors by Low‐Temperature Inductively Coupled Plasma–Chemical Vapor Deposited SiNx as Gate Dielectric and Surface Passivation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202200509

By:

Surana, Vivek Kumar;
Ganguly, Swaroop;
Saha, Dipankar

Publication type:

Article

Delta‐Doped β‐(Al0.17Ga0.83)2O3/Ga2O3 Double‐Channel Heterostructure MODFETs.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 20, p. 1, doi. 10.1002/pssa.202100842

By:

Atmaca, Gökhan;
Cha, Ho-Young

Publication type:

Article