Works matching DE "TUNNEL junction devices"
Results: 39
Ultra-thin, high performance tunnel junctions for III-V multijunction cells.
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- Progress in Photovoltaics, 2014, v. 22, n. 6, p. 656, doi. 10.1002/pip.2333
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Simulation of Tunnel Junction in Cascade Solar Cell (GaAs/Ge) Using AMPS-1D.
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- Journal of Nano- & Electronic Physics, 2014, v. 6, n. 4, p. 04001-1
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I-V Characteristics of InGaP/GaAs Solar Cell with the presence of a Back Surface Field and a Tunnel junction.
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- Journal of Electrical Systems, 2018, v. 14, n. 2, p. 64
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Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing.
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- Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-019-56816-x
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A Search for the Decay of Metastable 229mTh with Superconducting Tunnel Junctions.
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- Journal of Low Temperature Physics, 2018, v. 193, n. 5/6, p. 1214, doi. 10.1007/s10909-018-1989-x
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Superconducting Tunnel Junctions for High-Precision EUV Spectroscopy.
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- Journal of Low Temperature Physics, 2016, v. 184, n. 3/4, p. 694, doi. 10.1007/s10909-015-1443-2
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Response of the Killed Electrode in STJ X-ray Detectors.
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- Journal of Low Temperature Physics, 2012, v. 167, n. 3/4, p. 410, doi. 10.1007/s10909-011-0432-3
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Andreev Reflections in Micrometer-Scale Normal Metal-Insulator-Superconductor Tunnel Junctions.
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- Journal of Low Temperature Physics, 2012, v. 167, n. 3/4, p. 392, doi. 10.1007/s10909-011-0425-2
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Energy Resolution of STJ X-Ray Detectors with Killed Electrode. Simple Model.
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- Journal of Low Temperature Physics, 2012, v. 167, n. 3/4, p. 404, doi. 10.1007/s10909-012-0525-7
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Intrinsic Resolution of STJ Detectors due to Competition Between Electron and Hole Channels in Quasiparticle Multitunneling.
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- Journal of Low Temperature Physics, 2012, v. 167, n. 3/4, p. 398, doi. 10.1007/s10909-012-0533-7
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Influence of the Quasiparticle and Phonon Subsystem Coupling on the Multitunneling in STJ Detectors.
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- Journal of Low Temperature Physics, 2012, v. 167, n. 3/4, p. 416, doi. 10.1007/s10909-012-0530-x
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Heating of Superconducting Tunnel Junction Detector by X-Ray Flux.
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- Journal of Low Temperature Physics, 2012, v. 167, n. 3/4, p. 428, doi. 10.1007/s10909-012-0585-8
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Some Remarks on the Energy Resolution of STJ.
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- Journal of Low Temperature Physics, 2012, v. 167, n. 3/4, p. 422, doi. 10.1007/s10909-012-0524-8
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The Modulation and Enhancement of Thermopower in a Luttinger liquid.
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- Journal of Low Temperature Physics, 2012, v. 167, n. 1/2, p. 26, doi. 10.1007/s10909-012-0468-z
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Pushing the limits of concentrated photovoltaic solar cell tunnel junctions in novel high-efficiency GaAs phototransducers based on a vertical epitaxial heterostructure architecture.
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- Progress in Photovoltaics, 2015, v. 23, n. 12, p. 1687, doi. 10.1002/pip.2709
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Wafer‐fused 1300 nm VCSELs with an active region based on superlattice.
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- Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 18, p. 697, doi. 10.1049/ell2.12232
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On a semiconductor laser with a p- n tunnel junction with radiation emission through the substrate.
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- Semiconductors, 2015, v. 49, n. 11, p. 1440, doi. 10.1134/S1063782615110123
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Distribution of entropy production in a single-electron box.
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- Nature Physics, 2013, v. 9, n. 10, p. 644, doi. 10.1038/nphys2711
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Highly efficient spin transport in epitaxial graphene on SiC.
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- Nature Physics, 2012, v. 8, n. 7, p. 557, doi. 10.1038/nphys2331
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Heat-Assisted Multiferroic Solid-State Memory.
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- Materials (1996-1944), 2017, v. 10, n. 9, p. 991, doi. 10.3390/ma10090991
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Ferroelectric tunnel junction for memory and logic design.
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- Europhysics News, 2014, v. 45, n. 2, p. 15
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Microwave detection performance of In<sub>0.53</sub>Ga<sub>0.47</sub>As/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> quantum-well tunnel field-effect transistors.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 10, p. 842, doi. 10.1049/el.2016.0328
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Thermoelectric Effects in Planar Tunnel Junctions.
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- Acta Physica Polonica: A, 2012, v. 121, n. 5/6, p. 1188
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Characterization and control of charge transfer in a tunnel junction.
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- Physica Status Solidi (B), 2017, v. 254, n. 3, p. n/a, doi. 10.1002/pssb.201600619
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Numerical simulation and performance measure of highly efficient GaP/InP/Si multi-junction solar cell.
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- International Journal of Energy Research, 2017, v. 41, n. 8, p. 1211, doi. 10.1002/er.3708
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Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface.
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- Nature Materials, 2013, v. 12, n. 5, p. 397, doi. 10.1038/nmat3564
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Superlattice and Quantum Dot Unipolar Barrier Infrared Detectors.
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- Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3071, doi. 10.1007/s11664-013-2641-9
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Computational analysis of hybrid perovskite on silicon 2-T tandem solar cells based on a Si tunnel junction.
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- Optical & Quantum Electronics, 2018, v. 50, n. 1, p. 1, doi. 10.1007/s11082-017-1284-0
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Design of a lattice-matched III-V-N/Si photovoltaic tandem cell monolithically integrated on silicon substrate.
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- Optical & Quantum Electronics, 2014, v. 46, n. 10, p. 1397, doi. 10.1007/s11082-014-9909-z
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Fabrication of tunnel junction-based molecular electronics and spintronics devices.
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- Journal of Nanoparticle Research, 2012, v. 14, n. 10, p. 1, doi. 10.1007/s11051-012-1195-8
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Effect of a magnetic field on the conductivity of superconductor-insulator-normal metal tunnel junctions.
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- JETP Letters, 2015, v. 101, n. 11, p. 740, doi. 10.1134/S0021364015110107
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Graphene-based tunnel junction.
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- JETP Letters, 2014, v. 98, n. 11, p. 689, doi. 10.1134/S0021364013240119
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Conditioning of Superconductive Properties in Graph-Shaped Reticles.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-66457-0
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Manufacture and Study of Switch p-n-Junctions for Cascade Photovoltaic Cells.
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- Technical Physics Letters, 2018, v. 44, n. 12, p. 1130, doi. 10.1134/S1063785018120490
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Novel ferroelectric tunnel junctions for nonvolatile memories.
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- National Science Review, 2014, v. 1, n. 2, p. 167, doi. 10.1093/nsr/nwt008
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Shockley‐Read‐Hall and Auger Recombination in Blue InGaN Tunnel‐Junction Light‐Emitting Diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 21, p. N.PAG, doi. 10.1002/pssa.201800271
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Numerical Investigations on the n<sup>+</sup>-GaN/AlGaN/p<sup>+</sup>-GaN Tunnel Junction for III-Nitride UV Light-Emitting Diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 12, p. n/a, doi. 10.1002/pssa.201700624
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A dielectric-constant-controlled tunnel junction for III-nitride light-emitting diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 6, p. n/a, doi. 10.1002/pssa.201600937
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High‐Efficiency Polymer Homo‐Tandem Solar Cells with Carbon Quantum‐Dot‐Doped Tunnel Junction Intermediate Layer.
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- Advanced Energy Materials, 2018, v. 8, n. 10, p. 1, doi. 10.1002/aenm.201702165
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