Works matching DE "TUNNEL field-effect transistors"

Results: 276

Study of Oxide Material Variation on Electrical Characteristics and Linearity Parameters Induced in Vertical Nanowire TFET.

Published in:

Semiconductors, 2025, v. 59, n. 5, p. 474, doi. 10.1134/S1063782625600494

By:

Bhardwaj, Anjana;
Das, Amit;
Rai, Amrita;
Krishna, Ram;
Upadhyay, A. K.

Publication type:

Article

Numerical Comparative Analysis of 10T-SRAM Cells with 6T, 7T, 8T, and 9T Using Vertical Nanowire Tunnel FETs.

Published in:

Semiconductors, 2025, v. 59, n. 5, p. 427, doi. 10.1134/S1063782625600299

By:

Das, Amit;
Bhardwaj, Anjana;
Gupta, Ashish;
Raj, Geetanjali

Publication type:

Article

Comparative investigation of low-power ferroelectric material embedded with different heterojunction vertical TFET structures.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 22, p. 18072, doi. 10.1007/s10854-022-08666-z

By:

Singh, Shailendra

Publication type:

Article

Multifunctional WSe2/SnSe2/WSe2 van der Waals heterostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 15, p. 11841, doi. 10.1007/s10854-022-08147-3

By:

Abderrahmane, Abdelkader;
Woo, Changlim;
Ko, Pil Ju

Publication type:

Article

Detection of SARS-CoV-2 using dielectric modulated TFET-based biosensor.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 13, p. 10323, doi. 10.1007/s10854-022-08020-3

By:

Wangkheirakpam, Vandana Devi;
Bhowmick, Brinda;
Pukhrambam, Puspa Devi

Publication type:

Article

Band gap and gate metal engineering of novel hetero-material InAs/GaAs-based JLTFET for improved wireless applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 3, p. 3155, doi. 10.1007/s10854-020-05064-1

By:

Sharma, Samriti;
Chaujar, Rishu

Publication type:

Article

Profound analysis on sensing performance of Nanogap SiGe source DM-TFET biosensor.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 24, p. 22699, doi. 10.1007/s10854-020-04795-5

By:

Anvarifard, Mohammad K.;
Ramezani, Zeinab;
Amiri, I. S.;
Tamersit, Khalil;
Nejad, Alireza Mahdavi

Publication type:

Article

Flip-Flop Realization: Conventional Memory Elements Design with Transistor Nodes.

Published in:

Journal of VLSI Circuits & Systems (JVCS), 2023, v. 5, n. 1, p. 20, doi. 10.31838/jvcs/05.01.03

By:

Muyanja, Andrew;
Nabende, Peter;
Okunzi, J.;
Kagarura, Mark

Publication type:

Article

Simulation Analysis of Noise Components in NCTFET with Ferroelectric Layer in Gate Stack.

Published in:

Integrated Ferroelectrics, 2023, v. 231, n. 1, p. 171, doi. 10.1080/10584587.2022.2143194

By:

Singh, Amandeep;
Sinha, Sanjeet Kumar;
Chander, Sweta

Publication type:

Article

A New Type of Tri-Input TFET with T-Shaped Channel Structure Exhibiting Three-Input Majority Logic Behavior.

Published in:

Active & Passive Electronic Components, 2021, p. 1, doi. 10.1155/2021/8919283

By:

Hao, Ye;
Zhidi, Jiang;
Jianping, Hu

Publication type:

Article

Stability Performance of a Quantum Square-shaped Extended Source P-N-P-N TFET with Silicon Carbide Substrate by Means of a Physics-Based Analytical Model.

Published in:

Tecciencia, 2020, v. 15, n. 28, p. 23, doi. 10.18180/tecciencia.28.3

By:

Sabaghi, Masoud

Publication type:

Article

Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-56455-x

By:

Chava, Phanish;
Kateel, Vaishnavi;
Watanabe, Kenji;
Taniguchi, Takashi;
Helm, Manfred;
Mikolajick, Thomas;
Erbe, Artur

Publication type:

Article

Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-44096-5

By:

Cherik, Iman Chahardah;
Mohammadi, Saeed;
Maity, Subir Kumar

Publication type:

Article

Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-44096-5

By:

Cherik, Iman Chahardah;
Mohammadi, Saeed;
Maity, Subir Kumar

Publication type:

Article

Impact of trap-related non-idealities on the performance of a novel TFET-based biosensor with dual doping-less tunneling junction.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-38651-3

By:

Cherik, Iman Chahardah;
Mohammadi, Saeed

Publication type:

Article

Improving on current using new double-material heterojunction gate all around TFET (DMHJGAA TFET): Modeling and simulation.

Published in:

International Journal of Computational Materials Science & Engineering, 2021, v. 10, n. 4, p. 1, doi. 10.1142/S2047684121500214

By:

Vimala, P.;
Shree, Navya;
Priyadarshini, U.;
Arun Samuel, T. S.

Publication type:

Article

Impact of tunnel gate process variations on analog/radio frequency (microwave) and small signal parameters of hetero‐material tunneling interfaced charge plasma junctionless tunnel field effect transistor.

Published in:

International Journal of Circuit Theory & Applications, 2022, v. 50, n. 10, p. 3626, doi. 10.1002/cta.3347

By:

Sharma, Samriti;
Chaujar, Rishu

Publication type:

Article

Tunnel FET‐based ultra‐lightweight reconfigurable TRNG and PUF design for resource‐constrained internet of things.

Published in:

International Journal of Circuit Theory & Applications, 2021, v. 49, n. 8, p. 2299, doi. 10.1002/cta.3030

By:

Japa, Aditya;
Majumder, Manoj Kumar;
Sahoo, Subhendu K.;
Vaddi, Ramesh

Publication type:

Article

Double‐gate line‐tunneling field‐effect transistor devices for superior analog performance.

Published in:

International Journal of Circuit Theory & Applications, 2021, v. 49, n. 7, p. 2094, doi. 10.1002/cta.3002

By:

Simhadri, Hariprasad;
Dan, Surya Shankar;
Yadav, Ramakant;
Mishra, Ashutosh

Publication type:

Article

Tunnel FET‐based ultralow‐power and hardware‐secure circuit design considering p‐i‐n forward leakage.

Published in:

International Journal of Circuit Theory & Applications, 2020, v. 48, n. 4, p. 524, doi. 10.1002/cta.2731

By:

Japa, Aditya;
Majumder, Manoj Kumar;
Sahoo, Subhendu K.;
Vaddi, Ramesh

Publication type:

Article

A ferroelectric fin diode for robust non-volatile memory.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-44759-5

By:

Feng, Guangdi;
Zhu, Qiuxiang;
Liu, Xuefeng;
Chen, Luqiu;
Zhao, Xiaoming;
Liu, Jianquan;
Xiong, Shaobing;
Shan, Kexiang;
Yang, Zhenzhong;
Bao, Qinye;
Yue, Fangyu;
Peng, Hui;
Huang, Rong;
Tang, Xiaodong;
Jiang, Jie;
Tang, Wei;
Guo, Xiaojun;
Wang, Jianlu;
Jiang, Anquan;
Dkhil, Brahim

Publication type:

Article

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-38242-w

By:

Zhu, Zhongyunshen;
Persson, Anton E. O.;
Wernersson, Lars-Erik

Publication type:

Article

Sensitivity analysis of bi-metal stacked-gate-oxide hetero-juncture tunnel fet with Si0.6Ge0.4 source biosensor considering non-ideal factors.

Published in:

PLoS ONE, 2024, v. 19, n. 6, p. 1, doi. 10.1371/journal.pone.0301479

By:

Ghosh, Rittik;
Nelapati, Rajeev Pankaj;
Saha, Priyanka;
Chinthaginjala, Ravikumar;
Kim, Tai-hoon;
S., Kumar

Publication type:

Article

Design of GAA Nanosheet Ferroelectric Area Tunneling FET and Its Significance with DC/RF Characteristics Including Linearity Analyses.

Published in:

Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03690-8

By:

Thoti, Narasimhulu;
Li, Yiming

Publication type:

Article

Simulation and Performance Analysis of Dielectric Modulated Dual Source Trench Gate TFET Biosensor.

Published in:

Nanoscale Research Letters, 2021, v. 16, n. 1, p. 1, doi. 10.1186/s11671-021-03486-2

By:

Chong, Chen;
Liu, Hongxia;
Wang, Shulong;
Chen, Shupeng

Publication type:

Article

Implementation of Logic Gates Using Drain Engineering Dual Metal Gate-Based Charge Plasma TFET (DE-DMG-CP-TFET).

Published in:

NANO (1793-2920), 2023, v. 18, n. 12, p. 1, doi. 10.1142/S1793292023500819

By:

Mahoviya, Nikita;
Singh, Prabhat;
Yadav, Dharmendra Singh

Publication type:

Article

Design and Analysis of Charge Plasma-Based Vertical-Nanowire Tunnel FET for Biosensor.

Published in:

NANO (1793-2920), 2023, v. 18, n. 1, p. 1, doi. 10.1142/S1793292022501168

By:

Kumar, Parveen;
Raj, Balwinder

Publication type:

Article

gm/Id$g_m/I_d$ Analysis of vertical nanowire III–V TFETs.

Published in:

Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 18, p. 1, doi. 10.1049/ell2.12954

By:

Rangasamy, Gautham;
Zhu, Zhongyunshen;
Fhager, Lars Ohlsson;
Wernersson, Lars‐Erik

Publication type:

Article

Dual-channel trench-gate tunnel FET for improved ON-current and subthreshold swing.

Published in:

Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 21, p. 1152, doi. 10.1049/el.2019.2219

By:

Joshi, T.;
Singh, Y.;
Singh, B.

Publication type:

Article

Dual metal drain Ge-source dopingless TFET with enhanced turn-ON steep subthreshold swing and high ON-current.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 14, p. 960, doi. 10.1049/el.2017.0157

By:

Sharma, N.;
Chauhan, S. S.

Publication type:

Article

TFET-based well capacity adjustment in active pixel sensor for enhanced high dynamic range.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 9, p. 622, doi. 10.1049/el.2016.4548

By:

Fernández-Berni, J.;
Niemier, M.;
Hu, X. S.;
Lu, H.;
Li, W.;
Fay, P.;
Carmona-Galán, R.;
Rodríguez-Vázquez, Á.

Publication type:

Article

Modeling and Simulation of a TFET-Based Label-Free Biosensor with Enhanced Sensitivity.

Published in:

Chemosensors, 2023, v. 11, n. 5, p. 312, doi. 10.3390/chemosensors11050312

By:

Choudhury, Sagarika;
Baishnab, Krishna Lal;
Guha, Koushik;
Jakšić, Zoran;
Jakšić, Olga;
Iannacci, Jacopo

Publication type:

Article

Compact Capacitance Model of L-Shape Tunnel Field-Effect Transistors for Circuit Simulation.

Published in:

Journal of Information & Communication Convergence Engineering, 2021, v. 19, n. 4, p. 263, doi. 10.6109/jicce.2021.19.4.263

By:

Yun Seop Yu;
Najam, Faraz

Publication type:

Article

Comparative Analysis of Symmetrical/Asymmetrical Vertical Electrolyte‐Insulated Semiconductor Tunnel FET for pH Sensor Application.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 18, p. 1, doi. 10.1002/pssa.202400093

By:

Pundir, Aditya Kumar Singh;
Wadhwa, Girish;
Kaur, Pawandeep;
Mani, Prashant;
Bhandari, Sheetal

Publication type:

Article

The Structural Performance of a Novel Double‐Stacked Heterogeneous Gate Heterojunction Tunneling Field‐Effect Transistor.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 4, p. 1, doi. 10.1002/pssa.202300619

By:

Chen, Qing;
Liu, Hanxiao;
Miao, Ruixia;
Sun, Rong;
Yang, Lulu;
Qi, Zengwei;
Yang, Xiaofeng;
He, Wei

Publication type:

Article

Ge‐ and Ge1−zSnz‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 5, p. 1, doi. 10.1002/pssa.202200587

By:

Shaw, Namrata;
Mukhopadhyay, Bratati

Publication type:

Article

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.

Published in:

Nature Communications, 2017, v. 8, n. 1, p. 1, doi. 10.1038/s41467-017-00734-x

By:

Llinas, Juan Pablo;
Fairbrother, Andrew;
Barin, Gabriela Borin;
Wu Shi;
Kyunghoon Lee;
Shuang Wu;
Byung Yong Choi;
Braganza, Rohit;
Lear, Jordan;
Kau, Nicholas;
Wonwoo Choi;
Chen Chen;
Pedramrazi, Zahra;
Dumslaff, Tim;
Narita, Akimitsu;
Xinliang Feng;
Müllen, Klaus;
Fischer, Felix;
Zettl, Alex;
Ruffieux, Pascal

Publication type:

Article

Exploring the Potential of Tunnel Field-Effect Transistors in Biomedical Devices: A Comprehensive Survey.

Published in:

2025

By:

Devi, Swagata;
Talukdar, Jagritee;
Laskar, Naushad Manzoor;
Choudhury, Sagarika

Publication type:

Literature Review

Investigation of Reliability Issues in a hybrid Extended Dual Source Double Gate Tunnel FET.

Published in:

IETE Journal of Research, 2024, v. 70, n. 11, p. 8255, doi. 10.1080/03772063.2024.2370962

By:

Ghosh, P.;
Pratap, S.;
Tripathi, S.;
Yashwanth, K.

Publication type:

Article

An Analytical Approach to Study the Impact of Traps on Ge-Source Double Gate PNPN TFET.

Published in:

IETE Journal of Research, 2024, v. 70, n. 4, p. 4037, doi. 10.1080/03772063.2023.2217794

By:

Baruah, Karabi;
Bhowmick, Brinda;
Baishya, Srimanta

Publication type:

Article

A Comparative Analysis of Cavity Positions in Charge Plasma based Tunnel FET for Biosensor Application.

Published in:

IETE Journal of Research, 2024, v. 70, n. 3, p. 2819, doi. 10.1080/03772063.2023.2189631

By:

Kumar, Anil;
Kale, Sumit

Publication type:

Article

Diminish Short Channel Effects on Cylindrical GAA Hetero-gate Dielectric TFET using High-Density Delta.

Published in:

IETE Journal of Research, 2023, v. 69, n. 12, p. 9166, doi. 10.1080/03772063.2022.2081263

By:

Dutt, Arya;
Tiwari, Sanjana;
Joshi, Mayuresh;
Nigam, Prakhar;
Mathew, Ribu;
Beohar, Ankur

Publication type:

Article

Design and Analysis of Junctionless Based Symmetric Nanogap-Embedded TFET Biosensor.

Published in:

IETE Journal of Research, 2023, v. 69, n. 5, p. 2655, doi. 10.1080/03772063.2021.1903347

By:

Wadhwa, Girish;
Raj, Balwinder

Publication type:

Article

Investigation of Homo and Hetero-Junction Double-Gate Tunnel-FET-Based Adiabatic Inverter Circuits.

Published in:

IETE Journal of Research, 2023, v. 69, n. 2, p. 1124, doi. 10.1080/03772063.2020.1859951

By:

Pown, M.;
Sandeep, S.;
Lakshmi, B.

Publication type:

Article

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness.

Published in:

Nanoscale Research Letters, 2020, v. 15, n. 1, p. 1, doi. 10.1186/s11671-020-03360-7

By:

Zhang, Maolin;
Guo, Yufeng;
Zhang, Jun;
Yao, Jiafei;
Chen, Jing

Publication type:

Article

Design of a Double Gate Tunneling Field Effect Transistor (DG-TFET) and Performance Analysis.

Published in:

Journal of Integrated Circuits & Systems, 2024, v. 19, n. 2, p. 1, doi. 10.29292/jics.v19i2.762

By:

Kumar, Chinnala Pavan;
Sivani, K.

Publication type:

Article

esign and Performance Assessment of a Label- free Biosensor utilizing a Novel TFET Configuration.

Published in:

Journal of Integrated Circuits & Systems, 2024, v. 19, n. 1, p. 1, doi. 10.29292/jics.v19i1.784

By:

Kumar, Rapolu Anil;
Girija Sravani, K.;
Srinivasa Rao, K.

Publication type:

Article

Low-Dropout Voltage Regulator Designed with Nanowire TFET with Different Source Composition Experimental Data.

Published in:

Journal of Integrated Circuits & Systems, 2023, v. 18, n. 1, p. 1, doi. 10.29292/jics.v18i1.653

By:

do Nascimento Tolêdo, Rodrigo;
Antonio Martino, Joao;
Der Agopian, Paula Ghedini

Publication type:

Article

Total ionizing dose influence on proton irradiated triple gate SOI Tunnel FETs.

Published in:

Journal of Integrated Circuits & Systems, 2018, v. 13, n. 2, p. 1, doi. 10.29292/jics.v13i2.12

By:

Torres, H. L. F.;
Martino, J. A.;
Rooyackers, R.;
Simoen, E.;
Claeys, C.;
Agopian, P. G. D.

Publication type:

Article

Temperature Induced Analog Performance Modulation of High- Vertical Nanowire Tunnel FET.

Published in:

Semiconductors, 2025, v. 59, n. 4, p. 382, doi. 10.1134/S1063782625600020

By:

Bhardwaj, Anjana;
Das, Amit;
Sharma, Upasana;
Gupta, Ashish;
Roy, Swarnima

Publication type:

Article