Works matching DE "TUNNEL field-effect transistors"

Results: 288

Impact of Interface Traps on Reliability in Negative Capacitance Source Pocket Double Gate TFET.

Published in:

Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2025, v. 50, n. 14, p. 10855, doi. 10.1007/s13369-025-09959-1

By:

Babu, K. Murali Chandra;
Goel, Ekta

Publication type:

Article

Graphene Nanoribbon Based Asymmetric Tunnel FET for Fast Switching and Low Power Applications.

Published in:

Journal of Nano- & Electronic Physics, 2025, v. 17, n. 3, p. 03014-1, doi. 10.21272/jnep.17(3).03014

By:

Dutta, R.;
Das, D.;
De, R.

Publication type:

Article

Effect of Ge Mole Fraction on Performance Characteristics of Si1 –xGex-based Double Gate Field Effect Transistors.

Published in:

Semiconductors, 2025, v. 59, n. 7, p. 711, doi. 10.1134/S1063782625600536

By:

Prakash, Ellapu Bhanu;
Harini, Bhukya;
Ray, Ashok;
Bordoloi, Sushanta

Publication type:

Article

Performance Optimization of Channel Length Modulated Vertical Nanowire Tunnel Field Effect Transistors for High Frequency and Radio Frequency Applications.

Published in:

Semiconductors, 2025, v. 59, n. 7, p. 678, doi. 10.1134/S1063782625601001

By:

Bhardwaj, Anjana;
Das, Amit;
Gupta, Ashish;
Kumar, Dhirendra;
Yadav, Ranjeeta

Publication type:

Article

A Novel Embedded Drain Dual‐Gate Tunnel Field Effect Transistor with Drain Dielectric Pocket for Suppressing Ambipolar Effect.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 13, p. 1, doi. 10.1002/pssa.202400946

By:

Chen, Qing;
Wang, Dandan;
Miao, Ruixia;
Yang, Lulu;
Li, Jianwei;
Yang, Xiaofeng;
Zhang, Baojun;
Gu, Jing;
Qi, Zengwei;
Shang, Shiguang

Publication type:

Article

Enhanced RF analog linearity in metal gate modulated heterojunction based uniform TFET for label-free detection of dengue NS1 protein.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-08892-5

By:

T, Ranjith Kumar;
G, Lakshmi Priya

Publication type:

Article

Design and Investigation of Junction-less TFET (JL-TFET) for the Realization of Logic Gates.

Published in:

NANO (1793-2920), 2025, v. 20, n. 7, p. 1, doi. 10.1142/S1793292024501601

By:

Shah, Bhushit;
Singh, Prabhat;
Raman, Ashish;
Singh, Nagendra Pratap

Publication type:

Article

Design and Comparative Analysis of Vertical and Planar Tunnel Field Effect Transistors for Analog Performance Parameters.

Published in:

Engineering Letters, 2025, v. 33, n. 7, p. 2272

By:

Saraswathi, V.;
Siddaiah, N.

Publication type:

Article

Demonstration of a Frequency Doubler Using a Tunnel Field-Effect Transistor with Dual Pocket Doping.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 24, p. 4932, doi. 10.3390/electronics12244932

By:

Kim, Jang Hyun;
Kim, Hyunwoo

Publication type:

Article

Soft-Error-Aware Radiation-Hardened Ge-DLTFET-Based SRAM Cell Design.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 14, p. 3198, doi. 10.3390/electronics12143198

By:

Raikwal, Pushpa;
Kumar, Prashant;
Panchore, Meena;
Dwivedi, Pushpendra;
Cecil, Kanchan

Publication type:

Article

Tunnel FET and MOSFET Hybrid Integrated 9T SRAM with Data-Aware Write Technique for Ultra-Low Power Applications.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 20, p. 3392, doi. 10.3390/electronics11203392

By:

Lu, Wenjuan;
Lu, Yixiao;
Dong, Lanzhi;
Peng, Chunyu;
Wu, Xiulong;
Lin, Zhiting;
Chen, Junning

Publication type:

Article

Low Power Consumption Gate-Tunable WSe 2 /SnSe 2 van der Waals Tunnel Field-Effect Transistor.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 5, p. 833, doi. 10.3390/electronics11050833

By:

Abderrahmane, Abdelkader;
Woo, Changlim;
Ko, Pil-Ju

Publication type:

Article

Ultralow Voltage FinFET- Versus TFET-Based STT-MRAM Cells for IoT Applications.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 15, p. 1756, doi. 10.3390/electronics10151756

By:

Garzón, Esteban;
Lanuzza, Marco;
Taco, Ramiro;
Strangio, Sebastiano

Publication type:

Article

Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 4, p. 454, doi. 10.3390/electronics10040454

By:

Wang, You;
Mao, Yu;
Ji, Qizheng;
Yang, Ming;
Yang, Zhaonian;
Lin, Hai;
Lanuzza, Marco;
Strangio, Sebastiano

Publication type:

Article

Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor.

Published in:

Electronics (2079-9292), 2019, v. 8, n. 12, p. 1415, doi. 10.3390/electronics8121415

By:

Lee, Jaehong;
Kim, Garam;
Kim, Sangwan

Publication type:

Article

Energy-efficient neuromorphic system using novel tunnel FET based LIF neuron design for adaptable threshold logic and image analysis applications.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-93727-6

By:

Bashir, Faisal;
Zahoor, Furqan;
Alzahrani, Ali;
Abbas, Haider

Publication type:

Article

Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-88281-0

By:

Cherik, Iman Chahardah;
Mohammadi, Saeed;
Hurley, Paul K.;
Ansari, Lida;
Gity, Farzan

Publication type:

Article

Design and Analysis of Charge Plasma-Based Heterogeneous L-Shaped Tunnel Field-Effect Transistor (TFET) for Low-Power Applications.

Published in:

Journal of Nano- & Electronic Physics, 2024, v. 16, n. 5, p. 1, doi. 10.21272/jnep.16(5).05027

By:

Raja, P.;
Kumar, S. A.;
Shree, S. B.;
Deepadharshini, R.;
Dharani, S.

Publication type:

Article

Optimization of Subthreshold Swing in Vertical Tunnel FET Using Low Work Function Live Metal Strip and Low k Material in the Drain.

Published in:

Journal of Nano- & Electronic Physics, 2024, v. 16, n. 4, p. 1, doi. 10.21272/jnep.16(4).04029

By:

Selvi, K. Kalai;
Dhanalakshmi, K. S.

Publication type:

Article

The Study of Hetero Dielectric Buried Oxide and Heterojunction Dual Material TFET.

Published in:

Journal of Nano- & Electronic Physics, 2022, v. 14, n. 4, p. 1, doi. 10.21272/jnep.14(4).04009

By:

Vimala, P.;
Venkata Sravanthi Reddy, Bhoomi Reddy;
R, Shreyas Yadav V.;
C., Suprith

Publication type:

Article

Influence of Triple Material on Performance Study of Double Gate PiN Tunneling Graphene Nanoribbon FET for Low Power Logic Applications.

Published in:

Journal of Nano- & Electronic Physics, 2021, v. 13, n. 3, p. 03020-1, doi. 10.21272/jnep.13(3).03020

By:

Dutta, Ritam;
Paitya, Nitai

Publication type:

Article

Model of Tunneling Current on Bilayer Armchair Graphene Nanoribbon Tunnel Field Effect Transistor Using Transfer Matrix Method.

Published in:

Journal of Nano- & Electronic Physics, 2020, v. 12, n. 3, p. 1, doi. 10.21272/jnep.12(3).03036

By:

Suhendi, E.;
Fadhillah, M. F.;
Anjaningsih, I.;
Ulhaq, S. D.;
Fadhillah, A.;
Rusdiana, D.

Publication type:

Article

Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor.

Published in:

Journal of Nano- & Electronic Physics, 2017, v. 9, n. 1, p. 01030-1, doi. 10.21272/jnep.9(1).01030

By:

Vijh, Manjula;
Gupta, R. S.;
Pandey, Sujata

Publication type:

Article

Comparative Analysis of Symmetrical/Asymmetrical Vertical Electrolyte‐Insulated Semiconductor Tunnel FET for pH Sensor Application.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 18, p. 1, doi. 10.1002/pssa.202400093

By:

Pundir, Aditya Kumar Singh;
Wadhwa, Girish;
Kaur, Pawandeep;
Mani, Prashant;
Bhandari, Sheetal

Publication type:

Article

The Structural Performance of a Novel Double‐Stacked Heterogeneous Gate Heterojunction Tunneling Field‐Effect Transistor.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 4, p. 1, doi. 10.1002/pssa.202300619

By:

Chen, Qing;
Liu, Hanxiao;
Miao, Ruixia;
Sun, Rong;
Yang, Lulu;
Qi, Zengwei;
Yang, Xiaofeng;
He, Wei

Publication type:

Article

Ge‐ and Ge1−zSnz‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 5, p. 1, doi. 10.1002/pssa.202200587

By:

Shaw, Namrata;
Mukhopadhyay, Bratati

Publication type:

Article

Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction.

Published in:

HOLOS, 2020, v. 1, p. 1, doi. 10.15628/holos.2020.8378

By:

SABAGHI, M.

Publication type:

Article

DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As.

Published in:

HOLOS, 2018, n. 1, p. 288, doi. 10.15628/holos.2018.6173

By:

DOROSTKAR, B.;
MARJANI, S.

Publication type:

Article

Exploring performance characteristics via edge configuration in black phosphorene TFETs.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2025, v. 39, n. 5, p. 1, doi. 10.1142/S021797922540048X

By:

Owlia, Hadi;
Nasrollahnejad, Mohammad Bagher

Publication type:

Article

Vertical GaN/InGaN/GaN heterostructure tunnel field-effect transistor: DC and analog/RF performance.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2023, v. 37, n. 16, p. 1, doi. 10.1142/S0217979223501576

By:

Singh, Sangeeta;
Kumari, Pallavi

Publication type:

Article

Investigation of gate-source overlap impact on the performance of different SOI-TFETs with T-shaped channel.

Published in:: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2022, v. 36, n. 31, p. 1, doi. 10.1142/S0217979222502289
Publication type:: Article

Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1−XAs/GaYIn1−YSb vertical heterojunctionless tunneling field effect transistor.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2021, v. 35, n. 12, p. N.PAG, doi. 10.1142/S0217979221501617

By:

Rajabi, Behzad;
Vadizadeh, Mahdi

Publication type:

Article

Design and Realization of Novel Dual-Input Logic Gates using Virtual Doped Junctionless Double-Gate TFETs.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5901, doi. 10.1007/s11664-025-12011-5

By:

Sharma, Arun Kumar;
Kumar, Ritik;
Gopal, Girdhar;
Johar, Arun Kishor;
Varma, Tarun

Publication type:

Article

Compact Analytical Model for a Raised Buried Oxide Ferroelectric TFET for RF/Analog Applications and Its Implementation as an Inverter.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5883, doi. 10.1007/s11664-025-11988-3

By:

Meriga, Sirisha;
Chowdary, M. Kalpana;
Bhowmick, Brinda;
Ganesh, C.;
Kota, Venkata Ramarao

Publication type:

Article

Design and Performance Analysis of TFET with Extended-Dual-Source Structure-Based Label-Free Biosensor.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 5, p. 4114, doi. 10.1007/s11664-025-11816-8

By:

Ghosh, P.;
Pratap, S.;
Vanlalawmpuia, K.

Publication type:

Article

Design and Performance Evaluation of a Heterojunction GaAs/GaSb PC-TFET for Label-Free Biosensing Applications: Design and Performance Evaluation...: M. K. Bind et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 1691, doi. 10.1007/s11664-024-11643-3

By:

Bind, Mukesh Kumar;
Singh, Sajai Vir;
Nigam, Kaushal Kumar

Publication type:

Article

Insight on Work-Function and Gate Oxide-Engineered Negative-Capacitance TFET for Enhanced Analog/RF Performance and DC Characteristics in High-Frequency Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 12, p. 8126, doi. 10.1007/s11664-024-11519-6

By:

Sachan, Rajeev Kumar;
Vedvrat;
Gupta, Vidyadhar;
Bajpai, Shrish

Publication type:

Article

Correction: Impact of Pocket Layer on Linearity and Analog/RF Performance of InAs-GaSb Vertical Tunnel Field-Effect Transistor.

Published in:

2024

By:

Saravanan, M.;
Parthasarathy, Eswaran

Publication type:

Correction Notice

Analysis of III–V Heterojunction TFET for High-Frequency Analog Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5468, doi. 10.1007/s11664-024-11261-z

By:

Verma, Shubham;
Rai, Manish Kumar;
Yadav, Vimal Kumar Singh;
Rai, Sanjeev

Publication type:

Article

Drain Source-Engineered Double-Gate Tunnel FET for Improved Performance.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3901, doi. 10.1007/s11664-024-11109-6

By:

Kaur, Arashpreet;
Saini, Gaurav

Publication type:

Article

Analysis of Negative Capacitance Source Pocket Double-Gate TFET with Steep Subthreshold and High ON–OFF Ratio.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3861, doi. 10.1007/s11664-024-11102-z

By:

Babu, K. Murali Chandra;
Goel, Ekta

Publication type:

Article

Investigation of a Dual-Drain Technique on a Nanowire Tunnel Field-Effect Transistor for Bio-sensitivity Enhancement.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 3028, doi. 10.1007/s11664-024-11010-2

By:

Raman, Ashish;
Kumar Arya, Susheel;
Kumar, Prateek;
Ranjan, Ravi

Publication type:

Article

Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET).

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2999, doi. 10.1007/s11664-024-10997-y

By:

Singh, Omendra Kr;
Dhandapani, Vaithiyanathan;
Kaur, Baljit

Publication type:

Article

Impact of Noise and Interface Trap Charge on a Heterojunction Dual-Gate Vertical TFET Device.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 4, p. 2181, doi. 10.1007/s11664-024-10927-y

By:

Nasani, Karthik;
Bhowmick, Brinda;
Pukhrambam, Puspa Devi

Publication type:

Article

An Improved Z-Shaped Dual-Material-Gate DM-SDZ-TFET Biosensor for Label-Free Detection.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 3, p. 1445, doi. 10.1007/s11664-023-10887-9

By:

Bitra, Jayalakshmi;
Komanapalli, Gurumurthy

Publication type:

Article

Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 3, p. 1142, doi. 10.1007/s11664-023-10852-6

By:

Pathak, Priyam;
Deb, Deepjyoti;
Nath, Dwipayan;
Das, Prachuryya Subash;
Choudhury, Hirakjyoti;
Goswami, Rupam

Publication type:

Article

Analysis of the Impact of Interface Trap Charges on the Analog/RF Performance of a Graphene Nanoribbon Vertical Tunnel FET.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 10, p. 6825, doi. 10.1007/s11664-023-10615-3

By:

Liana, Zohming;
Choudhuri, Bijit;
Bhowmick, Brinda

Publication type:

Article

Impact of Temperature on the Reliability of UTB-DG-FE-TFETs and Their RF/Analog and Linearity Parameter Dependence.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 9, p. 6293, doi. 10.1007/s11664-023-10556-x

By:

Gopal, Girdhar;
Varma, Tarun

Publication type:

Article

An Extended-Source Tunneling-FET with Gate-Overlapped n+-Doped Pocket.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 9, p. 5980, doi. 10.1007/s11664-023-10524-5

By:

Meshkin, Reza

Publication type:

Article

Comparative Investigation of Different Doping Techniques in TMD Tunnel FET for Subdeca Nanometer Technology Nodes.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5327, doi. 10.1007/s11664-023-10505-8

By:

Singh, Niraj Kumar;
Sahoo, Manodipan

Publication type:

Article