Works matching DE "TUNNEL diodes"

Results: 209

Characterization of Tunnel Diode Oscillator for Qubit Readout Applications.

Published in:

Journal of Low Temperature Physics, 2025, v. 219, n. 5, p. 282, doi. 10.1007/s10909-025-03293-4

By:

Grytsenko, Ivan;
van Haagen, Sander;
Rybalko, Oleksiy;
Jennings, Asher;
Mohan, Rajesh;
Tian, Yiran;
Kawakami, Erika

Publication type:

Article

Rotary Topological Defects in an Oscillator Lattice Loop and Their Injection Locked Properties.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 6, p. 3767, doi. 10.1002/cta.4316

By:

Hirosawa, Shunto;
Narahara, Koichi

Publication type:

Article

DC accelerated aging behavior of Co-Dy-Nb doped Zn-V-M-based varistors with sintering process.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 4, p. 444, doi. 10.1007/s10854-010-0157-0

By:

Choon-Woo Nahm

Publication type:

Article

Efficient approximation algorithm for the Schrödinger–Possion system.

Published in:

Numerical Methods for Partial Differential Equations, 2021, v. 37, n. 1, p. 422, doi. 10.1002/num.22534

By:

He, Xuefei;
Wang, Kun

Publication type:

Article

A Method of Measuring the Power of Sub-Terahertz and Terahertz Radiation Using Resonant Tunneling Diodes.

Published in:

Measurement Techniques, 2013, v. 56, n. 8, p. 856, doi. 10.1007/s11018-013-0296-9

By:

Izmailov, G. N.;
Mityagin, Yu. A.;
Murzin, V. N.;
Savinov, S. A.;
Shmelev, S. S.;
Apostolova, E. M.

Publication type:

Article

Analysis of kink reduction and reliability issues in low-voltage DTD-based SOI TFET.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 3, p. 130, doi. 10.1049/mnl.2019.0427

By:

Ghosh, Puja;
Bhowmick, Brinda

Publication type:

Article

Pressure Sensitivity of Electron Emission from SiOx Tunneling Diodes and their Outstanding Emission Performance under Rough Vacuum.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200216

By:

Zhan, Fangyuan;
Li, Zhiwei;
Yang, Wei;
Wei, Xianlong

Publication type:

Article

Plasmonic Tunnel Diode and Photodetector based on Layer‐Stacked AuNP‐Nanomembrane/p‐Si Heterojunction.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101251

By:

Xu, Chen;
Li, Chuanping;
Jin, Yongdong

Publication type:

Article

ReS2/h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 1, p. 1, doi. 10.1002/aelm.202000925

By:

Mukherjee, Bablu;
Hayakawa, Ryoma;
Watanabe, Kenji;
Taniguchi, Takashi;
Nakaharai, Shu;
Wakayama, Yutaka

Publication type:

Article

Resonant Tunneling and Negative Differential Resistance in Black Phosphorus Vertical Heterostructures.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000318

By:

Xu, Kai;
Wynne, Eric;
Zhu, Wenjuan

Publication type:

Article

High‐Performance On‐Chip Electron Sources Based on Electroformed Silicon Oxide.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000268

By:

Yang, Wei;
Li, Zhiwei;
Wang, Yuwei;
Shen, Jun;
Wei, Dapeng;
Wei, Xianlong

Publication type:

Article

High Performance Multiwall Carbon Nanotube-Insulator-Metal Tunnel Diode Arrays for Optical Rectification.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 3, p. 1, doi. 10.1002/aelm.201700446

By:

Anderson, Erik C.;
Bougher, Thomas L.;
Cola, Baratunde A.

Publication type:

Article

Probe-assisted spin manipulation in one-dimensional quantum dots.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 6, p. 366, doi. 10.1002/pssr.201510074

By:

Gindikin, Yasha;
Sablikov, Vladimir A.

Publication type:

Article

Resonant Scattering and Energy Relaxation in Quantum Dot Systems.

Published in:

Advances in Condensed Matter Physics, 2017, p. 1, doi. 10.1155/2017/4396915

By:

Larkin, I. A.;
Vagov, A.

Publication type:

Article

Modeling of the Spin Currents in Resonant Tunneling Diodes Based on Ferromagnetic Semiconductor Spacers.

Published in:

Journal of Superconductivity & Novel Magnetism, 2019, v. 32, n. 6, p. 1799, doi. 10.1007/s10948-018-4880-8

By:

Dakhlaoui, Hassen;
Almansour, Shaffa

Publication type:

Article

Peculiarities in optical response of hybrid-barrier GaSb/InAs/AlSb resonant tunneling diode structure.

Published in:

Optica Applicata, 2021, v. 51, n. 2, p. 171, doi. 10.37190/oa210202

By:

DYKSIK, M.;
MOTYKA, M.;
PFENNING, A.;
HARTMANN, F.;
WEIH, R.;
WORSCHECH, L.;
HÖFLING, S.;
SĘK, G.

Publication type:

Article

Superior peak-to-valley current ratio in Esaki diode by utilizing a quantum well.

Published in:

Optical & Quantum Electronics, 2024, v. 56, n. 1, p. 1, doi. 10.1007/s11082-023-05632-9

By:

Bayat, Ramin Nouri;
Abbasi, Abdollah;
Orouji, Ali Asghar

Publication type:

Article

Design and analysis of a nano-rectenna based on multi-insulator tunnel barrier for solar energy harvesting.

Published in:

Optical & Quantum Electronics, 2022, v. 54, n. 3, p. 1, doi. 10.1007/s11082-021-03471-0

By:

Hamied, Fatma M. Abdel;
Mahmoud, Korany R.;
Hussein, Mohamed;
Obayya, Salah S. A.

Publication type:

Article

Travelling wave solutions and simulation of the Lonngren wave equation for tunnel diode.

Published in:

Optical & Quantum Electronics, 2021, v. 53, n. 8, p. 1, doi. 10.1007/s11082-021-03091-8

By:

Duran, Serbay

Publication type:

Article

Simulink implementation of a new optoelectronic integrated circuit: stability analysis and infinite-scroll attractor.

Published in:

Optical & Quantum Electronics, 2021, v. 53, n. 7, p. 1, doi. 10.1007/s11082-021-02990-0

By:

Essebe, D. E.;
Mengue, A. D.;
Essimbi, B. Z.

Publication type:

Article

Nanoarray of Vivaldi Rectenna for Infrared-energy Harvesting.

Published in:

Applied Computational Electromagnetics Society Journal, 2023, v. 38, n. 7, p. 513, doi. 10.13052/2023.ACES.J.380707

By:

Amara, Wided;
Alzahrani, Abdelaziz;
Mersani, Ameni;
Oueslati, Donia;
Elsharabasy, Ahmed;
Hakim, Bandar;
Rmili, Hatem;
Elsherbeni, Atef

Publication type:

Article

Superconducting spintronic tunnel diode.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-29990-2

By:

Strambini, E.;
Spies, M.;
Ligato, N.;
Ilić, S.;
Rouco, M.;
González-Orellana, Carmen;
Ilyn, Maxim;
Rogero, Celia;
Bergeret, F. S.;
Moodera, J. S.;
Virtanen, P.;
Heikkilä, T. T.;
Giazotto, F.

Publication type:

Article

Discovery of quantum phases in the Shastry-Sutherland compound SrCu2(BO3)2 under extreme conditions of field and pressure.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-30036-w

By:

Shi, Zhenzhong;
Dissanayake, Sachith;
Corboz, Philippe;
Steinhardt, William;
Graf, David;
Silevitch, D. M.;
Dabkowska, Hanna A.;
Rosenbaum, T. F.;
Mila, Frédéric;
Haravifard, Sara

Publication type:

Article

Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 355, doi. 10.1134/S1063782620030112

By:

Kalinovskii, V. S.;
Kontrosh, E. V.;
Klimko, G. V.;
Ivanov, S. V.;
Yuferev, V. S.;
Ber, B. Y.;
Kazantsev, D. Y.;
Andreev, V. M.

Publication type:

Article

Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1238, doi. 10.1134/S1063782619090203

By:

Shengurov, V. G.;
Filatov, D. O.;
Denisov, S. A.;
Chalkov, V. Yu.;
Alyabina, N. A.;
Zaitsev, A. V.

Publication type:

Article

Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer.

Published in:

Semiconductors, 2019, v. 53, n. 6, p. 833, doi. 10.1134/S1063782619060034

By:

Banshchikov, A. G.;
Illarionov, Yu. Yu.;
Vexler, M. I.;
Wachter, S.;
Sokolov, N. S.

Publication type:

Article

p-Si/nano-SiO/ n-Si capacitor-based tunnel diode with negative differential resistance and a quartz resonator.

Published in:

Semiconductors, 2014, v. 48, n. 10, p. 1381, doi. 10.1134/S1063782614100145

By:

Kareva, G.;
Vexler, M.

Publication type:

Article

A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1213, doi. 10.1134/S1063782609090206

By:

Vinokurov, D. A.;
Ladugin, M. A.;
Marmalyuk, A. A.;
Padalitsa, A. A.;
Pikhtin, N. A.;
Simakov, V. A.;
Sukharev, A. V.;
Fetisova, N. V.;
Shamakhov, V. V.;
Tarasov, I. S.

Publication type:

Article

Absolute negative resistance and multivaluedness on current-voltage characteristics of tunnel diodes.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 495, doi. 10.1134/S1063782609040162

By:

Aliev, K. M.;
Kamilov, I. K.;
Ibragimov, Kh. O.;
Abakarova, N. S.

Publication type:

Article

Current-voltage characteristics of Al/SiO2/ p-Si MOS tunnel diodes with a spatially nonuniform oxide thickness.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1109, doi. 10.1134/S1063782606090223

By:

Vexler, M. I.;
Tyaginov, S. E.;
Shulekin, A. F.;
Grekhov, I. V.

Publication type:

Article

High-Frequency Nonlinear Response of Double-Well Nanostructures.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1071, doi. 10.1134/1.2042601

By:

Elesin, V. F.;
Kateev, I. Yu.

Publication type:

Article

Determination of Gallium Concentration in Germanium Doped Using Neutron-Induced Nuclear Transmutation from Measurements of Resistivity in the Region of Hopping Conductivity.

Published in:

Semiconductors, 2004, v. 38, n. 3, p. 273, doi. 10.1134/1.1682325

By:

O. P. Ermolaev;
T. Yu. Mikul'chik, J.

Publication type:

Article

Conditions for Negative Differential Resistance and Switching in a Tunnel Diode under the Effect of an External Microwave Signal.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 550, doi. 10.1134/1.1188026

By:

Usanov, D. A.;
Skripal’, A. V.;
Ugryumova, N. V.;
Venig, S. B.;
Orlov, V. E.

Publication type:

Article

Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3585, doi. 10.1007/s11664-018-6203-z

By:

Abbasian, Sobhan;
Sabbaghi-Nadooshan, Reza

Publication type:

Article

Investigations of 2.9-GHz Resonant Microwave-Sensitive Ag/MgO/Ge/Ag Tunneling Diodes.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 12, p. 3451, doi. 10.1007/s11664-013-2740-7

By:

Qasrawi, A.F.;
Khanfar, H.K.

Publication type:

Article

Fermi Velocity Modulation Induced Low‐Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling diode.

Published in:

Annalen der Physik, 2021, v. 533, n. 11, p. 1, doi. 10.1002/andp.202100121

By:

Sattari‐Esfahlan, Seyed Mehdi;
Ilatikhameneh, Hesameddin;
Fouladi‐Oskouei, Javad

Publication type:

Article

TEMPERATURE DEPENDENCE OF SCHOTTKY VERSUS BACKWARD DIODES FOR RADIOMETRY APPLICATIONS.

Published in:

Microwave & Optical Technology Letters, 1992, v. 5, n. 7, p. 295, doi. 10.1002/mop.4650050702

By:

De Maagt, Peter J.;
Buss, Tom F.;
Van de Roer, Theo G.

Publication type:

Article

The Feigenbaum-Sharkovskii-Magnitskii scenario of transition to chaos in a circuit with a tunnel diode.

Published in:

Technical Physics, 2015, v. 60, n. 8, p. 1252, doi. 10.1134/S1063784215080101

By:

Ibragimov, Kh.;
Aliev, K.;
Abakarova, N.

Publication type:

Article

A Study of The Exact Solutions and Conservation Laws of The Classical Lonngren Wave Equation for Communication Signals.

Published in:

Malaysian Journal of Mathematical Sciences, 2024, v. 18, n. 2, p. 209, doi. 10.47836/mjms.18.2.01

By:

Lephoko, M. Y. T.;
Khalique, C. M.

Publication type:

Article

Electrothermal Monte Carlo Simulation of a GaAs Resonant Tunneling Diode.

Published in:

Axioms (2075-1680), 2023, v. 12, n. 2, p. 216, doi. 10.3390/axioms12020216

By:

Muscato, Orazio

Publication type:

Article

Dynamical Behavior of a Stacked Blue Laser Diode Consisting of Two Active Regions with Wide InGaN Quantum Wells and Two Tunnel Junctions.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400071

By:

Tepaβ, Jannina;
Uhlig, Lukas;
Hajdel, Mateusz;
Siekacz, Marcin;
Muziol, Grzegorz;
Schwarz, Ulrich Theodor

Publication type:

Article

Experimental and Theoretical Investigation of Collector Spacer and Doping Profile on Triple‐Barrier Resonant Tunneling Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300575

By:

Mutlu, Enes;
Grygoriev, Anton;
Clochiatti, Simone;
Kress, Robin;
Preuss, Christian;
Possberg, Alexander;
Prost, Werner;
Weimann, Nils

Publication type:

Article

Enhancement of NiOx/Poly‐Si Contact Performance by Insertion of an Ultrathin Metallic Ni Interlayer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 13, p. 1, doi. 10.1002/pssa.202200882

By:

Lange, Stefan;
Fett, Bastian;
Kabakli, Özde S.;
Adner, David;
Kroyer, Thomas;
Bogati, Shankar;
Schulze, Patricia S. C.;
Herbig, Bettina;
Hagendorf, Christian;
Sextl, Gerhard;
Mandel, Karl

Publication type:

Article

Characteristics of Series‐Connected Resonant Tunneling Diode‐Pair Configuration for High Output Power Operation.

Published in:: Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 4, p. 1, doi. 10.1002/pssa.202100420
Publication type:: Article

Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 3, p. 1, doi. 10.1002/pssa.202000495

By:

Nagase, Masanori;
Takahashi, Tokio;
Shimizu, Mitsuaki

Publication type:

Article

About 335 nm Ultraviolet Emissions Obtained from Simple Metal–Insulator–Semiconductor Light‐Emitting Tunnel Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 2, p. 1, doi. 10.1002/pssa.202000524

By:

Lin, Chen-Sheng;
Allsopp, Duncan W. E.;
Cavanagh, Kate;
Tsui, Hei Chit Leo;
Yu, Ling-Shan;
Wang, Wang-Nan;
Mihai, Andrei;
Zou, Bin;
Moram, Michelle A.

Publication type:

Article

Fabrication and Characterization of Multiquantum Shell Light‐Emitting Diodes with Tunnel Junction.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900774

By:

Murakami, Hideki;
Suzuki, Atsushi;
Nokimura, Kyohei;
Takebayashi, Minoru;
Goto, Nanami;
Terazawa, Mizuki;
Lu, Weifang;
Sone, Naoki;
Iida, Kazuyoshi;
Ohya, Masaki;
Kamiyama, Satoshi;
Takeuchi, Tetsuya;
Iwaya, Motoaki;
Akasaki, Isamu

Publication type:

Article

Control of current polarity in concentric metal–insulator-semiconductor tunnel diode (MISTD) structures by designed coupling rings.

Published in:

Applied Physics A: Materials Science & Processing, 2025, v. 131, n. 1, p. 1, doi. 10.1007/s00339-024-08139-6

By:

Kung, Tai-Ming;
Hwu, Jenn-Gwo

Publication type:

Article

Enhanced coupling current in center MIS tunnel diode by effective control of the edge trapping in ring with Al2O3/SiO2 gate stack.

Published in:

Applied Physics A: Materials Science & Processing, 2024, v. 130, n. 1, p. 1, doi. 10.1007/s00339-023-07192-x

By:

Kao, Chi-Yi;
Lin, Jin-Cheng;
Hwu, Jenn-Gwo

Publication type:

Article

Tunneling in matched AlGaAs/GaAsBiN superlattices.

Published in:

Applied Physics A: Materials Science & Processing, 2022, v. 128, n. 5, p. 1, doi. 10.1007/s00339-022-05513-0

By:

Rebey, A.;
Mbarki, M.;
Rebei, H.;
Messaoudi, S.

Publication type:

Article