Works matching DE "TRANSISTORS testing"

Results: 17

Electric-field thermopower modulation in SrTiO<sub>3</sub>-based field-effect transistors.

Published in:

Journal of Materials Science, 2013, v. 48, n. 7, p. 2797, doi. 10.1007/s10853-012-6856-6

By:

Ohta, Hiromichi

Publication type:

Article

Comprehensive analysis of the effects of bending strain on GFET on ultra-flat flexible PI substrate using varnish PI.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 3, p. 249, doi. 10.1049/mnl.2018.5448

By:

Kangmin Kim;
Seulgi Park;
Ohyun Kim

Publication type:

Article

Electrical and photo-electrical properties of MoS 2 nanosheets with and without an Al 2 O 3 capping layer under various environmental conditions.

Published in:

Science & Technology of Advanced Materials, 2016, v. 17, n. 1, p. 166, doi. 10.1080/14686996.2016.1167571

By:

Khan, Muhammad Farooq;
Nazir, Ghazanfar;
lermolenko, Volodymyr M.;
Eom, Jonghwa

Publication type:

Article

Stability and band offsets between Si and LaAlO.

Published in:

European Physical Journal B: Condensed Matter, 2017, v. 90, n. 9, p. 1, doi. 10.1140/epjb/e2017-80168-6

By:

Wang, Jianli;
Pu, Long;
Han, Yujia;
Wu, Shuyin;
Tang, Gang;
Guo, Sandong;
Stampfl, Catherine

Publication type:

Article

Improvement of Au‐Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin‐Ti Layer and Low Temperature Annealing.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 13, p. 1, doi. 10.1002/pssa.201700825

By:

Yoshida, Takahiro;
Egawa, Takashi

Publication type:

Article

An Efficient 5-Input Exclusive-OR Circuit Based on Carbon Nanotube FETs.

Published in:

ETRI Journal, 2014, v. 36, n. 1, p. 89, doi. 10.4218/etrij.14.0113.0051

By:

Zarhoun, Ronak;
Moaiyeri, Mohammad Hossein;
Farahani, Samira Shirinabadi;
Navi, Keivan

Publication type:

Article

AlN/GaN heterostructures for normally-off transistors.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 379, doi. 10.1134/S1063782617030277

By:

Zhuravlev, K.;
Malin, T.;
Mansurov, V.;
Tereshenko, O.;
Abgaryan, K.;
Reviznikov, D.;
Zemlyakov, V.;
Egorkin, V.;
Parnes, Ya.;
Tikhomirov, V.;
Prosvirin, I.

Publication type:

Article

Study of structural and electrical properties of ZnO thin film for Thin Film Transistor (TFT) applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 21, p. 16013, doi. 10.1007/s10854-017-7500-7

By:

Kandpal, Kavindra;
Gupta, Navneet

Publication type:

Article

Electrical Properties of Oxide TFT with an IGZO/AlO<sub>x</sub> Stack Grown by Solution-Based Non-Vacuum Mist Chemical Vapour Deposition.

Published in:

2012

By:

Kawaharamura, Toshiyuki;
Wang, Dapeng;
Furuta, Mamoru

Publication type:

Other

Accelerating Phase Shifting Technique in Quantitative Differential Interference Contrast System for Critical Dimension Measurement of TFT Substrate.

Published in:

SID Symposium Digest of Technical Papers, 2012, v. 43, n. 1, p. 1283, doi. 10.1002/j.2168-0159.2012.tb06034.x

By:

Lin, Wen-Chiuan;
Yu, Sheng-Kang;
Lin, Shih-Chieh

Publication type:

Article

Printed Organic Single-crystal TFTs with Bottom-contact Structure.

Published in:

SID Symposium Digest of Technical Papers, 2012, v. 43, n. 1, p. 1354, doi. 10.1002/j.2168-0159.2012.tb06055.x

By:

Kim, Yong-Hoon;
Yoo, Byungwook;
Oh, Min Suk;
Lim, Chang-Yoon;
Han, Jeong-In;
Heo, Jae-Sang;
Park, Sung Kyu

Publication type:

Article

A Program-Aware Fault-Injection Method for Dependability Evaluation Against Soft-Error Using Genetic Algorithm.

Published in:

Journal of Circuits, Systems & Computers, 2018, v. 27, n. 9, p. -1, doi. 10.1142/S021812661850144X

By:

Arasteh, Bahman

Publication type:

Article

Effects of Stone-Wales Defect Position in Graphene Nanoribbon Field-Effect Transistor.

Published in:

Journal of Nano- & Electronic Physics, 2017, v. 9, n. 6, p. 1, doi. 10.21272/jnep.9(6).06008

By:

Owlia, H.;
Keshavarzi, P.;
Nasrollahnejad, M. B.

Publication type:

Article

The Effect of Dielectric Surface Modification and Heat-treatment on the Performance of Rubrene based Organic Field-effect Transistor.

Published in:

International Journal of Nanoelectronics & Materials, 2019, v. 12, n. 1, p. 105

By:

Parameshwara, S.;
Renukappa, N. M.;
Rajan, J. Sundara

Publication type:

Article

Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol) for the Gate Insulator of Pentacene-Based Thin-Film Transistors.

Published in:

Materials (1996-1944), 2017, v. 10, n. 7, p. 742, doi. 10.3390/ma10070742

By:

Ching-Lin Fan;
Ming-Chi Shang;
Shea-Jue Wang;
Mao-Yuan Hsia;
Win-Der Lee;
Bohr-Ran Huang

Publication type:

Article

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide.

Published in:

Materials (1996-1944), 2017, v. 10, n. 7, p. 702, doi. 10.3390/ma10070702

By:

Noviyana, Imas;
Lestari, Annisa Dwi;
Putri, Maryane;
Mi-Sook Won;
Jong-Seong Bae;
Young-Woo Heo;
Hee Young Lee

Publication type:

Article

Dinaphthotetrathiafulvalene Bisimides: A New Member of the Family of π-Extended TTF Stable p-Type Semiconductors.

Published in:

Chemistry - A European Journal, 2017, v. 23, n. 60, p. 15002, doi. 10.1002/chem.201702657

By:

Yamashita, Masataka;
Kawano, Koki;
Matsumoto, Akinobu;
Aratani, Naoki;
Hayashi, Hironobu;
Suzuki, Mitsuharu;
Zhang, Lei;
Briseno, Alejandro L.;
Yamada, Hiroko

Publication type:

Article