Works matching DE "TRANSISTORS testing"
Results: 17
Electric-field thermopower modulation in SrTiO<sub>3</sub>-based field-effect transistors.
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- Journal of Materials Science, 2013, v. 48, n. 7, p. 2797, doi. 10.1007/s10853-012-6856-6
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- Article
Electrical and photo-electrical properties of MoS 2 nanosheets with and without an Al 2 O 3 capping layer under various environmental conditions.
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- Science & Technology of Advanced Materials, 2016, v. 17, n. 1, p. 166, doi. 10.1080/14686996.2016.1167571
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- Article
Effects of Stone-Wales Defect Position in Graphene Nanoribbon Field-Effect Transistor.
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- Journal of Nano- & Electronic Physics, 2017, v. 9, n. 6, p. 1, doi. 10.21272/jnep.9(6).06008
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- Article
Stability and band offsets between Si and LaAlO.
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- European Physical Journal B: Condensed Matter, 2017, v. 90, n. 9, p. 1, doi. 10.1140/epjb/e2017-80168-6
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- Article
Comprehensive analysis of the effects of bending strain on GFET on ultra-flat flexible PI substrate using varnish PI.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 3, p. 249, doi. 10.1049/mnl.2018.5448
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- Publication type:
- Article
The Effect of Dielectric Surface Modification and Heat-treatment on the Performance of Rubrene based Organic Field-effect Transistor.
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- International Journal of Nanoelectronics & Materials, 2019, v. 12, n. 1, p. 105
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- Publication type:
- Article
An Efficient 5-Input Exclusive-OR Circuit Based on Carbon Nanotube FETs.
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- ETRI Journal, 2014, v. 36, n. 1, p. 89, doi. 10.4218/etrij.14.0113.0051
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- Article
Accelerating Phase Shifting Technique in Quantitative Differential Interference Contrast System for Critical Dimension Measurement of TFT Substrate.
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- SID Symposium Digest of Technical Papers, 2012, v. 43, n. 1, p. 1283, doi. 10.1002/j.2168-0159.2012.tb06034.x
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- Article
Electrical Properties of Oxide TFT with an IGZO/AlO<sub>x</sub> Stack Grown by Solution-Based Non-Vacuum Mist Chemical Vapour Deposition.
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- 2012
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- Publication type:
- Other
Printed Organic Single-crystal TFTs with Bottom-contact Structure.
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- SID Symposium Digest of Technical Papers, 2012, v. 43, n. 1, p. 1354, doi. 10.1002/j.2168-0159.2012.tb06055.x
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- Publication type:
- Article
AlN/GaN heterostructures for normally-off transistors.
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- Semiconductors, 2017, v. 51, n. 3, p. 379, doi. 10.1134/S1063782617030277
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- Publication type:
- Article
Study of structural and electrical properties of ZnO thin film for Thin Film Transistor (TFT) applications.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 21, p. 16013, doi. 10.1007/s10854-017-7500-7
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- Publication type:
- Article
Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol) for the Gate Insulator of Pentacene-Based Thin-Film Transistors.
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- Materials (1996-1944), 2017, v. 10, n. 7, p. 742, doi. 10.3390/ma10070742
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- Publication type:
- Article
High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide.
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- Materials (1996-1944), 2017, v. 10, n. 7, p. 702, doi. 10.3390/ma10070702
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- Publication type:
- Article
Dinaphthotetrathiafulvalene Bisimides: A New Member of the Family of π-Extended TTF Stable p-Type Semiconductors.
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- Chemistry - A European Journal, 2017, v. 23, n. 60, p. 15002, doi. 10.1002/chem.201702657
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- Publication type:
- Article
A Program-Aware Fault-Injection Method for Dependability Evaluation Against Soft-Error Using Genetic Algorithm.
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- Journal of Circuits, Systems & Computers, 2018, v. 27, n. 9, p. -1, doi. 10.1142/S021812661850144X
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- Publication type:
- Article
Improvement of Au‐Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin‐Ti Layer and Low Temperature Annealing.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 13, p. 1, doi. 10.1002/pssa.201700825
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- Publication type:
- Article