Works matching DE "TRANSISTORS"

Results: 4876

Near‐Perfect Standard Ternary Inverter Based on MoTe2 Homojunction Anti‐Ambipolar Transistor.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 29, p. 1, doi. 10.1002/adfm.202424728

By:

Zhang, Zhe;
Huo, Shida;
Tian, Qijia;
Meng, Fanying;
Yang, Zheyu;
Ma, Yuexuan;
Wang, Yue;
Xie, Yuan;
Hu, Xiaodong;
Gao, Wenchao;
Wu, Enxiu;
Pan, Caofeng

Publication type:

Article

Materials Selection Principles for Designing Electro‐Thermal Neurons.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 11, p. 1, doi. 10.1002/aelm.202400938

By:

Jardali, Fatme;
Chong, Jenny L.;
Yu, Yeonju;
Williams, R. Stanley;
Kumar, Suhas;
Shamberger, Patrick J.;
Brown, Timothy D.

Publication type:

Article

Negative Capacitance and Dirac Source Hybrid Technique MoS2 Field‐Effect Transistors with Enhanced On‐State Current.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 6, p. 1, doi. 10.1002/pssr.202500064

By:

Liu, Menggan;
Gan, Weizhuo;
Wu, Zhenhua;
Chen, Kaifei;
Lu, Wendong;
Liao, Fuxi;
Li, Zihan;
Zhang, Xuanming;
Mao, Naide;
Niu, Jiebin;
Lu, Congyan;
Wang, Jiawei;
Wang, Lingfei;
Geng, Di;
Lu, Nianduan;
Yang, Guanhua;
Li, Ling

Publication type:

Article

Ultrahigh Current Vertical Channel‐All‐Around Indium–Gallium–Zinc–Oxide Field‐Effect Transistors Using Indium–Tin–Oxide Electrode with Sub‐100 nm Critical Dimension.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 6, p. 1, doi. 10.1002/pssr.202500027

By:

Zhang, Chunyu;
Chen, Chuanke;
Tang, Yinzhi;
Zhang, Kaiping;
Lu, Congyan;
Wu, Wanming;
Bai, Ziheng;
Niu, Jiebin;
Zhao, Shengjie;
Liu, Yu;
Lu, Cheng;
Zhang, Peiwen;
Lu, Nianduan;
Yang, Guanhua;
Geng, Di;
Li, Ling

Publication type:

Article

Asymmetric B←N Functionalized Benzothiadiazoles for High‐Performance n‐Type Semiconducting Polymers.

Published in:

Angewandte Chemie, 2025, v. 137, n. 29, p. 1, doi. 10.1002/ange.202507528

By:

Jiao, Kewei;
Song, Wei;
Liu, Di;
Jiang, Zhen;
Yan, Dongsheng;
Zhao, Zhiwei;
Ge, Ziyi;
Liu, Yunqi;
Wang, Yang

Publication type:

Article

Increasing Efficiency of Energy Conversion Systems from Renewable Sources Using Voltage Source Inverters with Soft Switching of Transistors.

Published in:

Energies (19961073), 2025, v. 18, n. 13, p. 3474, doi. 10.3390/en18133474

By:

Mazgaj, Witold;
Szular, Zbigniew

Publication type:

Article

Analyzing Noise Margin Degradation in Subthreshold Nanosheet Transistor Logic Gates: An Interface Quasi-Fermi Potential Model for Interface-trapped Charge Effects.

Published in:

Sensors & Materials, 2025, v. 37, n. 7, Part 1, p. 2793, doi. 10.18494/SAM5534

By:

Liou, Juin J.;
Yimu Yang;
Te-Kuang Chiang

Publication type:

Article

Investigation of Self‐Heating Effect in Inverters: Structural Design and Optimization Design of 14 nm Silicon‐on‐Insulator Fin Field‐Effect Transistor.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 22, n. 10, p. 1, doi. 10.1002/pssa.202400824

By:

Qin, Zhaohui;
Chen, Lan;
Lu, Renjie;
Wang, Yali;
Hao, Xiaoran;
Chen, Rong;
Sun, Yan;
Du, Qin

Publication type:

Article

Stability of VTH and RON in p‐GaN Schottky‐Gate AlGaN/GaN High‐Electron‐Mobility Transistors under Reverse and Gate Bias Stress: Impact of Gate Offset.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 13, p. 1, doi. 10.1002/pssa.202401012

By:

Feng, Chao;
Liu, Xuan;
Li, Haiyang;
Mao, Danfeng;
Wu, Junye;
Wang, Yuhao;
Du, Rongxin;
Hu, Haolin;
Zeng, Wei;
Wang, Xiaoping;
Zhou, David;
Wan, Yuxi

Publication type:

Article

A Novel Embedded Drain Dual‐Gate Tunnel Field Effect Transistor with Drain Dielectric Pocket for Suppressing Ambipolar Effect.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 13, p. 1, doi. 10.1002/pssa.202400946

By:

Chen, Qing;
Wang, Dandan;
Miao, Ruixia;
Yang, Lulu;
Li, Jianwei;
Yang, Xiaofeng;
Zhang, Baojun;
Gu, Jing;
Qi, Zengwei;
Shang, Shiguang

Publication type:

Article

Modeling of Al‐Doped Nanoscale Double‐Material Gate MgZnO/MgO/ZnO High Electron Mobility Transistors for RF and Power Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 11, p. 1, doi. 10.1002/pssa.202400874

By:

Vinothkumar, Karuppiah;
Kaleel Rahuman, Abdul Kader

Publication type:

Article

Extrinsic and Intrinsic Sources of Temperature‐Dependent Transport Hysteresis in 2D Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 11, p. 1, doi. 10.1002/pssa.202400564

By:

Srivastava, Rupali;
Sharma, Kajal;
Singh, Amrita;
Somay, Srest;
Balasubramanian, Krishna

Publication type:

Article

Im hermetisch versiegelten Keramikgehäuse.

Published in:: Elektronik Industrie, 2025, p. 63
Publication type:: Article

Recent Advances in Bioresorbable Biomedical Applications: From Materials to Devices.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 10, p. 1, doi. 10.1002/aelm.202400997

By:

Park, Do Yun;
Lee, Hye‐Min;
Kim, Su‐Hwan;
Sim, Youngmin;
Kang, Yoojin;
Jang, Gyu‐rim;
Kim, Sara;
Kwon, Kyeongha;
Ryu, Hanjun

Publication type:

Article

Low‐Voltage and Stretchable Organic Field Effect Transistor Array Based on Tri‐Layer Elastomer Dielectric for Gas Sensing.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 10, p. 1, doi. 10.1002/aelm.202400981

By:

Zhang, Xiaoying;
Li, Xiangxiang;
Wang, Weiyu;
Jiang, Hongchen;
Zheng, Xinran;
Yang, Huiqi;
Ye, Xin;
Yang, Hui

Publication type:

Article

Interfacial Photogating of Graphene Field‐Effect Transistor for Photosensory Biomolecular Detection.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 7, p. 1, doi. 10.1002/aelm.202400716

By:

Howe, Leslie;
Wang, Yifei;
Ellepola, Kalani H.;
Ho, Vinh X.;
Dohmen, Rosalie L.;
Pinto, Marlo M.;
Hoff, Wouter D.;
Cooney, Michael P.;
Vinh, Nguyen Q.

Publication type:

Article

2D ferroelectric AgInP2Se6 for Ultra‐Steep Slope Transistor with SS Below 10 mV Decade−1.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 7, p. 1, doi. 10.1002/aelm.202400685

By:

Yang, Yujue;
Liu, Zihao;
Liu, Xueting;
Dong, Huafeng;
Zhang, Xin;
Yang, Juehan;
Wu, Fugen;
Li, Jingbo;
Huo, Nengjie

Publication type:

Article

High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-59684-4

By:

Ghosh, Subir;
Sadaf, Muhtasim Ul Karim;
Graves, Andrew R.;
Zheng, Yikai;
Pannone, Andrew;
Ray, Samriddha;
Cheng, Chung-Yu;
Guevara, Jeremy;
Redwing, Joan M.;
Das, Saptarshi

Publication type:

Article

Interface trap states induced underestimation of Schottky barrier height in metal-MX2 junctions.

Published in:

NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00576-y

By:

Jawa, Himani;
Verreck, Devin;
Sun, Zheng;
Sutar, Surajit;
de la Rosa, Cesar Javier Lockhart;
Kar, Gouri Sankar;
Appenzeller, Joerg

Publication type:

Article

Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumping.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-07995-3

By:

Park, JaeHyeong;
Kim, Hyo-Bae;
Yu, Sang Min;
Kim, Kihwan;
Baeck, Ju Heyuck;
Noh, Jiyong;
Park, Kwon-Shik;
Yoon, Soo-Young;
Ahn, Ji-Hoon;
Oh, Saeroonter

Publication type:

Article

ПІДВИЩЕННЯ ЕФЕКТИВНОСТІ ВИКОРИСТАННЯ КОНДЕНСАТОРІВ КОМУТУЮЧОЇ ЛАНКИ ДВОМОСТОВОГО КОМПЕНСАЦІЙНОГО ПЕРЕТВОРЮВАЧА ЗА РАХУНОК ЗБІЛЬШЕННЯ ЧАСТОТИ СТРУМУ ЇХНЬОГО ПЕРЕЗАРЯДУ.

Published in:

Technical Electrodynamics / Tekhnichna Elektrodynamika, 2025, n. 4, p. 42, doi. 10.15407/techned2025.04.042

By:

Бойко, В. С.

Publication type:

Article

Schmitt Trigger-Based Low Leakage and Half-Select Free Near-Threshold 10T SRAM Architecture.

Published in:

Journal of Circuits, Systems & Computers, 2025, v. 34, n. 15, p. 1, doi. 10.1142/S0218126625503487

By:

Kumar, Appikatla Phani;
Lorenzo, Rohit;
Abbasian, Erfan;
Sachdeva, Ashish

Publication type:

Article

High Performance and PVT Variation Tolerant Design for a Ternary Multiplier Using GNRFET Technology.

Published in:

Circuits, Systems & Signal Processing, 2025, v. 44, n. 7, p. 4559, doi. 10.1007/s00034-025-03034-8

By:

Basha, Shaik Javid;
Elbarbary, Ahmed;
Mahmoud, Haitham A.;
Venkatramana, P.

Publication type:

Article

Reconfigurable Organic Electrochemical Transistors with High Dynamic Ranges for Fully Integrated Physical Reservoir Computing.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 26, p. 1, doi. 10.1002/adfm.202423814

By:

Han, Chungbi;
Kim, Mingyu;
Park, Seong Jun;
Eo, Jung Sun;
Kim, Donghyeok;
Park, Young Ran;
Jung, Sungjune;
Wang, Gunuk

Publication type:

Article

Designing and Optimizing the Structure of Two-Gate — Double Material Organic Transistor Using Numerical Simulation and Multi-Objective Optimization Methods.

Published in:

International Journal of Nanoscience, 2025, v. 24, n. 2/3, p. 1, doi. 10.1142/S0219581X24500236

By:

Fard, Mohammad Heydari;
Karamdel, Javad;
Olyaee, Hassan Ghalami Bavil;
Nazari, Roshanak Rafiei

Publication type:

Article

Effect of Rising Time on AC Stress-Induced Performance Degradation in a-ITGZO Thin-Film Transistors.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 12, p. 880, doi. 10.3390/nano15120880

By:

Kang, Mingu;
Cho, Kyoungah;
Kim, Sangsig

Publication type:

Article

The least squares off-line parameter identification method of half-dead compensated induction motor based on non-kπ3 angle.

Published in:

Electrical Engineering, 2025, v. 107, n. 6, p. 7955, doi. 10.1007/s00202-024-02893-9

By:

Guo, Hongyi;
Yang, Xinsheng;
Diao, Naizhe;
Sun, Xianrui;
Zhang, Haifeng;
Zhao, Xiaolong;
Li, Hao;
Hu, Wenbing;
Song, Chonghui

Publication type:

Article

Design Considerations of an Analog Voltage Mode Readout Circuit for the CMOS-SOI-MEMS Gas Sensor Dubbed GMOS.

Published in:

Micromachines, 2025, v. 16, n. 6, p. 658, doi. 10.3390/mi16060658

By:

Bukshish, Efraim-Lavi;
Bar-Lev, Sharon;
Blank, Tanya;
Nemirovsky, Yael

Publication type:

Article

Miniaturized BAW Filter for Wide Band Application Based on High-Q Factor Active Inductor.

Published in:

Micromachines, 2025, v. 16, n. 6, p. 616, doi. 10.3390/mi16060616

By:

Xu, Zhencheng;
Pan, Jiabei;
Gao, Feng;
Xuan, Weipeng;
Jin, Hao;
Luo, Jikui;
Dong, Shurong

Publication type:

Article

A Novel Efficient CNFET-Based Inexact Full Adder Design for Image Processing Applications.

Published in:

International Journal of Nanoscience, 2021, v. 20, n. 2, p. N.PAG, doi. 10.1142/S0219581X21500162

By:

Mehrabani, Yavar Safaei;
Parsapour, Mona;
Moradi, Mona;
Bagherizadeh, Mehdi

Publication type:

Article

Differentially Graded Junctionless Transistor.

Published in:

International Journal of Nanoscience, 2019, v. 18, n. 1, p. N.PAG, doi. 10.1142/S0219581X18500163

By:

Surana, Neelam;
Ghosh, Bahniman;
Akram, M. W.;
Tripathi, Ball Mukund Mani

Publication type:

Article

Multi-Threshold Voltage CMOS Design for Low-Power Half Adder Circuit.

Published in:

International Journal of Nanoscience, 2015, v. 14, n. 5/6, p. 1550022-1, doi. 10.1142/S0219581X15500222

By:

Kushwah, Preeti;
Khandelwal, Saurabh;
Akashe, Shyam

Publication type:

Article

Analysis and Simulation of a Low-Leakage Analog Single Gate and FinFET Circuits.

Published in:

International Journal of Nanoscience, 2014, v. 13, n. 2, p. -1, doi. 10.1142/S0219581X14500124

By:

Chauhan, Manorama;
Kushwah, Ravindra Singh;
Shrivastava, Pavan;
Akashe, Shyam

Publication type:

Article

A SILICON GERMANIUM GRADED JUNCTIONLESS TRANSISTOR WITH LOW OFF CURRENT.

Published in:

International Journal of Nanoscience, 2013, v. 12, n. 6, p. -1, doi. 10.1142/S0219581X13500439

By:

SURANA, NEELAM;
GHOSH, BAHNIMAN;
TRIPATHY, BALL MUKUND MANI;
SALIMATH, AKSHAY KUMAR

Publication type:

Article

A HIGH-LEVEL TECHNIQUE FOR ESTIMATION AND OPTIMIZATION OF LEAKAGE POWER FOR FULL ADDER.

Published in:

International Journal of Nanoscience, 2013, v. 12, n. 2, p. -1, doi. 10.1142/S0219581X13500117

By:

SHRIVAS, JAYRAM;
AKASHE, SHYAM;
TIWARI, NITESH

Publication type:

Article

CHARACTERIZATION OF A SURFACE-CHARGE MODULATION ELECTROFLUIDIC TRANSISTOR BY HYDRODYNAMIC MEASUREMENTS.

Published in:

International Journal of Nanoscience, 2012, v. 11, n. 4, p. -1, doi. 10.1142/S0219581X12400212

By:

LAFFITE, GUILLAUME;
ZHENG, XU;
RENAUD, LOUIS;
BESSUEILLE, FRANÇOIS;
CHARLAIX, ELISABETH;
KLEIMANN, PASCAL

Publication type:

Article

SILICON NANOWIRE TRANSISTOR FABRICATED BY AFM NANOLITHOGRAPHY FOLLOWED BY WET CHEMICAL ETCHING PROCESS.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 4, p. 289, doi. 10.1142/S0219581X1000682X

By:

LEW, K. C.;
HUTAGALUNG, SABAR D.

Publication type:

Article

NONEQUILIBRIUM GREEN'S FUNCTION BASED QUANTUM TRANSPORT SIMULATION FOR STRAINED-ENGINEERED NANOSCALE TRANSISTORS IN THE PRESENCE OF ELECTRON-PHONON INTERACTIONS.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 4, p. 327, doi. 10.1142/S0219581X10006909

By:

MAITI, T. K.;
MAITI, C. K.

Publication type:

Article

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 853, doi. 10.1142/S0219581X06005261

By:

XINFAN HUANG;
LIANGCAI WU;
MIN DAI;
LINWEI YU;
WEI LI;
KUNJI CHEN

Publication type:

Article

GATE LENGTH SCALING AND MICROWAVE PERFORMANCE OF DOUBLE GATE NANOTRANSISTORS.

Published in:

International Journal of Nanoscience, 2005, v. 4, n. 5/6, p. 1021, doi. 10.1142/S0219581X05004005

By:

Kranti, Abhinav;
Chung, Tsung Ming;
Raskin, Jean-Pierre

Publication type:

Article

MODELING OF DEEP-SUBMICRON MOSFET DRIVE CURRENT.

Published in:

International Journal of Nanoscience, 2005, v. 4, n. 4, p. 525, doi. 10.1142/S0219581X05003243

By:

FRANCIS, BENISTANT

Publication type:

Article

FIELD-EFFECT TRANSISTOR STRUCTURES WITH QUASI-ONE-DIMENSIONAL CHANNEL.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 161, doi. 10.1142/S0219581X04001948

By:

Rotkin, Slava V.;
Ruda, Harry E.;
Shik, Alexander

Publication type:

Article

Nanoimprinting 3D Patterns.

Published in:

Innovation, 2005, v. 5, n. 2, p. 16

By:

Hong Yee Low

Publication type:

Article

Very‐Low‐Temperature Integrated Complementary Graphene‐Barristor‐Based Inverter for Thin‐Film Transistor Applications.

Published in:

Annalen der Physik, 2018, v. 530, n. 10, p. N.PAG, doi. 10.1002/andp.201800224

By:

Heo, Sunwoo;
Lee, Ho‐In;
Lee, Hyeji;
Kim, Seung‐Mo;
Kim, Kiyung;
Kim, Yun Ji;
Kim, So‐Young;
Kim, Ji Hwan;
Yoon, Myung‐Han;
Lee, Byoung Hun

Publication type:

Article

Graphene Ribbon Growth on Structured Silicon Carbide.

Published in:

Annalen der Physik, 2017, v. 529, n. 11, p. n/a, doi. 10.1002/andp.201700052

By:

Stöhr, Alexander;
Baringhaus, Jens;
Aprojanz, Johannes;
Link, Stefan;
Tegenkamp, Christoph;
Niu, Yuran;
Zakharov, Alexei A.;
Chen, Chaoyu;
Avila, José;
Asensio, Maria C.;
Starke, Ulrich

Publication type:

Article

Light-switching-light optical transistor based on metallic nanoparticle cross-chains geometry incorporating Kerr nonlinearity.

Published in:

Annalen der Physik, 2016, v. 528, n. 7/8, p. 560, doi. 10.1002/andp.201500344

By:

AbdelMalek, Fathi;
Aroua, Walid;
Haxha, Shyqyri;
Flint, Ian

Publication type:

Article

Efficient Charge Injection in Organic Field-Effect Transistors Enabled by Low-Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 25, p. 4456, doi. 10.1002/adfm.201600482

By:

Gao, Yuanhong;
Shao, Youdong;
Yan, Lijia;
Li, Hao;
Su, Yantao;
Meng, Hong;
Wang, Xinwei

Publication type:

Article

Metal/Organic Interfaces: Efficient Charge Injection in Organic Field-Effect Transistors Enabled by Low-Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer (Adv. Funct. Mater. 25/2016).

Published in:

Advanced Functional Materials, 2016, v. 26, n. 25, p. 4615, doi. 10.1002/adfm.201670160

By:

Gao, Yuanhong;
Shao, Youdong;
Yan, Lijia;
Li, Hao;
Su, Yantao;
Meng, Hong;
Wang, Xinwei

Publication type:

Article

Tailoring Morphology and Structure of Inkjet-Printed Liquid-Crystalline Semiconductor/Insulating Polymer Blends for High-Stability Organic Transistors.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 18, p. 3003, doi. 10.1002/adfm.201504786

By:

Kwak, Donghoon;
Choi, Hyun Ho;
Kang, Boseok;
Kim, Do Hwan;
Lee, Wi Hyoung;
Cho, Kilwon

Publication type:

Article

Solution-Processed Crystalline n-Type Organic Transistors Stable against Electrical Stress and Photooxidation.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 14, p. 2365, doi. 10.1002/adfm.201502423

By:

Yi, Hee Taek;
Chen, Zhihua;
Facchetti, Antonio;
Podzorov, Vitaly

Publication type:

Article