Works matching DE "TRANSISTOR radios"


Results: 17
    1

    Solution-Processable Dithienothiophenoquinoid (DTTQ) Structures for Ambient-Stable n-Channel Organic Field Effect Transistors.

    Published in:
    Advanced Functional Materials, 2017, v. 27, n. 21, p. n/a, doi. 10.1002/adfm.201606761
    By:
    • Vegiraju, Sureshraju;
    • He, Guan‐Yu;
    • Kim, Choongik;
    • Priyanka, Pragya;
    • Chiu, Yen‐Ju;
    • Liu, Chiao‐Wei;
    • Huang, Chu‐Yun;
    • Ni, Jen‐Shyang;
    • Wu, Ya‐Wen;
    • Chen, Zhihua;
    • Lee, Gene‐Hsiang;
    • Tung, Shih‐Huang;
    • Liu, Cheng‐Liang;
    • Chen, Ming‐Chou;
    • Facchetti, Antonio
    Publication type:
    Article
    2

    Anodized ITO Thin-Film Transistors.

    Published in:
    Advanced Functional Materials, 2014, v. 24, n. 26, p. 4170, doi. 10.1002/adfm.201400263
    By:
    • Shao, Yang;
    • Xiao, Xiang;
    • Wang, Longyan;
    • Liu, Yang;
    • Zhang, Shengdong
    Publication type:
    Article
    3
    4

    Technology to Open the Night.

    Published in:
    Teachers College Record, 1999, v. 101, n. 2, p. 273, doi. 10.1111/0161-4681.00044
    Publication type:
    Article
    5
    6
    7

    Flexible N-type Organic Thin Film Transistors.

    Published in:
    SID Symposium Digest of Technical Papers, 2012, v. 43, n. 1, p. 79, doi. 10.1002/j.2168-0159.2012.tb05714.x
    By:
    • Hung, Wei-Lun;
    • Yang, Ming-Che;
    • Tu, Chia-Hsun;
    • Hung, Shih-Hsing;
    • Hwu, Keh-Long;
    • Hu, Chih-Jen;
    • Huang, Wei-Ming
    Publication type:
    Article
    8
    9
    10

    THANATOPHONICS.

    Published in:
    PAJ: A Journal of Performance & Art, 2013, v. 35, n. 2, p. 20, doi. 10.1162/PAJJ_a_00143
    By:
    • Cirauqui, Manuel
    Publication type:
    Article
    11

    Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal-insulator-semiconductor field-effect transistors and high-electron-mobility transistors

    Published in:
    IET Power Electronics (Wiley-Blackwell), 2015, v. 8, n. 12, p. 2322, doi. 10.1049/iet-pel.2015.0009
    By:
    • Longobardi, Giorgia;
    • Udrea, Florin;
    • Sque, Stephen;
    • Croon, Jeroen;
    • Hurkx, Fred;
    • Šonský, Jan
    Publication type:
    Article
    12
    13
    14
    15
    16
    17