Works matching DE "THROUGH-silicon via"

Results: 96

Signal Integrity Analysis in Carbon Nanotube Based Through-Silicon Via.

Published in:

Active & Passive Electronic Components, 2014, p. 1, doi. 10.1155/2014/524107

By:

Majumder, Manoj Kumar;
Kumari, Archana;
Kaushik, Brajesh Kumar;
Manhas, Sanjeev Kumar

Publication type:

Article

Surface second harmonic generation induced by 3D strain fields.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 2, p. 218, doi. 10.1002/pssb.201552517

By:

Mendoza, Bernardo S.;
Cho, Yujin;
Shafiei, Farbod;
Downer, Michael C.

Publication type:

Article

Fast power density aware three‐dimensional integrated circuit floorplanning for hard macroblocks using best operator combination genetic algorithm.

Published in:

International Journal of Circuit Theory & Applications, 2023, v. 51, n. 10, p. 4879, doi. 10.1002/cta.3672

By:

Meitei, Naorem Yaipharenba;
Baishnab, Krishna Lal;
Trivedi, Gaurav

Publication type:

Article

AN ANALYTICAL THERMAL MODEL FOR THE 3-D INTEGRATED CIRCUIT WITH NEW-TYPE THROUGH SILICON VIA.

Published in:

Thermal Science, 2023, v. 27, n. 3B, p. 2391, doi. 10.2298/TSCI220621140X

By:

XU, Zhao-Pei;
WANG, Kang-Jia

Publication type:

Article

TSV‐based common‐mode noise‐suppressing filter design and implementation.

Published in:

Electronics Letters (Wiley-Blackwell), 2022, v. 58, n. 6, p. 243, doi. 10.1049/ell2.12412

By:

Li, Zhensong;
Liu, Huan;
Sun, Yunheng;
Yang, Yang;
Miao, Min;
Ma, Shenglin;
Jin, Yufeng

Publication type:

Article

Fabrication and measurement of 3D LPF based on coaxial TSV.

Published in:

Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 2, p. 102, doi. 10.1049/el.2018.7325

By:

Fengjuan Wang;
He Li;
Ningmei Yu

Publication type:

Article

基于TSV技术的3D电感的设计与实现.

Published in:

Electronic Components & Materials, 2018, v. 37, n. 6, p. 49, doi. 10.14106/j.cnki.1001-2028.2018.06.010

By:

薛宇;
张洪泽;
刘鹏飞;
朱健

Publication type:

Article

STTAR: A Traffic- and Thermal-Aware Adaptive Routing for 3D Network-on-Chip Systems.

Published in:

Computers, Materials & Continua, 2022, v. 72, n. 3, p. 5531, doi. 10.32604/cmc.2022.027177

By:

Juan Fang;
Yunfei Mao;
Min Cai;
Li'ang Zhao;
Huijie Chen;
Wei Xiang

Publication type:

Article

SIP with TSV for Class 1 Medical Devices.

Published in:

Journal of Microelectronic & Electronic Packaging, 2016, v. 13, n. 1, p. 1, doi. 10.4071/imaps.497

By:

Youngtak Lee;
Doug Link

Publication type:

Article

Impact of Grain Structure and Material Properties on Via Extrusion in 3D Interconnects.

Published in:

Journal of Microelectronic & Electronic Packaging, 2015, v. 12, n. 3, p. 118, doi. 10.4071/imaps.456

By:

Tengfei Jiang;
Chenglin Wu;
Im, Jay;
Rui Huang;
Ho, Paul S.

Publication type:

Article

Thermal Performance of 3D IC Integration with Through-Silicon Via (TSV).

Published in:

Journal of Microelectronic & Electronic Packaging, 2012, v. 9, n. 2, p. 97, doi. 10.4071/imaps.309

By:

Heng-Chieh Chien;
Lau, John H.;
Yu-Lin Chao;
Ra-Min Tain;
Ming-Ji Dai;
Sheng-Tsai Wu;
Wei-Chung Lo;
Ming-Jer Kao

Publication type:

Article

Boundary Layers Defect Diagnosis and Analysis of Through Silicon Via (TSV).

Published in:

International Journal of Performability Engineering, 2019, v. 15, n. 1, p. 97, doi. 10.23940/ijpe.19.01.p10.97106

By:

Yuan Chen;
Peng Zhang;
Kuiliang Xia;
Hongzhong Huang

Publication type:

Article

Assessment of through‐silicon‐vias with different configurations of ground vias and accounting for substrate losses.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2021, v. 31, n. 10, p. 1, doi. 10.1002/mmce.22811

By:

Rodríguez‐Velásquez, Yojanes;
Murphy‐Arteaga, Roberto S.;
Torres‐Torres, Reydezel

Publication type:

Article

Electrical models of through silicon Vias and silicon‐based devices for millimeter‐wave application.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2018, v. 28, n. 9, p. N.PAG, doi. 10.1002/mmce.21447

By:

Liu, Xiaoxian;
Zhu, Zhangming;
Yang, Yintang;
Liu, Yang;
Lu, Qijun;
Yin, Xiangkun

Publication type:

Article

Experimental characterisation of coaxial TSV transistor keep out zones.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 10, p. 1457, doi. 10.1049/mnl.2018.5280

By:

Adamshick, Stephen;
Northrup, Steven;
Liehr, Michael

Publication type:

Article

A Framework for Scalable TSV Assignment and Selection in Three-Dimensional Networks-on-Chips.

Published in:

VLSI Design, 2017, p. 1, doi. 10.1155/2017/9427678

By:

Charif, Amir;
Coelho, Alexandre;
Zergainoh, Nacer-Eddine;
Nicolaidis, Michael

Publication type:

Article

An Introductory Overview of Various Typical Lead-Free Solders for TSV Technology.

Published in:

Inorganics, 2025, v. 13, n. 3, p. 86, doi. 10.3390/inorganics13030086

By:

Choi, Sooyong;
Lim, Sooman;
Hanifah, Muhamad Mukhzani Muhamad;
Matteini, Paolo;
Yusoff, Wan Yusmawati Wan;
Hwang, Byungil

Publication type:

Article

Through-Silicon-Via Pairs Modelling via Compressed Sensing.

Published in:

PIERS Proceedings, 2014, p. 2496

By:

Tao Wang;
Jun Fan;
Yiyu Shi;
Boping Wu

Publication type:

Article

A Short Review of Through-Silicon via (TSV) Interconnects: Metrology and Analysis.

Published in:

Applied Sciences (2076-3417), 2023, v. 13, n. 14, p. 8301, doi. 10.3390/app13148301

By:

Wang, Jintao;
Duan, Fangcheng;
Lv, Ziwen;
Chen, Si;
Yang, Xiaofeng;
Chen, Hongtao;
Liu, Jiahao

Publication type:

Article

A TSV-Structured Room Temperature p-Type TiO 2 Nitric Oxide Gas Sensor.

Published in:

Applied Sciences (2076-3417), 2022, v. 12, n. 19, p. 9946, doi. 10.3390/app12199946

By:

Yeh, Yu-Ming;
Chang, Shoou-Jinn;
Wang, Pin-Hsiang;
Hsueh, Ting-Jen

Publication type:

Article

Editorial for Special Issue on Reliability Analysis of Electrotechnical Devices.

Published in:

Applied Sciences (2076-3417), 2022, v. 12, n. 8, p. 4086, doi. 10.3390/app12084086

By:

Tan, Cher-Ming

Publication type:

Article

Integrated Passive Devices and Switching Circuit Design for a 3D DC/DC Converter up to 60 V.

Published in:

Journal of Circuits, Systems & Computers, 2020, v. 29, n. 03, p. N.PAG, doi. 10.1142/S0218126620500395

By:

Saponara, Sergio;
Ciarpi, Gabriele;
Erlbacher, Tobias;
Rattmann, Gudrun

Publication type:

Article

A TSV Fault-Tolerant Scheme Based on Failure Classification in 3D-NoC.

Published in:

Journal of Circuits, Systems & Computers, 2017, v. 26, n. 4, p. -1, doi. 10.1142/S0218126617500591

By:

Ouyang, Yiming;
Da, Jian;
Wang, Xiumin;
Han, Qianqian;
Liang, Huaguo;
Du, Gaoming

Publication type:

Article

Minimal Buffer Insertion Based Low Power Clock Tree Synthesis for 3D Integrated Circuits.

Published in:

Journal of Circuits, Systems & Computers, 2016, v. 25, n. 11, p. -1, doi. 10.1142/S0218126616501425

By:

Sumanth Kumar, Kamineni;
Reuben, John

Publication type:

Article

Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV).

Published in:

Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-1831-4

By:

Shen, Wen-Wei;
Chen, Kuan-Neng

Publication type:

Article

Quartz resonator assembling with TSV interposer using polymer sealing or metal bonding.

Published in:

Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-541

By:

Shih, Jian-Yu;
Chen, Yen-Chi;
Chiu, Chih-Hung;
Lo, Chung-Lun;
Chang, Chi-Chung;
Chen, Kuan-Neng

Publication type:

Article

Three-Stage Optimization of Pre-Bond Diagnosis of TSV Defects.

Published in:

Journal of Electronic Testing, 2017, v. 33, n. 5, p. 573, doi. 10.1007/s10836-017-5681-x

By:

Zhang, Bei;
Agrawal, Vishwani

Publication type:

Article

TSV-based antenna for on-chip wireless communication.

Published in:

IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2020, v. 14, n. 4, p. 302, doi. 10.1049/iet-map.2019.0431

By:

Pano, Vasil;
Tekin, Ibrahim;
Yuqiao Liu;
Dandekar, Kapil R.;
Taskin, Baris

Publication type:

Article

Admittance extraction and analysis for through silicon vias near edge and at corner of silicon substrate.

Published in:

IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2016, v. 10, n. 12, p. 1345, doi. 10.1049/iet-map.2015.0373

By:

Sheng Liu;
Wanchun Tang;
Cheng Huang;
Jianping Zhu;
Wei Zhuang

Publication type:

Article

A Novel 3D Encapsulation Structure Based on Subwavelength Structure and Inserted Pyrex Glass for RF MEMS Infrared Detectors.

Published in:

Electronics (2079-9292), 2019, v. 8, n. 9, p. 974, doi. 10.3390/electronics8090974

By:

Zhao, Jicong;
Ge, Mingmin;
Song, Chenguang;
Sun, Ling;
Sun, Haiyan

Publication type:

Article

Numerical Laplace Inversion Method for Through-Silicon Via (TSV) Noise Coupling in 3D-IC Design.

Published in:

Electronics (2079-9292), 2019, v. 8, n. 9, p. 1010, doi. 10.3390/electronics8091010

By:

Ait Belaid, Khaoula;
Belahrach, Hassan;
Ayad, Hassan

Publication type:

Article

TSV Technology and High-Energy Heavy Ions Radiation Impact Review.

Published in:

Electronics (2079-9292), 2018, v. 7, n. 7, p. 112, doi. 10.3390/electronics7070112

By:

Tian, Wenchao;
Ma, Tianran;
Liu, Xiaohan

Publication type:

Article

Three-Dimensional Wafer Stacking Using Cu TSV Integrated with 45 nm High Performance SOI-CMOS Embedded DRAM Technology.

Published in:

Journal of Low Power Electronics & Applications, 2014, v. 4, n. 2, p. 77, doi. 10.3390/jlpea4020077

By:

Batra, Pooja;
Skordas, Spyridon;
LaTulipe, Douglas;
Winstel, Kevin;
Kothandaraman, Chandrasekharan;
Himmel, Ben;
Maier, Gary;
He, Bishan;
Gamage, Deepal Wehella;
Golz, John;
Wei Lin;
Vo, Tuan;
Priyadarshini, Deepika;
Hubbard, Alex;
Cauffman, Kristian;
Peethala, Brown;
Barth, John;
Kirihata, Toshiaki;
Graves-Abe, Troy;
Robson, Norman

Publication type:

Article

Coupling capacitance in through-silicon vias:non-homogeneous medium effect.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 2, p. 152, doi. 10.1049/el.2015.3141

By:

Ramadan, T.;
Yahya, E.;
Ismail, Y.;
Dessouky, M.

Publication type:

Article

On-chip trimming circuit based on embedded one-time-programming memory for magnetic wireless interlayer transmission module.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 24, p. 2064, doi. 10.1049/el.2015.2275

By:

Liang-Shun Chang;
Kuei-Hung Shen;
Ming-Jinn Tsai;
Chrong-Jung Lin;
Ya-Chin King

Publication type:

Article

Analytical evaluation of scattering parameters for equivalent circuit of through silicon via array.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 13, p. 1025, doi. 10.1049/el.2015.1265

By:

Cecchetti, R.;
Piersanti, S.;
de Paulis, F.;
Orlandi, A.;
Fan, J.

Publication type:

Article

Simultaneous process self-calibration method using TDC for 3D DDR4 DRAM.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 22, p. 1579, doi. 10.1049/el.2014.1595

By:

Reum Oh;
J. Jang;
J. Kim;
Man Young Sung

Publication type:

Article

BMD impact on silicon fin defect at TSV bottom.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 13, p. 954, doi. 10.1049/el.2014.0974

By:

Dingyou Zhang;
Thangaraju, Sarasvathi;
Smith, Daniel;
Kamineni, Himani;
Klewer, Christian;
Scholefield, Mark;
Ming Lei;
Vikram, Abhishek;
Lim, Victor;
Wonwoo Kim;
Alapati, Ramakanth

Publication type:

Article

A novel efficient TSV built-in test for stacked 3D ICs.

Published in:

Turkish Journal of Electrical Engineering & Computer Sciences, 2018, v. 26, n. 4, p. 1909, doi. 10.3906/elk-1711-220

By:

GUIBANE, Badi;
HAMDI, Belgacem;
BENSALEM, Brahim;
MTIBAA, Abdellatif

Publication type:

Article

Electrical and Mechanical Analysis of Different TSV Geometries.

Published in:

Metals (2075-4701), 2020, v. 10, n. 4, p. 467, doi. 10.3390/met10040467

By:

Jeong, Il Ho;
Eslami Majd, Alireza;
Jung, Jae Pil;
Ekere, Nduka Nnamdi

Publication type:

Article

High-efficiency core-shell solar cell array from Si wafer.

Published in:

Applied Physics A: Materials Science & Processing, 2012, v. 107, n. 4, p. 911, doi. 10.1007/s00339-012-6818-5

By:

Guo, Ning;
Wei, Jinquan;
Shu, Qinke;
Jia, Yi;
Song, Shuang;
Xu, Ying;
Wang, Hongguang;
Li, Peixu;
Zhu, Hongwei;
Wang, Kunlin;
Wu, Dehai

Publication type:

Article

Study of the protrusion of through-silicon vias in dual annealing-CMP processes for 3D integration.

Published in:

Microsystems & Nanoengineering, 2025, v. 11, n. 1, p. 1, doi. 10.1038/s41378-024-00797-z

By:

Liu, Tianjian;
Wang, Shizhao;
Dong, Fang;
Xi, Yang;
Zhang, Yunpeng;
He, Tao;
Sun, Xiang;
Liu, Sheng

Publication type:

Article

High Frequency Electrical Characterization of 3D Signal/Ground through Silicon Vias.

Published in:

Progress in Electromagnetics Research Letters, 2014, v. 47, p. 71, doi. 10.2528/pierl14052704

By:

Adamshick, Steve;
Carroll, Robert;
Rao, Megha;
La Tulipe, Douglas;
Kruger, Seth;
Burke, John;
Liehr, Michael

Publication type:

Article

Energy-efficient 3D multi-band I/O interface for enhanced mobile memory communication.

Published in:

Automatika: Journal for Control, Measurement, Electronics, Computing & Communications, 2025, v. 66, n. 1, p. 69, doi. 10.1080/00051144.2024.2444758

By:

Alzahmi, Ahmed

Publication type:

Article

Through-Silicon Vias and 3D Inductors for RF Applications.

Published in:

Microwave Journal, 2014, v. 57, n. 2, p. 80

By:

Ebefors, Thorbjörn;
Oberhammer, Joachim

Publication type:

Article

基于硅通孔的三维微系统互联结构总剂量效应损伤机制研究.

Published in:

Atomic Energy Science & Technology, 2024, v. 58, n. 8, p. 1789, doi. 10.7538/yzk.2023.youxian.0771

By:

王昊;
陈睿;
陈钱;
韩建伟;
于新;
孟德超;
杨驾鹏;
薛玉雄;
周泉丰;
韩瑞龙

Publication type:

Article

High-Level Crosstalk Model in N-Coupled Through-Silicon Vias (TSVs).

Published in:

Advances in Electrical & Computer Engineering, 2018, v. 18, n. 3, p. 9, doi. 10.4316/AECE.2018.03002

By:

Hyeonggeon LEE;
Jong Kang PARK;
Jong Tae KIM

Publication type:

Article

Advanced Electronic Packaging Technology: From Hard to Soft.

Published in:

Materials (1996-1944), 2023, v. 16, n. 6, p. 2346, doi. 10.3390/ma16062346

By:

Gu, Yue;
Huo, Yongjun

Publication type:

Article

Through-Silicon via Device Non-Destructive Defect Evaluation Using Ultra-High-Resolution Acoustic Microscopy System.

Published in:

Materials (1996-1944), 2023, v. 16, n. 2, p. 860, doi. 10.3390/ma16020860

By:

Kim, Tae Hyeong;
Kang, Dongchan;
Kim, Jeong Nyeon;
Park, Ik Keun

Publication type:

Article

Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique.

Published in:

Materials (1996-1944), 2021, v. 14, n. 18, p. 5226, doi. 10.3390/ma14185226

By:

Huang, Pei-Chen;
Lee, Chang-Chun

Publication type:

Article