Works matching DE "THROUGH-silicon via"
Results: 93
Energy-efficient 3D multi-band I/O interface for enhanced mobile memory communication.
- Published in:
- Automatika: Journal for Control, Measurement, Electronics, Computing & Communications, 2025, v. 66, n. 1, p. 69, doi. 10.1080/00051144.2024.2444758
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- Article
Generic Integer Linear Programming Formulation for 3D IC Partitioning.
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- Journal of Information Science & Engineering, 2012, v. 28, n. 6, p. 1129
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- Article
TSV‐based common‐mode noise‐suppressing filter design and implementation.
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- Electronics Letters (Wiley-Blackwell), 2022, v. 58, n. 6, p. 243, doi. 10.1049/ell2.12412
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- Article
Fabrication and measurement of 3D LPF based on coaxial TSV.
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- Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 2, p. 102, doi. 10.1049/el.2018.7325
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- Article
STTAR: A Traffic- and Thermal-Aware Adaptive Routing for 3D Network-on-Chip Systems.
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- Computers, Materials & Continua, 2022, v. 72, n. 3, p. 5531, doi. 10.32604/cmc.2022.027177
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- Article
TSV Manufacturing Fault Modeling and Diagnosis Based on Multi-Tone Dither.
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- Journal of Advanced Computational Intelligence & Intelligent Informatics, 2019, v. 23, n. 1, p. 42, doi. 10.20965/jaciii.2019.p0042
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- Article
Boundary Layers Defect Diagnosis and Analysis of Through Silicon Via (TSV).
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- International Journal of Performability Engineering, 2019, v. 15, n. 1, p. 97, doi. 10.23940/ijpe.19.01.p10.97106
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- Article
Addressing Interposer and TSV Quality Challenges.
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- EE: Evaluation Engineering, 2012, v. 51, n. 2, p. 16
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- Article
Through-Silicon Vias and 3D Inductors for RF Applications.
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- Microwave Journal, 2014, v. 57, n. 2, p. 80
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- Article
Three-Dimensional Wafer Stacking Using Cu TSV Integrated with 45 nm High Performance SOI-CMOS Embedded DRAM Technology.
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- Journal of Low Power Electronics & Applications, 2014, v. 4, n. 2, p. 77, doi. 10.3390/jlpea4020077
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- Article
A novel efficient TSV built-in test for stacked 3D ICs.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2018, v. 26, n. 4, p. 1909, doi. 10.3906/elk-1711-220
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- Article
Through-polymer, via technology-enabled, flexible, lightweight, and integrated devices for implantable neural probes.
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- Microsystems & Nanoengineering, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41378-024-00691-8
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- Publication type:
- Article
Fast power density aware three‐dimensional integrated circuit floorplanning for hard macroblocks using best operator combination genetic algorithm.
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- International Journal of Circuit Theory & Applications, 2023, v. 51, n. 10, p. 4879, doi. 10.1002/cta.3672
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- Article
Advanced Electronic Packaging Technology: From Hard to Soft.
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- Materials (1996-1944), 2023, v. 16, n. 6, p. 2346, doi. 10.3390/ma16062346
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- Publication type:
- Article
Through-Silicon via Device Non-Destructive Defect Evaluation Using Ultra-High-Resolution Acoustic Microscopy System.
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- Materials (1996-1944), 2023, v. 16, n. 2, p. 860, doi. 10.3390/ma16020860
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- Publication type:
- Article
Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique.
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- Materials (1996-1944), 2021, v. 14, n. 18, p. 5226, doi. 10.3390/ma14185226
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- Article
PDDVB: A Priority Division Distributed Vertical Bus for 3D Bus-NoC Hybrid Network.
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- IAENG International Journal of Computer Science, 2016, v. 43, n. 2, p. 245
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- Article
TSV-based antenna for on-chip wireless communication.
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- IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2020, v. 14, n. 4, p. 302, doi. 10.1049/iet-map.2019.0431
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- Publication type:
- Article
Admittance extraction and analysis for through silicon vias near edge and at corner of silicon substrate.
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- IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2016, v. 10, n. 12, p. 1345, doi. 10.1049/iet-map.2015.0373
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- Article
Signal Integrity Analysis in Carbon Nanotube Based Through-Silicon Via.
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- Active & Passive Electronic Components, 2014, p. 1, doi. 10.1155/2014/524107
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- Publication type:
- Article
A Short Review of Through-Silicon via (TSV) Interconnects: Metrology and Analysis.
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- Applied Sciences (2076-3417), 2023, v. 13, n. 14, p. 8301, doi. 10.3390/app13148301
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- Publication type:
- Article
A TSV-Structured Room Temperature p-Type TiO 2 Nitric Oxide Gas Sensor.
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- Applied Sciences (2076-3417), 2022, v. 12, n. 19, p. 9946, doi. 10.3390/app12199946
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- Article
Editorial for Special Issue on Reliability Analysis of Electrotechnical Devices.
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- Applied Sciences (2076-3417), 2022, v. 12, n. 8, p. 4086, doi. 10.3390/app12084086
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- Article
Recovery of TSV Based 3D IC.
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- International Journal of Advanced Research in Computer Science, 2017, v. 8, n. 5, p. 149
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- Publication type:
- Article
A Design Method and Application of Meta-Surface-Based Arbitrary Passband Filter for Terahertz Communication.
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- Sensors (14248220), 2024, v. 24, n. 4, p. 1291, doi. 10.3390/s24041291
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- Publication type:
- Article
The Impact of 3D Stacking and Technology Scaling on the Power and Area of Stereo Matching Processors.
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- Sensors (14248220), 2017, v. 17, n. 2, p. 426, doi. 10.3390/s17020426
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- Publication type:
- Article
A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications.
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- Sensors (14248220), 2017, v. 17, n. 2, p. 322, doi. 10.3390/s17020322
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- Article
Peer-Reviewed Literature of Interest to Failure Analysis: A Cornucopia.
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- Electronic Device Failure Analysis, 2021, v. 23, n. 3, p. 46
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- Article
LITERATURE REVIEW.
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- Electronic Device Failure Analysis, 2020, v. 22, n. 2, p. 46
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- Article
HIGH RESOLUTION ACOUSTIC GHz MICROSCOPY.
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- Electronic Device Failure Analysis, 2018, v. 20, n. 4, p. 4, doi. 10.31399/asm.edfa.2018-4.p004
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- Article
NOVEL TECHNIQUE MEASURES WARPAGE IN NEXT-GENERATION ICs.
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- Electronic Device Failure Analysis, 2017, v. 19, n. 3, p. 43
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- Publication type:
- Article
EMERGING TECHNIQUES FOR 2-D/2.5-D/3-D PACKAGE FAILURE ANALYSIS: EOTPR, 3-D X-RAY, AND PLASMA FIB.
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- Electronic Device Failure Analysis, 2016, v. 18, n. 4, p. 30, doi. 10.31399/asm.edfa.2016-4.p030
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- Article
PLASMA FIB PROVIDES VITAL DELAYERING AND SITE SPECIFIC FAILURE ANALYSIS CAPABILITIES FOR LARGER-SCALE STRUCTURES.
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- Electronic Device Failure Analysis, 2016, v. 18, n. 1, p. 30, doi. 10.31399/asm.edfa.2016-1.p030
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- Article
3-D ICs with TSVs: The Hard Work Continues.
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- 2013
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- Publication type:
- Proceeding
TSV Developments.
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- Electronic Device Failure Analysis, 2012, v. 14, n. 3, p. 46, doi. 10.31399/asm.edfa.2012-3.p046
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- Publication type:
- Article
Challenges in Failure Analysis for Three-Dimensional Integration.
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- Electronic Device Failure Analysis, 2012, v. 14, n. 3, p. 2
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- Publication type:
- Article
Coupling capacitance in through-silicon vias:non-homogeneous medium effect.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 2, p. 152, doi. 10.1049/el.2015.3141
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- Publication type:
- Article
On-chip trimming circuit based on embedded one-time-programming memory for magnetic wireless interlayer transmission module.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 24, p. 2064, doi. 10.1049/el.2015.2275
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- Publication type:
- Article
Analytical evaluation of scattering parameters for equivalent circuit of through silicon via array.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 13, p. 1025, doi. 10.1049/el.2015.1265
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- Publication type:
- Article
Simultaneous process self-calibration method using TDC for 3D DDR4 DRAM.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 22, p. 1579, doi. 10.1049/el.2014.1595
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- Publication type:
- Article
BMD impact on silicon fin defect at TSV bottom.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 13, p. 954, doi. 10.1049/el.2014.0974
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- Publication type:
- Article
基于TSV技术的3D电感的设计与实现.
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- Electronic Components & Materials, 2018, v. 37, n. 6, p. 49, doi. 10.14106/j.cnki.1001-2028.2018.06.010
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- Publication type:
- Article
Integrated Passive Devices and Switching Circuit Design for a 3D DC/DC Converter up to 60 V.
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- Journal of Circuits, Systems & Computers, 2020, v. 29, n. 03, p. N.PAG, doi. 10.1142/S0218126620500395
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- Publication type:
- Article
A TSV Fault-Tolerant Scheme Based on Failure Classification in 3D-NoC.
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- Journal of Circuits, Systems & Computers, 2017, v. 26, n. 4, p. -1, doi. 10.1142/S0218126617500591
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- Publication type:
- Article
Minimal Buffer Insertion Based Low Power Clock Tree Synthesis for 3D Integrated Circuits.
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- Journal of Circuits, Systems & Computers, 2016, v. 25, n. 11, p. -1, doi. 10.1142/S0218126616501425
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- Publication type:
- Article
Tape-Assisted Transfer of Carbon Nanotube Bundles for Through-Silicon-Via Applications.
- Published in:
- Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2898, doi. 10.1007/s11664-015-3752-2
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- Publication type:
- Article
Analysis of 3D TSV Vertical Interconnection Using Pre-applied Nonconductive Films.
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- Journal of Electronic Materials, 2014, v. 43, n. 11, p. 4214, doi. 10.1007/s11664-014-3319-7
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- Article
Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication.
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- Journal of Electronic Materials, 2012, v. 41, n. 9, p. 2533, doi. 10.1007/s11664-012-2117-3
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- Publication type:
- Article
Microstructure Evolution and Defect Formation in Cu Through-Silicon Vias (TSVs) During Thermal Annealing.
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- Journal of Electronic Materials, 2012, v. 41, n. 4, p. 712, doi. 10.1007/s11664-012-1943-7
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- Publication type:
- Article
Assessment of through‐silicon‐vias with different configurations of ground vias and accounting for substrate losses.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2021, v. 31, n. 10, p. 1, doi. 10.1002/mmce.22811
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- Publication type:
- Article