Works matching DE "THRESHOLD voltage"

Results: 1686

Influence of Terminal Electron Acceptors on Anthracene‐Based D‐π‐A Systems for Enhanced Resistive WORM Memory Performance.

Published in:

Asian Journal of Organic Chemistry, 2025, v. 14, n. 5, p. 1, doi. 10.1002/ajoc.202500045

By:

Muhsina, Kooriparambil;
Akshaya, Madanan;
Imran, Predhanekar Mohamed;
Bhuvanesh, Nattamai S. P.;
Nagarajan, Samuthira

Publication type:

Article

Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode.

Published in:

Energies (19961073), 2025, v. 18, n. 9, p. 2331, doi. 10.3390/en18092331

By:

Fu, Wanqiang;
Chen, Qizhen;
Gao, Peng;
Jiang, Linqin;
Qiu, Yu;
Wuu, Dong-Sing;
Horng, Ray-Hua;
Lien, Shui-Yang

Publication type:

Article

Impact of porous nanoparticles on the electro-optical and dielectric parameters of nematic liquid crystals for display applications: Cost effective approach.

Published in:

Journal of Dispersion Science & Technology, 2025, v. 46, n. 6, p. 1027, doi. 10.1080/01932691.2024.2312822

By:

Pathak, Govind;
M, Vandana;
Hegde, Gurumurthy;
Verma, Srinandini;
Manohar, Rajiv

Publication type:

Article

High‐Performance p‐NiO/β‐Ga2O3 Heterostructure Junction Field‐Effect Transistors with Mesa Field Plate Structure.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 5, p. 1, doi. 10.1002/pssr.202400395

By:

Luan, SuZhen;
Gu, WenChong

Publication type:

Article

Memory switching characteristics in amorphous ZnIn2Se4 thin films.

Published in:

Surface Engineering, 2015, v. 31, n. 7, p. 556, doi. 10.1179/1743294415Y.0000000001

By:

Dhruv, D. K.;
Nowicki, A.;
Patel, B. H.;
Dhamecha, V. D.

Publication type:

Article

Nanoscale NMOS Device Model Analysis and its Characteristics.

Published in:

Macromolecular Symposia, 2025, v. 414, n. 1, p. 1, doi. 10.1002/masy.202400191

By:

Singh, Palvinder;
Sachdeva, Amit;
Singh, Shruti;
Yahya, M. Z. A.;
Rahman, Nor Mas Mira Abd;
Pal, Rishi

Publication type:

Article

Influence of barrel diameter on exploding foil initiators.

Published in:

Propellants, Explosives, Pyrotechnics, 2023, v. 48, n. 8, p. 1, doi. 10.1002/prep.202200332

By:

Wang, Yao;
Wang, Shaoyi;
Tang, Duo;
Wang, Wanjun;
He, Bi;
Chu, Genbai;
Wang, Liang

Publication type:

Article

Nonlinear Resonant Ultrasound Spectroscopy for Predicting Sensitivity to Initiation in Granular High Explosives.

Published in:

Propellants, Explosives, Pyrotechnics, 2020, v. 45, n. 3, p. 387, doi. 10.1002/prep.201900162

By:

Schulze, Peter;
Pittman, Emily;
Sjue, Sky;
Moore, David S.;
Feagin, Trevor;
Donahue, Carly

Publication type:

Article

Sensitivity Prediction of Exploding Foil Initiator.

Published in:

Propellants, Explosives, Pyrotechnics, 2019, v. 44, n. 4, p. 455, doi. 10.1002/prep.201800210

By:

Chen, Qingchou;
Ma, Tao;
Li, Yong

Publication type:

Article

Parametric Influences on the Sensitivity of Exploding Foil Initiators.

Published in:

Propellants, Explosives, Pyrotechnics, 2014, v. 39, n. 4, p. 558, doi. 10.1002/prep.201300108

By:

Chen, Qing ‐ Chou;
Fu, Qiu ‐ Bo;
Chen, Lang;
Han, Zhong ‐ Fei

Publication type:

Article

Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites.

Published in:

Macromolecular Chemistry & Physics, 2022, v. 223, n. 17, p. 1, doi. 10.1002/macp.202200104

By:

Dou, Feng;
Zhao, Xiaofeng;
Gao, Meng;
He, Zhaohua;
Wang, Shuao;
Liu, Hanzhou;
Wang, Shuhong;
Wang, Cheng

Publication type:

Article

Exploring Single Atom Substitution In Phenanthro[9,10‐d]Imidazole ‐Based D–π–A Architectures with Fluorene and its Heteroanalogs for Non‐Volatile Resistive WORM Memory Device Applications.

Published in:

Chemistry - A European Journal, 2025, v. 31, n. 12, p. 1, doi. 10.1002/chem.202404337

By:

Akshaya, Madanan;
Gayathri, Ramesh;
Mohamed Imran, Predhanekar;
Nagarajan, Samuthira

Publication type:

Article

Design of Triphenylamine‐based D‐π‐A Systems for Efficient Ternary WORM Memory Devices.

Published in:

Chemistry - A European Journal, 2024, v. 30, n. 48, p. 1, doi. 10.1002/chem.202402015

By:

Gayathri, Ramesh;
Akshaya, Madanan;
Imran, Predhanekar Mohamed;
Nagarajan, Samuthira

Publication type:

Article

Electronic and Charge Transport Properties in Bridged versus Unbridged Nanohoops: Role of the Nanohoop Size.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 41, p. 1, doi. 10.1002/chem.202300934

By:

Lucas, Fabien;
Brouillac, Clément;
McIntosh, Nemo;
Giannini, Samuele;
Rault‐Berthelot, Joëlle;
Lebreton, Christophe;
Beljonne, David;
Cornil, Jérôme;
Jacques, Emmanuel;
Quinton, Cassandre;
Poriel, Cyril

Publication type:

Article

Enhancing the Resistive Switching Behavior of WORM Memory Devices Using D−π−A Based Ester‐Flanked Quinolines**.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 8, p. 1, doi. 10.1002/chem.202202569

By:

Angela, Varghese M.;
Harshini, Deivendran;
Anjali, Anshika;
Imran, Predhanekar M.;
Bhuvanesh, Nattamai S. P.;
Nagarajan, Samuthira

Publication type:

Article

Large-Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 41, p. n/a, doi. 10.1002/adfm.201703119

By:

Dai, Zhenyu;
Wang, Zhenwei;
He, Xin;
Zhang, Xi‐Xiang;
Alshareef, Husam N.

Publication type:

Article

Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 10, p. n/a, doi. 10.1002/adfm.201604811

By:

Pan, Chengbin;
Ji, Yanfeng;
Xiao, Na;
Hui, Fei;
Tang, Kechao;
Guo, Yuzheng;
Xie, Xiaoming;
Puglisi, Francesco M.;
Larcher, Luca;
Miranda, Enrique;
Jiang, Lanlan;
Shi, Yuanyuan;
Valov, Ilia;
McIntyre, Paul C.;
Waser, Rainer;
Lanza, Mario

Publication type:

Article

Ultrahigh Gain Polymer Photodetectors with Spectral Response from UV to Near-Infrared Using ZnO Nanoparticles as Anode Interfacial Layer.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 36, p. 6619, doi. 10.1002/adfm.201601980

By:

Zhou, Xiaokang;
Yang, Dezhi;
Ma, Dongge;
Vadim, Agafonov;
Ahamad, Tansir;
Alshehri, Saad M.

Publication type:

Article

Synthesis of Ultrathin, Homogeneous Copolymer Dielectrics to Control the Threshold Voltage of Organic Thin-Film Transistors.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 36, p. 6574, doi. 10.1002/adfm.201602585

By:

Pak, Kwanyong;
Seong, Hyejeong;
Choi, Junhwan;
Hwang, Wan Sik;
Im, Sung Gap

Publication type:

Article

Gate-Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 20, p. 2972, doi. 10.1002/adfm.201403407

By:

Parui, Subir;
Pietrobon, Luca;
Ciudad, David;
Vélez, Saül;
Sun, Xiangnan;
Casanova, Fèlix;
Stoliar, Pablo;
Hueso, Luis E.

Publication type:

Article

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 36, p. 5679, doi. 10.1002/adfm.201401304

By:

Sun, Haitao;
Liu, Qi;
Li, Congfei;
Long, Shibing;
Lv, Hangbing;
Bi, Chong;
Huo, Zongliang;
Li, Ling;
Liu, Ming

Publication type:

Article

Aligned Polythiophene and its Blend Film by Direct-Writing for Anisotropic Charge Transport.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 31, p. 4959, doi. 10.1002/adfm.201400699

By:

Lu, Guanghao;
Chen, Jiayue;
Xu, Wentao;
Li, Sijun;
Yang, Xiaoniu

Publication type:

Article

Flexible Nonvolatile Transistor Memory Devices Based on One-Dimensional Electrospun P3HT:Au Hybrid Nanofibers.

Published in:

Advanced Functional Materials, 2014, v. 23, n. 39, p. 4960, doi. 10.1002/adfm.201300283

By:

Chang, Hsuan‐Chun;
Liu, Cheng‐Liang;
Chen, Wen‐Chang

Publication type:

Article

High-Performance n-Channel Thin-Film Field-Effect Transistors Based on a Nanowire-Forming Polymer.

Published in:

Advanced Functional Materials, 2013, v. 23, n. 16, p. 2060, doi. 10.1002/adfm.201202065

By:

Hahm, Suk Gyu;
Rho, Yecheol;
Jung, Jungwoon;
Kim, Se Hyun;
Sajoto, Tissa;
Kim, Felix S.;
Barlow, Stephen;
Park, Chan Eon;
Jenekhe, Samson A.;
Marder, Seth R.;
Ree, Moonhor

Publication type:

Article

Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 5, p. 1, doi. 10.1007/s10854-023-09869-8

By:

Li, Haixia;
Li, Youyong;
Jiang, Han;
Mao, Lingfeng;
Ni, Yanan

Publication type:

Article

Flash sintering behaviors of Y2O3-dopd high-voltage ZnO varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 34, p. 25861, doi. 10.1007/s10854-022-09276-5

By:

Jiang, Ming;
Shi, Meng-Yang;
Li, Jia-Mao;
Liu, Juan;
Zhang, Lei;
Cheng, Zhan;
Qin, Jian;
Jiu, Yong-Tao;
Tang, Bin;
Xu, Dong

Publication type:

Article

Chemical modulation of conducting polymer gate electrode work function based double gate Mg2Si TFET for gas sensing applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 31, p. 23927, doi. 10.1007/s10854-021-07597-5

By:

Dassi, Minaxi;
Madan, Jaya;
Pandey, Rahul;
Sharma, Rajnish

Publication type:

Article

Khaya gum – a natural and eco-friendly biopolymer dielectric for low-cost organic field-effect transistors (OFETs).

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 19, p. 15283, doi. 10.1007/s10854-022-08388-2

By:

Tall, Abdoulaye;
Faraji, Sheida;
Diallo, Abdou K.;
Mohammadian, Navid;
Erouel, Mohsen;
Seck, Mané;
Saadi, Meriem;
Khirouni, Kamel;
Majewski, Leszek A.

Publication type:

Article

Detection of biomolecules in dielectric modulated double metal below ferroelectric layer FET with improved sensitivity.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 17, p. 13558, doi. 10.1007/s10854-022-08290-x

By:

Pathak, Yash;
Malhotra, Bansi Dhar;
Chaujar, Rishu

Publication type:

Article

Mg2Si/Si heterojunction dopingless TFET with reduced random dopant fluctuations for low power applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 9, p. 6816, doi. 10.1007/s10854-022-07860-3

By:

Dassi, Minaxi;
Madan, Jaya;
Pandey, Rahul;
Sharma, Rajnish

Publication type:

Article

Synthesis of GO@Fe3O4@TiO2 type organic–inorganic nanohybrid material: Investigation of the effect of nanohybrid doped liquid crystal E7 and the photocatalytic degradation of ciprofloxacin.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 7, p. 4314, doi. 10.1007/s10854-021-07625-4

By:

Uruş, Serhan;
Çaylar, Mahmut;
Eskalen, Hasan;
Özgan, Şükrü

Publication type:

Article

Electrical characterization of Cu-doped CdS p-type thin film transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 20, p. 25462, doi. 10.1007/s10854-021-07006-x

By:

Berman-Mendoza, D.;
Diaz-Grijalva, O. I.;
López-Delgado, R.;
Ramos-Carrazco, A.;
Alvarez-Ramos, M. E.;
Romo-Garcìa, F.;
Higuera-Valenzuela, H. J.;
Rangel, R.

Publication type:

Article

Thickness effect on the crystallization characteristic of RF sputtered Sb thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 19, p. 24240, doi. 10.1007/s10854-021-06889-0

By:

Huang, Yufeng;
Wu, Weihua;
Xu, Shengqing;
Zhu, Xiaoqin;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Performance evaluation of junctionless double surrounding gate In0.53Ga0.47As nanotube MOSFET using dual material gate engineering.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 7, p. 9171, doi. 10.1007/s10854-021-05583-5

By:

Sanjay;
Prasad, B.;
Vohra, Anil

Publication type:

Article

Synthesis and characterization of ZnO-based nano-powders: study of the effect of sintering temperature on the performance of ZnO–Bi2O3 varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 3, p. 3125, doi. 10.1007/s10854-020-05062-3

By:

Boumezoued, Amal;
Guergouri, Kamel;
Barille, Regis;
Rechem, Djamil;
Mourad, Zaabat

Publication type:

Article

Resistive switching effect based on graphene-embedded poly(4-vinyl phenol) composite film by spinning coating.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 21, p. 18605, doi. 10.1007/s10854-020-04403-6

By:

Zhao, Enming;
Li, Xiaoqi;
Liu, Xiaodan;
Wang, Chen;
Liu, Guangyu;
Liu, Shuangqiang;
Xing, Chuanxi

Publication type:

Article

Rapid detection of biomolecules in a dielectric modulated GaN MOSHEMT.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 19, p. 16609, doi. 10.1007/s10854-020-04216-7

By:

Shaveta;
Ahmed, H. M. Maali;
Chaujar, Rishu

Publication type:

Article

Electrical conductivity and breakdown properties of some erbium oxide doped phosphovanadate glasses.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 15, p. 12216, doi. 10.1007/s10854-020-03767-z

By:

Ahmed, E. M.;
Youssif, M. I.;
Elzelaky, A. A.

Publication type:

Article

The influence of low indium composition ratio on sol–gel solution-deposited amorphous zinc oxide thin film transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 14, p. 11720, doi. 10.1007/s10854-020-03723-x

By:

Ruzgar, Serif;
Caglar, Yasemin;
Caglar, Mujdat

Publication type:

Article

Investigation of asymmetric degradation in electrical properties of a-InGaZnO thin-film transistor arrays as a function of channel width-to-length aspect ratio.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 12, p. 9826, doi. 10.1007/s10854-020-03527-z

By:

Agrawal, Khushabu;
Patil, Vilas;
Chavan, G. T.;
Yoon, Geonju;
Kim, Jaemin;
Park, Jinsu;
Pae, Sangwoo;
Kim, JinSeok;
Cho, Eun-Chel;
Yi, Junsin

Publication type:

Article

Low leakage GaN HEMTs with sub-100 nm T-shape gates fabricated by a low-damage etching process.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5886, doi. 10.1007/s10854-019-02758-z

By:

Lei, Siqi;
Cheng, Wei-Chih;
Wu, Jingyi;
Wang, Liang;
Wang, Qing;
Xia, Guangrui;
Zhao, Feng;
Yu, Hongyu

Publication type:

Article

Investigation on the electrical properties of amorphous IZALO thin-film transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 6, p. 4867, doi. 10.1007/s10854-020-03049-8

By:

Jia, Lanchao;
Liu, Depeng;
Yang, Hui;
Su, Jinbao;
Yi, Lixin;
Zhang, Xiqing

Publication type:

Article

Solution for green organic thin film transistors: Fe3O4 nano-core with PABA external shell as p-type film.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 4, p. 3063, doi. 10.1007/s10854-019-02851-3

By:

Ravariu, Cristian;
Mihaiescu, Dan Eduard;
Morosan, Alina;
Istrati, Daniela;
Purcareanu, Bogdan;
Cristescu, Rodica;
Trusca, Roxana;
Vasile, Bogdan Stefan

Publication type:

Article

Alternate lanthanum oxide/silicon oxynitride-based gate stack performance enhancement due to ultrathin oxynitride interfacial layer for CMOS applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 3, p. 1986, doi. 10.1007/s10854-019-02718-7

By:

Gupta, Prachi;
Soni, Mahesh;
Sharma, Satinder K.

Publication type:

Article

Investigation on electrical characteristics of amorphous InZnSnMgO thin film transistors deposited at room-temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 23, p. 20551, doi. 10.1007/s10854-019-02419-1

By:

Liu, Depeng;
Jia, Lanchao;
Su, Jinbao;
Ma, Yaobin;
Li, Ran;
Dai, Shiqian;
Wang, Ye;
Yang, Hui;
Zhang, Xiqing

Publication type:

Article

Solution processed boron doped indium oxide thin-film as channel layer in thin-film transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 20, p. 18696, doi. 10.1007/s10854-019-02222-y

By:

Arulkumar, S.;
Parthiban, S.;
Gnanaprakash, D.;
Kwon, J. Y.

Publication type:

Article

Low-temperature reducible particle-free screen-printable silver ink for the fabrication of high conductive electrodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 20, p. 18647, doi. 10.1007/s10854-019-02217-9

By:

Manjunath, G.;
Pujar, Pavan;
Gupta, Bikesh;
Gupta, Dipti;
Mandal, Saumen

Publication type:

Article

Prediction of the electrical response of solution-processed thin-film transistors using multifactorial analysis.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 18, p. 16939, doi. 10.1007/s10854-019-01695-1

By:

Braga, João P.;
Moises, Lucas A.;
Gozzi, Giovani;
Fugikawa-Santos, Lucas

Publication type:

Article

Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 14, p. 12929, doi. 10.1007/s10854-019-01655-9

By:

Lin, Dong;
Zheng, Xudong;
Yang, Jianwen;
Li, Kaiwen;
Shao, Jingjing;
Zhang, Qun

Publication type:

Article

Influence of thermal treatment on the nonlinear current-voltage behavior and restoration hysteresis effect of CaCuTiO thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 10, p. 10816, doi. 10.1007/s10854-016-5188-8

By:

Xiao, Mi;
Hu, Quan

Publication type:

Article