Effects of Interface Traps on Ferroelectric Field-Effect Transistors with Random Crystal Phase Fluctuations.
- Published in:
- Fluctuation & Noise Letters, 2025, v. 24, n. 4, p. 1, doi. 10.1142/S0219477525500403
- By:
- Publication type:
- Article
Works matching DE "THRESHOLD voltage"
Results: 1726
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High-Efficient Gate Diffusion Input-Based Approximate Full Adders with Low-Transistors Preservation for Multiplier-Based Digital Filters.
- Published in:
- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2025, v. 50, n. 14, p. 10641, doi. 10.1007/s13369-024-09749-1
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- Publication type:
- Article
3
DFT Performance Analysis of Graphene Nanoribbon FET with Gate Stack for Low Power Applications.
- Published in:
- Journal of Nano- & Electronic Physics, 2025, v. 17, n. 3, p. 03022-1, doi. 10.21272/jnep.17(3).03022
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- Publication type:
- Article
4
Performance Optimization of Channel Length Modulated Vertical Nanowire Tunnel Field Effect Transistors for High Frequency and Radio Frequency Applications.
- Published in:
- Semiconductors, 2025, v. 59, n. 7, p. 678, doi. 10.1134/S1063782625601001
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- Article
5
A CMOS Current Reference with Novel Temperature Compensation Based on Geometry-Dependent Threshold Voltage Effects.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 13, p. 2698, doi. 10.3390/electronics14132698
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- Publication type:
- Article
6
Total Ionizing Dose Effects on Lifetime of NMOSFETs Due to Hot Carrier-Induced Stress.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 13, p. 2563, doi. 10.3390/electronics14132563
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- Article
7
Sensorless Dual TSEP (V th , R dson) Implementation for Junction Temperature Measurement in Parallelized SiC MOSFETs †.
- Published in:
- Energies (19961073), 2025, v. 18, n. 13, p. 3470, doi. 10.3390/en18133470
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- Article
8
Analyzing Noise Margin Degradation in Subthreshold Nanosheet Transistor Logic Gates: An Interface Quasi-Fermi Potential Model for Interface-trapped Charge Effects.
- Published in:
- Sensors & Materials, 2025, v. 37, n. 7, Part 1, p. 2793, doi. 10.18494/SAM5534
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- Article
9
Analyzing the Effectiveness of Various NMOS Layouts for Total Ionizing Dose Hardening in 180nm CMOS.
- Published in:
- Journal of Electronic Testing, 2025, v. 41, n. 3, p. 303, doi. 10.1007/s10836-025-06182-6
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- Publication type:
- Article
10
Fourier Series-Based Analytical Model for Channel Potential of Dual Material Gate SOI Junctionless FinFET.
- Published in:
- Journal of Electronic Materials, 2025, v. 54, n. 8, p. 6858, doi. 10.1007/s11664-025-12055-7
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- Publication type:
- Article
11
Research on High-Threshold-Voltage InAlN/GaN HEMTs with p-GaN Caps and Trench Gates with InGaN Buried Layers.
- Published in:
- Journal of Electronic Materials, 2025, v. 54, n. 8, p. 6847, doi. 10.1007/s11664-025-12010-6
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- Publication type:
- Article
12
Stability of V<sub>TH</sub> and R<sub>ON</sub> in p‐GaN Schottky‐Gate AlGaN/GaN High‐Electron‐Mobility Transistors under Reverse and Gate Bias Stress: Impact of Gate Offset.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 13, p. 1, doi. 10.1002/pssa.202401012
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- Article
13
kHz frequency response supercapacitor of large potential window using aqueous electrolyte.
- Published in:
- Journal of Materials Science, 2025, v. 60, n. 26, p. 10927, doi. 10.1007/s10853-025-11064-5
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- Article
14
Electrical Characteristics and Analytical Modeling of GAA-Based Nanowire FeFET.
- Published in:
- NANO (1793-2920), 2025, v. 20, n. 8, p. 1, doi. 10.1142/S1793292024501753
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- Publication type:
- Article
15
High Performance and PVT Variation Tolerant Design for a Ternary Multiplier Using GNRFET Technology.
- Published in:
- Circuits, Systems & Signal Processing, 2025, v. 44, n. 7, p. 4559, doi. 10.1007/s00034-025-03034-8
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- Publication type:
- Article
16
Effect of Rising Time on AC Stress-Induced Performance Degradation in a-ITGZO Thin-Film Transistors.
- Published in:
- Nanomaterials (2079-4991), 2025, v. 15, n. 12, p. 880, doi. 10.3390/nano15120880
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- Publication type:
- Article
17
Quantum Simulation Study of Ultrascaled Label-Free DNA Sensors Based on Sub-10 nm Dielectric-Modulated TMD FETs: Sensitivity Enhancement Through Downscaling.
- Published in:
- Micromachines, 2025, v. 16, n. 6, p. 690, doi. 10.3390/mi16060690
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- Publication type:
- Article
18
Energy Efficient Tri-State CNFET Ternary Logic Gates.
- Published in:
- International Journal of Nanoscience, 2022, v. 21, n. 4, p. 1, doi. 10.1142/S0219581X22500247
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- Publication type:
- Article
19
Performance Enhancement of AlGaN/GaN HEMT by Optimization of Device Parameters Considering Nanometer Barrier Layer Thickness.
- Published in:
- International Journal of Nanoscience, 2020, v. 19, n. 6, p. N.PAG, doi. 10.1142/S0219581X20500118
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- Publication type:
- Article
20
Multi-Threshold Voltage CMOS Design for Low-Power Half Adder Circuit.
- Published in:
- International Journal of Nanoscience, 2015, v. 14, n. 5/6, p. 1550022-1, doi. 10.1142/S0219581X15500222
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- Publication type:
- Article
21
Gate-Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction.
- Published in:
- Advanced Functional Materials, 2015, v. 25, n. 20, p. 2972, doi. 10.1002/adfm.201403407
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- Publication type:
- Article
22
Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 36, p. 5679, doi. 10.1002/adfm.201401304
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- Publication type:
- Article
23
Aligned Polythiophene and its Blend Film by Direct-Writing for Anisotropic Charge Transport.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 31, p. 4959, doi. 10.1002/adfm.201400699
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- Publication type:
- Article
24
Flexible Nonvolatile Transistor Memory Devices Based on One-Dimensional Electrospun P3HT:Au Hybrid Nanofibers.
- Published in:
- Advanced Functional Materials, 2014, v. 23, n. 39, p. 4960, doi. 10.1002/adfm.201300283
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- Publication type:
- Article
25
High-Performance n-Channel Thin-Film Field-Effect Transistors Based on a Nanowire-Forming Polymer.
- Published in:
- Advanced Functional Materials, 2013, v. 23, n. 16, p. 2060, doi. 10.1002/adfm.201202065
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- Publication type:
- Article
26
Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability.
- Published in:
- Physchem, 2025, v. 5, n. 1, p. 10, doi. 10.3390/physchem5010010
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- Publication type:
- Article
27
Distributed impulsive consensus for second-order multi-agent systems with input delays.
- Published in:
- IET Control Theory & Applications (Wiley-Blackwell), 2013, v. 7, n. 16, p. 1978, doi. 10.1049/iet-cta.2013.0389
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- Publication type:
- Article
28
Voltage over‐scaling CNT‐based 8‐bit multiplier by high‐efficient GDI‐based counters.
- Published in:
- IET Computers & Digital Techniques (Wiley-Blackwell), 2023, v. 17, n. 1, p. 1, doi. 10.1049/cdt2.12049
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- Publication type:
- Article
29
Renewable Energy Powered Membrane Technology: Energy Buffering Control to Reduce Shut‐Down Events and Enhance System Resilience under Different Solar Days.
- Published in:
- Advanced Sustainable Systems, 2023, v. 7, n. 7, p. 1, doi. 10.1002/adsu.202300031
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- Publication type:
- Article
30
A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature.
- Published in:
- NPJ Quantum Information, 2022, v. 8, n. 1, p. 1, doi. 10.1038/s41534-022-00597-1
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- Publication type:
- Article
31
Establishing Irreversible Electroporation Electric Field Potential Threshold in A Suspension In Vitro Model for Cardiac and Neuronal Cells.
- Published in:
- Journal of Clinical Medicine, 2021, v. 10, n. 22, p. 5443, doi. 10.3390/jcm10225443
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- Article
32
Thiamine Deficiency Increases Intrinsic Excitability of Mouse Cerebellar Purkinje Cells.
- Published in:
- Cerebellum, 2021, v. 20, n. 2, p. 186, doi. 10.1007/s12311-020-01202-x
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- Publication type:
- Article
33
Filament Formation Mechanism for a Nanosecond Surface Barrier Discharge of Positive Polarity in Nitrogen.
- Published in:
- Plasma Physics Reports, 2022, v. 48, n. 6, p. 669, doi. 10.1134/S1063780X22600311
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- Publication type:
- Article
34
Development of Discharge in a Saline Solution at Near-Threshold Voltages.
- Published in:
- Plasma Physics Reports, 2018, v. 44, n. 6, p. 581, doi. 10.1134/S1063780X18060053
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- Publication type:
- Article
35
Charge Retention Improvement of Nonvolatile Radiation Sensor Using Metal-Oxide-Nitride-Oxide-Silicon with Si-Rich Nitride and Oxy-Nitride as Stack Charge-Trapping Layer.
- Published in:
- Sensors & Materials, 2016, v. 28, n. 9, p. 1023, doi. 10.18494/sam.2016.1391
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- Publication type:
- Article
36
Convergence of a Class of Delayed Neural Networks with Real Memristor Devices.
- Published in:
- Mathematics (2227-7390), 2022, v. 10, n. 14, p. N.PAG, doi. 10.3390/math10142439
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- Publication type:
- Article
37
Study on Grease Lubrication and Electric Erosion Characteristics in AC Electric Fields.
- Published in:
- Lubricants (2075-4442), 2024, v. 12, n. 3, p. 79, doi. 10.3390/lubricants12030079
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- Publication type:
- Article
38
A Gate Oxide Degradation and Junction Temperature Evaluation Method for SiC MOSFETs Based on an On-State Resistance Model.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 11, p. 2278, doi. 10.3390/electronics14112278
- By:
- Publication type:
- Article
39
Bulk-Driven CMOS Differential Stages for Ultra-Low-Voltage Ultra-Low-Power Operational Transconductance Amplifiers: A Comparative Analysis.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 10, p. 2085, doi. 10.3390/electronics14102085
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- Publication type:
- Article
40
Investigation of the Effect of Gate Oxide Screening with Adjustment Pulse on Commercial SiC Power MOSFETs.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 7, p. 1366, doi. 10.3390/electronics14071366
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- Publication type:
- Article
41
Dual-Gate Metal-Oxide-Semiconductor Transistors: Nanoscale Channel Length Scaling and Performance Optimization.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 7, p. 1257, doi. 10.3390/electronics14071257
- By:
- Publication type:
- Article
42
Heuristic Enz–Krummenacher–Vittoz (EKV) Model Fitting for Low-Power Integrated Circuit Design: An Open-Source Implementation.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 6, p. 1162, doi. 10.3390/electronics14061162
- By:
- Publication type:
- Article
43
A Real-Time Diagnosis Method of Open-Circuit Faults in Cascaded H-Bridge Rectifiers Based on Voltage Threshold and Current Coefficient of Variation.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 5, p. 986, doi. 10.3390/electronics14050986
- By:
- Publication type:
- Article
44
A 4T1C Pixel Circuit with Threshold Voltage Compensation for Organic Light-Emitting Diode on Silicon Microdisplays.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 5, p. 824, doi. 10.3390/electronics14050824
- By:
- Publication type:
- Article
45
Aging Analysis and Anti-Aging Circuit Design of Strong-Arm Latch Circuits in 14 nm FinFET Technology.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 4, p. 772, doi. 10.3390/electronics14040772
- By:
- Publication type:
- Article
46
Design Strategies for BCAT Structures: Enhancing DRAM Reliability and Mitigating Row Hammer Effect.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 3, p. 499, doi. 10.3390/electronics14030499
- By:
- Publication type:
- Article
47
Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 3, p. 473, doi. 10.3390/electronics14030473
- By:
- Publication type:
- Article
48
Statistical Signal Integrity Analysis on DFE with Nonideal Latch Model.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 1, p. 202, doi. 10.3390/electronics14010202
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- Publication type:
- Article
49
A Study of Device Parameters Affecting the Current Error Rate in a Low-Temperature Polycrystalline Silicon Thin-Film Transistor Pixel Circuit for Active-Matrix Organic Light-Emitting Diode Display Applications.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 23, p. 4810, doi. 10.3390/electronics13234810
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- Publication type:
- Article
50
Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 22, p. 4516, doi. 10.3390/electronics13224516
- By:
- Publication type:
- Article