Works matching DE "THRESHOLD voltage"
Results: 1629
Aging Analysis and Anti-Aging Circuit Design of Strong-Arm Latch Circuits in 14 nm FinFET Technology.
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- Electronics (2079-9292), 2025, v. 14, n. 4, p. 772, doi. 10.3390/electronics14040772
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- Article
Evaluation of Small-Molecule Candidates as Modulators of M-Type K + Currents: Impacts on Current Amplitude, Gating, and Voltage-Dependent Hysteresis.
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- International Journal of Molecular Sciences, 2025, v. 26, n. 4, p. 1504, doi. 10.3390/ijms26041504
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- Article
The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures.
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- Micromachines, 2025, v. 16, n. 2, p. 221, doi. 10.3390/mi16020221
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Capacitance–Voltage Studies on Electrostatically Actuated MEMS Micromirror Arrays †.
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- Micromachines, 2025, v. 16, n. 2, p. 157, doi. 10.3390/mi16020157
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Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs.
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- Micromachines, 2025, v. 16, n. 2, p. 141, doi. 10.3390/mi16020141
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Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites.
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- Macromolecular Chemistry & Physics, 2022, v. 223, n. 17, p. 1, doi. 10.1002/macp.202200104
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Design of Triphenylamine‐based D‐π‐A Systems for Efficient Ternary WORM Memory Devices.
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- Chemistry - A European Journal, 2024, v. 30, n. 48, p. 1, doi. 10.1002/chem.202402015
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Electronic and Charge Transport Properties in Bridged versus Unbridged Nanohoops: Role of the Nanohoop Size.
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- Chemistry - A European Journal, 2023, v. 29, n. 41, p. 1, doi. 10.1002/chem.202300934
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- Article
Enhancing the Resistive Switching Behavior of WORM Memory Devices Using D−π−A Based Ester‐Flanked Quinolines**.
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- Chemistry - A European Journal, 2023, v. 29, n. 8, p. 1, doi. 10.1002/chem.202202569
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- Article
Spirobifluorene Trimers: High Triplet Pure Hydrocarbon Hosts for Highly Efficient Blue Phosphorescent Organic Light‐Emitting Diodes.
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- Angewandte Chemie, 2024, v. 136, n. 31, p. 1, doi. 10.1002/ange.202403066
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Organic Electrochemical Transistor Based on Hydrophobic Polymer Tuned by Ionic Gels.
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- Angewandte Chemie, 2023, v. 135, n. 37, p. 1, doi. 10.1002/ange.202304549
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Light‐ and Field‐Controlled Diffusion, Ejection, Flow and Collection of Liquid at a Nanoporous Liquid Crystal Membrane.
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- Angewandte Chemie, 2022, v. 134, n. 38, p. 1, doi. 10.1002/ange.202207468
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- Article
A Chemogenetic Approach for the Optical Monitoring of Voltage in Neurons.
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- Angewandte Chemie, 2019, v. 131, n. 8, p. 2363, doi. 10.1002/ange.201812967
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- Article
Gate-Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction.
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- Advanced Functional Materials, 2015, v. 25, n. 20, p. 2972, doi. 10.1002/adfm.201403407
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Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology.
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- Advanced Functional Materials, 2014, v. 24, n. 36, p. 5679, doi. 10.1002/adfm.201401304
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Aligned Polythiophene and its Blend Film by Direct-Writing for Anisotropic Charge Transport.
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- Advanced Functional Materials, 2014, v. 24, n. 31, p. 4959, doi. 10.1002/adfm.201400699
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Flexible Nonvolatile Transistor Memory Devices Based on One-Dimensional Electrospun P3HT:Au Hybrid Nanofibers.
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- Advanced Functional Materials, 2014, v. 23, n. 39, p. 4960, doi. 10.1002/adfm.201300283
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- Article
High-Performance n-Channel Thin-Film Field-Effect Transistors Based on a Nanowire-Forming Polymer.
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- Advanced Functional Materials, 2013, v. 23, n. 16, p. 2060, doi. 10.1002/adfm.201202065
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- Article
Improvement of pattern recognition in spiking neural networks by modifying threshold parameter and using image inversion.
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- Multimedia Tools & Applications, 2024, v. 83, n. 7, p. 19061, doi. 10.1007/s11042-023-16344-3
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Reduction of drain induced barrier lowering by optimization Trimetal- GAA -Si -NW MOSFET in multimedia tools.
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- Multimedia Tools & Applications, 2022, v. 81, n. 14, p. 19849, doi. 10.1007/s11042-021-11518-3
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Fluctuation theorem of a mesoscopic engine and spin switching.
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- Fortschritte der Physik / Progress of Physics, 2017, v. 65, n. 6/8, p. n/a, doi. 10.1002/prop.201600049
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Imaging of electric-field-induced domain structure in DyMnO3 nanocrystals.
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- Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-04165-8
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A study of hydrogen plasma-induced charging effect in EUV lithography systems.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03799-4
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- Article
Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 15, p. 2393, doi. 10.1049/pel2.12786
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Analysis and design of synchronous‐rectified LLC DC–DC converter for LDC of electric vehicles.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 10, p. 1176, doi. 10.1049/pel2.12541
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Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 7, p. 869, doi. 10.1049/pel2.12700
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A charging equalizer based on Zeta converter for hybrid energy storage system.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 3, p. 463, doi. 10.1049/pel2.12661
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Analytical models of the crosstalk voltage in SiC MOSFETs under different loads.
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- IET Power Electronics (Wiley-Blackwell), 2023, v. 16, n. 14, p. 2356, doi. 10.1049/pel2.12554
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A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer.
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- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 14, p. 2400, doi. 10.1049/pel2.12188
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High-temperature electrical performances and physics-based analysis of p-GaN HEMT device.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 420, doi. 10.1049/iet-pel.2019.0510
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Impact of interface traps/defects and self-heating on the degradation of performance of a 4H-SiC VDMOSFET.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 11, p. 1, doi. 10.1049/iet-pel.2018.5897
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Modelling parallel SiC MOSFETs: thermal self-stabilisation vs. switching imbalances.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 5, p. 1071, doi. 10.1049/iet-pel.2018.5418
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Guest Editorial: Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016).
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 4, p. 627, doi. 10.1049/iet-pel.2018.0099
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Modelling the threshold voltage of p-channel enhancement-mode GaN heterostructure field-effect transistors.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 4, p. 675, doi. 10.1049/iet-pel.2017.0438
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Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 4, p. 668, doi. 10.1049/iet-pel.2017.0403
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GaN-based complementary metal-oxide- semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 4, p. 689, doi. 10.1049/iet-pel.2017.0376
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- Article
Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance.
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- NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-024-00506-4
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- Article
Reliability of high-performance monolayer MoS<sub>2</sub> transistors on scaled high-κ HfO<sub>2</sub>.
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- NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00527-7
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Unraveling the influence of defects in Janus MoSSe and Janus alloys MoS<sub>2(1−x)</sub>Se<sub>2x</sub>.
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- NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00504-6
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- Article
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00302-y
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- Article
DEPOSICIÓN CONVECTIVA RÁPIDA A ESCALA NANOMÉTRICA DE MATERIALES COMPUESTOS ACTIVOS PARA LA FABRICACIÓN DE TRANSISTORES ORGÁNICOS DE EFECTO DE CAMPO.
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- Ingenius, Revista Ciencia y Tecnología, 2021, n. 26, p. 9, doi. 10.17163/ings.n26.2021.01
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- Article
Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors.
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- Science & Technology of Advanced Materials, 2023, v. 24, n. 1, p. 1, doi. 10.1080/14686996.2023.2212112
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- Article
Metal doped polyaniline as neuromorphic circuit elements for in-materia computing.
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- Science & Technology of Advanced Materials, 2023, v. 24, n. 1, p. 1, doi. 10.1080/14686996.2023.2178815
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Decade of 2D-materials-based RRAM devices: a review.
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- Science & Technology of Advanced Materials, 2020, v. 21, n. 1, p. 147, doi. 10.1080/14686996.2020.1730236
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- Article
The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors.
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- Science & Technology of Advanced Materials, 2015, v. 16, n. 3, p. 1, doi. 10.1088/1468-6996/16/3/034902
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- Article
An analytical model to assess DC characteristics of independent gate Si FinFETs.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2019, v. 27, n. 4, p. 2456, doi. 10.3906/elk-1812-143
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Design of a high-linear, high-precision analog multiplier, free from body effect.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2016, v. 24, n. 3, p. 820, doi. 10.3906/elk-1307-159
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- Article
Физика нанотранзисторов: 2D-электростатика MOS и модель виртуального истока
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- Nanosistemi, Nanomateriali, Nanotehnologii, 2018, v. 16, n. 4, p. 599
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- Article
Revisiting Analytical Models of N-Type Symmetric Double-Gate MOSFETs.
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- Electronics / Elektronika (1450-5843), 2020, v. 24, n. 1, p. 15, doi. 10.7251/ELS2024015A
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- Article
Molecular Diodes With Tunable Threshold Voltage Based on π‐Extended Tetrathiafulvalene.
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- Advanced Materials Interfaces, 2022, v. 9, n. 27, p. 1, doi. 10.1002/admi.202201238
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- Article