Works matching DE "THIN films in electrical insulation"
Results: 25
Dielectric and thermal characteristics of gel grown single crystals of ytterbium tartrate trihydrate.
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- Journal of Materials Science, 2007, v. 42, n. 22, p. 9324, doi. 10.1007/s10853-007-1907-0
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3D Local Manipulation of the Metal–Insulator Transition Behavior in VO<sub>2</sub> Thin Film by Defect‐Induced Lattice Engineering.
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- Advanced Materials Interfaces, 2018, v. 5, n. 8, p. 1, doi. 10.1002/admi.201701268
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Relation between measured currents and charges in an inhomogeneous sample with anisotropic permittivity during its diagnostics.
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- Journal of Communications Technology & Electronics, 2012, v. 57, n. 11, p. 1216, doi. 10.1134/S1064226912080141
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Cantor Dielectric Filters in Rectangular Waveguides.
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- Electromagnetics, 2009, v. 29, n. 8, p. 575, doi. 10.1080/02726340903287315
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Microstructure, dielectric and photoluminescence properties of Tm-doped Ba<sub>0.8</sub>Sr<sub>0.2</sub>TiO<sub>3 </sub>thin films fabricated by sol–gel method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1184, doi. 10.1007/s10854-007-9523-y
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Dependency of oxygen partial pressure on the characteristics of ZnO films grown by radio frequency magnetron sputtering.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 744, doi. 10.1007/s10854-007-9401-7
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Pulsed laser deposited ZnO films and their humidity sensing behavior.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 788, doi. 10.1007/s10854-007-9414-2
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Temperature dependence of ZnO thin films grown on Si substrate.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 749, doi. 10.1007/s10854-007-9402-6
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Depth profiles and concentration percentages of SiO<sub>2</sub> and SiO<sub> x </sub> induced by ion bombardment of a silicon (100) target.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 898, doi. 10.1007/s10854-008-9658-5
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Nitrogen doping of SiC thin films deposited by RF magnetron sputtering.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 835, doi. 10.1007/s10854-007-9487-y
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Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors.
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- ETRI Journal, 2009, v. 31, n. 6, p. 660, doi. 10.4218/etrij.09.1209.0049
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Thin-film disorientation measurement using the single-crystal Nonius Kappa CCD diffractometer.
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- Journal of Applied Crystallography, 2006, v. 39, n. 6, p. 919, doi. 10.1107/S0021889806037058
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Immobilization of nanobeads on a surface to control the size, shape, and distribution of pores in electrochemically generated sol-gel films.
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- Journal of Solid State Electrochemistry, 2015, v. 19, n. 7, p. 2087, doi. 10.1007/s10008-014-2709-3
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TE Magnetostatic Surface Waves in Symmetric Dielectric Negative Permittivity Material Waveguide.
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- Advances in Condensed Matter Physics, 2009, p. 1, doi. 10.1155/2009/867638
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Method of increasing the electric strength of a dielectric film.
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- Russian Physics Journal, 2007, v. 50, n. 10, p. 1066, doi. 10.1007/s11182-007-0155-8
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Measurement of Dielectric Constant of Thin Film Materials at Microwave Frequencies.
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- Journal of Electromagnetic Waves & Applications, 2009, v. 23, n. 5/6, p. 809, doi. 10.1163/156939309788019831
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Crossover of Ba(Ti,Y)O<sub>3</sub> Solid Solutions to Ba<sub>3</sub>Ti<sub>2</sub>YO<sub>8.5</sub>–BaTiO<sub>3</sub> Composites and their Dielectric Properties.
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- Journal of the American Ceramic Society, 2005, v. 88, n. 10, p. 2775, doi. 10.1111/j.1551-2916.2005.00501.x
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Processing Effects for Integrated PZT: Residual Stress, Thickness, and Dielectric Properties.
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- Journal of the American Ceramic Society, 2005, v. 88, n. 10, p. 2839, doi. 10.1111/j.1551-2916.2005.00641.x
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Control of the spectral dependence of the output signal of a reflection interferometer with a noninverted instrumental function.
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- Optics & Spectroscopy, 2008, v. 104, n. 1, p. 121, doi. 10.1134/S0030400X08010177
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Structure and properties of zirconium oxide thin films prepared by filtered cathodic vacuum arc.
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- Applied Physics A: Materials Science & Processing, 2005, v. 81, n. 2, p. 405, doi. 10.1007/s00339-004-2602-5
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Femtosecond dynamics of dielectric films in the pre-ablation regime.
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- Applied Physics A: Materials Science & Processing, 2005, v. 81, n. 2, p. 317, doi. 10.1007/s00339-005-3216-2
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Low Dielectric Loss and Good Dielectric Thermal Stability of x Nd( Zn<sub>1/2</sub> Ti<sub>1/2</sub>) O<sub>3</sub>-(1− x) Ba<sub>0.6</sub> Sr<sub>0.4</sub> TiO<sub>3</sub> Thin Films Fabricated by Sol-Gel Method.
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- Journal of the American Ceramic Society, 2013, v. 96, n. 3, p. 820, doi. 10.1111/jace.12112
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Ultralow-k nanoporous organosilicate dielectric films imprinted with dendritic spheres.
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- Nature Materials, 2005, v. 4, n. 2, p. 147, doi. 10.1038/nmat1291
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Mitigating the dead-layer effect in nanocapacitors using graded dielectric films.
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- International Journal of Smart & Nano Materials, 2012, v. 3, n. 1, p. 23, doi. 10.1080/19475411.2011.637992
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X-ray reflectometry of nanocomposite metal-dielectric films.
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- Inorganic Materials, 2009, v. 45, n. 14, p. 1640, doi. 10.1134/S0020168509140258
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