Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications.
- Published in:
- Advanced Functional Materials, 2016, v. 26, n. 13, p. 2176, doi. 10.1002/adfm.201504771
- By:
- Publication type:
- Article
Works matching DE "THIN film resistors"
Results: 21
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Embedded thin film resistors fabricated by alkaline electroless deposition.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9766, doi. 10.1007/s10854-015-3647-2
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- Publication type:
- Article
3
Enhanced response and improved selectivity for toxic gases with functionalized CNT thin film resistors.
- Published in:
- Integrated Ferroelectrics, 2017, v. 186, n. 1, p. 65, doi. 10.1080/10584587.2017.1369749
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- Publication type:
- Article
4
Tuning the Amount of Oxygen Vacancies in Sputter‐Deposited SnO<sub>x</sub> films for Enhancing the Performance of Perovskite Solar Cells.
- Published in:
- ChemSusChem, 2018, v. 11, n. 18, p. 3022, doi. 10.1002/cssc.201802048
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- Publication type:
- Article
5
Effect of surfactants on the data directionality and learning behaviour of Al/TiO/FTO thin film memristor-based electronic synapse.
- Published in:
- Journal of Solid State Electrochemistry, 2017, v. 21, n. 9, p. 2753, doi. 10.1007/s10008-016-3459-1
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- Publication type:
- Article
6
Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes.
- Published in:
- International Journal of Photoenergy, 2015, p. 1, doi. 10.1155/2015/483147
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- Publication type:
- Article
7
Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.
- Published in:
- Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1480-z
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- Publication type:
- Article
8
Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.
- Published in:
- Nanoscale Research Letters, 2016, v. 11, p. 1, doi. 10.1186/s11671-016-1480-z
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- Publication type:
- Article
9
29.3: High Resolution Flexible AMOLED with Integrated Gate-Driver using Bulk-Accumulation a-IGZO TFTs.
- Published in:
- SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 423, doi. 10.1002/sdtp.10393
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- Publication type:
- Article
10
P-51: A Compact a-IGZO TFT-Based Digital-to-Analog Converter for Flexible Displays.
- Published in:
- SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 1326, doi. 10.1002/sdtp.10111
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- Publication type:
- Article
11
P.6: An Integrated a-Si:H Gate Driver Circuit Design for Large-sized TFT- LCD Applications.
- Published in:
- 2013
- By:
- Publication type:
- Other
12
Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors.
- Published in:
- Nanomaterials (2079-4991), 2016, v. 6, n. 3, p. 39, doi. 10.3390/nano6030039
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- Publication type:
- Article
13
Substrate-integrated waveguide matching terminations with microwave absorbing material.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 17, p. 1216, doi. 10.1049/el.2014.1279
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- Publication type:
- Article
14
Characteristics research of pressure sensor based on nanopolysilicon thin films resistors.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 26, p. -1, doi. 10.1142/S0217979217501831
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- Publication type:
- Article
15
Thin‐Film Transistors: Top‐Split‐Gate Ambipolar Organic Thin‐Film Transistors (Adv. Electron. Mater. 5/2018).
- Published in:
- 2018
- By:
- Publication type:
- Cover Art
16
A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy.
- Published in:
- Advances in Materials Science & Engineering, 2015, v. 2015, p. 1, doi. 10.1155/2015/847191
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- Publication type:
- Article
17
High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric.
- Published in:
- Materials (1996-1944), 2019, v. 12, n. 6, p. 852, doi. 10.3390/ma12060852
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- Publication type:
- Article
18
Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer.
- Published in:
- Materials (1996-1944), 2017, v. 10, n. 4, p. 429, doi. 10.3390/ma10040429
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- Publication type:
- Article
19
Effect of Annealing Process on the Properties of Ni(55%)Cr(40%)Si(5%) Thin-Film Resistors.
- Published in:
- Materials (1996-1944), 2015, v. 8, n. 10, p. 6752, doi. 10.3390/ma8105338
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- Publication type:
- Article
20
The research of new fibre-optic current sensor based on thin-film resistor.
- Published in:
- Materials Research Innovations, 2015, v. 19, p. S8-38, doi. 10.1179/1432891715Z.0000000001614
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- Publication type:
- Article
21
Structures and Properties of C-Doped NiCr Thin Film Deposited by Closed-Field Unbalanced Magnetron Sputtering.
- Published in:
- Journal of Electronic Materials, 2017, v. 46, n. 1, p. 552, doi. 10.1007/s11664-016-4928-0
- By:
- Publication type:
- Article