Works matching DE "THERMIONIC emission"

Results: 427

Support Vector Machine for Prediction of the Electronic Factors of a Schottky Configuration Interlaid with Pure PVC and Doped by Sm2O3 Nanoparticles.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400624

By:

Azizian‐Kalandaragh, Yashar;
Barkhordari, Ali;
Badali, Yosef

Publication type:

Article

A Study on Annealing Process Influenced Electrical Properties of Ni/CeO2/p‐Si/Al Schottky Barrier Diodes.

Published in:

Macromolecular Symposia, 2021, v. 398, n. 1, p. 1, doi. 10.1002/masy.202000228

By:

Nallabala, Nanda Kumar Reddy;
Kummara, Venkata Krishnaiah;
Chinnappa, Yuvaraj;
George, P. P.;
Manjunath, V.;
Sanniboina, Jagadeesh;
Reddy, S. Manikanteswara;
Gangasani, Nethaji Reddy

Publication type:

Article

Characterization and fabrication of indium doped LaPO4 as an interfacial layer of Cu/In–LaPO4/n–Si and developed for Schottky barrier diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 5, p. 1, doi. 10.1007/s10854-023-09858-x

By:

Priya, R.;
Mariappan, R.;
Chandrasekaran, J.;
Balasubramani, V.

Publication type:

Article

Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 3, p. 1, doi. 10.1007/s10854-022-09659-8

By:

Tuğluoğlu, Nihat;
Eymur, Serkan;
Turan, Neslihan

Publication type:

Article

Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 3, p. 1, doi. 10.1007/s10854-022-09613-8

By:

Bengi, Seda;
Yükseltürk, Esra;
Bülbül, M. Mahir

Publication type:

Article

The effect of structural characteristics of ZnO and NiO thin films on the performance of NiO/ZnO photodetectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 35, p. 26604, doi. 10.1007/s10854-022-09336-w

By:

Hakkoum, Hadjer;
Moumen, Abderrahim;
Ghougali, Mebrouk;
Sengouga, Nouredine;
Comini, Elisabetta

Publication type:

Article

Observation of charge conduction mechanism of manganese ferrite—poly (vinyl alcohol) nanocomposite film above room temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 26, p. 21189, doi. 10.1007/s10854-022-08926-y

By:

Halder, Monalisa;
Atta, Shubhadip;
Sinha, Ranjita;
Meikap, Ajit Kumar

Publication type:

Article

Physical investigations of vanadium oxide thin films on p-Si substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 20, p. 16263, doi. 10.1007/s10854-022-08519-9

By:

Bilgen, Y.;
Pakma, O.;
Kariper, I. A.;
Ozden, S.

Publication type:

Article

Synthesis of canthaxanthin from β-carotene and evaluation of both substances in diode construction.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 4, p. 1888, doi. 10.1007/s10854-021-07389-x

By:

Uzun, İlhan;
Orak, İkram;
Sevgili, Ömer;
Yiğit, Evin;
Karakaplan, Mehmet

Publication type:

Article

The effect of different frequencies and illuminations on the electrical behavior of MoO3/Si heterojunctions.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 23, p. 27950, doi. 10.1007/s10854-021-07176-8

By:

Çaldıran, Zakir;
Taşyürek, Lütfi Bilal;
Nuhoğlu, Yasin

Publication type:

Article

NOA61 photopolymer as an interface for Al/NOA61/p-Si/Al heterojunction MPS device.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 23, p. 27688, doi. 10.1007/s10854-021-07150-4

By:

Özden, Şadan;
Avcı, Nejmettin;
Pakma, Osman;
Kariper, Afşin

Publication type:

Article

Barrier reduction and current transport mechanism in Pt/n-InP Schottky diodes using atomic layer deposited ZnO interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 18, p. 22792, doi. 10.1007/s10854-021-06758-w

By:

Kim, Hogyoung;
Jung, Myeong Jun;
Choi, Byung Joon

Publication type:

Article

Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 12, p. 15732, doi. 10.1007/s10854-021-06124-w

By:

Ulusan, A. Buyukbas;
Tataroglu, A.;
Altındal, Ş.;
Azizian-Kalandaragh, Y.

Publication type:

Article

Determination of surface morphology and electrical properties of MoO3 layer deposited on GaAs substrate with RF magnetron sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 9, p. 12330, doi. 10.1007/s10854-021-05863-0

By:

Çetinkaya, Çağlar;
Çokduygulular, Erman;
Özen, Yunus;
Candan, İdris;
Kınacı, Barış;
Özçelik, Süleyman

Publication type:

Article

Effect of various PCBM doping on the interfacial layer of Al/PCBM:ZnO/p-Si photodiodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 8, p. 10180, doi. 10.1007/s10854-021-05674-3

By:

Öztürk, Teoman

Publication type:

Article

Electrical property investigation of the Au/n-Si and Au/PVA+benzimidazole Co complex/n-Si diodes under ultraviolet illumination.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 5, p. 6323, doi. 10.1007/s10854-021-05348-0

By:

Gökçen, Muharrem;
Taran, Songül;
Orhan, Ersin

Publication type:

Article

A low-level acetone gas sensor based on n-type ZnO/p-type CuO composite nanostructure for the diagnosis of diabetes in dynamic situations.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 4, p. 5199, doi. 10.1007/s10854-021-05251-8

By:

Rezaei, Kimia;
Nasirian, Shahruz

Publication type:

Article

On the electrical and charge conduction properties of thermally evaporated MoOx on n- and p-type crystalline silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 1, p. 1092, doi. 10.1007/s10854-020-04884-5

By:

Gülnahar, Murat;
Nasser, Hisham;
Salimi, Arghavan;
Turan, Raşit

Publication type:

Article

Properties of a facile growth of spray pyrolysis-based rGO films and device performance for Au/rGO/n-InP Schottky diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 1, p. 611, doi. 10.1007/s10854-020-04843-0

By:

CİMİLLİ ÇATIR, Fulya Esra

Publication type:

Article

Light-sensing behaviors of organic/n-Si bio-hybrid photodiodes based on malachite green (MG) organic dye.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 23, p. 21548, doi. 10.1007/s10854-020-04668-x

By:

Yilmaz, Mehmet;
Kocyigit, Adem;
Aydogan, Sakir;
Incekara, Umit;
Tursucu, Ahmet;
Kacus, Hatice

Publication type:

Article

Temperature dependent electronic transport properties of heterojunctions formed between perovskite SrTiO3 nanocubes and silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 23, p. 20833, doi. 10.1007/s10854-020-04597-9

By:

Taşyürek, Lütfi Bilal;
Aydoğan, Şakir;
Sevim, Melike;
Çaldıran, Zakir

Publication type:

Article

Photoresponse properties of coronene nanowires thin-film-based photodiode.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 21, p. 18980, doi. 10.1007/s10854-020-04434-z

By:

Erdal, Mehmet Okan

Publication type:

Article

Electrical characteristics of organic heterojunction with an alternating benzotriazole and fluorene containing copolymer.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 21, p. 18816, doi. 10.1007/s10854-020-04421-4

By:

Gullu, H. H.;
Yildiz, D. E.;
Toppare, L.;
Cirpan, A.

Publication type:

Article

The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD).

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 20, p. 17147, doi. 10.1007/s10854-020-03799-5

By:

Evcin Baydilli, E.;
Altındal, Ş.;
Tecimer, H.;
Kaymaz, A.;
Uslu Tecimer, H.

Publication type:

Article

Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 18, p. 15233, doi. 10.1007/s10854-020-04088-x

By:

Yıldız, D. E.;
Gullu, H. H.;
Toppare, L.;
Cirpan, A.

Publication type:

Article

A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 17, p. 14466, doi. 10.1007/s10854-020-04006-1

By:

Eroğlu, Ayşegül;
Demirezen, Selçuk;
Azizian-Kalandaragh, Yashar;
Altındal, Şemsettin

Publication type:

Article

The effect of radiation on the forward and reverse bias current–voltage (I–V) characteristics of Au/(Bi4Ti3O12/SiO2)/n-Si (MFIS) structures.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 15, p. 12514, doi. 10.1007/s10854-020-03801-0

By:

Dulkadir, S.;
Tecimer, H. Uslu;
Parlaktürk, F.;
Altındal, Ş.;
Karal, Ö.

Publication type:

Article

Material and Si-based diode analyses of sputtered ZnTe thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 14, p. 11390, doi. 10.1007/s10854-020-03688-x

By:

Gullu, H. H.;
Surucu, O. Bayraklı;
Isik, M.;
Terlemezoglu, M.;
Parlak, M.

Publication type:

Article

Electrical characterization of silicon nitride interlayer-based MIS diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 12, p. 9888, doi. 10.1007/s10854-020-03533-1

By:

Buyukbas-Ulusan, A.;
Tataroglu, A.

Publication type:

Article

Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 12, p. 9394, doi. 10.1007/s10854-020-03479-4

By:

Gullu, H. H.;
Yildiz, D. E.;
Surucu, O.;
Parlak, M.

Publication type:

Article

Fabrication of Schottky barrier diodes based on ZnO for flexible electronics.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 10, p. 7373, doi. 10.1007/s10854-019-02736-5

By:

Tinoco, J. C.;
Hernández, S. A.;
Rodríguez-Bernal, O.;
Vega-Poot, A. G.;
Rodríguez-Gattorno, G.;
Olvera, M. de la L.;
Martinez-Lopez, A. G.

Publication type:

Article

Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 2, p. 935, doi. 10.1007/s10854-019-02603-3

By:

Yildiz, D. E.;
Gullu, H. H.;
Sarilmaz, A.;
Ozel, F.;
Kocyigit, A.;
Yildirim, M.

Publication type:

Article

Enhanced low-level acetone detection by zinc/tin bi-metallic oxides nanocomposite with long-term stability.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 2, p. 920, doi. 10.1007/s10854-019-02601-5

By:

Asal, Mohammad;
Nasirian, Shahruz

Publication type:

Article

Investigation of the temperature-dependent electrical properties of Au/PEDOT:WO3/p-Si hybrid device.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 17, p. 16676, doi. 10.1007/s10854-019-02048-8

By:

Keskin, Mine;
Akkaya, Abdullah;
Ayyıldız, Enise;
Uygun Öksüz, Ayşegül;
Özbay Karakuş, Mücella

Publication type:

Article

A comparison of the electrical characteristics of TiO2/p-Si/Ag, GNR-TiO2/p-Si/Ag and MWCNT-TiO2/p-Si/Ag photodiodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 14, p. 13617, doi. 10.1007/s10854-019-01731-0

By:

Erdal, Mehmet Okan;
Yıldırım, Murat;
Kocyigit, Adem

Publication type:

Article

An evaluation of structural, optical and electrical characteristics of Ag/ZnO rods/SnO2/In-Ga Schottky diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 12, p. 10054, doi. 10.1007/s10854-018-9049-5

By:

Küçükömeroğlu, T.;
Bacaksız, E.;
Yılmaz, S.;
Polat, İ.

Publication type:

Article

Analysis of current conduction mechanism in CZTSSe/n-Si structure.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 7, p. 5264, doi. 10.1007/s10854-017-8490-1

By:

Terlemezoglu, M.;
Bayraklı, Ö.;
Güllü, H. H.;
Çolakoğlu, T.;
Yildiz, D. E.;
Parlak, M.

Publication type:

Article

Some physical properties of <italic>n</italic>-IZO/<italic>p</italic>-CuO thin film heterojunction diodes completely made by spray pyrolysis.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 5, p. 4365, doi. 10.1007/s10854-017-8385-1

By:

Asl, Hassan Zare;
Rozati, Seyed Mohammad

Publication type:

Article

Carrier transport mechanisms and photovoltaic characteristics of Au/toluidine blue/n-Si/Al heterojunction solar cell.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 5, p. 3592, doi. 10.1007/s10854-017-8289-0

By:

Zeyada, H. M.;
Youssif, M. I.;
El-Ghamaz, N. A.;
Nasher, M. A.

Publication type:

Article

Study on the electrical properties of ZnSe/Si heterojunction diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 23, p. 17806, doi. 10.1007/s10854-017-7721-9

By:

Güllü, H.;
Bayraklı, Ö.;
Yildiz, D.;
Parlak, M.

Publication type:

Article

Investigation of the some physical properties of Ge-doped ZnO thin films deposited by thermionic vacuum arc technique.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 19, p. 14131, doi. 10.1007/s10854-017-7266-y

By:

Mohammadigharehbagh, Reza;
Özen, Soner;
Yudar, Hafizittin;
Pat, Suat;
Korkmaz, Şadan

Publication type:

Article

Behavior of carrier transports and their sensitivity to solar irradiation for devices that use MoS that is directly deposited on Si using the chemical vapor method.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 19, p. 14430, doi. 10.1007/s10854-017-7304-9

By:

Lin, Yow-Jon;
Su, Ting-Hong;
Chen, Shang-Min

Publication type:

Article

Interpretation of barrier height inhomogeneities in Au/InS/SnO/(In-Ga) structures at low temperatures.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 10, p. 7501, doi. 10.1007/s10854-017-6440-6

By:

Tecimer, H.;
Altındal, Ş.;
Aksu, S.;
Atasoy, Y.;
Bacaksız, E.

Publication type:

Article

Temperature dependence of characteristic parameters of the Au/CH/n-Si Schottky barrier diodes (SBDs) in the wide temperature range.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 5, p. 3987, doi. 10.1007/s10854-016-6011-2

By:

Moraki, K.;
Bengi, S.;
Zeyrek, S.;
Bülbül, M.;
Altındal, Ş.

Publication type:

Article

Facile fabrication of carbon spheres/n-Si junction diodes based on sucrose.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 13044, doi. 10.1007/s10854-016-5445-x

By:

Nieves, Cesar;
Meléndez, Anamaris;
Pinto, Nicholas;
Ramos, Idalia

Publication type:

Article

Effects of temperature and Ti-nonstoichiometry on electric properties of CaCuTiO thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12550, doi. 10.1007/s10854-016-5806-5

By:

Xiao, Mi;
Huang, Haixiao

Publication type:

Article

Charge carrier transport through 3D assemblies of zincblende CdSe and ZnSe quantum dots in weak size-quantization regime.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4944, doi. 10.1007/s10854-015-3006-3

By:

Pejova, Biljana;
Bineva, Irina

Publication type:

Article

Observation of high thermionic field emission current density from spun carbon fibers fabricated from multiwall carbon nanotubes.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 1234, doi. 10.1007/s10854-014-2530-x

By:

Zheng, Zhongxin;
Zhang, Xiaoyu;
Zhang, Zhipeng;
Tan, Renbing;
Zhao, Jingna;
Li, Qinwen;
Qin, Hua

Publication type:

Article

Single Gaussian distribution of barrier height in Al/PS-ZnPc/p-Si type Schottky barrier diode in temperature range of 120-320 K.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 10, p. 4391, doi. 10.1007/s10854-014-2178-6

By:

Sarıyıldız, Asım;
Vural, Özkan;
Evecen, Meryem;
Altındal, Şemsettin

Publication type:

Article

Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surface.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 3, p. 286, doi. 10.1007/s10854-010-0129-4

By:

Jyothi, I.;
Rajagopal Reddy, V.;
Choi, Chel-Jong

Publication type:

Article