Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs.Published in:Semiconductors, 2009, v. 43, n. 6, p. 812, doi. 10.1134/S1063782609060232By:Sakharov, A. V.;Lundin, W. V.;Zavarin, E. E.;Sinitsyn, M. A.;Nikolaev, A. E.;Usov, S. O.;Sizov, V. S.;Mikhailovsky, G. A.;Cherkashin, N. A.;Hytch, M.;Hue, F.;Yakovlev, E. V.;Lobanova, A. V.;Tsatsulnikov, A. F.Publication type:Article