Works matching DE "STRESS Recess (Company)"

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 812, doi. 10.1134/S1063782609060232

By:

• Sakharov, A. V.;
• Lundin, W. V.;
• Zavarin, E. E.;
• Sinitsyn, M. A.;
• Nikolaev, A. E.;
• Usov, S. O.;
• Sizov, V. S.;
• Mikhailovsky, G. A.;
• Cherkashin, N. A.;
• Hytch, M.;
• Hue, F.;
• Yakovlev, E. V.;
• Lobanova, A. V.;
• Tsatsulnikov, A. F.

Publication type:

Article