Works matching DE "STRAY currents"

Results: 1605

Effect of the Ultra-thin GaN Interlayer on the Mechanisms of Conduction in Au/GaAs Schottky Barrier Diodes.

Published in:

Semiconductors, 2025, v. 59, n. 6, p. 551, doi. 10.1134/S1063782624602589

By:

Khales, Hammouche;
Kacha, Arslane Hatem;
Akkal, Boudali;
Benamara, Zineb

Publication type:

Article

Oxygen Doping in Ferroelectric Wurtzite‐type Al0.73Sc0.27N: Improved Leakage and Polarity Control.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400874

By:

Islam, Md Redwanul;
Wolff, Niklas;
Schönweger, Georg;
Kreutzer, Tom‐Niklas;
Brown, Margaret;
Gremmel, Maike;
Ollanescu‐Orendi, Eric S.;
Straňák, Patrik;
Kirste, Lutz;
Brennecka, Geoff L.;
Fichtner, Simon;
Kienle, Lorenz

Publication type:

Article

Perspectives on the Ferroelectric Properties of Gallium Ferrite Thin Films.

Published in:

Advanced Engineering Materials, 2025, v. 27, n. 12, p. 1, doi. 10.1002/adem.202402620

By:

Singh, Vijay;
Maity, Gurupada;
Dubey, Santosh;
Dixit, Achyutesh

Publication type:

Article

Corrosion characteristic of multi-ring shield tunnel containing rubber concrete invert-filling under direct stray current.

Published in:

Underground Space (2096-2754), 2025, v. 22, p. 337, doi. 10.1016/j.undsp.2025.01.002

By:

Shuo Yu;
Hao Jin;
Liangjie Gu;
Peng Gui

Publication type:

Article

Artificial intelligence-assisted method of structural health monitoring of subway shield tunnel based on insulation degradation location.

Published in:

PLoS ONE, 2025, v. 20, n. 6, p. 1, doi. 10.1371/journal.pone.0325296

By:

Zhao, Yiwei;
Wang, Chengtao;
Tao, Yi

Publication type:

Article

A Degradation Warning Method for Ultra-High Voltage Energy Devices Based on Time-Frequency Feature Prediction.

Published in:

Sensors (14248220), 2025, v. 25, n. 11, p. 3478, doi. 10.3390/s25113478

By:

Zhao, Pinzhang;
Wang, Lihui;
Wei, Jian;
Wang, Yifan;
Wu, Haifeng

Publication type:

Article

Failure probability and location identification of damaged insulators using normal function and monitored leakage current.

Published in:

PLoS ONE, 2025, v. 20, n. 6, p. 1, doi. 10.1371/journal.pone.0314708

By:

Monemi, Moein;
Shahrtash, Seyed Mohammad;
Kalantar, Mohsen

Publication type:

Article

Corrosion Performance and Post-Corrosion Evolution of Tensile Behaviors in Rebar Reinforced Ultra-High Performance Concrete.

Published in:

Materials (1996-1944), 2025, v. 18, n. 11, p. 2661, doi. 10.3390/ma18112661

By:

Zhang, Yuchen;
Zhang, Sumei;
Luo, Xianzhi;
Wang, Chaofan

Publication type:

Article

Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction Detector.

Published in:

Materials (1996-1944), 2025, v. 18, n. 11, p. 2413, doi. 10.3390/ma18112413

By:

Mancuso, Alfio Samuele;
Sangregorio, Enrico;
Muoio, Annamaria;
De Luca, Saverio;
Kushoro, Matteo Hakeem;
Gallo, Erik;
Vanellone, Silvia;
Quadrivi, Eleonora;
Trotta, Antonio;
Calcagno, Lucia;
Via, Francesco La

Publication type:

Article

Effect of Low-Energy Proton Radiation on the Degradation of Silicon Carbide Schottky Diodes.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5984, doi. 10.1007/s11664-025-11939-y

By:

Baba, Tamana;
Hasbullah, Nurul Fadzlin;
Javed, Yasir;
Khan, Zafar Iqbal;
Sulaiman, Nurul Nabiilah

Publication type:

Article

Volatile to Non‐Volatile Switching Transition in Chalcogenides.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 23, p. 1, doi. 10.1002/adfm.202423940

By:

Zhao, Zihao;
Zhang, Mengfei;
Yang, Qun;
Gotoh, Tamihiro;
Ge, Qingqin;
Shi, Nannan;
Sun, Yuting;
Zhao, Jiayi;
Sui, Yanping;
Jiang, Ran;
Yu, Haibin;
Elliott, Stephen R.;
Song, Zhitang;
Zhu, Min

Publication type:

Article

非对称沟槽SiC MOSFET单粒子栅穿机理研究.

Published in:

Atomic Energy Science & Technology, 2025, v. 59, n. 4, p. 957, doi. 10.7538/yzk.2024.youxian.0629

By:

王立昊;
董涛;
方星宇;
戚晓伟;
王亮;
陈淼;
张兴;
赵元富

Publication type:

Article

Attempt to Impart Conductivity to Thallium Bromide by Thermal Diffusion Doping.

Published in:

Sensors & Materials, 2025, v. 37, n. 5, Part 2, p. 1969, doi. 10.18494/SAM5588

By:

Naoya Yamaishi;
Mikio Higuchi;
Satoshi Yoshitake;
Kaneko, Junichi H.

Publication type:

Article

High-temperature Operation Characteristics of Diamond Radiation Detectors.

Published in:

Sensors & Materials, 2025, v. 37, n. 5, Part 2, p. 1959, doi. 10.18494/SAM5528

By:

Masakatsu Tsubota;
Takehiro Shimaoka;
Yuto Akashi;
Shintaro Hirano;
Akiyoshi Chayahara;
Yukako Kato;
Hitoshi Umezawa;
Hideyuki Watanabe;
Yoshiaki Mokuno;
Kaneko, Junichi H. Kaneko

Publication type:

Article

Improve the Photoelectric Properties of Transparent Insulating Films Through Simple Mechanical Pressure Treatment.

Published in:

Journal of Applied Polymer Science, 2025, v. 142, n. 26, p. 1, doi. 10.1002/app.56958

By:

Chen, Jun;
Li, Yanzheng;
Wei, Ganghui;
Zhang, Chentong;
Liu, Qiming;
Luo, Xuetao

Publication type:

Article

A Cascade Bilayer Electron-Transporting Layer for Enhanced Performance and Stability of Self-Powered All-Inorganic Perovskite Photodetectors.

Published in:

Molecules, 2025, v. 30, n. 10, p. 2195, doi. 10.3390/molecules30102195

By:

Kim, Yu Hyun;
Jung, Jae Woong

Publication type:

Article

A 62.54 nW Carbon–Silicon Heterogeneous-Integrated SRAM with Novel Low-Power Memory Cell.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 2004, doi. 10.3390/electronics14102004

By:

Gan, Qiaoying;
Zheng, Weiyi;
Chen, Zhifeng;
Zhang, Yuyan;
Chen, Chengying;
Huang, Xindong

Publication type:

Article

Relation Between Thickness and TFTs Properties of HfO 2 Dielectric Layer Synthesized by Plasma-Enhanced Atomic Layer Deposition.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 10, p. 719, doi. 10.3390/nano15100719

By:

Chen, Qizhen;
Fu, Wanqiang;
Han, Jing;
Zhang, Xiaoying;
Lien, Shui-Yang

Publication type:

Article

The Impact of Stray Currents on Chloride Transport in the Concrete of Urban Rail Transit Structures.

Published in:

Buildings (2075-5309), 2025, v. 15, n. 10, p. 1695, doi. 10.3390/buildings15101695

By:

Ni, Yuancheng;
Zhu, Eryu;
Chen, Liangjiang

Publication type:

Article

Impact of the Guard Rings on Self-Induced Signal and Leakage Current in Trench-Isolated Low Gain Avalanche Diodes.

Published in:

Sensors (14248220), 2025, v. 25, n. 10, p. 3006, doi. 10.3390/s25103006

By:

Lastovicka-Medin, Gordana;
Kramberger, Gregor;
Kroll, Jiri;
Rebarz, Mateusz

Publication type:

Article

Research on the Degradation and Failure Mechanisms of the Unclamped-Inductive-Switching Characteristics of p-GaN HEMT Devices.

Published in:

Micromachines, 2025, v. 16, n. 5, p. 514, doi. 10.3390/mi16050514

By:

Liu, Li;
Zhen, Yulu;
Li, Siqiao;
Pang, Bo;
Zeng, Kai

Publication type:

Article

Study on the performance optimization of circular dielectric elastomer membrane actuator by charge compensation methods.

Published in:

Acta Mechanica, 2025, v. 236, n. 6, p. 3629, doi. 10.1007/s00707-025-04343-4

By:

Miao, Guang-hong;
Yuan, Cheng;
Chu, Xiang-yu;
Li, Shun;
Zhu, Shi-qiang;
Zhao, Si-lu

Publication type:

Article

Microstructure and Electrical Properties of Scandium-Doped Aluminum Nitride Thin Film.

Published in:

Coatings (2079-6412), 2025, v. 15, n. 5, p. 549, doi. 10.3390/coatings15050549

By:

Chen, Jiaqiang;
Zhang, Junxi;
Fan, Zhiyang;
Yu, Ping

Publication type:

Article

Modeling and optimization of a relativistic magnetron with transparent cathode and $\textrm{TE}_{11}$ output mode.

Published in:

International Journal of Microwave & Wireless Technologies, 2024, v. 16, n. 10, p. 1641, doi. 10.1017/S1759078724000151

By:

Sawert, David;
Vallejos, Pablo;
Nyberg, Frans;
Hurtig, Tomas

Publication type:

Article

Location of the Ground Electrode can Minimize the Leakage Current Interference During the Evoked Potential Monitoring.

Published in:

Neurology India, 2023, v. 71, n. 1, p. 194, doi. 10.4103/0028-3886.370444

By:

Vaithialingam, Balaji;
Chakrabarti, Dhritiman

Publication type:

Article

Core–Shell Incorporated Analytical Modeling of a Dual-Material Gate Junctionless Nanowire: Extraction of Subthreshold Characteristics: Core–Shell-Incorporated Analytical Modeling of a Dual-Material Gate Junctionless Nanowire...: Bharti, P. Mittal

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 4, p. 3046, doi. 10.1007/s11664-025-11737-6

By:

Bharti;
Mittal, Poornima

Publication type:

Article

Investigating the Impact of Fe-Doped GaN and β-Ga2O3 Buffer Layers on a Laterally Scaled AlN/GaN HEMT Using Silicon Carbide Substrate for Next-Generation RF Electronics.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2355, doi. 10.1007/s11664-024-11672-y

By:

Devi, K. Nirmala;
Hariprasad, S.;
Natarajan, Ramkumar;
Chinnaswamy, Sivamani;
Ravi, S.

Publication type:

Article

Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN/GaN MIS-HEMTs Using ZrO2 Seed Layers: Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated...: Tien-Han Yu et al

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 2, p. 1096, doi. 10.1007/s11664-024-11600-0

By:

Yu, Tien-Han;
Chen, Yu-Lin;
Tsao, Yi-Fan;
Hsu, Chin-Tsai;
Lu, Tsan-Feng;
Hsu, Heng-Tung

Publication type:

Article

Improvement of Breakdown Characteristic for a Novel GaN HEMT with Enhanced Resistance Single-Event Transient Effect.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 1, p. 784, doi. 10.1007/s11664-024-11579-8

By:

Sun, Shuxiang;
Zhang, Yajun;
Si, Yihan;
Xiong, Juan;
Luo, Xiaorong

Publication type:

Article

Structural Evolution, Piezoelectric and Ferroelectric Properties of (1−x)Bi4Ti3O12-xCaBi2Nb2O9 High-Temperature Composite Ceramics: Structural Evolution and Piezoelectric and Ferroelectric...: Z. Zhang et al

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 1, p. 370, doi. 10.1007/s11664-024-11527-6

By:

Zhang, Zhipeng;
Shen, Zong-Yang;
Wang, Zhumei;
Zeng, Tao;
Luo, Wenqin;
Song, Fusheng;
Li, Yueming

Publication type:

Article

Study of Di-/Ferro-/Piezoelectric Properties of Sm3+-Doped ZnO Nanoparticles.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 1, p. 76, doi. 10.1007/s11664-024-11480-4

By:

Verma, Radha;
Goel, Sahil;
Verma, Komal;
Kant, Krishan;
Kumar, Rajesh;
Garg, Maneesha;
Gupta, Rashi

Publication type:

Article

Insight on Work-Function and Gate Oxide-Engineered Negative-Capacitance TFET for Enhanced Analog/RF Performance and DC Characteristics in High-Frequency Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 12, p. 8126, doi. 10.1007/s11664-024-11519-6

By:

Sachan, Rajeev Kumar;
Vedvrat;
Gupta, Vidyadhar;
Bajpai, Shrish

Publication type:

Article

Effect of Oxygen Vacancy on Improving the Properties of ZnO-Bi2O3-Based Varistors.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 12, p. 8118, doi. 10.1007/s11664-024-11513-y

By:

Cao, Wenbin;
Gou, Chenyuan;
Liu, Shihua;
Liu, Jianke

Publication type:

Article

Effects of Various Substrates on the Structure and Properties of BiFe0.91Zr0.09O3 Thin Films.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 11, p. 6792, doi. 10.1007/s11664-024-11376-3

By:

Jiang, Zhen;
Ma, Zhibiao;
Liu, Yuan;
He, Jingxian;
Sun, Shuhui;
Jing, Zhenfeng;
Zhang, Fengqing

Publication type:

Article

Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3887, doi. 10.1007/s11664-024-11100-1

By:

Venkatesan, R. S.;
Manickam, Rajeswari;
Duraipandi, Brindha;
Sugathan, Krishnapriya Kottakkal

Publication type:

Article

High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3415, doi. 10.1007/s11664-024-11074-0

By:

Das, Partha

Publication type:

Article

PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2798, doi. 10.1007/s11664-024-10966-5

By:

Spencer, Joseph A.;
Jacobs, Alan G.;
Hobart, Karl D.;
Koehler, Andrew D.;
Anderson, Travis J.;
Zhang, Yuhao;
Tadjer, Marko J.

Publication type:

Article

Properties of Al doped CdZnTe film by aluminium induced crystallisation.

Published in:

Surface Engineering, 2016, v. 32, n. 3, p. 190, doi. 10.1179/1743294415Y.0000000067

By:

Zeng, D.;
Mu, Y.;
Meng, J.;
Liu, W.;
Chen, F.;
Zhou, H.

Publication type:

Article

Ferroelectric Sb-doped PMN-PT crystal: high electromechanical response with true-remanent polarization and resistive leakage analyses.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19567, doi. 10.1007/s10854-018-0088-8

By:

Hussain, Abid;
Sinha, Nidhi;
Joseph, Abhilash J.;
Goel, Sahil;
Kumar, Binay

Publication type:

Article

Reduction of leakage current at the SiNx/GaN interface in GaN Schottky diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19353, doi. 10.1007/s10854-018-0064-3

By:

Kolli, Sowmya;
Sunkara, Mahendra;
Alphenaar, Bruce

Publication type:

Article

Leakage mechanisms of sol-gel derived multiferroic Bi5Ti3FeO15 thin films of layered perovskite.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 16027, doi. 10.1007/s10854-018-9690-z

By:

Li, Jin;
Luo, Li;
Feng, Linyan;
Liang, Kaili;
Su, Jie;
Lu, Chaojing

Publication type:

Article

Growth and electrical properties of epitaxial 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin film by pulsed laser deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 8, p. 6779, doi. 10.1007/s10854-018-8664-5

By:

Jiao, Shan;
Tang, Yanxue;
Zhao, Xiangyong;
Wang, Tao;
Duan, Zhihua;
Wang, Feifei;
Sun, Dazhi;
Luo, Haosu;
Shi, Wangzhou

Publication type:

Article

Latest advancement of fully additive process for 8 µm ultra-fine pitch chip-on-film (COF) by nano-size Ni-P metallization.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 8, p. 6937, doi. 10.1007/s10854-018-8680-5

By:

Pun, Kelvin P. L.;
Ali, Lafir;
Kohtoku, Makoto;
Cheung, Chee-Wah;
Chan, Alan H. S.;
Wong, C. P.

Publication type:

Article

Optical and transport properties of new double perovskite oxide.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 8, p. 6215, doi. 10.1007/s10854-018-8597-z

By:

Pattanayak, D. K.;
Parida, R. K.;
Nayak, Nimai C.;
Panda, A. B.;
Parida, B. N.

Publication type:

Article

Improvement of the physical properties of novel (1 − x) CoFeO + ( x) LaFeO nanocomposites for technological applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 21, p. 16547, doi. 10.1007/s10854-017-7567-1

By:

Ateia, Ebtesam;
Abdelamksoud, M.;
Rizk, M.

Publication type:

Article

Effects of transition metal (Cu, Zn, Mn) doped on leakage current and ferroelectric properties of BiFeO thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 20, p. 14944, doi. 10.1007/s10854-017-7366-8

By:

Yang, Shiju;
Zhang, Fengqing;
Xie, Xiaobin;
Guo, Xiaodong;
Zhang, Liping;
Fan, Suhua

Publication type:

Article

Reduction the leakage current through povidone-SiO nano-composite as a promising gate dielectric of FETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 18, p. 13313, doi. 10.1007/s10854-017-7167-0

By:

Hashemi, Adeleh;
Bahari, Ali;
Ghasemi, Shahram

Publication type:

Article

The microstructure, leakage current and dielectric behaviors of (Nd,Ti)-codoped BiFeO thin films: effect of deposited substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 4, p. 3423, doi. 10.1007/s10854-016-5939-6

By:

Yang, C.;
Lv, P.;
Song, J.;
Leng, J.;
Sun, X.

Publication type:

Article

Effects of Mn doping on dielectric and ferroelectric characteristics of lead-free (K, Na, Li)NbO thin films grown by chemical solution deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 487, doi. 10.1007/s10854-016-5547-5

By:

Zhang, Xinxiu;
Li, Ziquan;
Liu, Jinsong;
Zhu, Kongjun;
Wang, Jing;
Qiu, Jinhao

Publication type:

Article

Dielectric-electrode interactions in glass and silicon-compatible thin-film (Ba,Sr)TiO capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 595, doi. 10.1007/s10854-016-5563-5

By:

Gandhi, Saumya;
Xiang, Shu;
Kumar, Manish;
Sharma, Himani;
Chakraborti, Parthasarathi;
Raj, P.;
Tummala, Rao

Publication type:

Article