Thermal Stability Analysis of Single-Ended 9T-ST Robust SRAM Cell for Near-Threshold Operation.
- Published in:
- International Journal of Nanoscience, 2021, v. 20, n. 6, p. 1, doi. 10.1142/S0219581X21500575
- By:
- Publication type:
- Article
Works about STATIC random access memory
Results: 502
1
2
Voltage Contrast Imaging with Energy-Controlled Signal in an FE-SEM.
- Published in:
- 2019
- By:
- Publication type:
- Abstract
3
On the Maximum Value of a Cell in a Specified Set of Cells for the Nonhomogeneous Generalized Allocation Scheme.
- Published in:
- Journal of Mathematical Sciences, 2020, v. 248, n. 1, p. 14, doi. 10.1007/s10958-020-04851-9
- By:
- Publication type:
- Article
4
Guest Editorial: Energy‐efficient Computing for Embedded and IoTDevices.
- Published in:
- 2019
- Publication type:
- Editorial
5
Write‐variation aware alternatives to replace SRAM buffers with non‐volatile buffers in on‐chip interconnects.
- Published in:
- IET Computers & Digital Techniques (Wiley-Blackwell), 2019, v. 13, n. 6, p. 481, doi. 10.1049/iet-cdt.2019.0039
- By:
- Publication type:
- Article
6
Hetro8T: power and area efficient approximate heterogeneous 8T SRAM for H.264 video decoder.
- Published in:
- IET Computers & Digital Techniques (Wiley-Blackwell), 2019, v. 13, n. 6, p. 505, doi. 10.1049/iet-cdt.2019.0019
- By:
- Publication type:
- Article
7
Hardware Architecture Design for High-performance H.264/AVC Deblocking Filter.
- Published in:
- Sensors & Materials, 2019, v. 31, n. 3, Part 3, p. 905, doi. 10.18494/SAM.2019.2163
- By:
- Publication type:
- Article
8
Design and Verification of Cyber-Physical Systems Specified by Petri Nets—A Case Study of a Direct Matrix Converter.
- Published in:
- Mathematics (2227-7390), 2019, v. 7, n. 9, p. 812, doi. 10.3390/math7090812
- By:
- Publication type:
- Article
9
Enhanced Dual Carry Approximate Adder with Error Reduction Unit for High-Performance Multiplier and In-Memory Computing.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 9, p. 1702, doi. 10.3390/electronics14091702
- By:
- Publication type:
- Article
10
Efficient Modeling and Usage of Scratchpad Memory for Artificial Intelligence Accelerators.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 5, p. 1032, doi. 10.3390/electronics14051032
- By:
- Publication type:
- Article
11
Shallow Learning-Based Intrusion Detection System for In-Vehicle Network: ASIC Implementation.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 4, p. 683, doi. 10.3390/electronics14040683
- By:
- Publication type:
- Article
12
Novel Low-Power Computing-In-Memory (CIM) Design for Binary and Ternary Deep Neural Networks by Using 8T XNOR SRAM.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 23, p. 4828, doi. 10.3390/electronics13234828
- By:
- Publication type:
- Article
13
A Variation-Aware Binary Neural Network Framework for Process Resilient In-Memory Computations.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 19, p. 3847, doi. 10.3390/electronics13193847
- By:
- Publication type:
- Article
14
Synergistic Effects of Total Ionizing Dose and Single-Event Upset in 130 nm 7T Silicon-on-Insulator Static Random Access Memory.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 15, p. 2997, doi. 10.3390/electronics13152997
- By:
- Publication type:
- Article
15
TA-Quatro: Soft Error-Resilient and Power-Efficient SRAM Cell for ADC-Less Binary Weight and Ternary Activation In-Memory Computing.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 15, p. 2904, doi. 10.3390/electronics13152904
- By:
- Publication type:
- Article
16
Leakage Power Attack-Resilient Design: PMOS-Reading 9T SRAM Cell.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 13, p. 2551, doi. 10.3390/electronics13132551
- By:
- Publication type:
- Article
17
Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 12, p. 2233, doi. 10.3390/electronics13122233
- By:
- Publication type:
- Article
18
Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 11, p. 2012, doi. 10.3390/electronics13112012
- By:
- Publication type:
- Article
19
Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 10, p. 1954, doi. 10.3390/electronics13101954
- By:
- Publication type:
- Article
20
Investigation of Single-Event Effects for Space Applications: Instrumentation for In-Depth System Monitoring.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 10, p. 1822, doi. 10.3390/electronics13101822
- By:
- Publication type:
- Article
21
Energy Efficient CLB Design Based on Adiabatic Logic for IoT Applications.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 7, p. 1309, doi. 10.3390/electronics13071309
- By:
- Publication type:
- Article
22
An Energy Consumption Model for SRAM-Based In-Memory-Computing Architectures.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 6, p. 1121, doi. 10.3390/electronics13061121
- By:
- Publication type:
- Article
23
Charge-Domain Static Random Access Memory-Based In-Memory Computing with Low-Cost Multiply-and-Accumulate Operation and Energy-Efficient 7-Bit Hybrid Analog-to-Digital Converter.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 3, p. 666, doi. 10.3390/electronics13030666
- By:
- Publication type:
- Article
24
A Reconfigurable SRAM CRP PUF with High Reliability and Randomness.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 2, p. 309, doi. 10.3390/electronics13020309
- By:
- Publication type:
- Article
25
Study of Single-Event Effects Influenced by Displacement Damage Effects under Proton Irradiation in Static Random-Access Memory.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 24, p. 5028, doi. 10.3390/electronics12245028
- By:
- Publication type:
- Article
26
Soft Error Simulation of Near-Threshold SRAM Design for Nanosatellite Applications.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 18, p. 3968, doi. 10.3390/electronics12183968
- By:
- Publication type:
- Article
27
Soft-Error-Aware Radiation-Hardened Ge-DLTFET-Based SRAM Cell Design.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 14, p. 3198, doi. 10.3390/electronics12143198
- By:
- Publication type:
- Article
28
Hardware Design and Implementation of a Lightweight Saber Algorithm Based on DRC Method.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 11, p. 2525, doi. 10.3390/electronics12112525
- By:
- Publication type:
- Article
29
An Implantable Bio-Signal Sensor SoC with Low-Standby-Power 8K-Bit SRAM for Continuous Long-Term Monitoring.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 10, p. 2317, doi. 10.3390/electronics12102317
- By:
- Publication type:
- Article
30
Design and Implementation of CNFET SRAM Cells by Using Multi-Threshold Technique.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 7, p. 1611, doi. 10.3390/electronics12071611
- By:
- Publication type:
- Article
31
SRAM Compilation and Placement Co-Optimization for Memory Subsystems.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 6, p. 1353, doi. 10.3390/electronics12061353
- By:
- Publication type:
- Article
32
A Novel 8T XNOR-SRAM: Computing-in-Memory Design for Binary/Ternary Deep Neural Networks.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 4, p. 877, doi. 10.3390/electronics12040877
- By:
- Publication type:
- Article
33
Design and Performance Analysis of 32 × 32 Memory Array SRAM for Low-Power Applications.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 4, p. 834, doi. 10.3390/electronics12040834
- By:
- Publication type:
- Article
34
Design of Cost-Efficient SRAM Cell in Quantum Dot Cellular Automata Technology.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 2, p. 367, doi. 10.3390/electronics12020367
- By:
- Publication type:
- Article
35
Soft Error Sensitivity Analysis Based on 40 nm SRAM-Based FPGA.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 23, p. 3844, doi. 10.3390/electronics11233844
- By:
- Publication type:
- Article
36
Method for Improving the Reliability of SRAM-Based PUF Using Convolution Operation.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 21, p. 3493, doi. 10.3390/electronics11213493
- By:
- Publication type:
- Article
37
Study on Single Event Upsets in a 28 nm Technology Static Random Access Memory Device Based on Micro-Beam Irradiation.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 20, p. 3413, doi. 10.3390/electronics11203413
- By:
- Publication type:
- Article
38
Tunnel FET and MOSFET Hybrid Integrated 9T SRAM with Data-Aware Write Technique for Ultra-Low Power Applications.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 20, p. 3392, doi. 10.3390/electronics11203392
- By:
- Publication type:
- Article
39
Ethernet Packet to USB Data Transfer Bridge ASIC with Modbus Transmission Control Protocol Based on FPGA Development Kit.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 20, p. 3269, doi. 10.3390/electronics11203269
- By:
- Publication type:
- Article
40
The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 19, p. 3188, doi. 10.3390/electronics11193188
- By:
- Publication type:
- Article
41
Low-Power Energy-Based Spike Detector ASIC for Implantable Multichannel BMIs.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 18, p. N.PAG, doi. 10.3390/electronics11182943
- By:
- Publication type:
- Article
42
A Fully Polarity-Aware Double-Node-Upset-Resilient Latch Design.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 15, p. 2465, doi. 10.3390/electronics11152465
- By:
- Publication type:
- Article
43
Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 11, p. 1757, doi. 10.3390/electronics11111757
- By:
- Publication type:
- Article
44
TECED: A Two-Dimensional Error-Correction Codes Based Energy-Efficiency SRAM Design.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 10, p. N.PAG, doi. 10.3390/electronics11101638
- By:
- Publication type:
- Article
45
Low Computing Leakage, Wide-Swing Output Compensation Circuit for Linearity Improvement in SRAM Multi-Row Read Computing-in-Memory.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 9, p. N.PAG, doi. 10.3390/electronics11091376
- By:
- Publication type:
- Article
46
Leakage Current Stability Analysis for Subthreshold SRAM.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 8, p. 1196, doi. 10.3390/electronics11081196
- By:
- Publication type:
- Article
47
Novel In-Memory Computing Adder Using 8 + T SRAM.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 6, p. 929, doi. 10.3390/electronics11060929
- By:
- Publication type:
- Article
48
Design of Ultra-Low Voltage/Power Circuits and Systems.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 4, p. 607, doi. 10.3390/electronics11040607
- By:
- Publication type:
- Article
49
High-Density Solid-State Memory Devices and Technologies.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 4, p. 538, doi. 10.3390/electronics11040538
- By:
- Publication type:
- Article
50
Exploiting Data Compression for Adaptive Block Placement in Hybrid Caches.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 2, p. 240, doi. 10.3390/electronics11020240
- By:
- Publication type:
- Article