Works matching DE "STATIC random access memory"

Results: 498

Hybrid Imaging Agents for Pretargeting Applications Based on Fusarinine C—Proof of Concept.

Published in:

Molecules, 2020, v. 25, n. 9, p. 2123, doi. 10.3390/molecules25092123

By:

Summer, Dominik;
Petrik, Milos;
Mayr, Sonja;
Hermann, Martin;
Kaeopookum, Piriya;
Pfister, Joachim;
Klingler, Maximilian;
Rangger, Christine;
Haas, Hubertus;
Decristoforo, Clemens;
Boschi, Alessandra;
Martini, Petra

Publication type:

Article

scOrange—a tool for hands-on training of concepts from single-cell data analytics.

Published in:

Bioinformatics, 2019, v. 35, n. 14, p. i4, doi. 10.1093/bioinformatics/btz348

By:

Stražar, Martin;
Žagar, Lan;
Kokošar, Jaka;
Tanko, Vesna;
Erjavec, Aleš;
Poličar, Pavlin G;
Starič, Anže;
Demšar, Janez;
Shaulsky, Gad;
Menon, Vilas;
Lemire, Andrew;
Parikh, Anup;
Zupan, Blaž

Publication type:

Article

A 1.0 fJ energy/bit single‐ended 1 kb 6T SRAM implemented using 40 nm CMOS process.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2023, v. 17, n. 2, p. 75, doi. 10.1049/cds2.12141

By:

Wang, Chua‐Chin;
Sangalang, Ralph Gerard B.;
Tseng, I‐Ting;
Chiu, Yi‐Jen;
Lin, Yu‐Cheng;
Jose, Oliver Lexter July A.

Publication type:

Article

Challenges and solutions of working under threshold supply‐voltage, for CNTFET‐based SRAM‐bitcell.

Published in:: IET Circuits, Devices & Systems (Wiley-Blackwell), 2022, v. 16, n. 8, p. 569, doi. 10.1049/cds2.12126
Publication type:: Article

Design of a multi‐mode digital pixel with conversion data protection.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2022, v. 16, n. 7, p. 501, doi. 10.1049/cds2.12122

By:

Ma, Yan‐Hua;
Kong, Xiang‐He;
Chang, Yu‐Chun

Publication type:

Article

9T fast‐write SRAM bit cell with no conflicts for ultra‐low voltage.

Published in:

Electronics Letters (Wiley-Blackwell), 2024, v. 60, n. 17, p. 1, doi. 10.1049/ell2.70039

By:

Jiang, Chenjie;
Wen, Junqi;
Meng, Siyu;
Fu, Kepu;
Xia, Changquan;
Chen, Haitao;
Qian, Qinyu;
Cheng, Liwen

Publication type:

Article

Implementation and Determining Low Power Analysis of Various Structures of SRAM Cell.

Published in:

Grenze International Journal of Engineering & Technology (GIJET), 2017, v. 3, n. 3, p. 78

By:

Lakshmidevi, T. R.

Publication type:

Article

SCALING THE MEMORY RELIABILITY WALL.

Published in:

Intel Technology Journal, 2013, v. 17, n. 1, p. 18

By:

Wilkerson, Chris;
Alameldeen, Alaa;
Chishti, Zeshan

Publication type:

Article

Carbon Nanotube Based Variation Tolerant Low Power Cache Memory for 5G Networks.

Published in:

Iranian Journal of Electrical & Electronic Engineering, 2024, v. 20, n. 2, p. 1

By:

Kavitha, M.;
Janani, P. K.;
Karthick, S.;
Arulsivam, S.;
Vikram, C.;
Hariharan, G.;
Kavinkumar, R.;
Ganesh, P.

Publication type:

Article

Ultra-Low Power 5T-SRAM Cell Design using different CNTFET for exploiting Read/Write Assist Techniques.

Published in:

Iranian Journal of Electrical & Electronic Engineering, 2023, v. 19, n. 1, p. 1, doi. 10.22068/IJEEE.19.1.2699.

By:

Kumar, G. S.;
Mamatha, G.

Publication type:

Article

Dolina Šentflorjanska, Pozdravljena!

Published in:

Maska, 2017, v. 32, n. 187/188, p. 6, doi. 10.1386/maska.32.187-188.6_7

By:

Möderndorfer, Vinko

Publication type:

Article

OPTIMIZED RESISTIVE RAM USING 2T2R CELL AND IT'S ARRAY PERFORMANCE COMPARISON WITH OTHER CELLS.

Published in:

Archives for Technical Sciences / Arhiv za Tehnicke Nauke, 2025, n. 32, p. 44, doi. 10.70102/afts.2025.1732.044

By:

Joy, Ancy;
Kuruvilla, Jinsa

Publication type:

Article

Reconfigurable negative bit line collapsed supply write-assist for 9T-ST static random access memory cell.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2023, v. 13, n. 4, p. 3747, doi. 10.11591/ijece.v13i4.pp3747-3755

By:

Ganesh, Chokkakula;
Noorbasha, Fazal;
Murthy, Korlapati Satyanarayana

Publication type:

Article

A novel optimization framework for controlling stabilization issue in design principle of FinFET based SRAM.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2019, v. 9, n. 5, p. 4027, doi. 10.11591/ijece.v9i5.pp4027-4034

By:

H., Girish;
D. R., Shahshikumar

Publication type:

Article

Energy optimization of 6T SRAM cell using low-voltage and high-performance inverter structures.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2019, v. 9, n. 3, p. 1606, doi. 10.11591/ijece.v9i3.pp1606-1619

By:

Reddy, M. Madhusudhan;
Sailaja, M.;
Babulu, K.

Publication type:

Article

PAOD: a predictive approach for optimization of design in FinFET/SRAM.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2019, v. 9, n. 2, p. 960, doi. 10.11591/ijece.v9i2.pp960-966

By:

H., Girish;
D. R., Shashikumar

Publication type:

Article

Design of a Nonvolatile 8T1R SRAM Cell for Instant-On Operation.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2016, v. 6, n. 3, p. 1183, doi. 10.11591/ijece.v6i3.9448

By:

Mounica, J.;
Ganes, G. V.

Publication type:

Article

Impact of Energy Dependence on Ground Level and Avionic SEE Rate Prediction When Applying Standard Test Procedures.

Published in:

Aerospace (MDPI Publishing), 2019, v. 6, n. 11, p. 119, doi. 10.3390/aerospace6110119

By:

Cecchetto, Matteo;
García Alía, Rubén;
Wrobel, Frédéric

Publication type:

Article

Nonvolatile flip-flop based on pseudo-spin-transistor architecture and its nonvolatile power-gating applications for low-power CMOS logic.

Published in:

European Physical Journal - Applied Physics, 2013, v. 63, n. 1, p. 00, doi. 10.1051/epjap/2013120486

By:

Yamamoto, Shuu’ichirou;
Shuto, Yusuke;
Sugahara, Satoshi

Publication type:

Article

Introducing edge intelligence to smart meters via federated split learning.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-53352-9

By:

Li, Yehui;
Qin, Dalin;
Poor, H. Vincent;
Wang, Yi

Publication type:

Article

Power and Area Efficient 9T CNTFET SRAM Bit Cells with Differential Read Scheme for Low Power Applications.

Published in:

Journal of Engineering Science & Technology Review, 2022, v. 15, n. 2, p. 40, doi. 10.25103/jestr.152.06

By:

Valluri, Aswini;
Musala, Sarada

Publication type:

Article

CeidMem: A compact Static Memory Library.

Published in:

Journal of Engineering Science & Technology Review, 2016, v. 9, n. 4, p. 138

By:

Simopoulos, T.;
Haniotakis, T.;
Alexiou, G. Ph.

Publication type:

Article

AMCB: enhancing the authentication process with blockchain integrated with PUF and machine learning.

Published in:

Multimedia Tools & Applications, 2025, v. 84, n. 8, p. 4809, doi. 10.1007/s11042-024-18950-1

By:

Al-Ghuraybi, Hind A.;
AlZain, Mohammed A.;
Soh, Ben

Publication type:

Article

Research on soft errors induced by alpha particles and atmospheric neutrons based on 28 nm field programmable gate array.

Published in:

Journal of Nuclear Science & Technology, 2025, v. 62, n. 7, p. 670, doi. 10.1080/00223131.2025.2462190

By:

Ma, Chao;
Du, Xuecheng;
Zhao, Xu;
Hu, Zhiliang;
Zhang, Panfeng;
Zhou, Chao;
Zheng, Bo;
Wang, Xiaodong;
Feng, Song

Publication type:

Article

Proficient Static RAM design using Sleepy Keeper Leakage Control Transistor & PT-Decoder for handheld application.

Published in:

Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials, 2018, v. 48, n. 4, p. 197, doi. 10.33180/InfMIDEM2018.401

By:

Pousia, S.;
Manjith, R.

Publication type:

Article

Comprehensive Optimization of Dual Threshold Independent-Gate FinFET and SRAM Cells.

Published in:

Active & Passive Electronic Components, 2018, p. 1, doi. 10.1155/2018/4512924

By:

Ni, Haiyan;
Hu, Jianping;
Yang, Huishan;
Zhu, Haotian

Publication type:

Article

DRV Evaluation of 6T SRAM Cell Using Efficient Optimization Techniques.

Published in:

Active & Passive Electronic Components, 2018, p. 1, doi. 10.1155/2018/3457284

By:

Joshi, Vinod Kumar;
Nayak, Chetana

Publication type:

Article

一种新型 SoC 启动方案的设计与实现.

Published in:

Telecommunication Engineering, 2020, v. 60, n. 12, p. 1491, doi. 10.3969/j.issn.1001-893x.2020.12.017

By:

黎摇霖;
宋树祥

Publication type:

Article

Main memory controller with multiple media technologies for big data workloads.

Published in:

Journal of Big Data, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40537-023-00761-0

By:

Avargues, Miguel A.;
Lurbe, Manel;
Petit, Salvador;
Gomez, Maria E.;
Yang, Rui;
Zhu, Xiaoping;
Wang, Guanhao;
Sahuquillo, Julio

Publication type:

Article

Low-Power 8T Memory Cell of Register File for 180 nm Technology.

Published in:

Radioelectronics & Communications Systems, 2023, v. 66, n. 12, p. 658, doi. 10.3103/S0735272723100059

By:

Grudanov, O. M.

Publication type:

Article

Design Technology Co-Optimization Strategy for Ge Fraction in SiGe Channel of SGOI FinFET.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 11, p. 1709, doi. 10.3390/nano13111709

By:

Li, Shixin;
Wu, Zhenhua

Publication type:

Article

Hyper-FET's Phase-Transition-Materials Design Guidelines for Ultra-Low Power Applications at 3 nm Technology Node.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 22, p. 4096, doi. 10.3390/nano12224096

By:

Jung, Hanggyo;
Chang, Jeesoo;
Yoo, Changhyun;
Oh, Jooyoung;
Choi, Sumin;
Song, Juyeong;
Jeon, Jongwook

Publication type:

Article

Optimization of Gate-All-Around Device to Achieve High Performance and Low Power with Low Substrate Leakage.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 4, p. 591, doi. 10.3390/nano12040591

By:

Yoo, Changhyun;
Chang, Jeesoo;
Park, Sugil;
Kim, Hyungyeong;
Jeon, Jongwook

Publication type:

Article

Fatigue-Healing Performance Analysis of Warm-Mix Rubber Asphalt Mastic Using the Simplified Viscoelastic Continuum Damage Theory.

Published in:

Coatings (2079-6412), 2024, v. 14, n. 7, p. 914, doi. 10.3390/coatings14070914

By:

Li, Ping;
Li, Xiao;
Yu, Shangjun;
Sun, Linhao;
Yue, Jinchao;
Li, Ruixia

Publication type:

Article

Variation tolerant and stability simulation of low power SRAM cell analysis using FGMOS.

Published in:

International Journal of Modeling, Simulation & Scientific Computing, 2021, v. 12, n. 4, p. N.PAG, doi. 10.1142/S179396232150029X

By:

Sharma, Neha;
Chandel, Rajeevan

Publication type:

Article

Design, Materials, Process, and Fabrication of Fan-Out Panel-Level Heterogeneous Integration.

Published in:

Journal of Microelectronic & Electronic Packaging, 2018, v. 15, n. 4, p. 141, doi. 10.4071/imaps.734552

By:

Cheng-Ta Ko;
Yang, Henry;
Lau, John;
Ming Li;
Margie Li;
Lin, Curry;
Lin, J. W.;
Chieh-Lin Chang;
Jhih-Yuan Pan;
Hsing-Hui Wu;
Yu-Hua Chen;
Chen, Tony;
Xu, Iris;
Lo, Penny;
Fan, Nelson;
Kuah, Eric;
Zhang Li;
Kim Hwee Tan;
Chia-Hung Lin;
Beica, Rozalia

Publication type:

Article

Towards Efficient Memory Architectures: Low-Power Noise-Immune RRAM.

Published in:

Energies (19961073), 2024, v. 17, n. 24, p. 6349, doi. 10.3390/en17246349

By:

Edward, Nermine M.;
Hamed, Sahar M.;
Anis, Wagdy R.;
Elaraby, Nahla

Publication type:

Article

An Analysis on the VSC-HVDC Contribution for the Static Voltage Stability Margin and Effective Short Circuit Ratio Enhancement in Hybrid Multi-Infeed HVDC Systems.

Published in:

Energies (19961073), 2023, v. 16, n. 1, p. 532, doi. 10.3390/en16010532

By:

Oliveira, Diego;
Leal, Gustavo C. Borges;
Herrera, Danilo;
Galván-Díez, Eduardo;
Carrasco, Juan M.;
Aredes, Mauricio

Publication type:

Article

Design and Performance Analysis of SRAM Cells.

Published in:

IUP Journal of Electrical & Electronics Engineering, 2021, v. 14, n. 1, p. 7

By:

Kumar, Gyanender;
Yadav, Sachin Kumar

Publication type:

Article

Design and Performance Analysis of 6T SRAM Cell in Different Technologies and Nodes.

Published in:

International Journal of Performability Engineering, 2021, v. 17, n. 2, p. 167, doi. 10.23940/ijpe.21.02.p1.167177

By:

Janniekode, Uma Maheshwar;
Somineni, Rajendra Prasad;
Naidu, C. D.

Publication type:

Article

Design of Register File for Negative Bias Temperature Instability.

Published in:

International Journal of Performability Engineering, 2019, n. 11, p. 3052, doi. 10.23940/ijpe.19.11.p25.30523060

By:

Yuanyuan Ma;
Bai Na;
Wei Tan;
Gelan Yang

Publication type:

Article

Treg cells in autoimmunity: from identification to Treg-based therapies.

Published in:

Seminars in Immunopathology, 2019, v. 41, n. 3, p. 301, doi. 10.1007/s00281-019-00741-8

By:

Göschl, Lisa;
Scheinecker, Clemens;
Bonelli, Michael

Publication type:

Article

Numerical Comparative Analysis of 10T-SRAM Cells with 6T, 7T, 8T, and 9T Using Vertical Nanowire Tunnel FETs.

Published in:

Semiconductors, 2025, v. 59, n. 5, p. 427, doi. 10.1134/S1063782625600299

By:

Das, Amit;
Bhardwaj, Anjana;
Gupta, Ashish;
Raj, Geetanjali

Publication type:

Article

Trusted Cameras on Mobile Devices Based on SRAM Physically Unclonable Functions †.

Published in:

Sensors (14248220), 2018, v. 18, n. 10, p. 3352, doi. 10.3390/s18103352

By:

Arjona, Rosario;
Prada-Delgado, Miguel A.;
Arcenegui, Javier;
Baturone, Iluminada

Publication type:

Article

Pitfall of the Strongest Cells in Static Random Access Memory Physical Unclonable Functions.

Published in:

Sensors (14248220), 2018, v. 18, n. 6, p. 1776, doi. 10.3390/s18061776

By:

Gong, Mingyang;
Liu, Hailong;
Min, Run;
Liu, Zhenglin

Publication type:

Article

Materials for Memristors.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202314512

By:

Lanza, Mario;
Tian, He

Publication type:

Article

Comparative Analysis of Open and Short Defects in Embedded SRAM Using Parasitic Extraction Method for Deep Submicron Technology.

Published in:

Wireless Personal Communications, 2023, v. 132, n. 3, p. 2123, doi. 10.1007/s11277-023-10704-w

By:

Maddela, Venkatesham;
Sinha, Sanjeet Kumar;
Parvathi, Muddapu;
Sharma, Vinay

Publication type:

Article

Design and Analysis of Low Power FinFET SRAM with Leakage Current Reduction Techniques.

Published in:

Wireless Personal Communications, 2023, v. 131, n. 2, p. 1167, doi. 10.1007/s11277-023-10475-4

By:

Chandra, K. Sarath;
Kishore, Kakarla Hari

Publication type:

Article

Low Power and Suppressed Noise 6T, 7T SRAM Cell Using 18 nm FinFET.

Published in:

Wireless Personal Communications, 2023, v. 130, n. 1, p. 103, doi. 10.1007/s11277-023-10277-8

By:

Santosh Kumar, T.;
Tripathi, Suman Lata

Publication type:

Article

Low-Power SRAM Cell and Array Structure in Aerospace Applications: Single-Event Upset Impact Analysis.

Published in:

Wireless Personal Communications, 2023, v. 129, n. 1, p. 37, doi. 10.1007/s11277-022-10084-7

By:

Gavaskar, K.;
Sivaranjani, P.;
Elango, S.;
Nirmal Raja, G.

Publication type:

Article